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Silicon lenses with HDPE anti-reflection coatings for low THz frequency range 低太赫兹频率范围内HDPE抗反射涂层的硅透镜
Semiconductor physics, quantum electronics and optoelectronics Pub Date : 2023-03-24 DOI: 10.15407/spqeo26.01.059
A. Shevchik-Shekera, F. Sizov, O. Golenkov, I. Lysiuk, V.О. Petriakov, Mykola Kovbasa
{"title":"Silicon lenses with HDPE anti-reflection coatings for low THz frequency range","authors":"A. Shevchik-Shekera, F. Sizov, O. Golenkov, I. Lysiuk, V.О. Petriakov, Mykola Kovbasa","doi":"10.15407/spqeo26.01.059","DOIUrl":"https://doi.org/10.15407/spqeo26.01.059","url":null,"abstract":"Presented in this paper have been the design, fabrication, and testing of the high resistance floating-zone silicon (HRFZ-Si) optics with the anti-reflection (AR) high-density polyethylene (HDPE) coatings, for the low part of terahertz (THz) frequency range (ν ≈ 0.14 THz), by using the precision press molding. Experimental results of the transmission of the wafers and lenses with double-sided anti-reflection HDPE coatings for radiation frequency 0.14 THz showed an increase in the transmittance T values up to ≈1.45 times as compared to T magnitudes in wafers and lenses without HDPE coatings. The capability to use terahertz lenses with HDPE interference films and the technology of press molding, as a cheaper alternative to the horn antenna applications for the terahertz range of 0.14 THz was shown. With advancements in THz imaging and 6G communication technologies, further implementation of these Si optical elements is possible.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"45 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73350868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of the surface plasmon resonance phenomenon to controlling suspensions 表面等离子体共振现象在控制悬浮液中的应用
Semiconductor physics, quantum electronics and optoelectronics Pub Date : 2023-03-24 DOI: 10.15407/spqeo26.01.084
A. Fedorenko, N. Kachur, H. Dorozinska, G. Dorozinsky, V.P. Maslo, O. Sulima, T. Rudyk
{"title":"Application of the surface plasmon resonance phenomenon to controlling suspensions","authors":"A. Fedorenko, N. Kachur, H. Dorozinska, G. Dorozinsky, V.P. Maslo, O. Sulima, T. Rudyk","doi":"10.15407/spqeo26.01.084","DOIUrl":"https://doi.org/10.15407/spqeo26.01.084","url":null,"abstract":"Represented in this paper are the results of investigations aimed at checking up the capabilities of devices based on the surface plasmon resonance (SPR) phenomenon to be applied for studying the properties of water suspensions. As an example, the authors used here the suspensions of tooth pastes Sensodyne and Colgate in distilled water. For measurements, we used the SPR device Plasmon-71 operating in the near infrared spectral range. Results of these measurements were compared to those obtained using the spectrophotometric ones. The measured values of the sedimentation velocity obtained using both the applied methods confirmed availability to efficiently apply SPR devices for studying the opaque multi-component suspensions.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73984879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamics of temperature dependence of the dielectric properties of a nanocomposite material based on linear polyethylene in the vicinity of the percolation transition 线性聚乙烯纳米复合材料介电性能在渗透转变附近的温度依赖动力学
Semiconductor physics, quantum electronics and optoelectronics Pub Date : 2023-03-24 DOI: 10.15407/spqeo26.01.041
O. Kovalchuk, T. Kovalchuk, Y. Garbovskiy, R.F. Svistilnik, D.V. Pushkarov, L. V. Volokh, O.A. Lagoda, I. V. Oleinikova
