发布求助
文献互助 智能选刊 最新文献

Advanced Materials for Optics and Electronics最新文献

筛选
英文 中文
Metal amides: versatile dopant precursors for electronic materials 金属酰胺:电子材料的多功能掺杂前体
Advanced Materials for Optics and Electronics Pub Date : 2000-05-01 DOI: 10.1002/1099-0712(200005/10)10:3/5<213::AID-AMO419>3.0.CO;2-#
O. Just, W. S. Rees
{"title":"Metal amides: versatile dopant precursors for electronic materials","authors":"O. Just, W. S. Rees","doi":"10.1002/1099-0712(200005/10)10:3/5<213::AID-AMO419>3.0.CO;2-#","DOIUrl":"https://doi.org/10.1002/1099-0712(200005/10)10:3/5<213::AID-AMO419>3.0.CO;2-#","url":null,"abstract":"","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114725680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS‐CVD) of tantalum pentoxide 紫外辅助注射液源化学气相沉积(UVILS - CVD)的研究
Advanced Materials for Optics and Electronics Pub Date : 2000-05-01 DOI: 10.1002/1099-0712(200005/10)10:3/5<115::AID-AMO418>3.0.CO;2-#
P. Kelly, M. Mooney, J. T. Beechinor, B. O’Sullivan, P. Hurley, G. Crean, J. Zhang, I. Boyd, M. Paillous, C. Jiménez, J. Sénateur
{"title":"Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS‐CVD) of tantalum pentoxide","authors":"P. Kelly, M. Mooney, J. T. Beechinor, B. O’Sullivan, P. Hurley, G. Crean, J. Zhang, I. Boyd, M. Paillous, C. Jiménez, J. Sénateur","doi":"10.1002/1099-0712(200005/10)10:3/5<115::AID-AMO418>3.0.CO;2-#","DOIUrl":"https://doi.org/10.1002/1099-0712(200005/10)10:3/5<115::AID-AMO418>3.0.CO;2-#","url":null,"abstract":"Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) emerged during 1999 as a new low-temperature dielectric deposition system combining earlier developments in injection liquid source CVD and excimer lamp assisted CVD. While the UVILS-CVD technique is still at an early stage of development, the reported results in the literature indicate that UVILS-CVD is a promising technique for the controlled deposition of ultra-thin high-k metal-oxide dielectrics for deep sub-micron CMOS devices at temperatures as low as 350 °C. As-deposited UVILS-CVD tantalum pentoxide dielectrics have been reported with refractive index values in the range 2.02 – 2.16, conventional capacitance – voltage characteristics, dielectric constants in the range 18 – 24, fixed oxide charge content of less than 5×1010 cm−1 and breakdown fields higher than 2 MV·cm−1. Annealing reduces the leakage currents by several orders of magnitude. The main characteristics of the UVILS-CVD technique reported to date in the literature are reviewed. Copyright © 2000 John Wiley & Sons, Ltd.","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"2 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134290520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Recent developments in the MOCVD of electronic materials 电子材料MOCVD的最新进展
Advanced Materials for Optics and Electronics Pub Date : 2000-05-01 DOI: 10.1002/1099-0712(200005/10)10:3/5<91::AID-AMO421>3.0.CO;2-#
A. C. Jones
{"title":"Recent developments in the MOCVD of electronic materials","authors":"A. C. Jones","doi":"10.1002/1099-0712(200005/10)10:3/5<91::AID-AMO421>3.0.CO;2-#","DOIUrl":"https://doi.org/10.1002/1099-0712(200005/10)10:3/5<91::AID-AMO421>3.0.CO;2-#","url":null,"abstract":"","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132658431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
On the thermal behaviour and thermo-oxidative stability of liquid crystalline triphenylene compounds 液晶三苯基化合物的热行为和热氧化稳定性
Advanced Materials for Optics and Electronics Pub Date : 1999-03-01 DOI: 10.1002/(SICI)1099-0712(199903/04)9:2<55::AID-AMO366>3.0.CO;2-#
B. Schartel, A. Kettner, R. Kunze, J. Wendorff, M. Hennecke
