2008 2nd IEEE International Nanoelectronics Conference最新文献

{"title":"Temperature characteristics of polysilicon piezoresistive nanofilm depending on film structure","authors":"Xiaowei Liu, Yajing Wu, Rongyan Chuai, Changzhi Shi, Weiping Chen, Jin-Feng Li","doi":"10.1109/INEC.2008.4585631","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585631","url":null,"abstract":"The influence of film structure on temperature characteristics of polysilicon nanofilms (PSNFs) was reported in this paper. Samples were deposited by LPCVD with different film thickness and deposition temperature. The microstructure of films was characterized by SEM, TEM and XRD. By measuring the resistivity and the gauge factor of samples at different temperatures, temperature coefficients of the resistance and the gauge factor (TCR and TCGF) were investigated. Based on the analysis of tunneling piezoresistive effect, the results indicated that PSNFs of ultrahigh doping concentration (around 3times1020 cm-3) have better piezoresistive temperature characteristics than single crystal silicon. By controlling the process parameters like deposition temperature and film thickness, film structure was optimized to obtain a very low resistance temperature coefficient (about plusmn10-4/degC). Moreover TCGF was negative and almost not affected by deposition temperature and film thickness. These conclusions are useful for temperature compensation of polysilicon pressure sensors.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122098196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Carbon nanotubes synthesized by simple thermal chemical vapor deposition and their electrical properties","authors":"X. Zou, H. Abe, T. Shimizu, A. Endo, H. Tokumoto, S.M. Zhu, H. Zhou","doi":"10.1109/INEC.2008.4585477","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585477","url":null,"abstract":"A simple thermal chemical vapor deposition growth technique of multi-walled carbon nanotubes is present. Aligned carbon nanotube arrays on Fe2O3/ SiO2/Si substrates, carbon nanotube film on Pt metal grid substrates, and straight carbon nanotubes on Mo-Fe/silica substrates have been synthesized at lower reaction temperature at atmospheric pressure by pyrolysis of ethyl alcohol as carbon source. The as-synthesized carbon nanotubes were characterized by both scanning electron microscopy and high-resolution transmission electron microscopy. The electrical property measurements of individual multi-walled carbon nanotube grown on Fe2O3/ SiO2/Si silicon substrate and Pt metal grid substrate were performed by homemade dasianano-manipulatorpsila. According to Current-Voltage curves obtained in our experiments, we could calculate the current density that the multi-walled carbon nanotubes could carry is about 107A/cm2, which is much larger than that of normal metals.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129723167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular dynamics simulation of heat distribution during nanometric cutting process","authors":"Y. Liang, Y.B. Guo, M.J. Chen, Q. Bai","doi":"10.1109/INEC.2008.4585584","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585584","url":null,"abstract":"In nanometric cutting process the actual material removal can take place at atomic level, which makes the acquisition of heat distribution difficult or impossible, however a detailed investigation of heat distribution is crucial for understanding the nature of material removal mechanisms, chip formation and surface generation etc. In this work, molecular dynamics (MD) is used to study heat distribution during nanometric cutting of single-crystal silicon with the aid of Tersoff potential. The MD calculation data are converted into continues heat distribution and showed with different colors in 3D images under various cutting parameters. The result of the simulation shows that there is a narrow region with high temperature under tool edge where most of heat generated due to plastic deformation of workpiece material, the high temperature extends from here to chip, diamond tool and workpiece, but the highest temperature lies in chip. The heat distribution is roughly concentric around the tool edge and a steep temperature gradient is observed between diamond tool and chip. A higher temperature region below the tool edge implied a larger shear stress is built up in a local region at high cutting speed with a rougher machined surface behind than at low cutting speed.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124768010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular controlled semiconductor devices","authors":"E. Capua, R. Cao, C. Eraso, I. Levy, R. Naaman","doi":"10.1109/INEC.2008.4585462","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585462","url":null,"abstract":"Two-dimensional arrangements of molecules can show remarkable cooperative electronic effects. Such effects can serve to couple molecular properties with semiconductor devices and to achieve direct electronic sensing of chemical and physical processes via electrostatic effects, i.e., without transfer of charge or matter between the locus of sensing and that of detection.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123420392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis of In2O3 nanowires, nanobouquets and nanopins","authors":"X. Ji, J. Zhai","doi":"10.1109/INEC.2008.4585508","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585508","url":null,"abstract":"Semiconducting oxide In₂O₃ nanostructures were prepared by reduction of In₂O₃ powder at 650 degC through vapour-phase transport process. In₂O₃ nanowires, nanobouquets and nanopins were obtained. The obtained In₂O₃ nanostructures were characterized by the X-ray diffraction measurement, scanning electron microscopy, and transmission electron microscopy.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120963519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of photoluminescence quenching and DC conductivity measurements in polymer-SWNT composite films for various SWNT concentrations","authors":"P. Bhatnagar, P. C. Mathur, I. Singh, L. Bharadwaj, R. Pandey","doi":"10.1109/INEC.2008.4585647","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585647","url":null,"abstract":"Conducting polymer-SWNT composite films have a high potential in the area of Photovoltaic devices and Light emitting diodes. SWNTs have high electron affinity and high mobility for electrons. As a result of this, the separation of photoinduced charges in the solar cell is very fast and efficient. For LEDs, the polymer-SWNT composite films act as efficient electron transporting layer (ETL). In general the mobility for electrons in conducting polymers is much lower than that for holes due to efficient trapping of electrons by the impurities and traps in the polymers. Due to high mobility of electrons in SWNTs, using polymer-SWNT composite film as ETL is a good alternative. In the present work composite solutions of P3HT and SWNTs were prepared in 1,2-dichlorobenzene with nanotube to polymer