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2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

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Improved Carrier Mobility of Poly-Ge Ultrathin Films on Insulator by Solid-Phase Crystallization Combined with a-Si Capping Layers 固相结晶结合a-Si盖层提高绝缘体上多锗超薄膜载流子迁移率
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2021-06-29 DOI: 10.23919/AM-FPD52126.2021.9499185
Ryutaro Hara, Masanori Chiyozono, T. Sadoh
{"title":"Improved Carrier Mobility of Poly-Ge Ultrathin Films on Insulator by Solid-Phase Crystallization Combined with a-Si Capping Layers","authors":"Ryutaro Hara, Masanori Chiyozono, T. Sadoh","doi":"10.23919/AM-FPD52126.2021.9499185","DOIUrl":"https://doi.org/10.23919/AM-FPD52126.2021.9499185","url":null,"abstract":"To improve the carrier mobility of poly-Ge ultrathin films (thickness: ~20 nm) on insulating substrates, a novel solid-phase crystallization (SPC) technique is developed. Carrier mobility of poly-Ge films obtained by conventional SPC of a-Ge films on insulator significantly decreases with decreasing thickness and cannot be measured for ultrathin films (thickness: ~20 nm). This phenomenon is attribute to retardation of SPC due to introduction of air into the surface regions of a-Ge films. To solve this problem, capping of the a-Ge films is examined. Interestingly, by introducing a-Si capping layers, carrier mobility is increased. As a result, high carrier mobility of ~80 cm2/Vs is obtained even for ultrathin films (thickness: ~20 nm). This technique will be useful to realize advanced thin-film devices for next-generation electronics.","PeriodicalId":215213,"journal":{"name":"2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124398144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Inverted ZnCuInS/ZnS-Based Quantum-Dot Light-Emitting Diodes with Substrate Temperature Variation of Sputtered ZnO Film Layer 基于溅射ZnO薄膜层衬底温度变化的反向ZnCuInS/ zns基量子点发光二极管
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2021-06-29 DOI: 10.23919/AM-FPD52126.2021.9499160
M. M. R. Biswas, H. Okada
{"title":"Inverted ZnCuInS/ZnS-Based Quantum-Dot Light-Emitting Diodes with Substrate Temperature Variation of Sputtered ZnO Film Layer","authors":"M. M. R. Biswas, H. Okada","doi":"10.23919/AM-FPD52126.2021.9499160","DOIUrl":"https://doi.org/10.23919/AM-FPD52126.2021.9499160","url":null,"abstract":"Performance of the cadmium (Cd)-free quantum dot light emitting diodes (QLEDs) were investigated using the metallic sputtered ZnO film. Here, a substrate temperature of the ZnO film was changed to improve an electronic properties. Consequently, the maximum current efficiency of 7.91 cd/A, and external quantum efficiency of 4.26% were achieved for the commercially available ZnCuInS/ZnS-based QLEDs at yellow emission.","PeriodicalId":215213,"journal":{"name":"2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116913093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Improvement of Solution-Processed Organic Floating-Gate Transistor Memories via Tuning the Work Function of Gate Electrodes 通过调节栅电极的功函数来改善溶液处理有机浮栅晶体管存储器的性能
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2021-06-29 DOI: 10.23919/AM-FPD52126.2021.9499172
Naoyuki Nishida, Shion Tazuhara, Reitato Hattori, Miho Higashinakaya, T. Nagase, Takashi Kobayashi, H. Naito
{"title":"Performance Improvement of Solution-Processed Organic Floating-Gate Transistor Memories via Tuning the Work Function of Gate Electrodes","authors":"Naoyuki Nishida, Shion Tazuhara, Reitato Hattori, Miho Higashinakaya, T. Nagase, Takashi Kobayashi, H. Naito","doi":"10.23919/AM-FPD52126.2021.9499172","DOIUrl":"https://doi.org/10.23919/AM-FPD52126.2021.9499172","url":null,"abstract":"Top-gate/bottom-contact organic floating-gate transistor memories have been fabricated by solution processes using an ambipolar polymer semiconductor and an organic composite film composed of polymer insulator and soluble pentacene derivative. The solution-processed memory devices with electron injection layers exhibit good n-type transistor behavior and memory characteristics by storing of holes in the organic composite charge storage layer after programming in the dark. It is found that tuning the work function of gate electrodes using the metal oxide layer of Cs2CO3 improves charge retention characteristics.","PeriodicalId":215213,"journal":{"name":"2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129795908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ferroelectric Liquid Crystal Pixels with Extremely Small Pixel Pitch for Holographic Displays 用于全息显示的具有极小像素间距的铁电液晶像素
