{"title":"A 256-channel digital switch module IC","authors":"G. Surace, G. Sumerling, D. Parker, A. Morgan","doi":"10.1109/ISSCC.1982.1156304","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156304","url":null,"abstract":"A 256-channel non-blocking digital crosspoint for use in 32- channel 2.048MHz PCM systems will be described. Utilizing 5μ N-channel silicon-gate technology and incorporating 4Kb DRAM, the LSI chip has a power consumption of 200mW.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133206258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Custom macro design in VLSI bipolar technology","authors":"J. Coleman, K. Mathews, Yee-Ming Ting","doi":"10.1109/ISSCC.1982.1156367","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156367","url":null,"abstract":"A custom bipolar VLSI microprocessor chip will be discussed. Chip contains 4208 logic circuits, including 14 PLAs and a 13Kb ROM. The loaded average propagation delay per logic stage is 2.0 ns.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131465967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Technology needs of the information age","authors":"J. Mayo","doi":"10.1109/ISSCC.1982.1156351","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156351","url":null,"abstract":"Today, at the threshold of the information age, an accelerating change in our way of life is already apparent, a change likely to have an impact more profound than that of the industrial revolution. This transition in our society is paced by the merging of telecommunications and data processing, but a much wider range of industries will be affected. Those that respond, adapt and contribute to the change will emerge in leadership roles. Others are doomed to be relics of the Past. Solid-state electronics is the workhorse of the information age, but despite remarkable progress, substantial obstacles remain. Barriers in key technologies such as monolithic circuits, optoelectronics and microwave communications are rapidly being overcome. However, in disciplines such as interfacing of data Processing and communication systems, development of software, generation and control of large data bases, and the man-machine interface, revolutionary Progress is still required. Leading-edge technologies are already affecting the business environment. However, the technological requirements of the information age will ultimately be defined in the residence - the setting where its impact will be felt most broadly. It is here that the dominant problems of the information age will be confronted.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128247337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The future of high-speed logic in MOS, bipolar, GaAs, and Josephson junction ICs","authors":"C. Liechti","doi":"10.1109/ISSCC.1982.1156375","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156375","url":null,"abstract":"During the 80s, line widths and spaces will shrink by an order of magnitude, gate delays will decrease by a factor of 3-5, and devices per unit area will increase by at least an order of magnitude. These drastic improvements will have significant impact on systems approaches and capabilities, but will raise questions about manufacturability and product reliability. Panelists will assess approaches, projections, limitations and applications in the next decade.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127478970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A bar code reader IC","authors":"R. McCharles","doi":"10.1109/ISSCC.1982.1156293","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156293","url":null,"abstract":"A self-contained bar-code reader chip, using analog switched-capacitor techniques, will be described. Circuit employs a standard Si-gate digital CMOS process to combine an on-chip photodiode with preamplification, rejection of background illumination, and ac-coupled detection.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124298584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Measurement of intrinsic capacitances of MOS transistors","authors":"J. Paulos, D. Antoniadis, Y. Tsividis","doi":"10.1109/ISSCC.1982.1156289","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156289","url":null,"abstract":"An electrometer/coulombmeter circuit technique to measure capacitance characteristics of the MOS transistor will be discussed. Experimental data for substrate capacitances, non-reciprocal elements and non-quasi-static effects, compared to theory, will be presented.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114445972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Smith, B. Bateman, P. Sharp, J. Dishaw, J. Smudski
{"title":"32K and 16K MOS RAMs using laser redundancy techniques","authors":"R. Smith, B. Bateman, P. Sharp, J. Dishaw, J. Smudski","doi":"10.1109/ISSCC.1982.1156342","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156342","url":null,"abstract":"NMOS static RAMs (4906 × 8b and 2048 × 8b) incorporating laser redundancy techniques will be described. The approach involves the use of conservative 4μm design rules and conventional projection printer lithography with large die sizes and multiple redundant elements.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114505152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Alternative design approaches for monolithic GaAs ICs","authors":"A. Podell, E. Crescenzi","doi":"10.1109/ISSCC.1982.1156382","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156382","url":null,"abstract":"GaAs diodes and FETs have penetrated into applications, ranging from dc to light. However, monolithic GaAs ICs, consisting of diodes, FETs and passive elements, have not as yet proved to be cost effective replacements for their hybrid counterparts. The panel will appraise the technological and economic reasons for this condition and project likely future trends.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120936456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Device applications of beam crystallized silicon-on-insulators","authors":"J. Gibbons","doi":"10.1109/ISSCC.1982.1156287","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156287","url":null,"abstract":"The properties of CW beam recrystallized thin polysilicon films on insulating substrates will be presented. MOSFET devices and simple ICs processed on this material have electrical characteristics similar to devices fabricated on single crystal material, offering significant promise for future applications.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116778265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Tang, P. Solomon, Tak Ning, R. Isaac, R. Burger
{"title":"1.25µm deep-groove-isolated self-aligned ECL circuits","authors":"D. Tang, P. Solomon, Tak Ning, R. Isaac, R. Burger","doi":"10.1109/ISSCC.1982.1156298","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156298","url":null,"abstract":"IN THIS PAPER we report the characteristics of 1.25pm ECL circuits with maximum speed of 114ps ata power dissipation of 4.9mW. Such performance is achieved through the combination of properly designed bipolar devices and an advanced bpolar technology featuring self-ali ed polysilicon-base contact and deep-groove device isolation¿. The 1.25pm minimum feature size was defined using electron-beam lithography.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121717136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}