{"title":"Improvement of CuO Thin Film Properties for High Mobility p-Channel TFT Applications","authors":"Viswanath G. Akkili, R. Thangavel, V. Srivastava","doi":"10.1109/ISSE51996.2021.9467529","DOIUrl":"https://doi.org/10.1109/ISSE51996.2021.9467529","url":null,"abstract":"In this work, the analysis of structural, optical, and morphological properties of CuO thin films deposited by the spin coating method has been done at different annealing temperatures to improve the properties of the material. When the annealing temperature increases, a slight variation in the CuO lattice parameter values has been observed, and the crystallite size was reduced from 34 nm to 27 nm. On the other side, the tail state defects are generated proportionally to the temperature in the CuO bandgap energy levels, increasing the energy bandgap to 1.63 eV for 500°C annealed thin film. The thin film’s surface roughness decreases from 3.5 nm to 3.3 nm, and the grain’s size reduces. As a result, the carrier scattering at the grain boundaries decreases, which improves the carrier mobility. Consequently, the enhancement in CuO thin film properties with respect to the annealing temperature has been observed, which is useful in device applications.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124841183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of Added Phosphorus and Gallium in Lead-free Bismuth-Tin Alloys on Wetting and Intermetallic Compounds","authors":"I. Králová, Anna Kadlecová, P. Veselý, K. Dušek","doi":"10.1109/ISSE51996.2021.9467660","DOIUrl":"https://doi.org/10.1109/ISSE51996.2021.9467660","url":null,"abstract":"The aim of this work is to evaluate a wettability improvement and microstructure changes by addition of gallium and trace elements of phosphorus to novel low-temperature lead-free Bi-Sn solder alloys. Four different alloys Bi59Sn40Ga1, Bi57Sn40Ga3, Bi60Sn40 and the eutectic alloy Bi58Sn42 were chosen. Furthermore, all these solders were investigated with an added small amount of phosphorus as well. For the wettability comparison, the wetting balance test in combination with three different fluxes was used. Moreover, these alloys were soldered to a copper plated test board and aged in a climatic chamber at the temperature of 80 °C for 24 days. Subsequently, metallographic cross-sections were made and analyzed by scanning electron microscope (SEM) and energy dispersive X-ray analysis (EDX). The results of the wettability analysis showed the dominance of the chosen flux while soldering. However, it is still possible to draw the conclusion that phosphorus as an additive in Bi-Sn-Ga alloys supports the wetting, which is a crucial property of the solders. On the other hand, by the addition of gallium to the Bi60Sn40, the wetting force decreased. Regarding the microstructure, two different intermetallic compounds were identified. Namely, Cu6Sn5 at the interface between Cu board and alloys Bi60Sn40P and the eutectic one Bi58Sn42. The second detected IMC was CuGa2 between Cu and solder alloys with one and three weight percent of added gallium.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126609988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ag-based Thermal Interface Materials for GaN-on-Si Assembly Chips in Power Applications","authors":"R. Kisiel, P. Śpiewak, M. Kruszewski","doi":"10.1109/ISSE51996.2021.9467637","DOIUrl":"https://doi.org/10.1109/ISSE51996.2021.9467637","url":null,"abstract":"The paper aims to develop an assembly technique for the connection of bare Si or TiAu metallized Si chips to NiAu plated Cu surface. The thermal interface material (TIM) based on Ag paste was used for this purpose. It was found that Ag-based TIM allows creating sound joints between NiAu plated Cu and both types of Si chips. The analysis of the joints showed that the adhesion is in the range of 10 MPa and thermal resistance is less than 0.3 K/W. Therefore, the fabricated joints fulfil the mechanical and thermal requirements for this type of assemblies.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126934230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Karel Šíma, J. Štulík, Josef Slauf, T. Blecha, A. Hamácek
{"title":"Investigation of π Stacking Functionalization of Carbon Allotropes for RH Sensing","authors":"Karel Šíma, J. Štulík, Josef Slauf, T. Blecha, A. Hamácek","doi":"10.1109/ISSE51996.2021.9467585","DOIUrl":"https://doi.org/10.1109/ISSE51996.2021.9467585","url":null,"abstract":"This paper is focused on the noncovalent functionalization of CNT by π stacking of molecules for sensing of air relative humidity (RH). This type of functionalization is not used frequently, but it potentially offers a simple way to control the level of functionalization of the carbon allotropes. The base idea is to stack the molecules with base hexagonal carbon structure on the carbon allotropes like carbon nanotubes or graphene. This paper deals with experiments with different materials with carbon hexagonal structure, which can be able to do π stacking interaction and also can be able to react to air relative humidity.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122759800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Early-Stage Control of Oxygen Sensors for ICE Engines Using Digital Adaptive Filtering","authors":"Lucian Andrei Perișoară, Irina Bristena Bacîș","doi":"10.1109/ISSE51996.2021.9467513","DOIUrl":"https://doi.org/10.1109/ISSE51996.2021.9467513","url":null,"abstract":"For Internal Combustion Engines (ICE), the control of Air-to-Fuel Ratio (AFR) is done according to the voltage delivered by the oxygen (Lambda) sensor. After starting of engine, the Lambda sensor is cold and cannot generate a useful signal for the injection computer, so it works in open-loop, with an increased fuel consumption and higher levels of toxic exhaust gases. This paper proposes two ways to control AFR during cold starting, an analog circuit and a digital adaptive filtering circuit. In both methods, during the heating period of the Lambda sensor, a periodic signal adapted to the ICE operating regime can be generated to substitute the original Lambda sensor signal, thus the injection computer can be used in closed-loop more quickly, resulting a reduction of fuel consumption and pollution.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114259385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mudiyanselage Ruwan T. Perera, W. Werth, Timothy A. Polom
