紫外辅助注射液源化学气相沉积(UVILS - CVD)的研究

P. Kelly, M. Mooney, J. T. Beechinor, B. O’Sullivan, P. Hurley, G. Crean, J. Zhang, I. Boyd, M. Paillous, C. Jiménez, J. Sénateur
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引用次数: 5

摘要

紫外辅助注入液源化学气相沉积(UVILS-CVD)是一种结合了注入液源化学气相沉积和准分子灯辅助化学气相沉积的新型低温介质沉积系统,于1999年兴起。虽然UVILS-CVD技术仍处于早期发展阶段,但文献报道的结果表明,UVILS-CVD是一种很有前途的技术,可以在低至350°C的温度下控制沉积用于深亚微米CMOS器件的超薄高k金属氧化物介电体。据报道,沉积的UVILS-CVD五氧化二钽电介质折射率在2.02 ~ 2.16之间,具有常规的电容-电压特性,介电常数在18 ~ 24之间,固定氧化物电荷含量小于5×1010 cm−1,击穿场高于2 MV·cm−1。退火使漏电流降低了几个数量级。综述了迄今为止文献报道的UVILS-CVD技术的主要特点。版权所有©2000约翰威利父子有限公司
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS‐CVD) of tantalum pentoxide
Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) emerged during 1999 as a new low-temperature dielectric deposition system combining earlier developments in injection liquid source CVD and excimer lamp assisted CVD. While the UVILS-CVD technique is still at an early stage of development, the reported results in the literature indicate that UVILS-CVD is a promising technique for the controlled deposition of ultra-thin high-k metal-oxide dielectrics for deep sub-micron CMOS devices at temperatures as low as 350 °C. As-deposited UVILS-CVD tantalum pentoxide dielectrics have been reported with refractive index values in the range 2.02 – 2.16, conventional capacitance – voltage characteristics, dielectric constants in the range 18 – 24, fixed oxide charge content of less than 5×1010 cm−1 and breakdown fields higher than 2 MV·cm−1. Annealing reduces the leakage currents by several orders of magnitude. The main characteristics of the UVILS-CVD technique reported to date in the literature are reviewed. Copyright © 2000 John Wiley & Sons, Ltd.
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