{"title":"On the thermal behaviour and thermo-oxidative stability of liquid crystalline triphenylene compounds","authors":"B. Schartel, A. Kettner, R. Kunze, J. Wendorff, M. Hennecke","doi":"10.1002/(SICI)1099-0712(199903/04)9:2<55::AID-AMO366>3.0.CO;2-#","DOIUrl":"https://doi.org/10.1002/(SICI)1099-0712(199903/04)9:2<55::AID-AMO366>3.0.CO;2-#","url":null,"abstract":"Columnar discotic materials are considered for applications in the area of photoconductivity and light-emitting diodes. A major requirement is their stability at elevated temperatures and in the presence of oxygen. The thermal and thermo-oxidative behaviour of discotic triphenylene derivatives was investigated by us using various methods, in particular by chemiluminescence (CL), UV-vis absorption spectroscopy and in situ thermogravimetry–mass spectroscopy (TG–MS). Various degradation processes are described for increasing temperature, and their influences on functional properties are discussed. Copyright © 1999 John Wiley & Sons, Ltd.","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125621415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Influence of polyaniline on electrode materials 聚苯胺对电极材料的影响
Advanced Materials for Optics and Electronics Pub Date : 1998-11-01 DOI: 10.1002/(SICI)1099-0712(199811/12)8:6<303::AID-AMO358>3.0.CO;2-#
E. Frąckowiak, K. Jurewicz
{"title":"Influence of polyaniline on electrode materials","authors":"E. Frąckowiak, K. Jurewicz","doi":"10.1002/(SICI)1099-0712(199811/12)8:6<303::AID-AMO358>3.0.CO;2-#","DOIUrl":"https://doi.org/10.1002/(SICI)1099-0712(199811/12)8:6<303::AID-AMO358>3.0.CO;2-#","url":null,"abstract":"Polyaniline (PANI) has been used for modification of the electrochemical behaviour of a carbon fluoride ((CFx)n) cathode in a lithium cell. PANI and (CFx)n powders were carefully mixed and the electrochemical properties and kinetic parameters of the composite (CFx)n–PANI cathode were evaluated by galvanostatic and potentiodynamic techniques. An increase in exchange current has been found for electrodes with addition of polyaniline in the form of emeraldine base (EB). During the reduction process of carbon fluoride using 1 M lithium perchlorate solution in organic solvent, the ternary intercalation compound CLixF is formed and then irreversibly decomposed into carbon and lithium fluoride. The insertion of lithium cations into the (CFx)n layered structure is diffusionally controlled, hence improvement in electronic properties of this fluoride material by the presence of conducting PANI chains and enhancement of discharge performance were found for 25% addition of PANI. Copyright © 1998 John Wiley & Sons, Ltd.","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124184328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical spectra of C60 and C70 complexes: their similarities and differences C60和C70配合物的光谱:异同
Advanced Materials for Optics and Electronics Pub Date : 1998-09-01 DOI: 10.1002/(SICI)1099-0712(1998090)8:5<215::AID-AMO338>3.0.CO;2-#
A. Graja, J. Farges
{"title":"Optical spectra of C60 and C70 complexes: their similarities and differences","authors":"A. Graja, J. Farges","doi":"10.1002/(SICI)1099-0712(1998090)8:5<215::AID-AMO338>3.0.CO;2-#","DOIUrl":"https://doi.org/10.1002/(SICI)1099-0712(1998090)8:5<215::AID-AMO338>3.0.CO;2-#","url":null,"abstract":"","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116160862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Stoichiometric deviations along an ingot of CuGaSe2 CuGaSe2铸锭的化学计量偏差
Advanced Materials for Optics and Electronics Pub Date : 1998-05-01 DOI: 10.1002/(SICI)1099-0712(199805/06)8:3<147::AID-AMO344>3.0.CO;2-#
T. Martı́n, J. Merino, J. L. M. Vidales, M. León, F. Rueda, R. Díaz
