Proceedings of 1994 IEEE GaAs IC Symposium最新文献_第7页

60-GHz HEMT-based MMIC receiver with on-chip LO 带有片上LO的60 ghz hemt MMIC接收器

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI: 10.1109/GAAS.1994.636932

T. Saito, N. Hidaka, Y. Ohashi, Y. Aoki

引用次数: 5

Double heterostructure InP HBT technology for high resolution A/D converters 高分辨率A/D转换器的双异质结构InP HBT技术

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI: 10.1109/GAAS.1994.636972

J. Jensen, A. Cosand, W. Stanchina, R. Walden, T. Lui, Y. Brown, M. Montes, K. Elliott, C. Kirkpatrick

引用次数: 7

High-speed AlGaAs/GaAs HBTs and their applications to 40-Gbit/s-class ICs 高速AlGaAs/GaAs hbt及其在40gbit /s级集成电路中的应用

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI: 10.1109/GAAS.1994.636963

Y. Matsuoka, E. Sano

引用次数: 10

Advanced III-V materials processing in the vacuum of space 先进的空间真空III-V材料加工

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI: 10.1109/GAAS.1994.636907

A. Ignatiev, C. Horton, M. Sterling, R. Sega, A. Bensaoula, A. Freundlich, S. Pei

{"title":"Advanced III-V materials processing in the vacuum of space","authors":"A. Ignatiev, C. Horton, M. Sterling, R. Sega, A. Bensaoula, A. Freundlich, S. Pei","doi":"10.1109/GAAS.1994.636907","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636907","url":null,"abstract":"GaAs films, both silicon doped and undoped, have been deposited by Molecular Beam Epitaxy (MBE) in Low Earth Orbit (LEO) in an ultra vacuum environment created by the Wake Shield Facility (WSF). The WSF is a 12 foot diameter stainless steel disk that sweeps out a volume of space thus creating an ultra vacuum in its wake. It was developed specifically to take advantage of the ultra vacuum for the deposition of thin film materials. The WSF was flown for the first time on STS-60 in February, 1994. The mission objectives were to measure the unique wake vacuum environment formed by the Wake Shield, and to epitaxially deposit GaAs thin films. In this paper we describe the films deposited and report on the characterization performed to date. Films were deposited in two basic structures. The first structure consisted of undoped GaAs films of thicknesses ranging from 2 to 4 /spl mu/m with a thin (/spl ap/200 mn) highly silicon doped layer (n/spl ap/5/spl times/10/sup 17//cc) on top. This is basically a metal-semiconductor field effect transistor (MESFET) structure. The second structure was a lightly silicon doped GaAs film (n/spl ap/5/spl times/10/sup 15//cc). We have obtained Photoluminescence (PL), Secondary Ion Mass Spectrometry (SIMS) and X-Ray diffraction data on selected films. The data indicate nominal quality single crystal films with oxygen and carbon contamination. The source of the contamination and further characterization are discussed.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117013153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

An equivalent circuit model for deep-trap induced drain-current transient behaviors in HJFETs hjfet中深阱诱导漏极电流瞬态行为的等效电路模型

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI: 10.1109/GAAS.1994.636982

K. Kunihiro, Y. Ohno

引用次数: 4

A high efficiency commercial GaAs MESFET power amplifier for PCM/CIA applications at 2.45 GHz 用于PCM/CIA应用的2.45 GHz高效率商用GaAs MESFET功率放大器

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI: 10.1109/GAAS.1994.636962

T. Quach, J. Staudinger

引用次数: 3

10 Gb/s monolithic optical modulator driver with high output voltage of 5 V using InGaP/GaAs HBTs 采用InGaP/GaAs HBTs的10gb /s单片光调制器驱动器，输出电压高达5 V

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI: 10.1109/GAAS.1994.636968

Y. Yamauchi, K. Nagata, T. Makimura, O. Nakajima, H. Ito, T. Ishibashi

引用次数: 10

A 40 GHz D-type flip-flop using AlGaAs/GaAs HBTs 采用AlGaAs/GaAs HBTs的40ghz d型触发器

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI: 10.1109/GAAS.1994.636964

Y. Kuriyama, T. Sugiyama, S. Hongo, J. Akagi, K. Tsuda, N. Iizuka, M. Obara

引用次数: 35

Sub-2.5 dB noise figure GaAs HBT direct-coupled LNAs for high volume commercial applications to 6 GHz 噪声系数低于2.5 dB的GaAs HBT直接耦合LNAs，适用于6 GHz的大批量商业应用

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI: 10.1109/GAAS.1994.636989

K. Kobayashi, A. Oki

引用次数: 11

GaAs multi-chip power amplifier module using a multi-layer TAB tape 采用多层TAB带的GaAs多芯片功率放大器模块

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI: 10.1109/GAAS.1994.636952

Y. Notani, Y. Nakajima, Y. Ohta, Y. Mitsui, M. Nakayama, S. Murakami, S. Orisaka, O. Ishihara, S. Mitsui

引用次数: 2