{"title":"Differential input topologies with immunity to electromagnetic interference","authors":"F. Michel, M. Steyaert","doi":"10.1109/ESSCIRC.2011.6044900","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2011.6044900","url":null,"abstract":"Differential input structures and their immunity to electromagnetic interference (EMI) are discussed and measured. EMI signals coupling into analog circuits can have levels of up to 40 Vpp according to recent industrial EMI specifications [6]. In order to maintain circuit operation under such high disturbances several on chip modifications of standard circuitry are proposed. Low EMI levels can be partly handled by high impedance input structures, whereas for the full EMI specification of 40 Vpp a low input impedance structure has been developed, that prevents ESD clipping by EMI attenuation to the chip voltage range while calibrating for mismatch induced signal deterioration.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129116655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Mao, M. DavidSarmiento, Qin Zhou, Jian Chen, Peng Wang, Z. Zou, F. Jonsson, Lirong Zheng
{"title":"A 90nm CMOS UHF/UWB asymmetric transceiver for RFID readers","authors":"J. Mao, M. DavidSarmiento, Qin Zhou, Jian Chen, Peng Wang, Z. Zou, F. Jonsson, Lirong Zheng","doi":"10.1109/ESSCIRC.2011.6044894","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2011.6044894","url":null,"abstract":"This paper presents an integrated asymmetric transceiver in 90nm CMOS technology for RFID reader. The proposed reader uses UHF transmitter to power up and inventory the tags. In the reverse link, a non-coherent Ultra-wide Band (UWB) receiver is deployed for data reception with high throughput and ranging capability. The transmitter delivers 160 kb/s ASK modulated data by an integrated modulator and a Digital Controlled Oscillator (DCO) in UHF band with 11% tuning range. The DCO consume 6 mW with 0.12 mm2 area. On the other side, adopting two integration channels, the 3–5 GHz energy detection receiver supports maximum 33 Mb/s data rate both in OOK and PPM modulations. The receiver front-end provides 59 dB voltage gain and 8.5 dB noise figure (NF). Measurement results shows that the receiver achieves an input sensitivity of −79 dBm at 10 Mb/s, with power consumption of 15.5 mW.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129059495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Linearity and intrinsic gain enhancement techniques using positive feedbacks to realize a 1.2-V, 200-MHz, +10.3-dBm of IIP3 and 7th-order LPF in a 65-nm CMOS","authors":"Y. Sugimoto","doi":"10.1109/ESSCIRC.2011.6044923","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2011.6044923","url":null,"abstract":"Linearity and intrinsic gain enhancement techniques for realizing high-performance and low-voltage analog circuits in a deep-submicron CMOS are introduced. In place of a differential amplifier for the voltage-to-current (V/I) conversion at the input, a V/I conversion using a linear resistor and a positive feedback in a pseudo-differential configuration was adopted. The positive feedback concept was also applied to enhance the intrinsic gain of the deep-submicron MOS transistor which is used as a current source to realize high output impedance in amplifiers. In order to verify the effectiveness of the proposed techniques, a MOS 7th-order Gm-C linear phase low-pass-filter (LPF) was realized using a 65-nm CMOS process. Evaluation results showed that the −3 dB frequency bandwidth, group delay ripple, 3rd-order distortion and 3rd-order input intercept point (IIP3) were 200 MHz, 2.2%, less than −55 dB with a 100-MHz input and +10.3 dBm, respectively, all with a ±0.1 Vp-p signal input at each input terminal in pseudo differential configuration, while the LPF including an output buffer dissipated 60 mW from a 1.2-V supply.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"63 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120943109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Georgas, J. Orcutt, Rajeev J Ram, V. Stojanović
{"title":"A monolithically-integrated optical receiver in standard 45-nm SOI","authors":"M. Georgas, J. Orcutt, Rajeev J Ram, V. Stojanović","doi":"10.1109/ESSCIRC.2011.6044993","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2011.6044993","url":null,"abstract":"A monolithically-integrated optical receiver for low-energy on-chip and off-chip communication is presented. The monolithic photodiode integration enables the energy-efficient and high-sensitivity sense-amplifier-based receiver design. The receiver is characterized in situ and shown to operate with μA-sensitivity at 3.5 Gb/s with a power consumption of 180 μW (52 fJ/bit) and area of 108 μm2. This work demonstrates that photonics and electronics can be jointly integrated in a standard 45-nm SOI process.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"261 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122807836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vibhu Sharma, S. Cosemans, M. Ashouei, J. Huisken, F. Catthoor, W. Dehaene
{"title":"8T SRAM with Mimicked Negative Bit-lines and Charge Limited Sequential sense amplifier for wireless sensor nodes","authors":"Vibhu Sharma, S. Cosemans, M. Ashouei, J. Huisken, F. Catthoor, W. Dehaene","doi":"10.1109/ESSCIRC.2011.6044939","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2011.6044939","url":null,"abstract":"This design sets a record low energy consumption (average RD/WR) of 2.65pJ/access for a 64kbit embedded SRAM operating at 90MHz in 65nm LP CMOS. This low energy and variability resilient SRAM macro ensures write-ability with an innovative Mimicked Negative Bit-line technique. The novel low energy Charge Limited Sequential sense amplifier consumes 11.36fJ/decision and obtains σVoffset of 14.297mV without requiring calibration.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114271534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Eversmann, A. Lambacher, T. Gerling, Alexander Kunze, P. Fromherz, R. Thewes
