Workshop on Nanostructure Science, Metrology, and Technology最新文献

{"title":"Silicon technology: from micro to nano and why federal investment matters","authors":"Kathleen Kingscott","doi":"10.1117/12.427103","DOIUrl":"https://doi.org/10.1117/12.427103","url":null,"abstract":"By Kathleen Kingscott Presented September 5, 2001 Let me begin by expressing my thanks for the privilege and opportunity to address you today. I would like to provide you with an industry-based perspective of nanotechnology in order to help you understand why we at IBM view nanotechnology to be so important. What is nanotechnology? For some, nanotechnology is narrowly defined as a technology in which structures are assembled in a “bottom up” manner by placing the individual atoms into desired positions. But for many others, nanotechnology is used to refer to any technology which incorporates structures which generally are of nanometer dimensions, regardless of how those structures were created. I shall use this second definition. It is important to understand what a nanometer is. If you were to take four atoms and line them up in a row (something that we can do these days) the row of atoms would be about a nanometer long. You should also understand that while science research at the nanometer scale is a real and burgeoning endeavor, nano technology is largely a vision of possible future technologies. Nanotechnology is coming. It is premature to say just when and in what form nanotechnology will take hold. We cannot predict the industries in which it will have its first impact. But the signals are clear enough: over the last decade there has been remarkable progress made in laboratories all around the world. The motivation is clear enough: nanotechnology holds tremendous promise for how it would impact our lives. Let me give you just one example from the computer industry. If we could store and access information on a nanometer length scale, it would be feasible for me to have a device which would give me near instant access to every piece of text ever written. It could store every sound of my life and many images as well. Nanostructured materials hold the promise of being stronger and lighter than conventional materials. This would have innumerable beneficial impacts from more fuel efficient and safer airplanes and cars, for example. Nanostructured materials will become ubiquitous. Why is nanotechnology important? History teaches us that each time man has extended his ability to structure matter, whether it be to shape an ax from rock or a microprocessor from silicon, the benefits are extraordinary and enduring. Nanotech is the next frontier. Why does IBM invest in nanotechnology research? The steady advance of semiconductor and data storage technologies has been the road along which the entire computer industry marches. For","PeriodicalId":291028,"journal":{"name":"Workshop on Nanostructure Science, Metrology, and Technology","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126105958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanometer science and technology (Viewgraphs Only)","authors":"J. Murday","doi":"10.1117/12.427109","DOIUrl":"https://doi.org/10.1117/12.427109","url":null,"abstract":"52Nanostructure Science, Metrology, and Technology, Martin C. Peckerar, Michael T. Postek, Jr.,Editors, Proceedings of SPIE Vol. 4608 (2002) © 2002 SPIE · 0277-786X/02/$15.00Downloaded From: http://proceedings.spiedigitallibrary.org/pdfaccess.ashx?url=/data/conferences/spiep/28388/ on 06/22/2017 Terms of Use: http://spiedigitallibrary.org/ss/termsofuse.aspx","PeriodicalId":291028,"journal":{"name":"Workshop on Nanostructure Science, Metrology, and Technology","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115110387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrashallow p+ junctions in silicon formed by molecular-beam epitaxy using boron delta doping","authors":"P. E. Thompson, J. Bennett","doi":"10.1117/12.437270","DOIUrl":"https://doi.org/10.1117/12.437270","url":null,"abstract":"Ultra-shallow junction layers are required for deep submicron CMOS and quantum devices. Low-temperature (320 °C) molecular-beam epitaxy was used to form highly conductive, ultra-shallow layers in silicon using boron delta doping. The as-grown junction depths, determined with secondary ion mass spectrometry, ranged from 7 nm to 18 nm. A minimum resistivity of 3 x 10 -4 Ω-cm was obtained when the delta-doped layers were spaced 2.5 nm apart. The sheet resistances of the epitaxial layers, plotted as a function of junction depth, followed the theoretical curve for a box-doped layer having a boron doping concentration equal to the solid solubility limit, 6 x 10 20 /cm 3 . Minimal change was detected in either the atomic profiles or the resistivity after a 10 s rapid thermal