1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395)最新文献

Effect of low temperature deuterium annealing on plasma process induced damage 低温氘退火对等离子体过程损伤的影响

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Pub Date : 1999-12-01 DOI: 10.1109/PPID.1999.798845

S.H. Lee, Y. Kim, Y. Lee, H. Kang, C. Ahn, B. Kang, Jinju Lee, K. Cheng, Zhi Chen, K. Hess, J. Lyding

引用次数: 0

Fast hot-carrier aging method of charging damage measurement 快速热载流子老化充电损伤测量方法

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Pub Date : 1999-05-09 DOI: 10.1109/PPID.1999.798850

K.P. Cheung, E. J. Lloyd

{"title":"Fast hot-carrier aging method of charging damage measurement","authors":"K.P. Cheung, E. J. Lloyd","doi":"10.1109/PPID.1999.798850","DOIUrl":"https://doi.org/10.1109/PPID.1999.798850","url":null,"abstract":"To monitor plasma-charging damage, it is well known that one must not overlook the latent defects that are created by the damage but are not readily observable by most commonly used measurement methods. These latent defects are either passivated defects due to temperature cycling after the defects are created, or simply due to charge detrapping that render the defects invisible to many measurements. The common way to reveal these latent defects is to look for accelerated degradation of device parameters under electrical stress. A common stressing method is uniform Fowler-Nordheim tunneling through the gate-oxide. A less often used method is channel hot-carrier stress (Hook et al., Proc. P2ID96, p. 164, 1996). In this paper, we have demonstrated the suitability of using very short hot-carrier stress time to monitor plasma charging damage without the use of a very high acceleration voltage. When the stress is long enough to extract the lifetime from a large number of devices, the method allows us to find the intrinsic (damage free) lifetime of a particular transistor design. This ability to determine how much the devices are degraded quantitatively without the help of a reference device is unique among plasma-charging damage measurement methods.","PeriodicalId":217410,"journal":{"name":"1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395)","volume":"120 15","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120851384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Suppression of topography dependent charging using a phase-controlled pulsed inductively coupled plasma 利用相位控制脉冲电感耦合等离子体抑制地形相关电荷

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Pub Date : 1999-05-09 DOI: 10.1109/PPID.1999.798837

K. Shin, W. Park, Ji-Soo Kim, C. Kang, T. Ahn, J. Moon, Moonyong Lee

引用次数: 2

Effect of plasma density and uniformity, electron temperature, process gas, and chamber on electron shading damage 等离子体密度和均匀性、电子温度、工艺气体和腔室对电子遮蔽损伤的影响

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Pub Date : 1999-05-09 DOI: 10.1109/PPID.1999.798800

S. Siu, R. Patrick, V. Vahedi, S. Alba, G. Valentini, P. Colombo

{"title":"Effect of plasma density and uniformity, electron temperature, process gas, and chamber on electron shading damage","authors":"S. Siu, R. Patrick, V. Vahedi, S. Alba, G. Valentini, P. Colombo","doi":"10.1109/PPID.1999.798800","DOIUrl":"https://doi.org/10.1109/PPID.1999.798800","url":null,"abstract":"Electron shading is a major plasma process-induced device damage mechanism in high-density etching. Patrick et al (1997) showed that although gross plasma nonuniformity can cause damage, nonuniformities seen in modern commercial etchers contribute negligible damage. Vahedi et al. (1997) derived an analytic model that clarifies the contribution of plasma and device parameters to topography induced charging. Electron temperature and plasma density are the major damage parameters for plasma. Modeling and preliminary shading coefficient measurements show that plasma nonuniformity is indeed only a small contribution. Other major factors in plasma processing induced damage relate to the device, and are the gate oxide activation electric field, effective mass constant, and gate oxide thickness. Finally, topography dependent shading parameters need to be considered. These are a function of minimum line width, aspect ratio, and antenna ratio. Protection diodes and transient fuses (Krishnan et al., 1998) may help mitigate shading damage effects, but do not change the charging mechanism, namely electron shading. This work examines the role of plasma parameters on V/sub th/ shifts in transistors fabricated in a flash memory process where metal 1 and/or metal 2 were etched in either a Lam TCP/sup TM/ 9600SE or Lam TCP/sup TM/ 9600PTX chamber. The plasma parameters varied were plasma density, electron temperature, and plasma uniformity. The role of chamber gap height in the 9600SE was examined and the results compared to the those in the 9600PTX. The role of a lighter ion in decreasing damage as suggested by Tabara (1998) was also examined.","PeriodicalId":217410,"journal":{"name":"1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121841891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Plasma induced damage from HDP process on the ultra-thin gate oxide HDP工艺对超薄栅极氧化物的等离子损伤

