{"title":"Simulation of algorithm for relief profile measurement and recognition of objects in on-board scanning pulsed laser rangefinders","authors":"V. Legkiy, Vladimir A. Shumeyko, I. Y. Balasov","doi":"10.1109/EDM.2010.5568661","DOIUrl":"https://doi.org/10.1109/EDM.2010.5568661","url":null,"abstract":"This paper proposes the algorithm and presents the preliminary results obtained from the simulation of three-dimensional images for scanning pulsed laser rangefinders with nanosecond probe pulses. The prospects for construction of high-speed on-board devices intended for recognition of ground (above-water) objects by geometric features are demonstrated.","PeriodicalId":320830,"journal":{"name":"2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115248082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Khmelev, A. N. Slivin, Andrey V. Lehr, A. D. Abramov
{"title":"Theoretical investigations of continuous ultrasonic seam welding of thermoplastic polymers and fabrics","authors":"V. Khmelev, A. N. Slivin, Andrey V. Lehr, A. D. Abramov","doi":"10.1109/EDM.2010.5568791","DOIUrl":"https://doi.org/10.1109/EDM.2010.5568791","url":null,"abstract":"The article presents results of theoretical investigations of formation of continuous joint in contact area of flat surface of the radiator with rotating surface of the pressure roller. The recommendation on the choice of pressure roller parameters and optimal amplitude of ultrasonic vibrations and broach speed for materials different in properties and thickness were developed on the basis of analysis of distribution, reflection and absorption of ultrasonic vibrations in connected materials in the contact zone.","PeriodicalId":320830,"journal":{"name":"2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115845951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. S. Khlebnikov, S. Kharitonov, D. Korobkov, A. V. Geist, P. Bachurin, D. Makarov
{"title":"Results of developing and examination of power generation system of alternating current","authors":"A. S. Khlebnikov, S. Kharitonov, D. Korobkov, A. V. Geist, P. Bachurin, D. Makarov","doi":"10.1109/EDM.2010.5568747","DOIUrl":"https://doi.org/10.1109/EDM.2010.5568747","url":null,"abstract":"The paper proposes some results of developing and examination of a power generation system of alternating current for autonomous unit. Experimental results of examination are presented in the paper.","PeriodicalId":320830,"journal":{"name":"2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126573011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Pedder, Jury M. Ovchinnikov, V. M. Svistushkin, E. V. Khrustaleva, A. V. Pedder, E. L. Poteryaeva, I. Nesina, J. V. Shkuro, Andrey I. Trifonov, Alexander P. Batyaikin, Elena V. Kulokova
{"title":"Medical and technical justification of the ozone-ultrasound method for treatment of patients with sensorineural deafness and tinnitus","authors":"V. Pedder, Jury M. Ovchinnikov, V. M. Svistushkin, E. V. Khrustaleva, A. V. Pedder, E. L. Poteryaeva, I. Nesina, J. V. Shkuro, Andrey I. Trifonov, Alexander P. Batyaikin, Elena V. Kulokova","doi":"10.1109/EDM.2010.5568806","DOIUrl":"https://doi.org/10.1109/EDM.2010.5568806","url":null,"abstract":"The effective method for treatment of patients with sensorineural deafness (SND) and tinnitus, which is based on low-frequency ultrasound and ozon-containing medical substances and realized by using series-produced units “Tonsillor” and “Ozotron”, has been justified, developed and implemented in the audiology practice. This method provides positive treatment dynamics to the most of patients with different SND degree and tinnitus and may be combined with the medical technology “Audioton”.","PeriodicalId":320830,"journal":{"name":"2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121567854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Platinum silicide as electrode material of microfabricated quantum electron tunneling transducers","authors":"N. Balan, E. N. Ivashov, Alexander B. Nevskii","doi":"10.1109/EDM.2010.5568840","DOIUrl":"https://doi.org/10.1109/EDM.2010.5568840","url":null,"abstract":"The platinum silicide is proposed as electrode material for electrostatically controlled MEMS/NEMS, in our case — for nanoelectromechanical sensors based on quantum electron tunneling. The process flow of device fabrication is presented and reasons to use platinum silicide as metallization material are described. In this paper we also demonstrate the use of conductive atomic force micoscopy (AFM) in spreading resistance imaging mode for inspection of topography and electrical properties of platinum silicide surface. The goal of this study is to define the platinum silicide films structural and electrical properties variation after thermal processing (conventional operation in CMOS process flow) and to correct the process flow parameters as may be required. Both AFM-inspection operations of pre- and post-thermal processed test structures are performed. The experimental results are presented.","PeriodicalId":320830,"journal":{"name":"2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116602680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"FEM simulation of piezoresistive pressure module","authors":"V. Gridchin, M. A. Chebanov","doi":"10.1109/EDM.2010.5568641","DOIUrl":"https://doi.org/10.1109/EDM.2010.5568641","url":null,"abstract":"The impact of singularity points on stress distribution in piezoresistive module is investigated by means of FEM simulation. The strong influence of singularities on stress distribution in silicon-glass interface is presented in this paper.","PeriodicalId":320830,"journal":{"name":"2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"342 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124311559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. S. Lyubin, A. Zinovieva, Anatoly V. Dvurechinskii
