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Strongly directional emission from AlGaAs/GaAs light emitting diodes AlGaAs/GaAs发光二极管的强定向发射
ESSDERC '90: 20th European Solid State Device Research Conference Pub Date : 1990-11-26 DOI: 10.1063/1.103883
A. Kock, E. Gornik, M. Hauser, W. Beinstingl
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引用次数: 72
Technology and design of SIPOS films used as field plates for high voltage planar devices SIPOS薄膜作为高压平面器件场极板的工艺与设计
ESSDERC '90: 20th European Solid State Device Research Conference Pub Date : 1990-11-01 DOI: 10.1117/12.26298
D. Jaume, G. Charitat, A. Peyre-Lavigne, P. Rossel
{"title":"Technology and design of SIPOS films used as field plates for high voltage planar devices","authors":"D. Jaume, G. Charitat, A. Peyre-Lavigne, P. Rossel","doi":"10.1117/12.26298","DOIUrl":"https://doi.org/10.1117/12.26298","url":null,"abstract":"In order to improve the voltage handling capability of high voltage and power devices, an efficient technique based on the deposition of a semi-resistive layer acting as a field plate is proposed. The complete design of a high voltage planar transistor (1500V) using a SIPOS layer on SiO2 film is extracted from bidimensional numerical simulations. The evolution of breakdown voltage BVcbo versus critical parameters as oxide thickness, field plate length and field plate-stop channel distance is calculated. A good agreement between theoretical and experimental results is obtained. The breakdown voltage achieved by the devices is near 90% of the ideal planar breakdown voltage without any damage for other electrical parameters.","PeriodicalId":334101,"journal":{"name":"ESSDERC '90: 20th European Solid State Device Research Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127130564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analytical model for circuit simulation with quarter micron MOSFETs: subthreshold characteristics 四分之一微米mosfet电路仿真的解析模型:亚阈值特性
ESSDERC '90: 20th European Solid State Device Research Conference Pub Date : 1990-09-01 DOI: 10.7567/SSDM.1990.C-5-1
M. Miura-Mattausch, H. Jacobs
{"title":"Analytical model for circuit simulation with quarter micron MOSFETs: subthreshold characteristics","authors":"M. Miura-Mattausch, H. Jacobs","doi":"10.7567/SSDM.1990.C-5-1","DOIUrl":"https://doi.org/10.7567/SSDM.1990.C-5-1","url":null,"abstract":"We show a new simple model which includes the gradient of the lateral electric field analytically. The model describes the subthreshold characteristics relating to short-channel effects correctly down to 0.1 μm. effective channel length L<inf>eff</inf> with physical parameters (N<inf>sub</inf>, C<inf>ox</inf>, V<inf>fb</inf>, ø<inf>f</inf>)taken from the long-channel device.","PeriodicalId":334101,"journal":{"name":"ESSDERC '90: 20th European Solid State Device Research Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114351922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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