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2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)最新文献

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NASA Goddard Space Flight Center's Compendium of Recent Single Event Effects Results 美国宇航局戈达德太空飞行中心最近的单事件效应结果汇编
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Pub Date : 2018-07-16 DOI: 10.1109/NSREC.2018.8584264
M. O’Bryan, K. Label, E. Wilcox, Dakai Chen, E. Wyrwas, M. Campola, M. Casey, J. Lauenstein, Alyson D. Topper, C. M. Szabo, J. Pellish, M. Berg, J. Lewellen, M. Holloway
{"title":"NASA Goddard Space Flight Center's Compendium of Recent Single Event Effects Results","authors":"M. O’Bryan, K. Label, E. Wilcox, Dakai Chen, E. Wyrwas, M. Campola, M. Casey, J. Lauenstein, Alyson D. Topper, C. M. Szabo, J. Pellish, M. Berg, J. Lewellen, M. Holloway","doi":"10.1109/NSREC.2018.8584264","DOIUrl":"https://doi.org/10.1109/NSREC.2018.8584264","url":null,"abstract":"We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.","PeriodicalId":323166,"journal":{"name":"2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132229756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Radiation Evaluation of the HVD233-SP CAN Transceiver HVD233-SP CAN收发器的辐射评估
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Pub Date : 2018-07-01 DOI: 10.1109/NSREC.2018.8584316
J. Cruz-Colon, V. Narayanan, W. Vonbergen, R. G. Roybal, R. Baumann
{"title":"Radiation Evaluation of the HVD233-SP CAN Transceiver","authors":"J. Cruz-Colon, V. Narayanan, W. Vonbergen, R. G. Roybal, R. Baumann","doi":"10.1109/NSREC.2018.8584316","DOIUrl":"https://doi.org/10.1109/NSREC.2018.8584316","url":null,"abstract":"Single Events Effect (SEE) characterization results for HVD233-SP CAN Transceiver is summarized. No SEL up to LET<inf>EFF</inf>=92MeV was observed, cross section plot with Weibull fit are presented for dynamic testing up to LET<inf>EFF</inf>=92MeV.","PeriodicalId":323166,"journal":{"name":"2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126643681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation Evaluation of the TMP461-SP Radiation Hardened Remote and Local Digital Temperature Sensor TMP461-SP辐射强化远程和本地数字温度传感器的辐射评估
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Pub Date : 2018-07-01 DOI: 10.1109/NSREC.2018.8584322
R. Gooty, V. Narayanan, J. Colon, K. Kruckmeyer, R. Viswanath
{"title":"Radiation Evaluation of the TMP461-SP Radiation Hardened Remote and Local Digital Temperature Sensor","authors":"R. Gooty, V. Narayanan, J. Colon, K. Kruckmeyer, R. Viswanath","doi":"10.1109/NSREC.2018.8584322","DOIUrl":"https://doi.org/10.1109/NSREC.2018.8584322","url":null,"abstract":"TMP461-SP is Radiation Hardened Remote Digital Temperature Sensor that is being released for Space applications. TMP461-SP has been characterized to pass Total dose level of up to 100KRrads. Single Event Heavy Ion testing showed that TMP461-SP was SEL-free up to LETeff = 76 MeV-cm2/mg, and has very low cross section for SET.","PeriodicalId":323166,"journal":{"name":"2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)","volume":"45 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126739370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
2018 Compendium of Radiation-Induced Effects for Candidate Particle Accelerator Electronics 2018候选粒子加速器电子学辐射诱导效应纲要
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Pub Date : 2018-07-01 DOI: 10.1109/nsrec.2018.8584266
S. Danzeca, G. Foucard, G. Tsiligiannis, R. Ferraro, G. Piscopo, C. McAllister, T. Borel, P. Peronnard, M. Brugger, A. Masi, S. Gilardoni
