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2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)最新文献

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A PR-RC Controller for LCL-Type SVG to Suppress the Harmonic Distortion 一种用于lcl型SVG抑制谐波失真的PR-RC控制器
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS) Pub Date : 2021-11-13 DOI: 10.1109/peas53589.2021.9628444
Lintao Ren, Fei Wang, Yu Shi, L. Gao
{"title":"A PR-RC Controller for LCL-Type SVG to Suppress the Harmonic Distortion","authors":"Lintao Ren, Fei Wang, Yu Shi, L. Gao","doi":"10.1109/peas53589.2021.9628444","DOIUrl":"https://doi.org/10.1109/peas53589.2021.9628444","url":null,"abstract":"Static var generator (SVG) is mostly utilized under polluted grid conditions with certain power quality problems, of which the grid disturbance will lead to the distortion of grid-side current. Compound repetitive control (RC), as an effective method to suppress periodic distortion of grid-connected converters and improve the dynamic response of conventional RC, has been adopted in existing approaches. However, existing modeling methods based on small gain theorem are too complicated to decouple compound RC. Therefore, the coupling effects among the controllers of compound RC are revealed in this paper. And a universal stability domain for compound RC scheme can be directly obtained. Furthermore, a proportional resonant RC (PR-RC) control strategy is proposed to improve the dynamic response of the SVG under a-b-c coordinate. Experimental results demonstrate the effectiveness and correctness of the theoretical analysis.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121178636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Multi-conductor Distributed Capacitance Equivalent Model of Planar Transformer for GaN-based LLC Converter 基于gan的LLC变换器的平面变压器多导体分布电容等效模型
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS) Pub Date : 2021-11-13 DOI: 10.1109/peas53589.2021.9628516
Yuxuan Chen, Wenjie Chen, Yue Cao, Pengyuan Ren, Xingwei Huang, Xu Yang
{"title":"A Multi-conductor Distributed Capacitance Equivalent Model of Planar Transformer for GaN-based LLC Converter","authors":"Yuxuan Chen, Wenjie Chen, Yue Cao, Pengyuan Ren, Xingwei Huang, Xu Yang","doi":"10.1109/peas53589.2021.9628516","DOIUrl":"https://doi.org/10.1109/peas53589.2021.9628516","url":null,"abstract":"Planar PCB magnetic elements have become increasingly popular in the design of wide-band-gap converters based on SiC and GaN to reach a higher power density. The parasitic capacitance in planar transformers often cannot be ignored because of the large area of copper and the very thin dielectric between PCB layers. A multi-conductor distributed capacitance equivalent model for planar transformer is proposed in this paper to establish a more accurate high frequency model for wide-band-gap converters which have planar transformer. The 3D winding structure of planar transformer can be converted into 2D circuit model through finite element simulation and numerical analysis. Two GaN-based experimental prototype with switching frequencies of 500 kHz and 1 MHz respectively are built and tested in order to verify the accuracy of the multi-conductor distributed capacitance model. The experimental results show that the trend of common-mode EMI spectrum distribution predicted by the multi-conductor capacitance model is closer to the measured spectrum than which predicted by traditional one-capacitor model, and its amplitude error can be basically kept within 10dBμV.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115734426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and Analysis of a 75 kVA High-Frequency-Link Based Three-Port Power Electronic Transformer 75kva高频链路型三端口电力电子变压器的设计与分析
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS) Pub Date : 2021-11-13 DOI: 10.1109/peas53589.2021.9628583
Minjiang Xiang, Yang Liu, Haoyu Wang, Wei Li, Shancheng Su, Shiqi Ji
{"title":"Design and Analysis of a 75 kVA High-Frequency-Link Based Three-Port Power Electronic Transformer","authors":"Minjiang Xiang, Yang Liu, Haoyu Wang, Wei Li, Shancheng Su, Shiqi Ji","doi":"10.1109/peas53589.2021.9628583","DOIUrl":"https://doi.org/10.1109/peas53589.2021.9628583","url":null,"abstract":"This paper presents a three-port power electronic transformer (PET) based on high-frequency-link (HFL). Compared with traditional common DC bus based topology, the HFL based topology can reduce power conversion levels. Meanwhile, the electrical isolation among all ports can also be realized. By using the modular multi active bridge (MMAB), which is the basic unit in the PET, the scalability both in voltage and power levels can be guaranteed. The model of a three-port power electronic transformer, including LVAC port, LVDC port and MVDC port, based on HFL is analyzed and the control strategy is proposed. Finally, the three-port PET is verified by simulation and experimental results.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131902706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Uneven Current Mitigation in Single IGBT Chip with Multiple Metallization Regions Using Staggered Bonding Wires Layout 采用交错键合线布局的多金属化区单IGBT芯片不均匀电流缓解
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS) Pub Date : 2021-11-13 DOI: 10.1109/peas53589.2021.9628700
Ankang Zhu, Junjie Mao, Yu Chen, Haoze Luo, Wuhua Li, Xiangning He
