2007 IEEE Workshop on Microelectronics and Electron Devices最新文献

{"title":"Poster Presentation 6: Logic Circuits Operating in Both Sub- and Above-Threshold Voltages","authors":"J. Nyathi, B. Bero","doi":"10.1109/WMED.2007.368067","DOIUrl":"https://doi.org/10.1109/WMED.2007.368067","url":null,"abstract":"Interest in VLSI subthreshold design has recently increased due to the emergence of systems that require ultra-low power operation. Furthermore the ever increasing leakage currents, now used to drive logic make subthreshold design an interesting prospect. Subthreshold sacrifices speed for power creating a clear divide between designing for high speed and ultra-low power. It might be beneficial to allow circuits designed for subthreshold operation to become operable at above threshold voltages (super-threshold), depending on processing needs. In this study among other things; the feasibility of optimizing device sizes for both subthreshold and above threshold operations is considered. Three widely publicized body biasing techniques are examined and compared to a newly proposed tunable body biasing scheme. The comparison is in terms of power and energy dissipation as well as speed. A number of logic styles are simulated to draw conclusions on what logic style in conjunction with what body biasing scheme offer improved performance.","PeriodicalId":337793,"journal":{"name":"2007 IEEE Workshop on Microelectronics and Electron Devices","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129606440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Minimizing the Output Voltage Ripple of a DC/DC Power Converter by Phase Locking","authors":"P. Upadhyaya, H. Hess","doi":"10.1109/WMED.2007.368052","DOIUrl":"https://doi.org/10.1109/WMED.2007.368052","url":null,"abstract":"Reduced passives size and improved quality factor (Q) for an on-chip inductor can be achieved in a fully integrated DC/DC power converter by high frequency switching. This paper presents a high speed closed-loop buck converter that uses phase locking control system to reduce output voltage ripple. A closed-loop DC/DC power converter has been designed in a TSMC-0.25¿m technology. The power converter takes a 3.3 V DC input and switches at 1.02 GHz to produce output voltage of 1.5 V and 1.8 V DC and stabilizes in less than 600 ns. Design equations and simulation results are presented.","PeriodicalId":337793,"journal":{"name":"2007 IEEE Workshop on Microelectronics and Electron Devices","volume":"313 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127481864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"1/f Noise and RTS(Random Telegraph Signal) Errors in Sense Amplifiers","authors":"D. Miller, P. Poocharoen, L. Forbes","doi":"10.1109/WMED.2007.368839","DOIUrl":"https://doi.org/10.1109/WMED.2007.368839","url":null,"abstract":"The modeling of noise in the frequency domain gives the mean square noise current of a transistor as a function of frequency. RTS in nanoscale devices is easiest modeled as an instantaneous fluctuation in threshold voltage due to the capture and emission of traps. The capture and emission of a single electron at an interface or oxide trap in a nanoscale NMOS transistor is equivalent to a discrete change in threshold voltage. There is a small-finite probability of a large threshold voltage change due the collective capture or emission of multiple active traps. Even in wide devices this noise can contribute a mismatch in sense amplifiers in CMOS integrated circuits which can lead to errors.","PeriodicalId":337793,"journal":{"name":"2007 IEEE Workshop on Microelectronics and Electron Devices","volume":"30 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129938926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Subthreshold Leakage Due to 1/F Noise and Rts(Random Telegraph Signals)","authors":"D. Miller, P. Poocharoen, L. Forbes","doi":"10.1109/WMED.2007.368840","DOIUrl":"https://doi.org/10.1109/WMED.2007.368840","url":null,"abstract":"An analysis of subthreshold leakage predicts a Gaussian or Normal distribution on large devices but a distorted distribution is possible on small devices. 