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2021-06-29 DOI: 10.23919/AM-FPD52126.2021.9499208
S. Aso, K. Aoshima, Ryo Higashida, N. Funabashi, Junichi Shibasaki, T. Ishinabe, Y. Shibata, H. Fujikake, K. Machida
{"title":"Ferroelectric Liquid Crystal Pixels with Extremely Small Pixel Pitch for Holographic Displays","authors":"S. Aso, K. Aoshima, Ryo Higashida, N. Funabashi, Junichi Shibasaki, T. Ishinabe, Y. Shibata, H. Fujikake, K. Machida","doi":"10.23919/AM-FPD52126.2021.9499208","DOIUrl":"https://doi.org/10.23919/AM-FPD52126.2021.9499208","url":null,"abstract":"We developed a ferroelectric liquid crystal pixel array in which pixels were driven by predesigned stacked two-layered electrodes. Each electrode can independently apply a positive and negative voltage to the designated pixels. The individual pixel driving was successfully confirmed for its pixel pitch as small as 1×1 µm. We observed that 1×2 µm rectangular pixels with the liquid crystal (LC) alignment direction parallel to the shorter side of the pixels showed better resolution than the LC alignment direction parallel to the longer side. Besides, we successfully demonstrated reconstructed holographic images using a 10 k×10 k array with 1×1 µm pixels, indicating its significant potential for three-dimensional holographic images with a wide viewing-zone angle.","PeriodicalId":215213,"journal":{"name":"2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129366716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Redundant Pixel Design and External Mura Compensation for LTPS TFT Full Color MicroLED Display LTPS TFT全彩微led显示屏的冗余像素设计与外部Mura补偿
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2021-06-29 DOI: 10.23919/AM-FPD52126.2021.9499163
Kunio Imaizumi, M. Tamaki, Katsumi Aoki, R. Yokoyama, S. Nakamitsu, Hiroaki Ito, K. Yamanoguchi, Masahiko Nishide, Fanny Rahadian, Seiji Matsuda, Erwin Lang, L. Hoeppel
{"title":"Redundant Pixel Design and External Mura Compensation for LTPS TFT Full Color MicroLED Display","authors":"Kunio Imaizumi, M. Tamaki, Katsumi Aoki, R. Yokoyama, S. Nakamitsu, Hiroaki Ito, K. Yamanoguchi, Masahiko Nishide, Fanny Rahadian, Seiji Matsuda, Erwin Lang, L. Hoeppel","doi":"10.23919/AM-FPD52126.2021.9499163","DOIUrl":"https://doi.org/10.23919/AM-FPD52126.2021.9499163","url":null,"abstract":"LTPS TFT full color microLED displays has been developed by incorporating a redundant pixel design to increase the yield of the display, and applying a combination of Current / PWM hybrid driving and external mura compensation, which is effective for improving uniformity.","PeriodicalId":215213,"journal":{"name":"2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124697303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of Lead Halide Perovskite Thin Films by Laser Alternate Deposition: Variation of Physical Properties with Layered Structure 激光交替沉积制备卤化铅钙钛矿薄膜:层状结构下物理性质的变化
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2021-06-29 DOI: 10.23919/AM-FPD52126.2021.9499187
N. Matsuki, Yuki Iida, Koki Kamada, S. Toda, Tomomasa Sato
{"title":"Fabrication of Lead Halide Perovskite Thin Films by Laser Alternate Deposition: Variation of Physical Properties with Layered Structure","authors":"N. Matsuki, Yuki Iida, Koki Kamada, S. Toda, Tomomasa Sato","doi":"10.23919/AM-FPD52126.2021.9499187","DOIUrl":"https://doi.org/10.23919/AM-FPD52126.2021.9499187","url":null,"abstract":"We aim to reveal the correlation between the structure and physical properties of lead halide perovskite thin films fabricated by laser deposition method while artificially controlling the crystal structure. We found that the crystal phase of methylammonium lead iodide perovskite (CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf>, MAPbI<inf>3</inf>) thin films formed by alternating laser deposition of lead iodide (PbI<inf>2</inf>) and methylammonium iodide (CH<inf>3</inf>NH<inf>3</inf>I, MAI) at room temperature depends on the layered structure.","PeriodicalId":215213,"journal":{"name":"2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131272390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-volatile memory using a Ga-Sn-O TFT with a stacked gate insulator film of SiO2 and (Bi,La)4Ti3O12 非易失性存储器采用Ga-Sn-O TFT与SiO2和(Bi,La)4Ti3O12堆叠栅绝缘体膜
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2021-06-29 DOI: 10.23919/AM-FPD52126.2021.9499212
T. Fukui, Koki Nakagawa, M. Kimura