{"title":"Uneven Current Mitigation in Single IGBT Chip with Multiple Metallization Regions Using Staggered Bonding Wires Layout","authors":"Ankang Zhu, Junjie Mao, Yu Chen, Haoze Luo, Wuhua Li, Xiangning He","doi":"10.1109/peas53589.2021.9628700","DOIUrl":"https://doi.org/10.1109/peas53589.2021.9628700","url":null,"abstract":"The IGBT chip with large area and multiple metallization regions is popular in applications with large capacity. However, uneven current among metallization regions due to asymmetrical common inductance limits the expected capacity. Hence, this paper proposes a novel model to describe the uneven dynamic current among metallization regions and introduces the influence of switching speed, parasitic inductance and chip transconductance. Based on the analytical model, a staggered bonding wires layout is proposed to suppress the uneven current and semiconductor-circuit coupling simulations established by Sentaurus TCAD are carried out to verify the validity of the proposed method finally.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123275731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN-based quasi-vertical Schottky barrier diodes with the sidewall field plate termination for obtaining low leakage current and high breakdown voltage 基于gan的准垂直肖特基势垒二极管，其侧壁场极板端接可获得低泄漏电流和高击穿电压
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS) Pub Date : 2021-11-13 DOI: 10.1109/peas53589.2021.9628512
Fuping Huang, Chunshuang Chu, Yonghui Zhang, Kangkai Tian, Xingyu Jia, Han Peng, Zi-hui Zhang
{"title":"GaN-based quasi-vertical Schottky barrier diodes with the sidewall field plate termination for obtaining low leakage current and high breakdown voltage","authors":"Fuping Huang, Chunshuang Chu, Yonghui Zhang, Kangkai Tian, Xingyu Jia, Han Peng, Zi-hui Zhang","doi":"10.1109/peas53589.2021.9628512","DOIUrl":"https://doi.org/10.1109/peas53589.2021.9628512","url":null,"abstract":"In this work, we demonstrate and fabricate a GaN-based quasi-vertical Schottky barrier diode (SBD) with the sidewall field plate structures (SFP) on sapphire substrate. The fabricated SFP-SBD with a 3 μm drift layer exhibits excellent reverse blocking characteristics, e.g., the low leakage current is maintained at ~ 10-9 A/cm2 until hard breakdown occurs, and the breakdown voltage (BV) can reach ~ 420 V. The enhanced reverse blocking characteristics can be well attributed to the decreased local strong electric field at Schottky contact interface and electrode edge with the help of SFP structures. Meanwhile, the simulation results present that the thick field plate insulator, e.g., 1 μm SiO2 in this work, can share a large part electric field from the Schottky contact interface in the condition of high reverse bias, which well reduces the leakage current. Moreover, the SFP structure does not make a markable degradation for the forward conduction characteristics, e.g., a turn-on voltage (Von) of ~ 0.6 V and a specific on-resistance (Ron. sp) of ~ 10 mΩ•cm2 can also be obtained for the fabricated SFP-SBD in this work.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123564301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Impulse Voltage Reduction Method for Reliable Grid Connection 一种新的可靠并网冲击降压方法
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS) Pub Date : 2021-11-13 DOI: 10.1109/peas53589.2021.9628841
Zhenlin Wang, Qixing Huang, Song Xu, Lijuan Wang, Wei Jiang, S. Hashimoto
{"title":"A Novel Impulse Voltage Reduction Method for Reliable Grid Connection","authors":"Zhenlin Wang, Qixing Huang, Song Xu, Lijuan Wang, Wei Jiang, S. Hashimoto","doi":"10.1109/peas53589.2021.9628841","DOIUrl":"https://doi.org/10.1109/peas53589.2021.9628841","url":null,"abstract":"When the reliable energy DC microgrid is connected to or cut off from the utility grid, there will remain an impulse current or voltage to both the microgrid and the utility grid. This paper proposes a flexible control method for reducing the impulse voltage and current while the DC microgrid is connected or cut off from the utility grid. Different control strategies are applied for different situations (divided as connect in and cut off). The main control method has been detailed introduced and the simulation has been carried out in MATLAB/SIMULINK environment, the control efficiency has been successfully verified through the simulation results.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126581333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
State-of-Charge Balancing and power sharing control method of energy storage system in DC microgrid 直流微电网中储能系统的电量平衡与功率共享控制方法
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS) Pub Date : 2021-11-13 DOI: 10.1109/peas53589.2021.9628469
Meina Zhou, Wen Wang, Pan Lu, Qiong Liu, Huaze Shi, Zicheng Yin
{"title":"State-of-Charge Balancing and power sharing control method of energy storage system in DC microgrid","authors":"Meina Zhou, Wen Wang, Pan Lu, Qiong Liu, Huaze Shi, Zicheng Yin","doi":"10.1109/peas53589.2021.9628469","DOIUrl":"https://doi.org/10.1109/peas53589.2021.9628469","url":null,"abstract":"State of charge (SoC) difference among the battery energy storage units (BEUs) easily causes the overcharge or over-discharge of the batteries. Different line resistances between the BEUs and the point of common connection (PCC) raises the problem of output power and SoC unbalance of the BEUs. This paper proposes a feedback control strategy to achieve both SoC balancing and output power sharing between the BEUs. The average of all the BEUs’ SoC is set as the SoC reference of each BEUs, and the control objectives are achieved by regulating the output voltage of the BEUs. Simulations verified that the proposed control strategy can achieve accurate SoC balancing and output power sharing with capacities.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114309278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Data-Driven Fault Classification for Non-Inverting Buck–Boost DC–DC Power Converters Based on Expectation Maximisation Principal Component Analysis and Support Vector Machine Approaches 基于期望最大化主成分分析和支持向量机方法的非逆变降压型DC-DC电源变换器数据驱动故障分类
