四分之一微米mosfet电路仿真的解析模型:亚阈值特性

ESSDERC '90: 20th European Solid State Device Research Conference Pub Date : 1990-09-01 DOI:10.7567/SSDM.1990.C-5-1

M. Miura-Mattausch, H. Jacobs

{"title":"四分之一微米mosfet电路仿真的解析模型:亚阈值特性","authors":"M. Miura-Mattausch, H. Jacobs","doi":"10.7567/SSDM.1990.C-5-1","DOIUrl":null,"url":null,"abstract":"We show a new simple model which includes the gradient of the lateral electric field analytically. The model describes the subthreshold characteristics relating to short-channel effects correctly down to 0.1 μm. effective channel length L<inf>eff</inf> with physical parameters (N<inf>sub</inf>, C<inf>ox</inf>, V<inf>fb</inf>, ø<inf>f</inf>)taken from the long-channel device.","PeriodicalId":334101,"journal":{"name":"ESSDERC '90: 20th European Solid State Device Research Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Analytical model for circuit simulation with quarter micron MOSFETs: subthreshold characteristics\",\"authors\":\"M. Miura-Mattausch, H. Jacobs\",\"doi\":\"10.7567/SSDM.1990.C-5-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We show a new simple model which includes the gradient of the lateral electric field analytically. The model describes the subthreshold characteristics relating to short-channel effects correctly down to 0.1 μm. effective channel length L<inf>eff</inf> with physical parameters (N<inf>sub</inf>, C<inf>ox</inf>, V<inf>fb</inf>, ø<inf>f</inf>)taken from the long-channel device.\",\"PeriodicalId\":334101,\"journal\":{\"name\":\"ESSDERC '90: 20th European Solid State Device Research Conference\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC '90: 20th European Solid State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.7567/SSDM.1990.C-5-1\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '90: 20th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/SSDM.1990.C-5-1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们给出了一个新的简单模型，其中包含了横向电场的梯度。该模型准确地描述了低至0.1 μm的短通道效应的亚阈值特性。有效信道长度Leff，物理参数(Nsub, Cox, Vfb， øf)取自长信道设备。

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Analytical model for circuit simulation with quarter micron MOSFETs: subthreshold characteristics

We show a new simple model which includes the gradient of the lateral electric field analytically. The model describes the subthreshold characteristics relating to short-channel effects correctly down to 0.1 μm. effective channel length Leff with physical parameters (Nsub, Cox, Vfb, øf)taken from the long-channel device.

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ESSDERC '90: 20th European Solid State Device Research Conference

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