1/f noise due to RTS signals on large well behaved devices will have a Gaussian distribution and cause a Gaussian current distribution under normal and subthreshold operating conditions. Localized channels or percolation channels can cause a distortion of this distribution and large subthreshold leakage current pulses which are most obvious in small devices.","PeriodicalId":337793,"journal":{"name":"2007 IEEE Workshop on Microelectronics and Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130366804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Silicon-on-Insulator Transistor Resistant to Substrate Potential","authors":"A. Oblea, R. Hayhurst, D. Wilson, D. Hackler","doi":"10.1109/WMED.2007.368049","DOIUrl":"https://doi.org/10.1109/WMED.2007.368049","url":null,"abstract":"A silicon-on-insulator transistor that is resistant to substrate potential is demonstrated. The 0.18 ¿m independently double-gated Flexfet transistor with implanted JFET bottom gate shows little change in either threshold voltage or leakage current across a wide range of substrate potentials. Threshold voltage shifts (¿Vt) and changes in leakage current for both nMOS and pMOS transistors are analyzed for substrate biases ranging from -20 V to + 20 V. Results show no more than 20 mV and 10 mV ¿Vt for the nMOS and pMOS transistors, respectively, and leakage currents that change less than 12 pA. The Flexfet transistors are therefore ideally suited for applications that require large potentials in the SOI substrates, such as CMOS SOI pixel detectors.","PeriodicalId":337793,"journal":{"name":"2007 IEEE Workshop on Microelectronics and Electron Devices","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116799849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metal Gate Recessed Access Device (RAD) for DRAM Scaling","authors":"N. Ramaswamy, V. Ananthan, D. Hwang, R. Iyer, C. Mouli, A. Mcteer, Sanh D. Tang, K. Parekh, T. Owens, Young Pil Kim, N. Palaniappan, Jian Li, S. Groothuis, G. Haller, Shixin Wang","doi":"10.1109/WMED.2007.368056","DOIUrl":"https://doi.org/10.1109/WMED.2007.368056","url":null,"abstract":"A functional DRAM with higher data retention characteristics than a planar access device has been demonstrated, using a metal gate recessed access device (RAD). Chemical vapor deposition (CVD) and atomic layer deposition (ALD) were used to deposit titanium nitride (TiN) and tantalum nitride (TaN), respectively. CVD TiN and ALD TaN-CVD TiN laminate gate stacks were integrated with a RAD module. ALD TaN-CVD TiN laminate gates showed enhanced drive current (IDS), higher transconductance (GM), higher mobility (¿EFF) and reduced off current (IOFF) characteristics compared to CVD TiN gates. Device characteristics and reliability data for both the planar devices and RADs are presented. The ALD TaN-CVD TiN laminate metal gate RAD showed much improved data retention characteristics compared to a conventional planar device with a poly silicon gate. The optimum thickness of ALD TaN in the laminate stack is discussed.","PeriodicalId":337793,"journal":{"name":"2007 IEEE Workshop on Microelectronics and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131206551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A High Sensitivity MEMS Pressure Sensor","authors":"J. Law, A. Mian","doi":"10.1109/WMED.2007.368060","DOIUrl":"https://doi.org/10.1109/WMED.2007.368060","url":null,"abstract":"The piezoresistive effect in a van der Pauw (VDP) stress sensor subjected to biaxial stress was considered. The VDP resistance equations were combined with the silicon piezoresistivity equations to yield relations for the change in resistance of a VDP sensor in terms of the applied state of stress. Then the sensitivity of the VDP sensor to biaxial stress was determined analytically and simulated numerically. The biaxial stress states considered were those for a circular diaphragm under pressure. The VDP sensitivities to biaxial stress were compared to the sensitivity for the conventional piezoresistive stress sensor. It is observed that the theoretical (based on analytical and numerical results) pressure sensitivity of the new VDP sensor is about three times greater than the conventional counterpart.","PeriodicalId":337793,"journal":{"name":"2007 IEEE Workshop on Microelectronics and Electron Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126362694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the Nature of Self-Assembled Collagen Fibrils as Biomolecular Nanowires for Sensor Applications","authors":"D. Araujo, P. Price, J. Brotherton, K. Coonse, R. Southwick, A. Moll, J. Oxford, W. B. Knowlton","doi":"10.1109/WMED.2007.368059","DOIUrl":"https://doi.org/10.1109/WMED.2007.368059","url":null,"abstract":"The self assembly mechanism of collagen monomers into nanoscale fibrils provides the opportunity to investigate their possible use as biological nanowires. Electrical test structures were fabricated using electron beam lithography (EBL), and used to electrically contact the collagen fibrils and characterize their electrical