P. Kelly, M. Mooney, J. T. Beechinor, B. O’Sullivan, P. Hurley, G. Crean, J. Zhang, I. Boyd, M. Paillous, C. Jiménez, J. Sénateur
{"title":"紫外辅助注射液源化学气相沉积(UVILS - CVD)的研究","authors":"P. Kelly, M. Mooney, J. T. Beechinor, B. O’Sullivan, P. Hurley, G. Crean, J. Zhang, I. Boyd, M. Paillous, C. Jiménez, J. Sénateur","doi":"10.1002/1099-0712(200005/10)10:3/5<115::AID-AMO418>3.0.CO;2-#","DOIUrl":null,"url":null,"abstract":"Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) emerged during 1999 as a new low-temperature dielectric deposition system combining earlier developments in injection liquid source CVD and excimer lamp assisted CVD. While the UVILS-CVD technique is still at an early stage of development, the reported results in the literature indicate that UVILS-CVD is a promising technique for the controlled deposition of ultra-thin high-k metal-oxide dielectrics for deep sub-micron CMOS devices at temperatures as low as 350 °C. As-deposited UVILS-CVD tantalum pentoxide dielectrics have been reported with refractive index values in the range 2.02 – 2.16, conventional capacitance – voltage characteristics, dielectric constants in the range 18 – 24, fixed oxide charge content of less than 5×1010 cm−1 and breakdown fields higher than 2 MV·cm−1. Annealing reduces the leakage currents by several orders of magnitude. The main characteristics of the UVILS-CVD technique reported to date in the literature are reviewed. Copyright © 2000 John Wiley & Sons, Ltd.","PeriodicalId":222477,"journal":{"name":"Advanced Materials for Optics and Electronics","volume":"2 7","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS‐CVD) of tantalum pentoxide\",\"authors\":\"P. Kelly, M. Mooney, J. T. Beechinor, B. O’Sullivan, P. Hurley, G. Crean, J. Zhang, I. Boyd, M. Paillous, C. Jiménez, J. Sénateur\",\"doi\":\"10.1002/1099-0712(200005/10)10:3/5<115::AID-AMO418>3.0.CO;2-#\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) emerged during 1999 as a new low-temperature dielectric deposition system combining earlier developments in injection liquid source CVD and excimer lamp assisted CVD. While the UVILS-CVD technique is still at an early stage of development, the reported results in the literature indicate that UVILS-CVD is a promising technique for the controlled deposition of ultra-thin high-k metal-oxide dielectrics for deep sub-micron CMOS devices at temperatures as low as 350 °C. As-deposited UVILS-CVD tantalum pentoxide dielectrics have been reported with refractive index values in the range 2.02 – 2.16, conventional capacitance – voltage characteristics, dielectric constants in the range 18 – 24, fixed oxide charge content of less than 5×1010 cm−1 and breakdown fields higher than 2 MV·cm−1. Annealing reduces the leakage currents by several orders of magnitude. The main characteristics of the UVILS-CVD technique reported to date in the literature are reviewed. Copyright © 2000 John Wiley & Sons, Ltd.\",\"PeriodicalId\":222477,\"journal\":{\"name\":\"Advanced Materials for Optics and Electronics\",\"volume\":\"2 7\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials for Optics and Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/1099-0712(200005/10)10:3/5<115::AID-AMO418>3.0.CO;2-#\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials for Optics and Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/1099-0712(200005/10)10:3/5<115::AID-AMO418>3.0.CO;2-#","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5