LEOS '92 Conference Proceedings最新文献

{"title":"Third-order Dispersion In Fiber Propagation And In Mode-locked Lasers With Fast Saturable Absorption","authors":"H. Haus, J. Moores, L. E. Nelson","doi":"10.1109/LEOS.1992.694051","DOIUrl":"https://doi.org/10.1109/LEOS.1992.694051","url":null,"abstract":"","PeriodicalId":331211,"journal":{"name":"LEOS '92 Conference Proceedings","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116053711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stabilization Of Passively Made-locked Semiconductor Laser Repetition Frequency","authors":"R. HeIkey, D. Derickson, A. Mar, J. Wasserbauer, J. Bowers, R. Thornton","doi":"10.1109/LEOS.1992.693896","DOIUrl":"https://doi.org/10.1109/LEOS.1992.693896","url":null,"abstract":"Passively mode-locked semiconductor diode lasers have demonstrated repetition frequencies up to 350 GHz [l]. However, most applications for optical pulses with a millimeterwave repetition frequency require that the repetition frequency be stable, and synchronized to a low frequency reference. This stabilization can be provided by hybrid mode-locking, where current injection is used for gain modulation. However current injection is limited by the electrical parasitics of the contacts. We demonstrate for the first time feedback stabilization of passively mode-locked semiconductor diode lasers. This technique is useful for stcbillzing millimeter-wave repetition frequency mode-locked devices as it is not limited by the laser contact elecmcal parasitics. Electrical feedback has previously been used to stabilize a mode-locked dye laser and color center laser using a piezoelectric tuning element to adjust the cavity length [2]. This stabilization technique is unique in that the photodetection and frequency tuning functions are monolithically integrated into the laser structure. The experimental mode-locking configuration is shown in Figure 1. The active device was a 360 pm long GaAs/AlGaAs bulk active region laser fabricated using impurity induced disordering [3]. The laser was antireflection (AR) coated on one facet and coupled to a 5 GHz external cavity. A reversed biased 8 pm long absorber was used as a saturable absorber to produce passive mode-locking. The absorber was also used as a photodetector to generate an electrical output at the pulse repetition frequency. Feedback stabilization requires control of the repetition frequency by a DC signal. Previously we demonstrated repetition frequency tuning by current injection of a short segment [4]. The two parameters that can be used for repetition frequency tuning of a semiconductor laser are forward current for gain sections and reverse voltage for absorbing sections. The repetition frequency and power dependence on gain and absorber bias is shown in Figure 2. The repetition frequency can be tuned with very little power variation using the absorber voltage, which reduces AM noise to FM noise conversion in the stabilization process. In contrast, varying the gain segment current causes a much larger change in output power and a smaller repetition frequency tuning range. Several mechanisms can vary the pulse repetition frequency as a function of bias. One is carrier dependent changes in group velocity, which determines the pulse transit time through the laser. Another mechanism is a change in the gain or absorption saturation. Saturable gain and absorption changes cause a shift in the pulse center and therefore the effective cavity round trip time. The electrical network for feedback stabilization is shown in Figure 1. The short segment is used as a saturable absorber, photodetector, and a repetition frequency tuning element. The resulting phase noise shown in Figure 3 was measured using an external hig","PeriodicalId":331211,"journal":{"name":"LEOS '92 Conference Proceedings","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123242107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Manufacturable Integrated Optical Interconnect Networks For Electronic Systems","authors":"T. V. Van Eck, D. Girton, J. Valley, S. Ermer, G. F. Lipscomb, A. Ticknor, R. Lytel","doi":"10.1109/LEOS.1992.693864","DOIUrl":"https://doi.org/10.1109/LEOS.1992.693864","url":null,"abstract":"","PeriodicalId":331211,"journal":{"name":"LEOS '92 Conference Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123380453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability Assurance And Qualification of High-reliability Lasers And Laser Packages","authors":"B. Dean, F. Nash, T.F. Eltringhani, R. Ku","doi":"10.1109/LEOS.1992.693934","DOIUrl":"https://doi.org/10.1109/LEOS.1992.693934","url":null,"abstract":"","PeriodicalId":331211,"journal":{"name":"LEOS '92 Conference Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123579397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Broadly Tunable Visible Optical Parametric Oscillators","authors":"H. Komine","doi":"10.1109/LEOS.1992.694172","DOIUrl":"https://doi.org/10.1109/LEOS.1992.694172","url":null,"abstract":"A tuning range of 444 to 1768 nm has been obtained using a single set of mirrors and an anti-reflection coated, beta-barium borate crystal pumped by a pulsed, frequency-tripled, Nd:YAG laser.","PeriodicalId":331211,"journal":{"name":"LEOS '92 Conference Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123634785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Far Infrared Gas Lasers For Characterization Of Paper Products","authors":"P. Bernard","doi":"10.1109/LEOS.1992.694014","DOIUrl":"https://doi.org/10.1109/LEOS.1992.694014","url":null,"abstract":"","PeriodicalId":331211,"journal":{"name":"LEOS '92 Conference Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121647048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation Of Optical Nonlinearity And Dynamics Of Excitons In Semiconductors By Reflection-type Nonlinear Spectroscopy","authors":"M. Kuwata-Gonokami","doi":"10.1109/LEOS.1992.693880","DOIUrl":"https://doi.org/10.1109/LEOS.1992.693880","url":null,"abstract":"","PeriodicalId":331211,"journal":{"name":"LEOS '92 Conference Proceedings","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121951095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-speed Ingaas/gaas Multiple Quantum Well Electrooptical Modulator","authors":"G. Wingen, S. Zumkley, C. David, E. Larkins, J. Ralston, D. Jager","doi":"10.1109/LEOS.1992.694162","DOIUrl":"https://doi.org/10.1109/LEOS.1992.694162","url":null,"abstract":"","PeriodicalId":331211,"journal":{"name":"LEOS '92 Conference Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121952058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress in F/sub 2/ lasers and their applications","authors":"F. Kannari, M. Kakehata, M. Obara","doi":"10.1109/LEOS.1992.693853","DOIUrl":"https://doi.org/10.1109/LEOS.1992.693853","url":null,"abstract":"","PeriodicalId":331211,"journal":{"name":"LEOS '92 Conference Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122078994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Extreme Ultraviolet Free Electron Lasers","authors":"R. Sheffield","doi":"10.1109/LEOS.1992.693844","DOIUrl":"https://doi.org/10.1109/LEOS.1992.693844","url":null,"abstract":"","PeriodicalId":331211,"journal":{"name":"LEOS '92 Conference Proceedings","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121068794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}