Sixth IEEE International Symposium on Applications of Ferroelectrics最新文献

{"title":"Stability of Perovskite Phase in Pb(Zn1/3Nb2/3)O3and Other A(b'b'')O3Perovskites","authors":"A. Halliyal, T. R. Gururaja, U. Kumar, A. Safari","doi":"10.1109/ISAF.1986.201177","DOIUrl":"https://doi.org/10.1109/ISAF.1986.201177","url":null,"abstract":"","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115576273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Positive Temperature Coefficient Resistors as High Power Pulse Switches","authors":"R. Ford, M. Kahn","doi":"10.1109/ISAF.1986.201230","DOIUrl":"https://doi.org/10.1109/ISAF.1986.201230","url":null,"abstract":"","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"24 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114130118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thin-Film Reflection Filters Having Nonuniform Multiperiodic Interface Corrugations","authors":"O. Asfar","doi":"10.1109/ISAF.1986.201089","DOIUrl":"https://doi.org/10.1109/ISAF.1986.201089","url":null,"abstract":"","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"7 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127451482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Properties of Lithium Niobate Thin Polycrystalline Films Deposited on Silicon Substrates","authors":"T. Cholapranee, L. Fabiny","doi":"10.1109/ISAF.1986.201211","DOIUrl":"https://doi.org/10.1109/ISAF.1986.201211","url":null,"abstract":"Thin films of LiNbO, approximately 1 p n in thickness have been r-f sputtered onto single crystal silicon substrates. X-ray diffraction studies have confirmed the polycrystalline nature of the f i l m and the fact that the c axis of the crystallite shows a preference for being normal to the surface. Photo excitation studies have indicated a further preference for the +c axis to be directed away from the substrate. A thin, semitransparent, conducting electrode was deposited on the surface of the lithium niobate and electrical properties of the resultant s m c t u e were made. Current vs voltage and capacitance vs voltage measurements were made at several frequencies. Residual changes after illumination were observed. Photo currents were also measured. 1. Fabrication and characterization of the structure. Thin films of lithium niobate approximately one micron thick have been deposited by r-f sputtering on < I 11> silicon substrates. LiNbO, powder with 10% Li,O added to compensate for Li loss was used as the target. Both n and p type silicon substrates were used. Various substrate temperature from 80' C to 600' C were used. Approximately equal partial pressures of Ar and O2 were used in the sputtering process which continued for about 8 hours in order to deposit a 1 p n thick Nm. A thin aluminum film (<lOOOA) was deposited on the surface to make possible the application of a uniform electric field to the lithium niobate. The area of the aluminum is Before this addition of the aluminum film the thickness of the lithium niobate was measured with an interference microscope. The crystal structure and orientation was studied using X-ray diffraction techniques. It was found that the films obtained from sputtering with the substrate temperature less than 600' C had amorphous structures. After the films were annealed in an oxygen rich atmosphere at 600' C for about 10 hours, some small lithium niobate peaks were observed. For films deposited with a substrate temperature of 600' C the Xray diffraction results of Figure l b were obtained. Figure la shows a plot of X-ray diffraction peaks of polycrystalline LiNbO, powder (ASTM card 20-631(A)) where the orientation of the crystals is random. The large peak at about 28' in Figure l b is the <111> peak for silicon. There are three discernable peaks from LiNb03 in this plot, i.e. <012>, <006>, and <116>. One can see that the <006> peak is 0.1 crn 2. 