behavior.","PeriodicalId":337793,"journal":{"name":"2007 IEEE Workshop on Microelectronics and Electron Devices","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115159929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic Induction IC for Wireless Communication in RF-Impenetrable Media","authors":"N. Jack, K. Shenai","doi":"10.1109/WMED.2007.368058","DOIUrl":"https://doi.org/10.1109/WMED.2007.368058","url":null,"abstract":"Demands on fresh water and energy are ever increasing. An coil, from which the data is extracted. The communication underground network of low cost, low power soil properties range for magneto-inductive systems is short. Therefore, one sensors gathering valuable information such as soil salinity, sensor may transmit its data to a nearby sensor, which in turn nitrogen levels, and volumetric water content over a large transmits this received data, along with additional data, to a region would allow for precise and efficient automated soil sensor near to it but unreachable by the first sensor. The and water management. Using current technology, sensors network data is relayed in a multi-hop fashion until it reaches a are buried at a desired depth and relay soil information to the desired destination for further processing. surface by means of a physical link such as a cable, antenna, or the protruding embodiment of the probe itself. This physical Unlike RF, MI transmission will not be affected by soil type, link to the surface is easily damaged by agricultural composition, compaction, or moisture content, and will require equipment, which prevents or inhibits sensor deployment in less power and lower operating frequencies than RF the middle of a field. This physical surface link is also transmission. This novel technology will enable the unsightly and obtrusive, making use of these sensors in athletic large-scale deployment of underground wireless soil sensor fields or home lawns undesirable. In order to create an networks. This technology may also be used in medical, underground network of sensors, they must be connected military, underwater, or other RF-impenetrable environments, together via multiple cables, or wirelessly on the surface via where large scale sensor deployment would be advantageous. expensive RF transmitters. A prototype of a MI transmitter has been constructed using The authors are developing a novel method for underground commercially available parts. A receiver is currently under communication in wireless sensor networks using magnetic construction. The red line in Figure 1 shows the predicted induction (MI). Each soil properties sensor in the network voltage induced on a receiving coil according to prototype will be equipped with a MI transmitter, using a small parameters. The blue line shows the induced voltage ferromagnetic coil or an embedded RFID-type coil as an measured across a stand alone receiving coil (no amplification antenna. The soil information, superimposed upon a carrier or demodulation circuitry attached) due to the field established frequency, excites the coil, establishing a quasi-static by the prototype transmitter. The authors will integrate this electromagnetic field. This field induces a voltage in a technology into a low power, low cost, single chip solution to nearby MI receiver, similarly equipped with a ferromagnetic be interfaced with soil or other sensors.","PeriodicalId":337793,"journal":{"name":"2007 IEEE Workshop on Microelectronics and Electron Devices","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134598735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Poster Presentation 2 : Phase Change Memory Devices with Stacked Ge-Chalcogenide/Sn-Chalcogenide Films","authors":"C. M. Anderson, K. Campbell","doi":"10.1109/WMED.2007.368063","DOIUrl":"https://doi.org/10.1109/WMED.2007.368063","url":null,"abstract":"With the number of applications of electronic memory continuing to grow there is an increasing demand for smaller and faster memory products. With the scaling limit ofDRAM approaching and the high power requirements, limited endurance, and radiation sensitivity of Flash there exists the need for a new memory technology. One of the most promising candidates to fulfill this need is based on phase-change materials [1]. Phase-change RAM (PCRAM) does not have the scalability issues of DRAM, consumes less power and has a higher cycle lifetime than Flash, and is radiation resistant [2].","PeriodicalId":337793,"journal":{"name":"2007 IEEE Workshop on Microelectronics and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115619205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}