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2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2最新文献

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Progress toward a Si-plus architecture: epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics Si +结构的进展:用于III-V/Si多结光伏的外延可积Si亚电池
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2 Pub Date : 2014-06-08 DOI: 10.1109/PVSC-VOL2.2014.7588253
T. Grassman, J. Carlin, S. Carnevale, Ibraheem Al Mansouri, H. Mehrvarz, S. Bremner, A. Ho-baillie, E. Garcia-Tabares, I. Rey‐Stolle, M. Green, Steven A. Ringe
{"title":"Progress toward a Si-plus architecture: epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics","authors":"T. Grassman, J. Carlin, S. Carnevale, Ibraheem Al Mansouri, H. Mehrvarz, S. Bremner, A. Ho-baillie, E. Garcia-Tabares, I. Rey‐Stolle, M. Green, Steven A. Ringe","doi":"10.1109/PVSC-VOL2.2014.7588253","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2014.7588253","url":null,"abstract":"GaP/active-Si junctions were grown by metalorganic chemical vapor deposition via a previously developed process that yields GaP-on-Si integration free of heterovalent-related defects. N-type Si emitter layers were grown on p-type (100)-oriented Si substrates, followed by the growth of n-type GaP window layers, to form fully-active sub-cell structures compatible with integration into monolithic III-V/Si multijunction solar cells. Si bulk minority carrier lifetime was found to track the epitaxial process, with initial degradation followed by full recovery. Fabricated test devices from in-situ (all-epitaxial) GaP/Si structures yielded good preliminary performance characteristics and demonstrate great promise for the epitaxial sub-cell approach. Additional test structures based on ex-situ diffusion processed solar wafers demonstrate the impact and importance of back surface field layers for such sub-cells.","PeriodicalId":251298,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122155239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Intrinsic defect engineering of cuprous oxide to enhance electrical transport properties for photovoltaic applications 氧化亚铜的内在缺陷工程以提高光电应用的电输运性能
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2 Pub Date : 2014-06-08 DOI: 10.1109/PVSC-VOL2.2014.7588254
M. Lloyd, S. Siah, R. Brandt, J. Serdy, S. Johnston, Y. Lee, T. Buonassisi
{"title":"Intrinsic defect engineering of cuprous oxide to enhance electrical transport properties for photovoltaic applications","authors":"M. Lloyd, S. Siah, R. Brandt, J. Serdy, S. Johnston, Y. Lee, T. Buonassisi","doi":"10.1109/PVSC-VOL2.2014.7588254","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2014.7588254","url":null,"abstract":"Intrinsic point-defect species in cuprous oxide films are manipulated based on their thermodynamic properties via the implementation of a controlled annealing process. A wide range of electrical properties is demonstrated, with a window suitable for high-quality solar cell devices. A variation of carrier concentration over two orders of magnitude is demonstrated. Minority carrier lifetime is investigated by means of microwave photoconductance decay measurements, demonstrating a strong correlation with carrier concentration. Spectrally resolved photoluminescence yields are analyzed to provide insight into lifetime limiting mechanisms as a function of Cu2O processing parameters. Hall measurements of carrier mobility and concentration are taken at room temperature to provide insight into the effect of these processing conditions on net ionized defect concentration.","PeriodicalId":251298,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133458809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
In-flight I-V results from the 2nd forward technology solar cell experiment 第二次前沿技术太阳能电池实验的飞行I-V结果
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2 Pub Date : 2014-06-08 DOI: 10.1109/PVSC-VOL2.2014.7588252
P. Jenkins, M. González, K. Trautz, J. Lorentzen, J. Flatico, M. Krasowski, L. Greer
{"title":"In-flight I-V results from the 2nd forward technology solar cell experiment","authors":"P. Jenkins, M. González, K. Trautz, J. Lorentzen, J. Flatico, M. Krasowski, L. Greer","doi":"10.1109/PVSC-VOL2.2014.7588252","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2014.7588252","url":null,"abstract":"The 2nd Forward Technology Solar Cell Experiment (FTSCE II) on board the International Space Station, measured I-V curves on advanced solar cells for 18 months. In this paper we discuss the data reduction methodology of in-flight measurements. Degradation rates, temperature coefficients for production III-V triple junction cells, inverted metamorphic prototype cells, and other experimental solar cells are discussed in a related IEEE Journal of Photovoltaics submission.","PeriodicalId":251298,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125192961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ellipsometry characterization for thin film silicon solar cells 薄膜硅太阳能电池的椭偏仪表征
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2 Pub Date : 2014-06-08 DOI: 10.1109/PVSC-VOL2.2014.7588248
Xiaojing Liu, Wei Zi, S. Liu
{"title":"Ellipsometry characterization for thin film silicon solar cells","authors":"Xiaojing Liu, Wei Zi, S. Liu","doi":"10.1109/PVSC-VOL2.2014.7588248","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2014.7588248","url":null,"abstract":"Spectroscopic ellipsometry was used to optimize p-layer deposition for silicon-based thin film solar cells. It is found that the p layer with a double-layer structure with increased boron-doping gives the highest open-circuit voltage (Voc) of 1.03 V for hydrogenated amorphous silicon (a-Si:H) solar cells. Together with atomic force microscopy and optical transmittance measurements, the cell performance - structure correlation was established. Furthermore, there appears to be the larger the p-layer band gap, the smaller the Voc for a-Si:H solar cells with H2-plasma treatment at i/p interface. It appears that the ellipsometry can be used as an inline diagnostic tool for the player deposition.","PeriodicalId":251298,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127660298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin film PID field failures and root cause determination 薄膜PID现场故障和根本原因的确定