100 I 20 30 40 50 60 Z Q (degrees) Figure 1) X-Ray diffraction results. (a) LiNbQ, powder (AS7 card 20-631(A)) (b) 1 pn rf sputtered LiNbU, on (iii) silicon. Sample 16c. Light on Light o f f","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126805000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"EPR Evidence for Pretransitional Excitations in the Paraelectric Phases of KD2PO4, Nh4H2AsO4, ND4D2AsO4","authors":"K. Nakagawa, N. Dalal, A. H. Reddoch","doi":"10.1109/ISAF.1986.201190","DOIUrl":"https://doi.org/10.1109/ISAF.1986.201190","url":null,"abstract":"EPR lineshape studies of SeOk3in KD2P04 and CrOk3in NH,HZAsO, and ND,D,AsO, around Tc provide direct evidence of excitations exhibiting the symmetry of the low as well as high temperature phases simultaneously. Critical slowing down from lifetimes s (T > Tc) to -lo-' s (T < Tc) has been established for KD2P04.","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127722196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modified Lead Zinc Niobate Ceramic Electrostrictors for Micropositioner Applications","authors":"U. Kumar, A. Halliyal, L. Cross","doi":"10.1109/ISAF.1986.201222","DOIUrl":"https://doi.org/10.1109/ISAF.1986.201222","url":null,"abstract":"","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124236954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dielectric Properties of RF Sputered Bismuth Titanate Thin Films","authors":"Prasanta Ghosh, A. Bhalla, L. Cross","doi":"10.1109/ISAF.1986.201214","DOIUrl":"https://doi.org/10.1109/ISAF.1986.201214","url":null,"abstract":"S e v e r a l a t t e m p t s [S-101 have been made t o p r e p a r e s t o i c h i o m e t r i c Bi4Ti3OI2 f i l m s in o r d e r t o d u p l i c a t e i t s s i n g l e c r y s t a l p r o p e r t i e s . Var ious p r e p a r a t i o n t e c h n i q u e s , i n c l u d i n g RF s p u t t e r i n g . were used f o r t h e Bi4Ti3012 t h i n f i l m p repa ra t ion . In t h i s p a p e r we r e p o r t t h e p r e p a r a t i o n o f t h i n f i l m s of Bi4Ti3012 and t h e i r d i e l e c t r i c p r o p e r t i e s . Abs t roc t","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123268087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Antiferroeleciric to Ferroelectric Switching in Lead Zirconate Titanate Stannate Ceramics","authors":"W. Pan, L. Cross","doi":"10.1109/ISAF.1986.201226","DOIUrl":"https://doi.org/10.1109/ISAF.1986.201226","url":null,"abstract":"","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122310621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Piezoelectric Ceramic Materials For Surface Acoustic Wave Applications","authors":"G. Shapiro, K. El-Assal, M. Sayer, C. Jen","doi":"10.1109/ISAF.1986.201180","DOIUrl":"https://doi.org/10.1109/ISAF.1986.201180","url":null,"abstract":"","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133340338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Frequency Dielectrics and Their Applications","authors":"K. Wakino","doi":"10.1109/ISAF.1986.201104","DOIUrl":"https://doi.org/10.1109/ISAF.1986.201104","url":null,"abstract":"D i e l e c t r i c r e s o n a t o r ce ramics have ga ined an i m p o r t a n t p o s i t i o n a s a key e lement f o r microwave components. m a t e r i a l s commonly used i n d i e l e c t r i c r e s o n a t o r ce ramics a r e i n t r o d u c e d h e r e . T h e i r d i e l e c t r i c c o n s t a n t s K a r e 2 1 , 25 , 30, 38, and 90 , and t h e i r Q v a l u e s ( Q D = l / t a n 6 ) a r e 5,000, 2 0 , 0 0 0 , 10,000, 5,000, and 500 a t 10 GHz. The p e c u l i a r i t i e s such as h i g h K , h igh Q and good t empera tu re s t a b i l i t y must be cons ide red c a r e f u l l y when choos ing of m a t e r i a l . The 6 a p p l i c a t i o n s cons ide red h e r e a r e 1 ) c o a x i a l type a n t e n n a bandpass f i l t e r s f o r c e l l u l a r mobi le r a d i o s , 2 )mono l i th i c t ype an tenna bandpass f i l t e r s of c e l l u l a r hand-held r a d i o s , 3 , 4 ) m i c r o s t r i p l i n e f i l t e r s and d i e l e c t r i c l o c a l o s c i l l a t o r s of SHF-TV c o n v e r t e r s , 5 )channe l dropping f i l t e r s of c e l l u l a r base s t a t i o n s and 6)nar row band f i l t e r s of mar ine s a t e l l i t e communicaticns equipme-it . The d i e l e c t r i c c h a r a c t e r i s t i c s o f 5 b a s i c","PeriodicalId":302681,"journal":{"name":"Sixth IEEE International Symposium on Applications of Ferroelectrics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133704029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}