ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference最新文献

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Soft Breakdown of Ultra-Thin Gate Oxide Layers 超薄栅氧化层的软击穿
M. Depas, M. Heyns, P. Mertens
{"title":"Soft Breakdown of Ultra-Thin Gate Oxide Layers","authors":"M. Depas, M. Heyns, P. Mertens","doi":"10.1557/PROC-567-307","DOIUrl":"https://doi.org/10.1557/PROC-567-307","url":null,"abstract":"The dielectric breakdown of ultra-thin 3 to 4 nm SiO2 layers used as a gate dielectric in poly-Si gate capacitors is investigated with tunnel current stressing. A soft breakdown phenomenon is demonstrated for these ultra-thin gate oxide layers that corresponds with an anomalous increase of the stress induced leakage current and the occurrence of fluctuations in the current. The occurrence of soft breakdown in these ultra-thin gate oxide layers however is difficult to detect during a standard high-field time dependent dielectric breakdown (TDDB) test.","PeriodicalId":252912,"journal":{"name":"ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131673324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 310
Accurate Modeling of Double Barrier Resonant Tunneling Diodes 双势垒共振隧道二极管的精确建模
ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference Pub Date : 1995-09-01 DOI: 10.1007/978-94-009-1778-1_19
T. van de Roer, M. Hendriks, W. Magnus, M. Henini, H. Heyker, M. Kwaspen, W. G. van der Vleuten, J. Caro, P. Lukey
{"title":"Accurate Modeling of Double Barrier Resonant Tunneling Diodes","authors":"T. van de Roer, M. Hendriks, W. Magnus, M. Henini, H. Heyker, M. Kwaspen, W. G. van der Vleuten, J. Caro, P. Lukey","doi":"10.1007/978-94-009-1778-1_19","DOIUrl":"https://doi.org/10.1007/978-94-009-1778-1_19","url":null,"abstract":"","PeriodicalId":252912,"journal":{"name":"ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128038544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Magnetic Pattern Recognition Sensor Arrays using CCD Readout 利用CCD读出磁模式识别传感器阵列
O. Nixon, A. Nathan
{"title":"Magnetic Pattern Recognition Sensor Arrays using CCD Readout","authors":"O. Nixon, A. Nathan","doi":"10.1139/P96-848","DOIUrl":"https://doi.org/10.1139/P96-848","url":null,"abstract":"Magnetic encoding is currently widely employed in cheques, transaction cards, access cards and bank notes because of its robustness, economy, security, and ease of updating coded information. Coded magnetic information is currently read using either inductive metal-in-gap (MIG) or magnetoresistive (MR) heads.1) Due to various loss mechanisms, the signal-to-noise ratio of MIG heads peaks at around 100 kHz, decreasing rapidly at higher frequencies. The fabrication of both the MIG head2) as well as the accompanying signal processing circuitry3) is also non-trivial. MR heads provide higher SNR and signals that are independent of spatial frequency. They are however fragile, non-linear, and have a high temperature coefficient In cheques and bank notes, human-readable magnetic ink character recognition (MICR) characters are employed. Each MICR character has been designed to produce a distinct inductive head signal pattern. Unlike magnetic stripes, MICR characters signals are not binary when read using conventional read heads, resulting in increased read error rates. To avoid costly misreads, a closely spaced array of magnetic sensors can be utilized. Fabrication of read head arrays is, however, difficult in both technologies. A silicon magnetic sensor array fabricated using the charge-coupled device (CCD) technology has been designed to overcome these limitations. The magnetic sensor pixels are buried-channel MOSFET's with geometries designed to optimize magnetic sensitivity. The use of buried-channel, as opposed to surface-channel, MOSFET's results in enhanced sensitivity, lower noise, and higher signal resolution.","PeriodicalId":252912,"journal":{"name":"ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124231695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Observation of the Electron Reflection from N//N+ Junction in GaAs by Resonant Tunnelling through Pseudo-Quantum Well in Single Barrier Heterostructure 单势垒异质结构中伪量子阱共振隧穿对GaAs中N//N+结电子反射的观察
ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference Pub Date : 1995-09-01 DOI: 10.7567/SSDM.1995.PD-L2-L2
Y. Dubrovskiĭ, T. Andersson, Y. Khanin, I. Larkin, E. Vdovin
{"title":"Observation of the Electron Reflection from N//N+ Junction in GaAs by Resonant Tunnelling through Pseudo-Quantum Well in Single Barrier Heterostructure","authors":"Y. Dubrovskiĭ, T. Andersson, Y. Khanin, I. Larkin, E. Vdovin","doi":"10.7567/SSDM.1995.PD-L2-L2","DOIUrl":"https://doi.org/10.7567/SSDM.1995.PD-L2-L2","url":null,"abstract":"Resonant tunnelling tlhrough virtual states in a wide pseudo-quanttum well is observed at liquid He temperature. This well is formed in the spacer layer region (n<sup>-</sup>-GaAs) of a single barrier heterostructure n<sup>+</sup>-GaAs/n<sup>-</sup>-GaAs/AIAs/n<sup>-</sup>-GaAs/n<sup>+</sup>-GaAs due to the electron reflection from the main barrier at one side and from the smooth potential drop through the n<sup>-</sup>/n<sup>+</sup> junction in the GaAs at the other side. The measured electron reflection coefficient from n<sup>-</sup>/n<sup>+</sup> junction is equal to 0.3%-3% in the energy interval relevant in the work.","PeriodicalId":252912,"journal":{"name":"ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123611475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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