Defense, Security, and Sensing最新文献_第4页

Application of mosaic pixel microbolometer technology to very high-performance, low-cost thermography and pedestrian detection 马赛克像素微辐射热计技术在高性能、低成本热成像和行人检测中的应用

Defense, Security, and Sensing Pub Date : 2013-06-18 DOI: 10.1117/12.2018593

K. Liddiard

引用次数: 7

High-resistivity and high-TCR vanadium oxide thin films for infrared imaging prepared by bias target ion-beam deposition 偏置靶离子束沉积制备红外成像用高电阻率、高tcr氧化钒薄膜

Defense, Security, and Sensing Pub Date : 2013-06-18 DOI: 10.1117/12.2016277

Yao O. Jin, Hitesh A. Basantani, Adem Ozcelik, Tom Jackson, M. Horn

{"title":"High-resistivity and high-TCR vanadium oxide thin films for infrared imaging prepared by bias target ion-beam deposition","authors":"Yao O. Jin, Hitesh A. Basantani, Adem Ozcelik, Tom Jackson, M. Horn","doi":"10.1117/12.2016277","DOIUrl":"https://doi.org/10.1117/12.2016277","url":null,"abstract":"Vanadium oxide (VOx) thin films have been intensively studied as an imaging material for uncooled microbolometers due to their low resistivity, high temperature coefficient of resistivity (TCR), and low 1/f noise. Our group has studied pulsed DC reactive sputtered VOx thin films while reactive ion beam sputtering has been exclusively used to fabricate the VOx thin films for commercial thermal imaging cameras. The typical resistivity of imaging-grade VOx thin films is in the range of 0.1 to 10 ohm-cm with a TCR from -2%/K to -3%/K. In this work, we report for the first time the use of a new biased target ion beam deposition tool to prepare vanadium oxide thin films. In this BTIBD system, ions with energy lower than 25ev are generated remotely and vanadium targets are negatively biased independently for sputtering. High TCR (<-4.5%/K) VOx thin films have been reproducibly prepared in the resistivity range of 103-104 ohm-cm by controlling the oxygen partial pressure using real-time control with a residual gas analyzer. These high resistivity films may be useful in next generation uncooled focal plane arrays for through film rather than lateral thermal resistors. This will improve the sensitivity through the higher TCR without increasing noise accompanied by higher resistance. We report on the processing parameters necessary to produce these films as well as details on how this novel deposition tool operates. We also report on controlled addition of alloy materials and their effects on VOx thin films’ electrical properties.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122253641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 15

Room temperature SWIR sensing from colloidal quantum dot photodiode arrays 胶体量子点光电二极管阵列室温SWIR传感

Defense, Security, and Sensing Pub Date : 2013-06-18 DOI: 10.1117/12.2019521

E. Klem, Jay S. Lewis, C. Gregory, Garry B. Cunningham, D. Temple, A. D'Souza, E. Robinson, P. Wijewarnasuriya, N. Dhar

引用次数: 6

A fully digital readout employing extended counting method to achieve very low quantization noise 采用扩展计数方法的全数字读出器，实现极低的量化噪声

Defense, Security, and Sensing Pub Date : 2013-06-18 DOI: 10.1117/12.2018518

Huseyin Kayahan, Ömer Ceylan, M. Yazici, Y. Gurbuz

引用次数: 5

Room-temperature micro-photonic bolometer based on dielectric optical resonators 基于介电光学谐振腔的室温微光子测热计

Defense, Security, and Sensing Pub Date : 2013-06-18 DOI: 10.1117/12.2016303

T. Ioppolo, E. Rubino

引用次数: 5

Surface states characterization and simulation of Type-II In(Ga)Sb quantum dot structures for processing optimization of LWIR detectors 用于LWIR探测器工艺优化的ii型In(Ga)Sb量子点结构表面态表征与模拟

Defense, Security, and Sensing Pub Date : 2013-06-18 DOI: 10.1117/12.2015966

Qin Wang, M. Rajabi, A. Karim, S. Almqvist, M. Bakowski, S. Savage, J. Andersson, M. Göthelid, Shun Yu, O. Gustafsson, M. Hammar, C. Asplund

{"title":"Surface states characterization and simulation of Type-II In(Ga)Sb quantum dot structures for processing optimization of LWIR detectors","authors":"Qin Wang, M. Rajabi, A. Karim, S. Almqvist, M. Bakowski, S. Savage, J. Andersson, M. Göthelid, Shun Yu, O. Gustafsson, M. Hammar, C. Asplund","doi":"10.1117/12.2015966","DOIUrl":"https://doi.org/10.1117/12.2015966","url":null,"abstract":"Quantum structures base on type-II In(Ga)Sb quantum dots (QDs) embedded in an InAs matrix were used as active material for achieving long-wavelength infrared (LWIR) photodetectors in this work. Both InAs and In(Ga)Sb are narrow band semiconductor materials and known to possess a large number of surface states, which apparently play significant impact for the detector’s electrical and optical performance. These surface states are caused not only by material or device processing induced defects but also by surface dangling bonds, oxides, roughness and contaminants. To experimentally analyze the surface states of the QD structures treated by different device fabrication steps, atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) measurements were performed. The results were used to optimize the fabrication process of the LWIR photodetectors in our ongoing project. The dark current and its temperature dependence of the fabricated IR photodetectors were characterized in temperature range 10 K to 300 K, and the experiment results were analyzed by a theoretic modeling obtained using simulation tool MEDICI.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"8704 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130428779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IR and visible images registration method based on cross cumulative residual entropy 基于交叉累积残差熵的红外与可见光图像配准方法

