An equivalent circuit model for deep-trap induced drain-current transient behaviors in HJFETs

Abstract

A large-signal HJFET model is developed for deep-trap induced drain-current transient behaviors based on two-dimensional device simulations. In the model, electron capture and emission processes for deep traps are replaced by the currents flowing through a diode and a resistor, which are physically deduced from SRH statistics. The model accurately describes the bias and time dependent nonlinear-characteristics of trapping effects. The influence of the trapping effects on RF switching is also discussed.