{"title":"Dynamics of temperature dependence of the dielectric properties of a nanocomposite material based on linear polyethylene in the vicinity of the percolation transition","authors":"O. Kovalchuk, T. Kovalchuk, Y. Garbovskiy, R.F. Svistilnik, D.V. Pushkarov, L. V. Volokh, O.A. Lagoda, I. V. Oleinikova","doi":"10.15407/spqeo26.01.041","DOIUrl":"https://doi.org/10.15407/spqeo26.01.041","url":null,"abstract":"Within the frequency range of 30 to 105 Hz and temperatures of 18 to 80 °C, the dielectric properties of linear low-density polyethylene with impurities of flame retardant (20 wt.%) and multilayer carbon nanotubes (1.5 wt.%) were investigated using the oscilloscopic method. This concentration value of carbon nanotubes slightly exceeds the concentration of nanotubes (1%), at which the percolation transition begins for the dependence of the polymer electrical conductivity on the content of nanotubes. It has been shown that the frequency dependence of electrical conductivity can be approximated by two exponential dependences. It has been found that when the sample is cooled, changes in the values of dielectric permittivity and electrical conductivity do not occur in the same way as when heated. The temperature dependences of conductivity for low (102 Hz) and high (104 Hz) frequencies have been obtained.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79504286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Utilizing machine learning algorithm in predicting the power conversion efficiency limit of a monolithically perovskites/silicon tandem structure 利用机器学习算法预测单片钙钛矿/硅串联结构的功率转换效率极限
Semiconductor physics, quantum electronics and optoelectronics Pub Date : 2023-03-24 DOI: 10.15407/spqeo26.01.114
M. Ganoub, O. Al-Saban, S. Abdellatif, K. Kirah, H. A. Ghali
{"title":"Utilizing machine learning algorithm in predicting the power conversion efficiency limit of a monolithically perovskites/silicon tandem structure","authors":"M. Ganoub, O. Al-Saban, S. Abdellatif, K. Kirah, H. A. Ghali","doi":"10.15407/spqeo26.01.114","DOIUrl":"https://doi.org/10.15407/spqeo26.01.114","url":null,"abstract":"Tandem structures have been introduced to the photovoltaics (PV) market to boost power conversion efficiency (PCE). Single-junction cells’ PCE, either in a homojunction or heterojunction format, are clipped to a theoretical limit associated with the absorbing material bandgap. Scaling up the single-junction cells to a multi-junction tandem structure penetrates such limits. One of the promising tandem structures is the perovskite over silicon topology. Si junction is utilized as a counter bare cell with perovskites layer above, under applying the bandgap engineering aspects. Herein, we adopt BaTiO 3 /CsPbCl 3 /MAPbBr 3 /CH 3 NH 3 PbI 3 /c-Si tandem structure to be investigated. In tandem PVs, various input parameters can be tuned to maximize PCE, leading to a massive increase in the input combinations. Such a vast dataset directly reflects the computational requirements needed to simulate the wide range of combinations and the computational time. In this study, we seed our random-forest machine learning model with the 3×10 6 points’ dataset with our optoelectronic numerical model in SCAPS. The machine learning could estimate the maximum PCE limit of the proposed tandem structure at around 37.8%, which is more than double the bare Si-cell reported by 18%.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"128 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88153348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of energy efficiency index for indoor LED lighting units 室内LED照明装置能效指标的研究
Semiconductor physics, quantum electronics and optoelectronics Pub Date : 2023-03-24 DOI: 10.15407/spqeo26.01.097
A. Gaballah, Alaaeldin A. Abdelmageed, E. El-Moghazy
{"title":"Investigation of energy efficiency index for indoor LED lighting units","authors":"A. Gaballah, Alaaeldin A. Abdelmageed, E. El-Moghazy","doi":"10.15407/spqeo26.01.097","DOIUrl":"https://doi.org/10.15407/spqeo26.01.097","url":null,"abstract":"The energy efficiency index (EEI) is an important factor used as an indicator either for building energy consumption or electronic device performance; it allows one to select effective devices that save energy. This work studies the performance of different types of LED lamps used in indoor lighting, the lamps currently available in the Egyptian market have been tested according to their photometric and electric parameters, namely: luminous flux, power factor, and EEI. Three different brands E, T, and V have been chosen with the nominal powers 9, 12, and 15 W. The results showed that both 9- and 15-Watt lamps have the same EEI values as 0.14, 0.13, and 0.12 for T, V, and E lamps, respectively, whereas 12-Watt lamps have EEI values of 0.16, 0.13, and 0.13 for T, V, and E lamps, respectively. The experimental testing of these lamps revealed that all the lamps have the same EEI class (A+) regardless of the nominal power. The results also revealed a relationship between the power factor and EEI: as the power factor increases, EEI increases, too. The expanded uncertainty in luminous flux has been calculated.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86072608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Scanning probe lithography on Ge(111)-c(2×8) surface Ge(111)-c(2×8)表面扫描探针光刻
