A 0.13-μm SiGe BiCMOS LNA for 24-GHz automotive short-range radar

Abstract

In this paper a 24-GHz low-noise amplifier for automotive short-range radar applications is presented. The circuit was fabricated in a 0.13-μm SiGe BiCMOS process and includes three fully differential transformer-loaded cascode stages with variable gain functionality. The amplifier provides an outstanding power gain of 35 dB and a noise figure as low as 3.4 dB, exhibiting a reverse isolation better than -60 dB. The circuit guarantees an input 1-dB compression point of -12 dBm, while drawing 56 mA from a 2.4-V supply.