anneal (RTA) or a 10 min furnace anneal (FA) up to 700 °C. The sheet resistances of the as-grown shallow junctions are substantially less than those obtained by ion implantation. Only after the 800 °C FA did the MBE-grown layers degrade to have as large a sheet resistance as the best ion implanted layers.","PeriodicalId":291028,"journal":{"name":"Workshop on Nanostructure Science, Metrology, and Technology","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129544881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical energy conversion in crystalline nanowires","authors":"S. Mao, R. Russo, P. Yang","doi":"10.1117/12.438455","DOIUrl":"https://doi.org/10.1117/12.438455","url":null,"abstract":"One-dimensional nanostructures hold the promise of becoming critical elements for next generation nanoscale electronic and photonic devices. While significant efforts have been devoted to the development of nanotube or nanowire based transistors, little has been done on their photonic counterpart. Here we summarize our recent efforts on one-dimensional crystalline nanostructures, in particular, the zinc oxide (ZnO) nanowires grown on a sapphire substrate. ZnO is a wide bandgap (3.37 eV) compound semiconductor that is especially suitable for blue and ultraviolet (UV) optoelectronic applications. Room-temperature optical energy conversion and stimulated UV light emission from ZnO nanowires are emphasized, along with a discussion of potential applications of nanoscale lasers.","PeriodicalId":291028,"journal":{"name":"Workshop on Nanostructure Science, Metrology, and Technology","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126672765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-cost nanostructure patterning using step and flash imprint lithography","authors":"S. Sreenivasan, C. Willson, N. Schumaker, D. Resnick","doi":"10.1117/12.437804","DOIUrl":"https://doi.org/10.1117/12.437804","url":null,"abstract":"This article is directed towards nanolithography, which is the unit process required to pattern nanostructures. While the critical dimension in the microelectronics industry is continually going down due to developments in photolithography, it is coming at the expense of exponential increase in lithography tool costs and rising photomask costs. Step and Flash Imprint Lithography (S-FIL) is a nano-patterning technique that not only results in significantly lower cost of the lithography tool and process consumables, but also appears to be at least as good as photolithography in other aspects of patterning costs. In this study, a comparison of S-FIL with Extreme Ultraviolet (EUV) photolithography technique is provided at the 50nm node . Advantages and disadvantages of S-FIL for various application sectors are provided. Finally, cost of ownership (CoO) computations of S-FIL versus EUV is provided. CoO computations indicate that SFIL may be the cost-effective technology in the sub-100nm domain, particularly for emerging devices that are required in low volumes.","PeriodicalId":291028,"journal":{"name":"Workshop on Nanostructure Science, Metrology, and Technology","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130940846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanostructures and biology: some introductory remarks","authors":"M. Postek, M. Peckerar","doi":"10.1117/12.427104","DOIUrl":"https://doi.org/10.1117/12.427104","url":null,"abstract":"The following collection of material is an introduction to cross-disciplinary efforts centering on the study and control of living systems. Cross-disciplinary interactions in the field of biology are not new. Mendel’s work in genetics was a fusion of biology and the mathematical science of statistics.","PeriodicalId":291028,"journal":{"name":"Workshop on Nanostructure Science, Metrology, and Technology","volume":"55 5-6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131496725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanoelectronics: a military perspective","authors":"G. Borsuk","doi":"10.1117/12.427105","DOIUrl":"https://doi.org/10.1117/12.427105","url":null,"abstract":"The opportunity afforded by nanoscience and technology offers a broadening of scope in electronics technologies and creates the foundation for the Nanoelectronics Era. Superior electronics is a major force-multiplier for military systems. It is anticipated that nanoelectronics will augment the power of this multiplier. This paper explores the scientific and technological trends that will produce nanoelectronics and gives a few examples of the military applications of this emerging technology.","PeriodicalId":291028,"journal":{"name":"Workshop on Nanostructure Science, Metrology, and Technology","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132210089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"New