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A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System

Handbook for III-V High Electron Mobility Transistor Technologies Pub Date : 2019-05-14 DOI:10.1201/9780429460043-13
Roman Garcia-Perez, K. Lozano, Jorge Castillo, H. Huq
{"title":"A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System","authors":"Roman Garcia-Perez, K. Lozano, Jorge Castillo, H. Huq","doi":"10.1201/9780429460043-13","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Handbook for III-V High Electron Mobility Transistor Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1201/9780429460043-13","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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磁控溅射系统对AlGaN/GaN HEMT元素和表面表征的研究
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Handbook for III-V High Electron Mobility Transistor Technologies
Handbook for III-V High Electron Mobility Transistor Technologies
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