{"title":"Electron paramagnet resonance of electron states in two-dimensional quantum dot arrays","authors":"A. S. Lyubin, A. Zinovieva, Anatoly V. Dvurechinskii","doi":"10.1109/EDM.2010.5568689","DOIUrl":"https://doi.org/10.1109/EDM.2010.5568689","url":null,"abstract":"Electron paramagnetic resonance and spin echo methods are used to probe the spin dynamics in two-dimensional quantum dot (QD) arrays with different shape of nanoclusters. Two types of QD structures were investigated: 1) with single shaped QDs (hut-clusters having the ratio of height h to lateral size l, h/l = 0.1), and 2) with two groups of QDs, hut- and dome-clusters (h/l = 0.2). Both types of structures demonstrate the EPR signals from electrons localized in QD layers. The orientation dependence of EPR line width for first type structures is well described by the model of spin relaxation through precession in the effective magnetic field, arising during tunneling between QDs due to structure-inversion-asymmetry. In the experiments on structures with dome-clusters the additional peculiarity, which cannot be explained within the framework of precession model, is observed. The different orientation dependencies can be explained by different localization degree of electrons in the investigated structures. Spin echo measurements provide the longest spin decoherence time for structures with single shaped QDs.","PeriodicalId":320830,"journal":{"name":"2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124519934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electromagnetic mass accelerators","authors":"P. V. Kasyanenko, V. A. Efremov, S. Kharitonov","doi":"10.1109/EDM.2010.5568748","DOIUrl":"https://doi.org/10.1109/EDM.2010.5568748","url":null,"abstract":"The powerful power supplies system (up to 3 – 4 GW in impulse) was developed for the electromagnetic mass accelerator. Unique blocks of repeated switching rated on high currents (up to 1.2MA and voltage up to 5KV) are considered. In this paper various designs of the mass accelerator system and its power supplies are described.","PeriodicalId":320830,"journal":{"name":"2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130594396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Klimov, V. Kubarev, A. M. Palkin, N. S. Pashchin, V. Shumsky, V. S. Epov
{"title":"Kinetics of transient photocurrents in PbSnTe∶In films exposed to THz radiation","authors":"A. Klimov, V. Kubarev, A. M. Palkin, N. S. Pashchin, V. Shumsky, V. S. Epov","doi":"10.1109/EDM.2010.5568667","DOIUrl":"https://doi.org/10.1109/EDM.2010.5568667","url":null,"abstract":"The results of an experimental study of the kinetics of photocurrent rise in PbSnTe∶In films exposed at T=4.2 K to free-electron laser radiation of wavelengths 68, 123, and 205 µm are reported. The obtained data are analyzed within the model of space-charge-limited injection currents that flow in a material with electron traps.","PeriodicalId":320830,"journal":{"name":"2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126954437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Research of fractal thick-film elements frequency responses","authors":"P. A. Ushakov, Cyril O. Maksimov, A. Filippov","doi":"10.1109/EDM.2010.5568837","DOIUrl":"https://doi.org/10.1109/EDM.2010.5568837","url":null,"abstract":"The results of frequency responses measurements of two-terminal thick-film elements on the basis of RC-elements with distributed parameters with fractal impedance are presented. The given elements were synthesized for implementation of constant phase input impedance on level ϕv = 36.5° ± 2.5° (frequency scale v = 0.4 ± 0.03) over the 2.5-decade operating frequency range. The thick-film element construction and the used materials of layers are represented. The statistical estimation of input impedance phase-frequency response (PFR) parameters of the experimental samples is carried out. It is shown that measured PFR parameters well coincide with a synthesis preset PFR parameters, but have a narrower phase persistence frequency band. The reasons for difference of the experimental performance from the theoretical one are defined by circuit simulation. The tasks, solution to which will allow to create elements with the fractal impedance preset parameters of the fractional order integration and derivation devices, are set.","PeriodicalId":320830,"journal":{"name":"2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130045971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}