Semiconductor physics, quantum electronics and optoelectronics Pub Date : 2022-12-22 DOI: 10.15407/spqeo25.04.379
A. Goriachko
{"title":"Scanning probe lithography on Ge(111)-c(2×8) surface","authors":"A. Goriachko","doi":"10.15407/spqeo25.04.379","DOIUrl":"https://doi.org/10.15407/spqeo25.04.379","url":null,"abstract":"The paper describes nanometer scale lithography on atomically clean Ge(111)-c(2×8) surface performed in the ultra-high vacuum scanning tunneling microscope operating at 300 K. Using a standard Pt80Ir20 probe tip and applying bias voltages between 0.5 and 3 V, the Ge surface could be reliably imaged with atomic resolution without any modification of the sample. However, surface modification in highly localized area under the probe tip was observed at the bias voltages from 4 to 5 V. Such modification could occur in the form of the deposition of the tip material onto the scanned area of the sample, extraction of the sample material or generation of defects in the sample crystalline structure. Possible physical mechanisms of the processes outlined above as well as the strategies to achieve reliable scanning probe nanolithography are discussed.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"45 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85680918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-organized structures induced by external white noise and nanosized levels of their formation in the non-crystalline As-S(Se) semiconductor systems 非晶As-S(Se)半导体系统中外部白噪声诱导的自组织结构及其纳米级形成
Semiconductor physics, quantum electronics and optoelectronics Pub Date : 2022-12-22 DOI: 10.15407/spqeo25.04.402
M. Mar’yan, N. Yurkovych, V. Šebeň
{"title":"Self-organized structures induced by external white noise and nanosized levels of their formation in the non-crystalline As-S(Se) semiconductor systems","authors":"M. Mar’yan, N. Yurkovych, V. Šebeň","doi":"10.15407/spqeo25.04.402","DOIUrl":"https://doi.org/10.15407/spqeo25.04.402","url":null,"abstract":"Discussed in this paper are the singularity and self-organizing effect of instability and randomness under the influence of external white noise on formation of non-crystalline materials. The random nature of the receiving medium together with the disorganizing effect was found to be capable to initiate formation of qualitatively new self-organized structures in non-crystalline solids. Also analyzed in the paper is the effect of a random temperature field applied to the melt during the cooling process in non-crystalline As-S(Se) semiconductor systems. The conditions for a non-crystalline system in a fluctuating external environment to adjust its properties to the average properties of the environment and to correspond to the deterministic case were identified. Furthermore, the conditions for non-additive reaction of the system to a random environment and formation of a new mode of energy conversion in the self-organized structure at the nanoscale level are determined. The spectrum of the structures created in this way is more diverse as compared to the spectrum corresponding to respective deterministic conditions.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"11 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78777661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of post-annealing temperature on optical and surface properties of tellurium doped ZnO nanocrystalline films 后退火温度对碲掺杂ZnO纳米晶薄膜光学和表面性能的影响
Semiconductor physics, quantum electronics and optoelectronics Pub Date : 2022-12-22 DOI: 10.15407/spqeo25.04.398
A.U. Sonawan, B. Sonawane
