Numerical simulation of the physical processes involved in the potential-induced degradation of conventional silicon solar cells

Abstract

This paper reports the development and application of a two dimensional transient numerical model for coventional silicon solar cells for the study of the effect of positive ion deposition on the cell's surface occurring during potential-induced degradation (PID). The results obtained from the numerical model indicate the impact of the positive ion deposition on the p-n junction depletion region and the dielectric layer in an area between the grid fingers and busbars of a solar cell. The SixNy layer is shown to be critical for the physical processes associated with the phenomenon.