{"title":"Self-organized pattern formation by ion beam erosion","authors":"B. Rauschenbach, B. Ziberi, F. Frost","doi":"10.1109/INEC.2008.4585444","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585444","url":null,"abstract":"The dot and ripple surface topography emerging on Si, Ge and compound semiconductor surfaces during low-energy (les2000 eV) noble gas ion beam erosion at oblique ion incidence is studied. The results show that there is a much more complex behavior of the surface topography with ion energy, ion fluence, angle of incidence, etc.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130070957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Surfactant-assisted growth of multipod In(OH)3 microcrystals via facile hydrothermal process","authors":"Q.C. Liu, J. Dai, Y.J. Yang","doi":"10.1109/INEC.2008.4585615","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585615","url":null,"abstract":"Multipod structures In(OH)3, even more than four rod-like pods unit at the same junction, have been successfully synthesized in high yields in the presence of cetyltrimethyl - ammonium bromide (CTAB) as a surfactant via a simple hydrothermal process. The diameter of each pod of these multipod structures is quite uniform along its length, and the typical diameters of the pods range from 200 nm to 250 nm. The products were characterized by X-ray powder diffraction (XRPD), field emission scanning electron microscopy (FE-SEM) and diffused reflectance spectroscopy (DRS) spectra. It has been found that CTAB plays important roles in the formation of In(OH)3 multipod structures. A possible growth mechanism is discussed.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130260039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Preparation and electrical conductivity of Ni/NiO composites using microwave radiation","authors":"M. Panapoy, S. Supattanapalapol, B. Ksapabutr","doi":"10.1109/INEC.2008.4585526","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585526","url":null,"abstract":"Nanocrystals of nickel (Ni) and nickel oxide (NiO) composites were synthesized in a short time by the microwave assisted sol-gel process using nickel nitrate hexahydrate as the raw material and nitric acid as the catalyst. For conventional calcination, Ni/NiO composites showed the electrical conductivity in the range of 1.94 times 10-9 - 8.40 times 10-9 S/m. For a microwave-induced solution combustion synthesis, the electrical conductivity of Ni/NiO composites was in the range of 0.1-3.4 S/m. The amount of Ni and its crystallite size can be tuned by the microwave parameters (microwave power and exposure time), leading to the formation of Ni/NiO nanocomposites. With increasing the total exposure energy above 40 kJ during microwave radiation, the crystallite size of NiO phase was enhanced and the electrical conductivity of Ni/NiO composites was reduced. Moreover, SEM and TEM analysis revealed that the Ni/NiO nanoparticles were obtained.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114520661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K.L. Foo, Rusli, M. Yu, N. Singh, K. Buddharaju, Y.S. Sun, L. Chan, C. Ng
{"title":"P-i-n junction in silicon nanowires","authors":"K.L. Foo, Rusli, M. Yu, N. Singh, K. Buddharaju, Y.S. Sun, L. Chan, C. Ng","doi":"10.1109/INEC.2008.4585682","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585682","url":null,"abstract":"P-i-n junctions were fabricated along silicon nanowires of about 8 nm in cross-sectional dimension via the conventional top-down approach. Rectifying electrical characteristics have been observed and the ideality factor is estimated to be 3.8, attributed to trapped charges in the encapsulating silicon dioxide layer. Dopants diffusion along the nanowires reduces the effective length of the intrinsic region. The reverse bias breakdown exhibiting a negative temperature coefficient could be attributed to tunneling effect. The p-i-n junctions respond well to illumination despite their small capture area and preliminary results on photoresponse will be presented.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114328312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Synthesis of PMN by mechanochemical process","authors":"Cheng Chen, Cheng Zhang, D. Xie, Qiang Li","doi":"10.1109/INEC.2008.4585570","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585570","url":null,"abstract":"PMN (Pb(Mg1/3Nb2/3)O3) is used in many high-tech fields due to its dielectric and other advantages, the preparation of PMN by traditional methods exists some problems, such as impurity phase. In this paper a novel mechanochemical method to synthesize PMN was reported, MgO, PbO and Nb2O5 without any purification utilized as raw materials were mixed by ball-milling in advance, and the mixture was characterized by XRD, BET and SEM to identify the structure and the dispersion. It was indicated that the materials were dispersed better and no crystal phase transformation was observed after pre-milling. Then the pre-milling powders were poured into the milling jar to grind under different conditions. As-received powders were examined by XRD and SEM. The influence of milling time on the structure of the products was analyzed, which could obviously indicate the solid-state reaction route during grinding. The radio of raw materials and the speed of milling were changed gradually, and their effects on solid-state reaction were studied in details. All samples synthesized at different conditions were testified by XRD to confirm the chemical composition. The morphology were analyzed by SEM, which revealed typical microstructure of nano scale. It was found that the speed of rotary was the key factor to influence the solid state reaction. It came to the conclusion that the pure PMN could be produced at the lower speed. It was considered that mechanochemical process was an efficient, fast and easy way to prepare the nano-scale PMN.