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2017 IEEE CPMT Symposium Japan (ICSJ)最新文献

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New design concept of thermal conductive sheet showing low total thermal resistance 新设计理念的导热板显示低总热阻
2017 IEEE CPMT Symposium Japan (ICSJ) Pub Date : 2017-11-01 DOI: 10.1109/ICSJ.2017.8240101
Masao Tomikawa, Yoichi Shimba Akira Shimada
{"title":"New design concept of thermal conductive sheet showing low total thermal resistance","authors":"Masao Tomikawa, Yoichi Shimba Akira Shimada","doi":"10.1109/ICSJ.2017.8240101","DOIUrl":"https://doi.org/10.1109/ICSJ.2017.8240101","url":null,"abstract":"High thermal conductive adhesive is important to cool power devices. Recently thermal conductivity reaches more than 10W/mK by efficient addition of thermal conductive filler. However, high loading of filler makes the thermal conductive sheet poor adhesion. Furthermore, we focused on reducing an interfacial heat resistance between high thermal conductive sheet composed of resin and heat conductive filler and metal such as Cu or Al. The interfacial heat resistance was determined by dispersion of high heat conductive filler and interfacial residual stress. The good dispersed sheet shows lower interfacial resistance than poor dispersed sheet, The interfacial residual stress causes an poor contact to metal to make void in the interface. To consider the effect of those facts, we successfully developed the high thermal conductive sheet with extremely low interfacial resistance. The interface heat resistance is below 0.01W/C.","PeriodicalId":225668,"journal":{"name":"2017 IEEE CPMT Symposium Japan (ICSJ)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114479040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of newly bump support film (BSF) for WLCSP 新型WLCSP凹凸支撑膜的研制
2017 IEEE CPMT Symposium Japan (ICSJ) Pub Date : 2017-11-01 DOI: 10.1109/ICSJ.2017.8240100
Akinori Sato, Sayaka Bando, Tomotaka Morishita, Keisuke Shinomiya, Masanori Yamagishi, S. Takyu
{"title":"Development of newly bump support film (BSF) for WLCSP","authors":"Akinori Sato, Sayaka Bando, Tomotaka Morishita, Keisuke Shinomiya, Masanori Yamagishi, S. Takyu","doi":"10.1109/ICSJ.2017.8240100","DOIUrl":"https://doi.org/10.1109/ICSJ.2017.8240100","url":null,"abstract":"Solder joint crack is increasing with increasing of warpage caused by larger Wafer Level Chip Size Package (WLCSP). Bump Support Film (BSF) were proposed as a protect material for preventing a solder joint crack of bumps. The BSF was constructed of a back grind tape and Bump Support Layer (BSL) which was composed of thermosetting epoxy resin. One of the key points of forming the BSL on a wafer which have bumps on circuit surface is to remove organic residues of BSL on the bump top for keeping a good electric connection. In this study, we selected a plasma cleaning process as a removal method of the slightly amount of BSL residue on the bump top. We succeeded to optimize a plasma condition for a good electric connection, and quantify the removal amount of BSL residue by XPS analysis.","PeriodicalId":225668,"journal":{"name":"2017 IEEE CPMT Symposium Japan (ICSJ)","volume":"2009 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129046756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heterogeneous and multi-level integration on mature 25Gb/s silicon photonic platform 在成熟的25Gb/s硅光子平台上异构多级集成
2017 IEEE CPMT Symposium Japan (ICSJ) Pub Date : 2017-11-01 DOI: 10.1109/ICSJ.2017.8240122
S. Malhouitre, B. Szelag, S. Brision, Q. Wilmart, D. Fowler, C. Dupré, C. Kopp
{"title":"Heterogeneous and multi-level integration on mature 25Gb/s silicon photonic platform","authors":"S. Malhouitre, B. Szelag, S. Brision, Q. Wilmart, D. Fowler, C. Dupré, C. Kopp","doi":"10.1109/ICSJ.2017.8240122","DOIUrl":"https://doi.org/10.1109/ICSJ.2017.8240122","url":null,"abstract":"A Full 25GB/S silicon photonics platform is described in this paper, and new technological challenges that aim to improve this platform, such as multiple silicon levels, silicon nitride levels, edge coupling processing or integration of heterogeneous materials to enable tunable integrated lasers, are discussed.","PeriodicalId":225668,"journal":{"name":"2017 IEEE CPMT Symposium Japan (ICSJ)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124108194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Micro-bump challenges and reliability improvements in stack-die packages 堆栈芯片封装中的微碰撞挑战和可靠性改进
2017 IEEE CPMT Symposium Japan (ICSJ) Pub Date : 2017-11-01 DOI: 10.1109/ICSJ.2017.8240084
Yi-Ting Henry Chen, R. Chaware, I. Singh