{"title":"Navigating Multi-Rate, Electrothermal Simulation Constraints","authors":"Mudiyanselage Ruwan T. Perera, W. Werth, Timothy A. Polom","doi":"10.1109/ISSE51996.2021.9467617","DOIUrl":"https://doi.org/10.1109/ISSE51996.2021.9467617","url":null,"abstract":"An automatic method is developed to vary thermal domain simulation time step based on an internal, simulation signal. The study addresses how thermal models can contain many states and, thus, require high computational effort for evaluation. In the context of coupled, electrothermal simulation, the proposed strategy manipulates the thermal domain time step as function of the rate of change of the electrical-to-thermal coupling signal. Throughout simulation investigations it is demonstrated how 90% reductions in computational effort are achievable with the method. Overall, the down-sampling control approach allows electrothermal coupled simulation accuracy and computational effort to be traded off according to specifications and computational hardware limits.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128438371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization of Thick Film Pastes for Aluminum Nitride Substrates","authors":"J. Hlina, J. Řeboun, A. Hamácek","doi":"10.1109/ISSE51996.2021.9467661","DOIUrl":"https://doi.org/10.1109/ISSE51996.2021.9467661","url":null,"abstract":"This paper is focused on the characterization of silver conductive thick film pastes determined for aluminum nitride (AlN) substrates. Aluminum nitride is a ceramic material with high thermal conductivity and a different structure compared to alumina (Al2O3). Therefore, pastes determined for AlN are based on a different adhesion mechanism than standard thick film pastes for alumina. Structural and mechanical parameters of conductive pastes for AlN substrates are described in this paper.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129906538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Illés, A. Skwarek, O. Krammer, Dániel Straubinger, Bence Lakó, G. Harsányi, K. Witek
{"title":"Soldering with SACX0307-(TiO2/ZnO) nano-composite solder alloys","authors":"B. Illés, A. Skwarek, O. Krammer, Dániel Straubinger, Bence Lakó, G. Harsányi, K. Witek","doi":"10.1109/ISSE51996.2021.9467652","DOIUrl":"https://doi.org/10.1109/ISSE51996.2021.9467652","url":null,"abstract":"In the present research, the solderability of SACX0307 nano-composite solder alloys was studied. The SACX0307 solder alloys were reinforced by ZnO or TiO2 nanoparticles. The nanoparticles were mixed into the solder paste in different volume fractions between 0.25 and 1 wt%, using the ball milling process. Wetting and mechanical tests were performed with the nano-composite solder alloys and with the reference SACX0307 as well. It was found that the ceramic reinforcements did not have a considerable effect on the wetting of the composite solder alloys. However, the shear strength of the nano-composite solder joints increased compared to the reference SACX0307. Generally, the application of TiO2 nanoparticles resulted in a bit better solderin properties than the ZnO nanoparticles. No straightforward correlation was found between the volume fraction of the ceramic nanoparticles and the soldering properties of the nano-composite solder alloys. Expect in the case of the ZnO nanoparticles, when the volume fraction should not exceed 0.5wt% since it can inhibit the proper reflow of the solder paste.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128158244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
O. Krammer, Tareq I. Al-Ma’aiteh, P. Martinek, A. Géczy
{"title":"Establishing a Machine-learning Based Framework for Optimising Electronics Assembly","authors":"O. Krammer, Tareq I. Al-Ma’aiteh, P. Martinek, A. Géczy","doi":"10.1109/ISSE51996.2021.9467543","DOIUrl":"https://doi.org/10.1109/ISSE51996.2021.9467543","url":null,"abstract":"By the spread of miniaturized components, like the 0201mm size-code (200 × 100 μm) passives, utilizing advanced optimization techniques becomes crucial in this field. A framework was established, which used machine-learning-based estimators to predict the yield of any manufacturing process in electronics technology. The framework includes using various methods, like artificial neural networks (ANN), decision trees and neuro-fuzzy inference systems. It can automatically split the input data into training and testing sets for each learning epoch to reach optimal performance and prevent possible overfitting at the same time. Besides, optimal structures and description functions are also determined automatically. To assess the prediction error, the framework calculates the MAE (Mean Absolute Error), the RMSE (Root Mean Square Error) and the MAPE (Mean Absolute Percentage Error) parameters to decide if the built estimator structure is appropriate. As an outcome, the framework can provide several parameters that the user can optionally select. Parameters like the predicted values of a process output parameter over different input process parameters are provided. Besides, KPI (Key Process Index) of the output parameters or the Desirability Function (which combines many output parameters) can be acquired. The applicability and the performance of the framework were analyzed on the stencil printing process by building an ANN structure.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132403600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High-ƙ Dielectrics for High-Speed Applications","authors":"Naveenbalaji Gowthaman, V. Srivastava","doi":"10.1109/ISSE51996.2021.9467619","DOIUrl":"https://doi.org/10.1109/ISSE51996.2021.9467619","url":null,"abstract":"Electronic properties of certain compound semiconductors make them most suitable for future CMOS in the nanometer regime. The most suitable compound of semiconductors has to be chosen for RF/high-speed applications. This work discusses the feasibility of the base material and also proposing a high-k dielectric material for the gate insulator. These types of high-k dielectric materials provide higher controllability over applied gate voltage. The simulation result verifies that the La2O3 layer oxide in the Double-Gate (DG) MOSFET provides higher controllability of the transistor at the subthreshold region. The measured values of doping density at 8 nm source/drain characteristic length with a peak channel doping concentration of 2×1018 cm−3 show that the n-type DG MOSFET is more submissive than the conventional MOSFET.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133653421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}