{"title":"电源应用中硅上氮化镓组装芯片的银基热界面材料","authors":"R. Kisiel, P. Śpiewak, M. Kruszewski","doi":"10.1109/ISSE51996.2021.9467637","DOIUrl":null,"url":null,"abstract":"The paper aims to develop an assembly technique for the connection of bare Si or TiAu metallized Si chips to NiAu plated Cu surface. The thermal interface material (TIM) based on Ag paste was used for this purpose. It was found that Ag-based TIM allows creating sound joints between NiAu plated Cu and both types of Si chips. The analysis of the joints showed that the adhesion is in the range of 10 MPa and thermal resistance is less than 0.3 K/W. Therefore, the fabricated joints fulfil the mechanical and thermal requirements for this type of assemblies.","PeriodicalId":303255,"journal":{"name":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ag-based Thermal Interface Materials for GaN-on-Si Assembly Chips in Power Applications\",\"authors\":\"R. Kisiel, P. Śpiewak, M. Kruszewski\",\"doi\":\"10.1109/ISSE51996.2021.9467637\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper aims to develop an assembly technique for the connection of bare Si or TiAu metallized Si chips to NiAu plated Cu surface. The thermal interface material (TIM) based on Ag paste was used for this purpose. It was found that Ag-based TIM allows creating sound joints between NiAu plated Cu and both types of Si chips. The analysis of the joints showed that the adhesion is in the range of 10 MPa and thermal resistance is less than 0.3 K/W. Therefore, the fabricated joints fulfil the mechanical and thermal requirements for this type of assemblies.\",\"PeriodicalId\":303255,\"journal\":{\"name\":\"2021 44th International Spring Seminar on Electronics Technology (ISSE)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 44th International Spring Seminar on Electronics Technology (ISSE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSE51996.2021.9467637\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 44th International Spring Seminar on Electronics Technology (ISSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSE51996.2021.9467637","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ag-based Thermal Interface Materials for GaN-on-Si Assembly Chips in Power Applications
The paper aims to develop an assembly technique for the connection of bare Si or TiAu metallized Si chips to NiAu plated Cu surface. The thermal interface material (TIM) based on Ag paste was used for this purpose. It was found that Ag-based TIM allows creating sound joints between NiAu plated Cu and both types of Si chips. The analysis of the joints showed that the adhesion is in the range of 10 MPa and thermal resistance is less than 0.3 K/W. Therefore, the fabricated joints fulfil the mechanical and thermal requirements for this type of assemblies.
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