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"13 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128538396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Conjugated polymers as novel electrochemical and optical DNA sensors","authors":"J. Travas-sejdic, Hui Peng, J. Spires, C. Soeller","doi":"10.1109/INEC.2008.4585669","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585669","url":null,"abstract":"A range of novel gene sensing methodologies based on intrinsically conducting polymers composed of modified polypyrroles and polythiophenes that were synthesized in the authorspsila laboratory are outlined and discussed. These sensors are based on the electrochemical transduction of the hybridization event by conducting polymer thin films. Optical gene detection schemes have also been developed based on cationic conjugated polymer and quantum dots homogeneous assays. The electrochemical and optical readout modalities are compared and discussed.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134241900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Subminiature gas sensor based on the Photonic crystals","authors":"Wang Ziyu, Han Kui, Shen Xiao-peng","doi":"10.1109/INEC.2008.4585492","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585492","url":null,"abstract":"In this paper, we design a symmetric Mach-Zehnder interferometer (MZI) gas sensor based on two-dimensional Photonic crystals (Phc), which is filled with the gases of different refractive index in the holes of the silicon plate. Self-Collimation (SC) effect analyzed by equi-frequency contour (EFC) is used to route the propagation of light straightly; the bending and splitting of lights are realized by the line-defect structures. Finite Difference Time Domain (FDTD) simulations show that the outputs of the MZI vary with the gas in the test arm and a pi phase shift of the two output light beams is achieved as the gas refractive index n=1.24. By analyzing the corresponding relationship between the output results and the refractive index of gases in the test arm, it can act as a gas sensor. Finally, we conclude the mechanisms of the outputs and analyze the phase shift and the Effective Index (neff) in the SC direction which is calculated by the radio of vector-k As the wavelength lambda=632.8 nm (the wavelength of CO2 laser), the size of the MZI is as small as 6745 nm times 6745 nm. Thus, we realize the micromation of the sensor, which may play an important role in high-density integration design.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133300117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. H. Nai, S.Z. Wang, A. M. Moo, V. Vinciguerra, J. Kasim, Z. Shen
{"title":"Fabrication of CNT interconnect structures and active devices using laser beam manipulation and deposition","authors":"M. H. Nai, S.Z. Wang, A. M. Moo, V. Vinciguerra, J. Kasim, Z. Shen","doi":"10.1109/INEC.2008.4585638","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585638","url":null,"abstract":"A maskless and non-invasive technique based on optical trapping is used for the direct writing of CNT patterns on Si wafers. Interconnections and active transistor devices are fabricated at room temperatures using this technique.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123866477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design For Manufacturing (DFM) in Nano-CMOS era","authors":"Yuhua Cheng","doi":"10.1109/INEC.2008.4585541","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585541","url":null,"abstract":"This paper overviews DFM for IC design in nano-CMOS technologies. Process/device issues relevant to the manufacturability of ICs in advanced CMOS technologies will be presented first before an exploration on process/device modeling for DFM is done. The discussion also covers a brief introduction of DFM-aware of design flow and EDA efforts to better handle the design-manufacturing interface in very large scale IC design environment.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130165907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nanostructured silicon thin films prepared by layer-by-layer deposition technique","authors":"G. B. Tong, S. Gani, M. Muhamad, S. A. Rahman","doi":"10.1109/INEC.2008.4585637","DOIUrl":"https://doi.org/10.1109/INEC.2008.4585637","url":null,"abstract":"Nanostructured silicon thin films prepared by layer-by-layer deposition technique were studied. The films were grown at different deposition conditions such as radio-frequency (rf) power, hydrogen to silane flow-rate ratio and substrate temperature. The effect of these deposition conditions on the surface morphology, hydrogen bonding property and crystallinity of the films were studied. These properties were investigated using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), micro-Raman spectroscopy and X-ray diffraction (XRD). The results showed various morphological features of nanostructured silicon thin films which consist of clusters of nanocrystallites surrounded by grain boundaries. Raman results showed the presence of crystalline phase in these films which was contributed by the nanocrystallites. FTIR results demonstrated presence of Si-H2 bonds which we believe were present in the grain boundaries separating the nanocrystallites from each other in the clusters and also Si-H bonds which were present in the amorphous phase separating the clusters.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130029944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}