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2 Pub Date : 2014-06-08 DOI: 10.1109/PVSC-VOL2.2014.7588250
N. Olsson, M. Richardson, J. Hevelone
{"title":"Thin film PID field failures and root cause determination","authors":"N. Olsson, M. Richardson, J. Hevelone","doi":"10.1109/PVSC-VOL2.2014.7588250","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2014.7588250","url":null,"abstract":"Potential Induced Degradation (PID) manifests itself as a pre-mature degradation of solar module performance that is dependent on the relative position of the module in a series connected string of modules. In this paper we describe a particular type of PID not previously documented that was experienced in an actual field installation. Measurements and analysis show that the PID originates from current shunt paths in the laser scribes of the monolithically integrated thin-film modules. Root cause of the shunt paths are found to be field driven sodium migration from the glass substrate into the scribe lines causing a severe degradation of the module shunt resistance.","PeriodicalId":251298,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2","volume":" 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132094742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Numerical simulation of the physical processes involved in the potential-induced degradation of conventional silicon solar cells 传统硅太阳能电池电势诱导降解物理过程的数值模拟
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2 Pub Date : 2014-06-08 DOI: 10.1109/PVSC-VOL2.2014.7588251
N. Kindyni, C. Lazarou, G. Georghiou
{"title":"Numerical simulation of the physical processes involved in the potential-induced degradation of conventional silicon solar cells","authors":"N. Kindyni, C. Lazarou, G. Georghiou","doi":"10.1109/PVSC-VOL2.2014.7588251","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2014.7588251","url":null,"abstract":"This paper reports the development and application of a two dimensional transient numerical model for coventional silicon solar cells for the study of the effect of positive ion deposition on the cell's surface occurring during potential-induced degradation (PID). The results obtained from the numerical model indicate the impact of the positive ion deposition on the p-n junction depletion region and the dielectric layer in an area between the grid fingers and busbars of a solar cell. The SixNy layer is shown to be critical for the physical processes associated with the phenomenon.","PeriodicalId":251298,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133420405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The potential of nanoparticle ink-based processing for Chalcogenide photovoltaics 纳米颗粒油墨基加工硫系光伏电池的潜力
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2 Pub Date : 2014-06-08 DOI: 10.1109/PVSC-VOL2.2014.7588255
C. Hages, C. Miskin, Steven M. Mcleod, Wei-Chang D. Yang, Nathaniel J. Carter, E. Stach, R. Agrawal
{"title":"The potential of nanoparticle ink-based processing for Chalcogenide photovoltaics","authors":"C. Hages, C. Miskin, Steven M. Mcleod, Wei-Chang D. Yang, Nathaniel J. Carter, E. Stach, R. Agrawal","doi":"10.1109/PVSC-VOL2.2014.7588255","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2014.7588255","url":null,"abstract":"Nanoparticle ink-based absorber layers coupled with selenization represent a robust method for the formation of chalcogenide photovoltaics with tremendous potential for low-cost, roll-to-roll manufacturing. We first present our current state-of-the-art nanoparticle ink-based devices with total-area efficiencies of 15.0% for Cu(In<sub>y</sub>Ga<sub>1-y</sub>)(S<sub>x</sub>Se<sub>1-x</sub>)<sub>2</sub> (CIGSSe), 9.0% for Cu<sub>2</sub>ZnSn(S<sub>x</sub>Se<sub>1-x</sub>)<sub>4</sub> (CZTSSe), and 9.4% for Cu<sub>2</sub>Zn(S<sub>n</sub>yGe<sub>1-y</sub>)(S<sub>x</sub>Se<sub>1-x</sub>)<sub>4</sub> (CZTGeSSe). Similarities in the material and electrical properties of devices fabricated from all three material families are considered. Major factors contributing to device performance limitations are discussed in terms of absorber morphology and material properties following selenization, notably, alloy (compositional) fluctuations and the presence of a fine-grain layer. Through analysis of these limitations we also present a path forward for the fabrication of high-performance devices. In spite of the present challenges, this technique outperforms many others, demonstrating the tremendous potential of this technology.","PeriodicalId":251298,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129650377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterizing local high-frequency solar variability for use in distribution studies 描述用于分布研究的当地高频太阳变率
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2 Pub Date : 2014-06-08 DOI: 10.1109/PVSC-VOL2.2014.7588249
M. Lave, R. Broderick
{"title":"Characterizing local high-frequency solar variability for use in distribution studies","authors":"M. Lave, R. Broderick","doi":"10.1109/PVSC-VOL2.2014.7588249","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2014.7588249","url":null,"abstract":"Accurately representing the local solar variability at distribution timescales (30-seconds and shorter) is essential to modeling the impact of solar photovoltaics (PV) on distribution feeders. Previous works have examined variability at single locations, but this may not be useful to an operator whose distribution feeder is in a different climate region. In this work, we compare high-frequency variability from 8 locations in the United States. We define a variability metric for quantifying variability and use this metric to quantify and compare the variability at each of the 8 locations. We also explore the relationship between high-frequency and low-frequency (hourly) variability to see if widely-available low-frequency data (e.g., satellite data) may be used to determine variability climate zones. The end goal is to provide high-frequency solar inputs with climatologically representative solar variability for use in distribution studies.","PeriodicalId":251298,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) Volume 2","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124153593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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