1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers最新文献

筛选
英文 中文
A 256-channel digital switch module IC 一个256通道数字交换模块IC
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156304
G. Surace, G. Sumerling, D. Parker, A. Morgan
{"title":"A 256-channel digital switch module IC","authors":"G. Surace, G. Sumerling, D. Parker, A. Morgan","doi":"10.1109/ISSCC.1982.1156304","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156304","url":null,"abstract":"A 256-channel non-blocking digital crosspoint for use in 32- channel 2.048MHz PCM systems will be described. Utilizing 5μ N-channel silicon-gate technology and incorporating 4Kb DRAM, the LSI chip has a power consumption of 200mW.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133206258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Custom macro design in VLSI bipolar technology VLSI双极技术中的定制宏设计
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156367
J. Coleman, K. Mathews, Yee-Ming Ting
{"title":"Custom macro design in VLSI bipolar technology","authors":"J. Coleman, K. Mathews, Yee-Ming Ting","doi":"10.1109/ISSCC.1982.1156367","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156367","url":null,"abstract":"A custom bipolar VLSI microprocessor chip will be discussed. Chip contains 4208 logic circuits, including 14 PLAs and a 13Kb ROM. The loaded average propagation delay per logic stage is 2.0 ns.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131465967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Technology needs of the information age 技术是信息时代的需要
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156351
J. Mayo
{"title":"Technology needs of the information age","authors":"J. Mayo","doi":"10.1109/ISSCC.1982.1156351","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156351","url":null,"abstract":"Today, at the threshold of the information age, an accelerating change in our way of life is already apparent, a change likely to have an impact more profound than that of the industrial revolution. This transition in our society is paced by the merging of telecommunications and data processing, but a much wider range of industries will be affected. Those that respond, adapt and contribute to the change will emerge in leadership roles. Others are doomed to be relics of the Past. Solid-state electronics is the workhorse of the information age, but despite remarkable progress, substantial obstacles remain. Barriers in key technologies such as monolithic circuits, optoelectronics and microwave communications are rapidly being overcome. However, in disciplines such as interfacing of data Processing and communication systems, development of software, generation and control of large data bases, and the man-machine interface, revolutionary Progress is still required. Leading-edge technologies are already affecting the business environment. However, the technological requirements of the information age will ultimately be defined in the residence - the setting where its impact will be felt most broadly. It is here that the dominant problems of the information age will be confronted.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128247337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The future of high-speed logic in MOS, bipolar, GaAs, and Josephson junction ICs MOS、双极、GaAs和约瑟夫森结ic中高速逻辑的未来
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156375
C. Liechti
{"title":"The future of high-speed logic in MOS, bipolar, GaAs, and Josephson junction ICs","authors":"C. Liechti","doi":"10.1109/ISSCC.1982.1156375","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156375","url":null,"abstract":"During the 80s, line widths and spaces will shrink by an order of magnitude, gate delays will decrease by a factor of 3-5, and devices per unit area will increase by at least an order of magnitude. These drastic improvements will have significant impact on systems approaches and capabilities, but will raise questions about manufacturability and product reliability. Panelists will assess approaches, projections, limitations and applications in the next decade.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127478970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A bar code reader IC 一种条码读取器IC
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156293
R. McCharles
{"title":"A bar code reader IC","authors":"R. McCharles","doi":"10.1109/ISSCC.1982.1156293","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156293","url":null,"abstract":"A self-contained bar-code reader chip, using analog switched-capacitor techniques, will be described. Circuit employs a standard Si-gate digital CMOS process to combine an on-chip photodiode with preamplification, rejection of background illumination, and ac-coupled detection.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124298584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurement of intrinsic capacitances of MOS transistors MOS晶体管固有电容的测量
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156289
J. Paulos, D. Antoniadis, Y. Tsividis
{"title":"Measurement of intrinsic capacitances of MOS transistors","authors":"J. Paulos, D. Antoniadis, Y. Tsividis","doi":"10.1109/ISSCC.1982.1156289","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156289","url":null,"abstract":"An electrometer/coulombmeter circuit technique to measure capacitance characteristics of the MOS transistor will be discussed. Experimental data for substrate capacitances, non-reciprocal elements and non-quasi-static effects, compared to theory, will be presented.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114445972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
32K and 16K MOS RAMs using laser redundancy techniques 使用激光冗余技术的32K和16K MOS ram
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156342
R. Smith, B. Bateman, P. Sharp, J. Dishaw, J. Smudski
{"title":"32K and 16K MOS RAMs using laser redundancy techniques","authors":"R. Smith, B. Bateman, P. Sharp, J. Dishaw, J. Smudski","doi":"10.1109/ISSCC.1982.1156342","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156342","url":null,"abstract":"NMOS static RAMs (4906 × 8b and 2048 × 8b) incorporating laser redundancy techniques will be described. The approach involves the use of conservative 4μm design rules and conventional projection printer lithography with large die sizes and multiple redundant elements.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114505152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Alternative design approaches for monolithic GaAs ICs 单片GaAs集成电路的备选设计方法
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156382
A. Podell, E. Crescenzi
{"title":"Alternative design approaches for monolithic GaAs ICs","authors":"A. Podell, E. Crescenzi","doi":"10.1109/ISSCC.1982.1156382","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156382","url":null,"abstract":"GaAs diodes and FETs have penetrated into applications, ranging from dc to light. However, monolithic GaAs ICs, consisting of diodes, FETs and passive elements, have not as yet proved to be cost effective replacements for their hybrid counterparts. The panel will appraise the technological and economic reasons for this condition and project likely future trends.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120936456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device applications of beam crystallized silicon-on-insulators 束流结晶绝缘体上硅的器件应用
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156287
J. Gibbons
{"title":"Device applications of beam crystallized silicon-on-insulators","authors":"J. Gibbons","doi":"10.1109/ISSCC.1982.1156287","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156287","url":null,"abstract":"The properties of CW beam recrystallized thin polysilicon films on insulating substrates will be presented. MOSFET devices and simple ICs processed on this material have electrical characteristics similar to devices fabricated on single crystal material, offering significant promise for future applications.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116778265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1.25µm deep-groove-isolated self-aligned ECL circuits 1.25µm深槽隔离自对准ECL电路
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156298
D. Tang, P. Solomon, Tak Ning, R. Isaac, R. Burger
{"title":"1.25µm deep-groove-isolated self-aligned ECL circuits","authors":"D. Tang, P. Solomon, Tak Ning, R. Isaac, R. Burger","doi":"10.1109/ISSCC.1982.1156298","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156298","url":null,"abstract":"IN THIS PAPER we report the characteristics of 1.25pm ECL circuits with maximum speed of 114ps ata power dissipation of 4.9mW. Such performance is achieved through the combination of properly designed bipolar devices and an advanced bpolar technology featuring self-ali ed polysilicon-base contact and deep-groove device isolation¿. The 1.25pm minimum feature size was defined using electron-beam lithography.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121717136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书