{"title":"Impact of post-annealing temperature on optical and surface properties of tellurium doped ZnO nanocrystalline films","authors":"A.U. Sonawan, B. Sonawane","doi":"10.15407/spqeo25.04.398","DOIUrl":"https://doi.org/10.15407/spqeo25.04.398","url":null,"abstract":"Investigated in this work is the effect of post-annealing temperature on ZnO nanocrystalline thin films doped with 5 at.% tellurium. The spin coating method was used to deposit films on the microscopic glass substrates. XRD, AFM, and UV-spectro-photometry were used to characterize the films structure, surface roughness and optical properties. The XRD spectra showed that the nanocrystalline films are of monocrystalline nature. AFM has confirmed the nanocrystalline character of tellurium-doped ZnO. The transmission of exposed films has been decreased with the increase of annealing temperature. The average transmission of all the films has been revealed to be higher than 80%. The optical band gap varies slightly with post-annealing temperature.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"292 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87778684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
“Electronic nose”-type chemosensory systems for detection of gaseous poisonous substances 用于检测气态有毒物质的“电子鼻”型化学感觉系统
Semiconductor physics, quantum electronics and optoelectronics Pub Date : 2022-12-22 DOI: 10.15407/spqeo25.04.429
A. V. Mamykin, O. Kukla, A. S. Pavluchenko, Z. Kazantseva, I. Koshets, A. Pud, N. Ogurtsov, Yuriy Noskov, V. Kalchenko
{"title":"“Electronic nose”-type chemosensory systems for detection of gaseous poisonous substances","authors":"A. V. Mamykin, O. Kukla, A. S. Pavluchenko, Z. Kazantseva, I. Koshets, A. Pud, N. Ogurtsov, Yuriy Noskov, V. Kalchenko","doi":"10.15407/spqeo25.04.429","DOIUrl":"https://doi.org/10.15407/spqeo25.04.429","url":null,"abstract":"The work is devoted to a study of the detection sensitivity and selectivity of a series of simulants of gaseous poisonous substances (PS). Two different sensor types were used, namely: 1) a quartz crystal microbalance (QCM), exhibiting a shift of the resonant frequency of quartz plates coated with calixarene thin layers, and 2) chemoresistive electrodes coated with layers of nanocomposites of intrinsically conducting polymers (ICP) changing their conductance under the influence of adsorbed gas molecules. The concentration of the analyzed volatile compounds varied within the range of 10 to 1000 ppm. The detection threshold ranged from 10 to 100 ppm depending on the analyzed substance for both transducer types. The response time was from 10 to 20 s for the QCM sensors and up to 1 minute for the ICP based sensors. The possibility of qualitative identification of poisonous substances in a wide concentration range by means of statistical analysis of the sensor array data is demonstrated.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85293381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermostimulated luminescence and photoluminescence of microcrystalline zinc sulphide ZnS:Cu 微晶硫化锌ZnS:Cu的热激发发光和光致发光
Semiconductor physics, quantum electronics and optoelectronics Pub Date : 2022-12-22 DOI: 10.15407/spqeo25.04.422
S. Kutovyy, О. Stanovyi
{"title":"Thermostimulated luminescence and photoluminescence of microcrystalline zinc sulphide ZnS:Cu","authors":"S. Kutovyy, О. Stanovyi","doi":"10.15407/spqeo25.04.422","DOIUrl":"https://doi.org/10.15407/spqeo25.04.422","url":null,"abstract":"In the work, photoluminescence (PL) and thermoluminescence (TL) spectra of a zinc sulfide phosphor series, namely microcrystalline ZnS:Cu obtained by self-propagating high-temperature synthesis (SHS), were obtained and analyzed. Based on the spectral analysis, the character of the influence of annealing parameters on the intensity of the “blue” (B) and “green” (G) PL bands is established. The behaviors of the PL and TL bands are compared and the TL bands in the blue and green spectral regions are identified. The TL mechanism was assumed to be the specific nature of the centers that cause the B- and G-bands of PL.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81039554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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