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Pub Date : 1999-05-09 DOI: 10.1109/PPID.1999.798807

Shoumian Chen, J. Sudijono, C. Perera, Ying Jin, F. Susilo, Xu Zeng, A.V. Kumar, J. Wen

引用次数: 5

Damascene copper integration 大马士革铜集成

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Pub Date : 1999-05-09 DOI: 10.1109/PPID.1999.798841

A. Stamper, J. Heidenreich, D.C. Hubanks, S. Luce, T. McDevitt

引用次数: 3

Evaluation and reduction of electron shading damage in high temperature etching 高温蚀刻中电子遮阳损伤的评价与降低

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Pub Date : 1999-05-09 DOI: 10.1109/PPID.1999.798801

K. Nojiri, K. Kato, H. Kawakami

引用次数: 3

Charging protection and degradation by antenna environment on NMOS and PMOS transistors NMOS和PMOS晶体管的充电保护及天线环境退化

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Pub Date : 1999-05-09 DOI: 10.1109/PPID.1999.798844

J. Carrere, D.R. Heslinga

引用次数: 4

Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damage 快速热氮化ONO内插介质电阻对等离子体过程损伤的评估

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Pub Date : 1999-05-09 DOI: 10.1109/PPID.1999.798806

C. Cha, E. Chor, H. Gong, A. Q. Zhang, Z. Dong, L. Chan

引用次数: 0

Dependence of plasma damage on density and T/sub e/ in a decoupled plasma source metal etcher 去耦等离子体源金属蚀刻器中等离子体损伤与密度和T/sub / e/的关系

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Pub Date : 1999-05-09 DOI: 10.1109/PPID.1999.798849

S. Downey, M. V. Malyshev, V. M. Donnelly, J. Colonell, N. Layadi, J. Yamartino, A. Paterson, H. Chen, P. Loewenhardt, D. Bohman, N. Singh

{"title":"Dependence of plasma damage on density and T/sub e/ in a decoupled plasma source metal etcher","authors":"S. Downey, M. V. Malyshev, V. M. Donnelly, J. Colonell, N. Layadi, J. Yamartino, A. Paterson, H. Chen, P. Loewenhardt, D. Bohman, N. Singh","doi":"10.1109/PPID.1999.798849","DOIUrl":"https://doi.org/10.1109/PPID.1999.798849","url":null,"abstract":"Plasma induced damage due to metal etch is a well established and well studied problem. Work by several groups has shown that the primary mechanism is electron shading, and that current injection through the gate oxide occurs during the period when open areas in the pattern have cleared but dense areas have not, leading to latent antenna effects (Krishnan et al., 1995; Kinoshita et al., 1997; Krishnan et al., 1997). It has also been shown that damage is generally more severe in high power processes, correlating generally with higher plasma density (Colonell et al., 1997; Tabara, 1996). This observation is easily explained by more available current, if the plasma can be viewed as a current limited source. Plasma damage in general is expected to become more severe with increasing electron temperature, but this effect is less well explored, due partly to the difficulty of measuring T/sub e/. In this paper, we examine the dependence of plasma damage on pressure during the overetch. Measurements of plasma density and T/sub e/ show that reduced damage at higher pressures correlates with a drop in both density and T/sub e/; applying a simple circuit model to the data suggests that decreased T/sub e/ is the primary driver.","PeriodicalId":217410,"journal":{"name":"1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133266477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0