{"title":"Micro-bump challenges and reliability improvements in stack-die packages","authors":"Yi-Ting Henry Chen, R. Chaware, I. Singh","doi":"10.1109/ICSJ.2017.8240084","DOIUrl":"https://doi.org/10.1109/ICSJ.2017.8240084","url":null,"abstract":"The fact that Sn-Cu reaction rate is much faster than Sn-Ni reaction and releasing much more gibbs free energy causing Sn prefers to have reaction with Cu instead of Ni. Moreover, at the temperature below 170°C, Sn side-wall reaction rate is larger than IMC formation rate at the temperature below 200 °C because the long distance Sn side-wall migration is faster than Cu traveling through to center Sn. This makes Sn in the micro-bump favors to flow to the Cu side-wall to have side-wall reaction during the high temperature (maximum 170 °C) storage process (HTS). This will result in large voids formed at the center of the micro-bump after HTS, causing malfunction of the product. Therefore, detail DOEs needs to be done to evaluate the reaction rate mentioned above in order to design a highly reliable microbump that can last over 3000 hours under HTS test.","PeriodicalId":225668,"journal":{"name":"2017 IEEE CPMT Symposium Japan (ICSJ)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116912505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Miniaturized wideband bandpass filter in IPD technology with passive equalizer to improve the flatness of insertion loss response 带无源均衡器的IPD技术中的小型化宽带带通滤波器提高了插入损耗响应的平坦度
2017 IEEE CPMT Symposium Japan (ICSJ) Pub Date : 2017-11-01 DOI: 10.1109/ICSJ.2017.8240092
Chia-Ching Huang, Wei-Ting Fang, Yo-Shen Lin
{"title":"Miniaturized wideband bandpass filter in IPD technology with passive equalizer to improve the flatness of insertion loss response","authors":"Chia-Ching Huang, Wei-Ting Fang, Yo-Shen Lin","doi":"10.1109/ICSJ.2017.8240092","DOIUrl":"https://doi.org/10.1109/ICSJ.2017.8240092","url":null,"abstract":"In this paper, a wideband bandpass filter (BPF) with very compact circuit size is proposed. Specifically, the circuit size of a 5th-order multi-mode resonator BPF is largely reduced by replacing all transmission line sections with bridged-T coils. The resulted lumped-element BPF can then be implemented using the integrated passive device technology to achieve very compact chip size. To improve also the flatness of inband insertion loss, a passive equalizer is then introduced. The measured in-band insertion loss of proposed BPF is within 2.10±0.2 dB from 4.5 to 12.5 GHz while the measured in-band group delay is within 0.152±0.017 ns. Notably, it features a compact chip size of 1.83 mm × 1.69 mm, which is only 0.052λ0 × 0.048λο at the center frequency fo = 8.5 GHz.","PeriodicalId":225668,"journal":{"name":"2017 IEEE CPMT Symposium Japan (ICSJ)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132843332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A switchable tunable dual-band filter using varator diodes for tuning and switching 一种可切换的可调谐双带滤波器，使用可变二极管进行调谐和切换
2017 IEEE CPMT Symposium Japan (ICSJ) Pub Date : 1900-01-01 DOI: 10.1109/ICSJ.2017.8240082
Po-Jung Chou, C. Hu, Chi-Yang Chang
{"title":"A switchable tunable dual-band filter using varator diodes for tuning and switching","authors":"Po-Jung Chou, C. Hu, Chi-Yang Chang","doi":"10.1109/ICSJ.2017.8240082","DOIUrl":"https://doi.org/10.1109/ICSJ.2017.8240082","url":null,"abstract":"A switchable tunable dual-band filter using varator diodes for band switching and frequency tuning is proposed. The tuning range of first band is from 2.3 to 2.8 GHz and second one is from 1.8 to 2.1 GHz. The proposed dual-band filter is composed of two second-order Chebyshev short-ended hairpin comb filters which embedded a pair of the varators as a switching and tuning elements. The simulated and measured results are matched well.","PeriodicalId":225668,"journal":{"name":"2017 IEEE CPMT Symposium Japan (ICSJ)","volume":"56 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132287021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High reliable doherty power amplifier module for LTE small cell base station 用于LTE小型蜂窝基站的高可靠多赫蒂功率放大模块
2017 IEEE CPMT Symposium Japan (ICSJ) Pub Date : 1900-01-01 DOI: 10.1109/ICSJ.2017.8240083
Yu-Cheng Hsu, Jian-Yu Li, Lin-Kun Wu
{"title":"High reliable doherty power amplifier module for LTE small cell base station","authors":"Yu-Cheng Hsu, Jian-Yu Li, Lin-Kun Wu","doi":"10.1109/ICSJ.2017.8240083","DOIUrl":"https://doi.org/10.1109/ICSJ.2017.8240083","url":null,"abstract":"The small-cell base station requires a high linearity, high reliable and high efficiency power amplifier to enhance signal strength in a coverage region. To meet the demand, the 2.6 GHz two-way symmetrical Doherty power amplifier module which uses modularized components, enhances system stability and integrates with heat sink is proposed. The experimental results show that the proposed module delivers a power-added efficiency of 27%, a gain of 47 dB, and adjacent channel leakage ratio of below −33 dBc at an average power of 40 dBm without non-linearity compensation for the LTE signal. Finally, the model of AM-AM and AM-PM with memory effects are predicted by measurement results and it can be used to improve the linearity of the proposed power amplifier.","PeriodicalId":225668,"journal":{"name":"2017 IEEE CPMT Symposium Japan (ICSJ)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129720147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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