{"title":"2018 Compendium of Radiation-Induced Effects for Candidate Particle Accelerator Electronics","authors":"S. Danzeca, G. Foucard, G. Tsiligiannis, R. Ferraro, G. Piscopo, C. McAllister, T. Borel, P. Peronnard, M. Brugger, A. Masi, S. Gilardoni","doi":"10.1109/nsrec.2018.8584266","DOIUrl":"https://doi.org/10.1109/nsrec.2018.8584266","url":null,"abstract":"The sensitivity of a variety of components for particle accelerators electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital and mixed devices.","PeriodicalId":323166,"journal":{"name":"2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122764104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
State-of-the-Art Flash Chips for Dosimetry Applications 用于剂量学应用的最先进的闪存芯片
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Pub Date : 2018-07-01 DOI: 10.1109/NSREC.2018.8584286
P. Kumari, Levi Davies, N. Bhat, E. Zhang, M. Mccurdy, D. Fleetwood, B. Ray
{"title":"State-of-the-Art Flash Chips for Dosimetry Applications","authors":"P. Kumari, Levi Davies, N. Bhat, E. Zhang, M. Mccurdy, D. Fleetwood, B. Ray","doi":"10.1109/NSREC.2018.8584286","DOIUrl":"https://doi.org/10.1109/NSREC.2018.8584286","url":null,"abstract":"In this paper we show that state-of-the-art commercial off-the-shelf Flash memory chip technology (20 nm technology node with multi-level cells) is quite sensitive to ionizing radiation. We find that the fail-bit count in these Flash chips starts to increase monotonically with gamma or X-ray dose at 100 rad(SiO2). Significantly more fail bits are observed in X-ray irradiated devices, most likely due to dose enhancement effects due to high-Z back-end-of-line materials. These results show promise for dosimetry application.","PeriodicalId":323166,"journal":{"name":"2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)","volume":"251 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134064287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Single-Event Characterization of Xilinx UltraScale+® MPSOC under Standard and Ultra-High Energy Heavy-Ion Irradiation Xilinx UltraScale+®MPSOC在标准和超高能量重离子辐照下的单事件表征
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Pub Date : 2018-07-01 DOI: 10.1109/NSREC.2018.8584296
M. Glorieux, A. Evans, T. Lange, A-Duong In, D. Alexandrescu, C. Boatella-Polo, R. G. Alía, M. Tali, Carlos Urbina Ortega, M. Kastriotou, P. Fernandez-Martínez, V. Ferlet-Cavrois
{"title":"Single-Event Characterization of Xilinx UltraScale+® MPSOC under Standard and Ultra-High Energy Heavy-Ion Irradiation","authors":"M. Glorieux, A. Evans, T. Lange, A-Duong In, D. Alexandrescu, C. Boatella-Polo, R. G. Alía, M. Tali, Carlos Urbina Ortega, M. Kastriotou, P. Fernandez-Martínez, V. Ferlet-Cavrois","doi":"10.1109/NSREC.2018.8584296","DOIUrl":"https://doi.org/10.1109/NSREC.2018.8584296","url":null,"abstract":"Heavy-Ion irradiation of a Xilinx Ultrascale+ MPSOC was performed to measure Single-Event-Latch-up and Single-Event-Upset Cross-Sections. Additionally, irradiation with a ultra high energy xenon beam shows similar upset sensitivity.","PeriodicalId":323166,"journal":{"name":"2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)","volume":"2002 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134512391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Radiation Performance of a Flash NOR Device Flash NOR器件的辐射性能
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Pub Date : 2018-07-01 DOI: 10.1109/NSREC.2018.8584289
D. L. Hansen, R. Hillman, F. Meraz, J. Montoya, G. Williamson
{"title":"Radiation Performance of a Flash NOR Device","authors":"D. L. Hansen, R. Hillman, F. Meraz, J. Montoya, G. Williamson","doi":"10.1109/NSREC.2018.8584289","DOIUrl":"https://doi.org/10.1109/NSREC.2018.8584289","url":null,"abstract":"We present the results of single-event effects (SEE) and total ionizing-dose (TID) testing performed on the die used in DDC's 56F64008 flash-NOR devices. The device was single event latchup (SEL) immune at LET=85 MeV cm2/mg. All single event functional interrupts (SEFI) observed could be cleared by resetting the part without a need for power cycling.","PeriodicalId":323166,"journal":{"name":"2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)","volume":"630 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131774679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total Dose and Single-Event Effects Testing of the Intersil ISL70591SEH and ISL70592SEH Current Sources Intersil ISL70591SEH和ISL70592SEH电流源的总剂量和单事件效应试验
