发布求助
文献互助 智能选刊 最新文献

Handbook for III-V High Electron Mobility Transistor Technologies最新文献

筛选
英文 中文
Source/Drain, Gate and Channel Engineering in HEMTs hemt的源/漏、栅极和通道工程
Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI: 10.1201/9780429460043-4
P. Das, T. Lenka, S. Mahato, A. K. Panda
{"title":"Source/Drain, Gate and Channel Engineering in HEMTs","authors":"P. Das, T. Lenka, S. Mahato, A. K. Panda","doi":"10.1201/9780429460043-4","DOIUrl":"https://doi.org/10.1201/9780429460043-4","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126995559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Double Gate High Electron Mobility Transistors 双栅高电子迁移率晶体管
Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI: 10.1201/9780429460043-16
Ajith Ravindran
{"title":"Double Gate High Electron Mobility Transistors","authors":"Ajith Ravindran","doi":"10.1201/9780429460043-16","DOIUrl":"https://doi.org/10.1201/9780429460043-16","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128483718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications 用于高速低功耗应用的InP/InAlAs/InGaAs hemt
Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI: 10.1201/9780429460043-12
N. Jaiswal, V. N. Ramakrishnan
{"title":"InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications","authors":"N. Jaiswal, V. N. Ramakrishnan","doi":"10.1201/9780429460043-12","DOIUrl":"https://doi.org/10.1201/9780429460043-12","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125606553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System 磁控溅射系统对AlGaN/GaN HEMT元素和表面表征的研究
Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI: 10.1201/9780429460043-13
Roman Garcia-Perez, K. Lozano, Jorge Castillo, H. Huq
{"title":"A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System","authors":"Roman Garcia-Perez, K. Lozano, Jorge Castillo, H. Huq","doi":"10.1201/9780429460043-13","DOIUrl":"https://doi.org/10.1201/9780429460043-13","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126450137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AlGaN/GaN HEMT Modeling and Simulation AlGaN/GaN HEMT建模与仿真
Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI: 10.1201/9780429460043-10
B. Syamal, A. Kundu
{"title":"AlGaN/GaN HEMT Modeling and Simulation","authors":"B. Syamal, A. Kundu","doi":"10.1201/9780429460043-10","DOIUrl":"https://doi.org/10.1201/9780429460043-10","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"304 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131757946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metamorphic HEMTs for Sub Millimeter Wave Applications 亚毫米波应用的变质hemt
Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI: 10.1201/9780429460043-14
J. Ajayan, D. Nirmal
{"title":"Metamorphic HEMTs for Sub Millimeter Wave Applications","authors":"J. Ajayan, D. Nirmal","doi":"10.1201/9780429460043-14","DOIUrl":"https://doi.org/10.1201/9780429460043-14","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132885388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HEMT Material Technology and Epitaxial Deposition Techniques HEMT材料技术与外延沉积技术
Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI: 10.1201/9780429460043-3
R. Komaragiri
{"title":"HEMT Material Technology and Epitaxial Deposition Techniques","authors":"R. Komaragiri","doi":"10.1201/9780429460043-3","DOIUrl":"https://doi.org/10.1201/9780429460043-3","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116185176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AlGaN/GaN HEMTs for High Power Applications 用于高功率应用的AlGaN/GaN hemt
Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI: 10.1201/9780429460043-5
P. Prajoon, Anuja Menokey
{"title":"AlGaN/GaN HEMTs for High Power Applications","authors":"P. Prajoon, Anuja Menokey","doi":"10.1201/9780429460043-5","DOIUrl":"https://doi.org/10.1201/9780429460043-5","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"317 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123305356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metal Oxide Semiconductor High Electron Mobility Transistors 金属氧化物半导体高电子迁移率晶体管
Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI: 10.1201/9780429460043-15
D. Panda, G. Amarnath, T. Lenka
{"title":"Metal Oxide Semiconductor High Electron Mobility Transistors","authors":"D. Panda, G. Amarnath, T. Lenka","doi":"10.1201/9780429460043-15","DOIUrl":"https://doi.org/10.1201/9780429460043-15","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128900586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Motivation Behind High Electron Mobility Transistors 高电子迁移率晶体管背后的动机
Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI: 10.1201/9780429460043-1
M. Chakraverty
{"title":"Motivation Behind High Electron Mobility Transistors","authors":"M. Chakraverty","doi":"10.1201/9780429460043-1","DOIUrl":"https://doi.org/10.1201/9780429460043-1","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126573758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信