Defense, Security, and Sensing Pub Date : 2013-06-18 DOI: 10.1117/12.2014267

Chaowei Li, Qian Chen, G. Gu, Tian Man

引用次数: 1

Dewar-cooler-integrated high sensitivity MWIR wave front sensor 集成杜瓦-冷却器的高灵敏度MWIR波前传感器

Defense, Security, and Sensing Pub Date : 2013-06-18 DOI: 10.1117/12.2015905

S. Velghe, S. Magli, G. Aubry, N. Guerineau, S. Rommeluère, J. Jaeck, B. Wattellier

{"title":"Dewar-cooler-integrated high sensitivity MWIR wave front sensor","authors":"S. Velghe, S. Magli, G. Aubry, N. Guerineau, S. Rommeluère, J. Jaeck, B. Wattellier","doi":"10.1117/12.2015905","DOIUrl":"https://doi.org/10.1117/12.2015905","url":null,"abstract":"Recent developments in the Mid Wave InfraRed (MWIR) optical domain were made on materials, optical design and manufacturing. They answer increasing demands for more compact, less temperature dependent optical systems with increased optical performances and complexity (multi- or hyper- spectral imagery). At the same time, the characterization of these components has become strategic and requires solutions with higher performance. The optical quality of such devices is measured by wave front sensing techniques. PHASICS previously developed wave front sensors based on Quadri-Wave Lateral Shearing Interferometry (QWLSI) using broadband microbolometers cameras for infrared measurements. However they suffer from reduced light sensitivity in the MWIR domain, which limits their use with broadband sources such as black bodies. To meet metrology demands, we developed an innovative wave front sensor. This instrument combines the metrological qualities of QWLSI with the radiometric performances of a last generation detection block (Infrared Detector Dewar Cooler Assembly, IDDCA) with a quantum infrared focal plane array (IRFPA) of HgCdTe technology. The key component of QWLSI is a specific diffractive grating placed a few millimeters from the focal plane array. This requirement implies that this optics should be integrated inside the IDDCA. To achieve this, we take advantage of the experience acquired from recent developments with optics integrated in IDDCA. Thanks to this approach, we developed a high spatial resolution MWIR wave front sensor (160x128 points) with a high sensitivity for accurate measurements under low-flux conditions. This paper will present the instrument technological solutions, the development key steps and experimental results on various metrology applications.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129817743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Precise opto-mechanical characterization of assembled infrared optics 组装红外光学元件的精确光力学特性

Defense, Security, and Sensing Pub Date : 2013-06-18 DOI: 10.1117/12.2015679

D. Winters, P. Langehanenberg, J. Heinisch, E. Dumitrescu

{"title":"Precise opto-mechanical characterization of assembled infrared optics","authors":"D. Winters, P. Langehanenberg, J. Heinisch, E. Dumitrescu","doi":"10.1117/12.2015679","DOIUrl":"https://doi.org/10.1117/12.2015679","url":null,"abstract":"The imaging quality of assembled optical systems is strongly influenced by the alignment errors of the individual lenses in the assembly. Although instrumentation for characterizing centering errors for the visual spectral range existed for some time, the technology to include the LWIR (8-12µm) and the MWIR (3-5µm) spectral ranges was only recently developed. Here, we report on the development and performance of such a measurement system that is capable of fully characterizing the alignment of all individual elements of an IR lens assembly in a non-contact and non-destructive fashion. The main component of the new instrument is an autocollimator working in the LWIR that determines the position of the center of curvature of each individual IR lens surface with respect to the instruments reference axis. This position data are used to calculate the shift and tilt of the individual lenses with respect to each other or a user-defined reference axis like e.g. the assembly housing. Finally, to complete the whole picture, the thicknesses and air gaps between individual lenses are measured with a low coherence interferometer built into the instrument. In order to obtain precise data, the instrument software takes the measured real centering error into account and directs the user to optimally align the assembly with respect of the interferometer reference axis, which then determines the position of the vertex positions along the optical axis and from these the center thicknesses of each lens and the air gaps between lenses with an accuracy below one micrometer.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125055762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

High-resistant multispectral optical coatings for infrared applications 用于红外应用的高耐多光谱光学涂层

Defense, Security, and Sensing Pub Date : 2013-06-18 DOI: 10.1117/12.2014376

M. Degel, E. Gittler, T. Wagner, M. Serwazi, P. Maushake

引用次数: 1