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Pub Date : 2018-07-01 DOI: 10.1109/NSREC.2018.8584301
W. H. Newman, N. V. van Vonno, B. Williams, A. Robinson, O. Mansilla, S. D. Turner, L. Pearce, E. Thomson
{"title":"Total Dose and Single-Event Effects Testing of the Intersil ISL70591SEH and ISL70592SEH Current Sources","authors":"W. H. Newman, N. V. van Vonno, B. Williams, A. Robinson, O. Mansilla, S. D. Turner, L. Pearce, E. Thomson","doi":"10.1109/NSREC.2018.8584301","DOIUrl":"https://doi.org/10.1109/NSREC.2018.8584301","url":null,"abstract":"We report the results of total ionizing dose (TID) and destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL7059xSEH, 100μA and 1mA precision current sources.","PeriodicalId":323166,"journal":{"name":"2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131171751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Compendium of Ball Aerospace Total Ionizing Dose Test Results Ball航空航天总电离剂量试验结果汇编
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Pub Date : 2018-07-01 DOI: 10.1109/nsrec.2018.8584269
Benjamin J. Griffiths, T. Oldham, Chad M. Whitney
{"title":"Compendium of Ball Aerospace Total Ionizing Dose Test Results","authors":"Benjamin J. Griffiths, T. Oldham, Chad M. Whitney","doi":"10.1109/nsrec.2018.8584269","DOIUrl":"https://doi.org/10.1109/nsrec.2018.8584269","url":null,"abstract":"We have conducted TID tests on a variety of parts intended for application in different Ball Aerospace space systems. Results and discussion are presented.","PeriodicalId":323166,"journal":{"name":"2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116863212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Heavy Ion Bit Response and Analysis of 256 Megabit Non-Volatile Spin-Torque-Transfer Magnetoresistive Random Access Memory (STT-MRAM) 256兆非易失性自旋转矩传输磁阻随机存取存储器(STT-MRAM)的重离子比特响应及分析
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) Pub Date : 2018-07-01 DOI: 10.1109/NSREC.2018.8584321
R. Katti, S. Guertin, J. Yang-Scharlotta, A. Daniel, R. Some
{"title":"Heavy Ion Bit Response and Analysis of 256 Megabit Non-Volatile Spin-Torque-Transfer Magnetoresistive Random Access Memory (STT-MRAM)","authors":"R. Katti, S. Guertin, J. Yang-Scharlotta, A. Daniel, R. Some","doi":"10.1109/NSREC.2018.8584321","DOIUrl":"https://doi.org/10.1109/NSREC.2018.8584321","url":null,"abstract":"Heavy-ion testing was performed recently on 256 Mb STT-MRAMs as a function of fluence and LET for Ne, Ar, Kr, and Au heavy ions. Zero hard-errors were observed in STT-MRAM (Spin-Torque-Transfer Magneto-resistive Random Access Memory) bits in this first-known heavy-ion testing of STT-MRAMs that are based on second-generation MRAM technology. Results from this STT-MRAM heavy-ion testing are compared to heavy-ion test results from Honeywell toggle-bit MRAMs that are based on first-generation MRAM technology. Based on this testing, the changes in the Magnetic Tunnel Junction (MTJ) between first-generation and second-generation MRAM technology were not observed to degrade heavy-ion characteristics; and heavy-ion performance potentially may have been improved.","PeriodicalId":323166,"journal":{"name":"2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124064132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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