{"title":"Stoichiometric deviations along an ingot of CuGaSe2","authors":"T. Martı́n, J. Merino, J. L. M. Vidales, M. León, F. Rueda, R. Díaz","doi":"10.1002/(SICI)1099-0712(199805/06)8:3<147::AID-AMO344>3.0.CO;2-#","DOIUrl":"https://doi.org/10.1002/(SICI)1099-0712(199805/06)8:3<147::AID-AMO344>3.0.CO;2-#","url":null,"abstract":"The dependence of the structural parameters on compositional deviations of CuGaSe2 has been studied. These deviations have been induced along an ingot by a single fusion of the components at 1150 °C and subsequent slow cooling in a stationary ampoule in a vertical furnace. All along the sample a single chalcopyrite phase is present and a compositional gradient along the ingot was found by energy-dispersive analysis of X-rays (EDAX) measurements, the upper part being rich in Ga (series B) and the lower part in Cu (series A), with Cu/Ga ratios of 0·95 and 1·1 respectively. A hypothesis of the existence of two phases in the melt is proposed to explain these facts. The unit cell parameters, anion displacement and Cu and Ga occupation numbers in their sublattices were analysed by X-ray powder diffraction and Rietveld refinement methods. In series A the occupation numbers are near stoichiometry, while in series B a Cu defect appears. In both series, changes in unit cell parameter are related to changes in Cu content, suggesting the presence of a fraction of Cu ions either as interstitials or at Ga sites when Cu is in excess, or of Cu vacancies in its sublattice when there is a Cu deficiency. © 1998 John Wiley & Sons, Ltd.","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115811234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Molecular image‐processing devices based on chemical reaction systems. 6: Processing half‐tone images and neural network architecture of excitable media 基于化学反应系统的分子图像处理装置。6:半色调图像处理及可兴奋介质的神经网络架构
Advanced Materials for Optics and Electronics Pub Date : 1997-07-01 DOI: 10.1002/(SICI)1099-0712(199707)7:4<171::AID-AMO300>3.0.CO;2-#
N. Rambidi, A. V. Maximychev
{"title":"Molecular image‐processing devices based on chemical reaction systems. 6: Processing half‐tone images and neural network architecture of excitable media","authors":"N. Rambidi, A. V. Maximychev","doi":"10.1002/(SICI)1099-0712(199707)7:4<171::AID-AMO300>3.0.CO;2-#","DOIUrl":"https://doi.org/10.1002/(SICI)1099-0712(199707)7:4<171::AID-AMO300>3.0.CO;2-#","url":null,"abstract":"","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126385405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Optical Constants of Polycrystalline Cd1xZnxTe Thin Films by Spectroscopic Ellipsometry 多晶Cd1xZnxTe薄膜的椭偏光谱光学常数
Advanced Materials for Optics and Electronics Pub Date : 1997-05-01 DOI: 10.1002/(SICI)1099-0712(199705)7:3<109::AID-AMO296>3.3.CO;2-W
K. Rao, O. Hussain, B. Naidu, P. Reddy
{"title":"Optical Constants of Polycrystalline Cd1xZnxTe Thin Films by Spectroscopic Ellipsometry","authors":"K. Rao, O. Hussain, B. Naidu, P. Reddy","doi":"10.1002/(SICI)1099-0712(199705)7:3<109::AID-AMO296>3.3.CO;2-W","DOIUrl":"https://doi.org/10.1002/(SICI)1099-0712(199705)7:3<109::AID-AMO296>3.3.CO;2-W","url":null,"abstract":"","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134412553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Red shift in optical absorption of erbium and dysprosium diphthalocyanine thin films on exposure to chlorine 二酞菁铒和镝薄膜暴露于氯时光学吸收的红移
Advanced Materials for Optics and Electronics Pub Date : 1996-07-01 DOI: 10.1002/(SICI)1099-0712(199607)6:4<203::AID-AMO241>3.0.CO;2-#
A. Krier, T. Parr, K. Davidson, R. A. Collins
{"title":"Red shift in optical absorption of erbium and dysprosium diphthalocyanine thin films on exposure to chlorine","authors":"A. Krier, T. Parr, K. Davidson, R. A. Collins","doi":"10.1002/(SICI)1099-0712(199607)6:4<203::AID-AMO241>3.0.CO;2-#","DOIUrl":"https://doi.org/10.1002/(SICI)1099-0712(199607)6:4<203::AID-AMO241>3.0.CO;2-#","url":null,"abstract":"","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125782142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信