{"title":"A neural tissue interfacing chip for in-vitro applications with 32k recording / stimulation channels on an active area of 2.6 mm2","authors":"B. Eversmann, A. Lambacher, T. Gerling, Alexander Kunze, P. Fromherz, R. Thewes","doi":"10.1109/ESSCIRC.2011.6044902","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2011.6044902","url":null,"abstract":"A neural tissue interfacing chip for in-vitro applications is presented based on an extended 0.5 μm, 5 V, standard CMOS process. The chip provides 256 × 128 bidirectional recording / stimulation sites on a total active area of 2.28 mm × 1.14 mm, and a fully digital interface. Full frame recording rate is 2.4 kHz. Selection of a subset of sites is possible and translates into higher bandwidth per site accordingly. Electrical and biological results are presented which reveal proper functionality.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117108390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Massoud Tohidian, A. Fotowat-Ahmady, M. Kamarei, F. Ndagijimana
{"title":"High-swing class-C VCO","authors":"Massoud Tohidian, A. Fotowat-Ahmady, M. Kamarei, F. Ndagijimana","doi":"10.1109/ESSCIRC.2011.6045015","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2011.6045015","url":null,"abstract":"By removing the tail current source of a class-C VCO, a high-swing VCO core has been introduced. The use of a transformer has added an additional degree of freedom so that a bias control circuit can adjust gate bias of the switching pair to a low voltage for the highest tank swing. High efficiency of class-C operation combined with high output swing led to a first class phase noise performance. The VCO oscillating at 5.11GHz, draws 1.44mA from a 0.6V power supply. The measured phase noise is −127dBc/Hz at 3MHz offset frequency resulting in a FoM of 192.3dB.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124528356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Heng Zhang, Junhua Tan, Chao Zhang, Hongbo Chen, E. Sánchez-Sinencio
{"title":"A 0.6-to-200MSPS speed reconfigurable and 1.9-to-27mW power scalable 10bit ADC","authors":"Heng Zhang, Junhua Tan, Chao Zhang, Hongbo Chen, E. Sánchez-Sinencio","doi":"10.1109/ESSCIRC.2011.6044983","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2011.6044983","url":null,"abstract":"A 0.6-to-200MSPS speed reconfigurable 0.49pJ/conversion 10bit ADC is implemented in a 90nm digital CMOS process. The proposed technique configures the ADC architecture for optimal power at a specific speed, while maintaining constant biasing current for each stage. The principal advantage of this approach is that speed programming is effected on the architectural rather than the circuit level, obviating large bias-current variations inherent in conventional approaches. This ADC achieves the widest speed reconfigurable range with a competitive low power performance and Figure-of-Merit (FOM).","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124870485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jonathan Müller, B. Stefanelli, A. Frappé, Lu Ye, A. Cathelin, A. Niknejad, A. Kaiser
{"title":"A 7-bit 18th order 9.6 GS/s FIR filter for high data rate 60-GHz wireless communications","authors":"Jonathan Müller, B. Stefanelli, A. Frappé, Lu Ye, A. Cathelin, A. Niknejad, A. Kaiser","doi":"10.1109/ESSCIRC.2011.6044916","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2011.6044916","url":null,"abstract":"This paper presents the design and measurements of a 4× oversampled 18th order digital low-pass FIR filter aimed at replacing all analog baseband filters in a 60 GHz high data-rate wireless communication transmitter. Pipeline CPL adders and TSPC flip-flops are used to enable a very high output sample rate. The filter area is 0.1mm2 in a standard 65nm CMOS process. The interpolator has been designed to work at 10 GS/s. Measurements can be performed up-to 9.6 GHz on a 1.4V supply voltage and the filter consumes 400 mW.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131431875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A low leakage 500MHz 2T embedded dynamic memory with integrated semi-transparent refresh","authors":"Anselme Vignon, S. Cosemans, W. Dehaene","doi":"10.1109/ESSCIRC.2011.6044937","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2011.6044937","url":null,"abstract":"This paper presents a low-leakage 128 kbit dynamic memory based on a 2T dynamic cell. The design is implemented in a logic 90 nm technology and achieves a low static power consumption of 130 μW and an access time of 2 ns. It has a worst case retention time of 175 μs. This performance is achieved by introducing an optimized hierarchical organization and peripheral circuits for the read, the write and the refresh operations. A novel writing mechanism for 2T cells using a two phases approach is demonstrated. The area penalty of using short read bitlines is alleviated using a charge transfer sense amplifier. A novel local write sense amplifier that can operate as a latch makes it possible to perform the refresh operation at the local level, improving the energy efficiency of the refresh operation. The memory includes an integrated automatic refresh mechanism. During refresh cycles, most read and write operations can still be performed. In cases where the address conflicts with the refresh operation, the memory handles access recovery internally","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130721943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}