Performance Improvement of Solution-Processed Organic Floating-Gate Transistor Memories via Tuning the Work Function of Gate Electrodes

Abstract

Top-gate/bottom-contact organic floating-gate transistor memories have been fabricated by solution processes using an ambipolar polymer semiconductor and an organic composite film composed of polymer insulator and soluble pentacene derivative. The solution-processed memory devices with electron injection layers exhibit good n-type transistor behavior and memory characteristics by storing of holes in the organic composite charge storage layer after programming in the dark. It is found that tuning the work function of gate electrodes using the metal oxide layer of Cs2CO3 improves charge retention characteristics.