mass ratios varied from 0 to 30%. To disperse the nanotube powder the solution was ultrasonically agitated for ~5 minutes. The solutions were left undisturbed for ~48 hrs to sediment out the present impurities. The upper half of the solution was decanted to obtain impurity free solution. The films from this solution were spin coated on a glass substrate with the help of spinner. The thickness of the film was measured with the help of Talystep and was ~100 plusmn 10 nm. The photoluminescence (PL) of the film was observed with the help of Shimadzu spectrophotometer. It was found that the PL intensity decreases by ~90% as the concentration of the SWNT is increased from 0 to 30%. This decrease is due to transfer of electrons from P3HT to SWNTs before the exciton in the polymer can decay radiatively to emit PL. For measuring do conductivity the composite films were spin coated on a glass substrate having Al coating. Six Al contacts having an area of 0.25 cm2 were deposited on the upper surface of the film and conductivity was measured with the help of Keithley sourcemeter in sandwiched structures. It was found that conductivity increases by more than five orders of magnitude with the increase of SWNT concentration. The composite films can therefore act as good electron transporter for LEDs and efficient electron acceptor for solar cells.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116354679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and electrical characteristic of P-type ZnO film on indium-tin-oxide glass substrate by ultrasonic spray pyrolysis","authors":"Jing Chen, W. Lei, Chi Li, Xiaobing Zhang, Xiaowei Sun, B. Ling","doi":"10.1109/INEC.2008.4585502","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585502","url":null,"abstract":"This paper has present a transparent diode device fabricated by p and n type ZnO films using ultrasonic spray pyrolysis (USP) method. The ammonia is added to the solution to provide the N-source and the P type ZnO can be obtained. I-V curve for the transparent diode can be measured and the turn-on voltage of the diode device is 2.3V.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"435 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116508412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spin-dependent transport characteristics across magnetic nanoscale junctions through doped IV and III/V semiconductors","authors":"Keqiang Wang, J. Stehlík, Jian-qing Wang","doi":"10.1109/INEC.2008.4585660","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585660","url":null,"abstract":"We have studied spin-dependent transport across magnetic metallic strips deposited on doped Si and GaAs in a wide range of temperatures up to the ambient temperature, and found strong evidence of coherent spin transport through the magnetic metal into the semiconductors at the elevated temperatures. First, spin transport through Si doped GaAs was studied between two cobalt strips separated by a 100 mum. It was found that there was well-defined field modulated resistance variation in low magnetic field range (<100 Oersted) at T= 300 K. A moderate variation of 3% was observed in samples with light doping (~1014/cm3), which exhibited non-ohmic contact behavior demonstrating two oppositely polarized Schottky barriers for the two Co strips. The field modulation was found to be dependent on the current, and the temperature dependence of resistance with excitation energy was close to that of the Si dopant. Further, tunneling characteristics were measured on e-beam lithographically patterned spin-dependent tunneling (SDT) lines on n-doped Si, to study ballistic transport from ferromagnetic nano-lines via AlOx barrier into group IV semiconductor. The measurement was done using dual lock-in amplifiers, multi-channel voltmeter, in adder circuit with low noise operational amplifiers. Nano-scaled 100 nm STD junction lines closely spaced (100 nm) were fabricated on P doped Si as injection contacts. The measured I-V characteristics and the differential conductance (dI/dV) versus the bias voltage (V) versus temperature, from 84 to 300 K, through a STD junction showed weak temperature dependences. For example, from 84 to 250 K in the measured dI/dV at low bias range was found to be independent of T, which demonstrated clearly ballistic transport from ferromagnetic nano-contacts into the semiconductor.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"261 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126206189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-walled carbon nanotubes under N ion beam irradiation","authors":"A. Ishaq, L. Yan, J. Gong, D. Zhu","doi":"10.1109/INEC.2008.4585640","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585640","url":null,"abstract":"The multi-walled carbon nanotubes (MWCNTs) irradiated by N ion beams at different temperatures were investigated. At the irradiation dose of 1times1017 ions/cm2, the MWCNTs completely became amorphous at room temperature. The amorphous carbon of the N ion irradiated MWCNTs could be evaporated by 5 KeV focused electron beam irradiation. That is, the irradiated MWCNTs could be modified by the low energy electron beam irradiation. Nevertheless, with increasing the temperature, the radiation damage in MWCNTs that could destroy the structure was minimized. Moreover, at the temperature of 800 K, the interconnection of adjacent parallel MWCNTs could be realized at the irradiation dose of 1.5times1017 ions/cm2. This interconnection was ascribed to the fact that two adjacent MWCNTs shared a common graphene.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125841231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Local structural properties and growth mechanism of ZnO nanostrcutures","authors":"E. Jeong, Sang-Wook Han, L. Vayssieres","doi":"10.1109/INEC.2008.4585674","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585674","url":null,"abstract":"We investigated the growth mechanism of ZnO nanorods using in-situ extended X-ray absorption fine structure (EXAFS). ZnO nanorods were synthesized with a solution method and the structural properties around zinc atoms were measured by the in-situ EXAFS at every process. The synthesis was started with the solution of ZnNO3 powder and H2O. The solution was added with an amino acid complex and then heated up to 80degC. The EXAFS revealed that the zinc atoms of the solution had only two oxygen atoms without any second neighboring atoms, implying that ZnNO3 is amorphous. When the complex was applied to the solution, the second neighboring Zn atoms appeared, although there was a substantial amount of structural disorders existing in the Zn-Zn pairs. This result suggests that the nitrogen ions in the complex play a role in clustering ZnO. At 80degC, ZnO was rapidly crystallized and the structural disorders disappeared. The in-situ EXAFS measurements provided the critical information of ZnO crystallization in the solution.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130226772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}