Observation of the Electron Reflection from N//N+ Junction in GaAs by Resonant Tunnelling through Pseudo-Quantum Well in Single Barrier Heterostructure

Abstract

Resonant tunnelling tlhrough virtual states in a wide pseudo-quanttum well is observed at liquid He temperature. This well is formed in the spacer layer region (n^--GaAs) of a single barrier heterostructure n⁺-GaAs/n^--GaAs/AIAs/n^--GaAs/n⁺-GaAs due to the electron reflection from the main barrier at one side and from the smooth potential drop through the n^-/n⁺ junction in the GaAs at the other side. The measured electron reflection coefficient from n^-/n⁺ junction is equal to 0.3%-3% in the energy interval relevant in the work.