{"title":"Non-volatile memory using a Ga-Sn-O TFT with a stacked gate insulator film of SiO2 and (Bi,La)4Ti3O12","authors":"T. Fukui, Koki Nakagawa, M. Kimura","doi":"10.23919/AM-FPD52126.2021.9499212","DOIUrl":"https://doi.org/10.23919/AM-FPD52126.2021.9499212","url":null,"abstract":"We fabricated a non-volatile memory using a Ga-Sn-O (GTO) TFT with a stacked gate insulator film of SiO2 and ferroelectric (Bi,La)4Ti3O12 (BLT). In this study, first, to decrease the leakage current and to obtain TFT characteristics, the annealing for the BLT was performed at three different temperature. Second, the post-annealing conditions of the GTO thin film to obtain high-performance I-V characteristics were investigated to prepare the excellent GTO channel. As a result, the characteristics of mobility µ 2.13 cm2 / Vs, subthreshold swing value SS 1.08 V, threshold voltage Vth 6.08 V, and on-current ION 1.5 mA were obtained at post-annealing 300°C. A stacked gate insulator film of SiO2 and BLT gaves a memory window 4.8 Vand counterclockwise hysteresis.","PeriodicalId":215213,"journal":{"name":"2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114604188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of GeO2/Ge interface characteristics by Hf-Post Metallization Annealing and Hf-Post Metallization Oxidation 高频后金属化退火和高频后金属化氧化改善GeO2/Ge界面特性
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2021-06-29 DOI: 10.23919/AM-FPD52126.2021.9499174
Haruka Horiguchi, H. Ino, Yoshitaka Iwazaki, T. Ueno
{"title":"Improvement of GeO2/Ge interface characteristics by Hf-Post Metallization Annealing and Hf-Post Metallization Oxidation","authors":"Haruka Horiguchi, H. Ino, Yoshitaka Iwazaki, T. Ueno","doi":"10.23919/AM-FPD52126.2021.9499174","DOIUrl":"https://doi.org/10.23919/AM-FPD52126.2021.9499174","url":null,"abstract":"Recently, Ge has been attracting attention as a material for next generation MOS devices. The use of Ge substrate as a high-µ material is expected to improve the operating speed of the devices. On the other hand, the characteristics of GeO2/Ge interface deteriorate after thermally oxidation at high temperature. In this study, we have tried to improve the interfacial properties by Hf-Post Metallization Annealing and Hf-Post Metallization Oxidation. As a result, strong Ge-O bonds are formed at GeO2/Ge interface as well as in GeO2 film itself, while causing the improvement of the interface properties as well as leakage current.","PeriodicalId":215213,"journal":{"name":"2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123446928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flexible OLED lighting and signage for automotive application 柔性OLED照明和汽车标牌应用
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2021-06-29 DOI: 10.23919/AM-FPD52126.2021.9499164
C. May
{"title":"Flexible OLED lighting and signage for automotive application","authors":"C. May","doi":"10.23919/AM-FPD52126.2021.9499164","DOIUrl":"https://doi.org/10.23919/AM-FPD52126.2021.9499164","url":null,"abstract":"OLED lighting technology offers huge possibilities for novel lighting products, especially for automotive applications. Large volume commercial success can only be achieved if unique design possibilities are consequently employed in novel application scenarios and cost effective roll-to-roll production technology. The unique design options of OLED technology as well as the current status of roll-to-roll technology are therefore described in detail. Special focus is given on patterning methods.","PeriodicalId":215213,"journal":{"name":"2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125952133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of π-Conjugated Materials for Efficient Organic Solar Cells 高效有机太阳能电池π共轭材料的研究进展
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2021-06-29 DOI: 10.23919/AM-FPD52126.2021.9499200
I. Osaka
{"title":"Development of π-Conjugated Materials for Efficient Organic Solar Cells","authors":"I. Osaka","doi":"10.23919/AM-FPD52126.2021.9499200","DOIUrl":"https://doi.org/10.23919/AM-FPD52126.2021.9499200","url":null,"abstract":"In this contribution, design and synthesis of various π-conjugated building unit based on naphthobisthiadiazole heteroaromatic ring are presented. These units are successfully incorporated into donor polymers and an acceptor molecule, which are found to have high π-π interactions to form well-ordered structures in the thin film. These materials therefore function well in organic photovoltaic cells. The structure-properties relationships are also discussed in depth.","PeriodicalId":215213,"journal":{"name":"2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127055343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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