design and uncertainty budget for a metrology UHV-STM used in direct measurements of atom spacings","authors":"S. Gonda, Hui Zhou, J. Fu, R. Silver","doi":"10.1117/12.465125","DOIUrl":"https://doi.org/10.1117/12.465125","url":null,"abstract":"A basic scheme of direct, highly accurate dimensional measurements of nanostructures is presented. We have constructed a scanning tunneling microscope (STM) unit combined with a diode laser-based Michelson interferometer module. The compact size of the STM allows it to be installed in an ultra high vacuum (UHV) chamber and is capable of measuring atomic spacings on a reconstructed single crystal surface. This method aims at direct dimensional calibration of microelectronic structures such as linewidths and line/space features. The calibrated dimensions of these features will be traceable to the international unit of length through the He-Ne laser wavelength and be a reliable standard for next generation nanostructures and nanofabrication.","PeriodicalId":291028,"journal":{"name":"Workshop on Nanostructure Science, Metrology, and Technology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115070252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Clusters on semiconductor surfaces","authors":"O. Glembocki, S. Prokes, T. Kennedy, A. Rajagopal","doi":"10.1117/12.437690","DOIUrl":"https://doi.org/10.1117/12.437690","url":null,"abstract":"Recent theoretical analysis and experimental investigations indicate that the physics of clusters deposited on semiconductor surfaces such as Silicon may be a promising future avenue for nanostructure science. Clusters of small number (5 - 10) of atoms in free space have also been shown to have interesting energy structures as well as magnetic and electrical moments. We report on the formation of Mn islands on Si(111) surfaces and their optical scattering response. We show that Mn islands of diameter 15 to 30nm exhibit paramagnetism at low temperatures, while thick films of Mn do not. In addition, our experiments verify previous theoretical suggestions that polarized optical scattering can be used to detect magnetism in small clusters. We will discuss some of these along with possible future applications of cluster physics.","PeriodicalId":291028,"journal":{"name":"Workshop on Nanostructure Science, Metrology, and Technology","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122023547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Biology and nanoscience: summary of discussions of the biology and nanoscience panel of the SPIE workshop on nanotechnology","authors":"T. Lebrun","doi":"10.1117/12.465476","DOIUrl":"https://doi.org/10.1117/12.465476","url":null,"abstract":"Summary of Discussions of the Biology and Nanoscience panel of the SPIE workshop on Nanotechnology T. LeBrun National Institute of Standards and Technology, 100 Bureau Drive Gaithersburg, MD 20899 The marriage of nanotechnology tools and concepts with biological systems is in its infancy, and the potential for revolutionary advances in areas such as Health Care can barely be imagined at this early stage. While biomedical applications will certainly be one of the most important application areas, nanobiological systems will also almost certainly be important in areas that are not traditionally biological, such as computing and sensing. The application of biologically-inspired solutions in new areas such as computing and sensing is one of four important technical trends and challenges discussed by the panel. These trends are: biology as a blueprint for nanoscale engineering, the importance of developing new tools to lay the groundwork for future advances, the need to integrate diverse (and currently incompatible) technologies to produce hybrid devices, and the overarching systems engineering challenges that will circumscribe progress. This paper summarizes the discussions of the Biology and Nanoscience panel of the SPIE workshop on Nanotechnology held at NIST in Gaithersburg. The outline of this summary is presented below, with each of the four areas discussed in a separate section in the following text. Definitions Operational rather than a line in the sand Critical Application Areas  Medicine: early diagnosis, treatment, and prevention  Leveraging biosystems in new environments (e.g. computation, sensing) Technical Keys  Tools to elucidate fundamental science  Biology as inspiration and metaphor  Integration of diverse technologies for hybrid devices  Systems engineering Organizational Challenges  Bridge from proven concept to commercial devices","PeriodicalId":291028,"journal":{"name":"Workshop on Nanostructure Science, Metrology, and Technology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124974436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}