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS) Pub Date : 2021-11-13 DOI: 10.1109/peas53589.2021.9628697
Yichuan Fu, Zhiwei Gao, Haimeng Wu, Xiuxia Yin, A. Zhang
{"title":"Data-Driven Fault Classification for Non-Inverting Buck–Boost DC–DC Power Converters Based on Expectation Maximisation Principal Component Analysis and Support Vector Machine Approaches","authors":"Yichuan Fu, Zhiwei Gao, Haimeng Wu, Xiuxia Yin, A. Zhang","doi":"10.1109/peas53589.2021.9628697","DOIUrl":"https://doi.org/10.1109/peas53589.2021.9628697","url":null,"abstract":"Data-driven fault classification for power converter systems has been taking more into considerations in power electronics, machine drives, and electric vehicles. It is challenging to classify the different topologies of faults in the real-time monitoring control systems. In this paper, a data-driven and supervised machine learning-based fault classification technique is adopted by combining and consolidating with Expectation Maximisation Principal Component Analysis (EMPCA) and Support Vector Machine (SVM) to substantiate the availability of fault classification. The proposed methodology is applied to the non-inverting Buck–Boost DC–DC power converter systems subjected to the incipient fault and serious fault, respectively. Finally, the feasibility of the approach is validated by intensive simulations and comparison studies.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124061448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermal Balance Control of Lithium-ion Battery Packs Based on Bi-directional Flyback Converter 基于双向反激变换器的锂离子电池组热平衡控制
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS) Pub Date : 2021-11-13 DOI: 10.1109/peas53589.2021.9628740
Fan Wu, Xiuqing Yi, F. Gao
{"title":"Thermal Balance Control of Lithium-ion Battery Packs Based on Bi-directional Flyback Converter","authors":"Fan Wu, Xiuqing Yi, F. Gao","doi":"10.1109/peas53589.2021.9628740","DOIUrl":"https://doi.org/10.1109/peas53589.2021.9628740","url":null,"abstract":"Aiming at the temperature inconsistency of series-connected lithium-ion battery packs, a thermal balance control strategy for lithium-ion battery packs based on bi-directional flyback converters is proposed. This strategy can ensure that the system tracks the reference value of the output power of the system, and uses the surface temperature of the lithium-ion battery as the balance criterion. By adjusting the balance current of the bi-directional flyback converter circuit, the temperature balance in the series-connected lithium-ion battery pack can be achieved. It overcomes the battery inconsistency problem caused by the high temperature of batteries, avoids the safety problems of battery pack life degradation or thermal runaway caused by the short-board effect of accelerated aging of some cells, and ensures the stability and safety of the system. A simulation experiment was carried out on the MATLAB/Simulink and COMSOL co-simulation platform to verify the effectiveness of the control strategy.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122115925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High dv/dt in High Voltage SiC IGBT and Method of Suppression 高压SiC IGBT中的高dv/dt及抑制方法
2021 IEEE 1st International Power Electronics and Application Symposium (PEAS) Pub Date : 2021-11-13 DOI: 10.1109/peas53589.2021.9628556
Hangzhi Liu, Jiaqi Guo, Wei Yue, Hengyu Yu, Shiwei Liang, Gaoqiang Deng, Yuwei Wang, Linfeng Deng, Yuming Zhou, Jun Wang, Z. Shen
{"title":"High dv/dt in High Voltage SiC IGBT and Method of Suppression","authors":"Hangzhi Liu, Jiaqi Guo, Wei Yue, Hengyu Yu, Shiwei Liang, Gaoqiang Deng, Yuwei Wang, Linfeng Deng, Yuming Zhou, Jun Wang, Z. Shen","doi":"10.1109/peas53589.2021.9628556","DOIUrl":"https://doi.org/10.1109/peas53589.2021.9628556","url":null,"abstract":"In this paper, an extensive investigation on high dv/dt of High Voltage Silicon Carbide (SiC) Insulated Gate Bipolar Transistor (IGBT) is conducted by the use of accurate two-dimensional (2D) numerical simulations and fundamental physical modeling. The root cause of high dv/dt is identified and revealed, and the physical mechanism behind is analyzed and clarified. It is found that the punch-through (PT) phenomenon is the leading reason that accounts for high dv/dt of SiC IGBT, however, taking measures to eliminate the occurance this phenomenon is not appropriate. To overcome this issue, a simple design method is recommended in this work, and verification by 2D simulation results shows that it is capable of achieving suppressing dv/dt and lowering turn-off energy loss simultaneously.","PeriodicalId":268264,"journal":{"name":"2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)","volume":"10 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116673048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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