Tian Cao, Weiqiang Liu, Chenghua Wang, Xiaoping Cui, F. Lombardi
{"title":"Design of approximate Redundant Binary multipliers","authors":"Tian Cao, Weiqiang Liu, Chenghua Wang, Xiaoping Cui, F. Lombardi","doi":"10.1145/2950067.2950094","DOIUrl":"https://doi.org/10.1145/2950067.2950094","url":null,"abstract":"Approximate or inexact computing is an attractive design methodology for low power design and is achieved by relaxing the requirement of accuracy. This paper proposes the first approximate design of Redundant Binary (RB) multipliers. An approximate Booth encoder and an approximate RB compressor are proposed and analyzed. RB multipliers are proposed based on the proposed approximate Booth encoder and approximate RB compressor. A regular RB partial product array is also applied in the approximate RB multiplier by eliminating the last Error Correcting Word (ECW). The error analysis is performed by considering the approximate factor as related to the inexact bit width of the RB multipliers. Simulation results for delay, area and power consumption at 45nm CMOS technology are provided. The proposed designs are compared with previous approximate Normal Binary (NB) Booth multipliers; the comparison results show that the proposed designs are better than existing approximate NB Booth multipliers when considering both the Power-Delay Product (PDP) and the Normalized Mean Error Distance (NMED).","PeriodicalId":213559,"journal":{"name":"2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132439035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Gupta, A. Makosiej, A. Vladimirescu, A. Amara, S. Cotofana, C. Anghel
{"title":"TFET NDR skewed inverter based sensing method","authors":"N. Gupta, A. Makosiej, A. Vladimirescu, A. Amara, S. Cotofana, C. Anghel","doi":"10.1145/2950067.2950069","DOIUrl":"https://doi.org/10.1145/2950067.2950069","url":null,"abstract":"Many of CMOS SRAMs (like 8T-SRAMs), DRAMs, non-volatile memories and TFET SRAMs use single ended read. Optimization of such sensing schemes is critical. Conventional single ended sensing requires either full discharge of bitline (BL) or voltage/current reference in order to use differential sense amplifier. There is speed and/or power penalty because of either full discharge of BL or complex sense amplifier using references. In this paper, a TFET negative differential resistance property based skewed inverter single-ended read scheme has been proposed. This sensing scheme detects read with less than 200mV BL discharge with inverter based sensing. This results in simplified single ended scheme with speed and BL discharge similar to differential sensing schemes. Less than 400ps read delay is achieved for 200mV BL discharge at 1V supply.","PeriodicalId":213559,"journal":{"name":"2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"301 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134146152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mingyu Li, S. Khasanvis, Jiajun Shi, Sachin Bhat, Mostafizur Rahman, C. A. Moritz
{"title":"Towards automatic thermal network extraction in 3D ICs","authors":"Mingyu Li, S. Khasanvis, Jiajun Shi, Sachin Bhat, Mostafizur Rahman, C. A. Moritz","doi":"10.1145/2950067.2950095","DOIUrl":"https://doi.org/10.1145/2950067.2950095","url":null,"abstract":"Thermal management is one of the critical challenges in 3D integrated circuits. Incorporating thermal optimizations during the circuit design stages requires a convenient automatic method of doing thermal characterization for feedback purposes. In this paper, we present a methodology, which supports thermal characterization by automatically extracting the steady-state thermal modeling resistance network from a post-placement physical design. The method follows a two-level hierarchical approach. It does fine-grained thermal modeling for standard cells, and then at higher level assembles the thermal modeling network of the input physical design by using the built standard cell thermal models, and adding the information on inter-cell connections as well as implemented thermal management features. The methodology has been implemented in Skybridge-3D-CMOS technology, but can be employed in other fine-grained 3D directions such as monolithic 3D CMOS. Large scale benchmarking has been performed, showing the ability of doing automated fine-grained thermal characterization in the order of seconds per thousands of 3D standard cells. In addition, the methodology is employed to highlight implications of added thermal extraction features.","PeriodicalId":213559,"journal":{"name":"2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124576485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A fully parallel approximate CORDIC design","authors":"Linbin Chen, F. Lombardi, Jie Han, Weiqiang Liu","doi":"10.1145/2950067.2950076","DOIUrl":"https://doi.org/10.1145/2950067.2950076","url":null,"abstract":"This paper proposes a new approximate scheme for a coordinate rotation digital computer (CORDIC) design; this scheme is based on modifying the existing Para-CORDIC architecture with multiple approximations. These approximations make possible a relaxation of the CORDIC algorithm itself, such that a fully parallel approximate CORDIC (FPAX-CORDIC) scheme is designed. This scheme avoids the memory register of Para-CORDIC and makes fully parallel the generation of the rotation direction. A comprehensive analysis and the evaluation of the error introduced by the approximations together with different circuit-related metrics are pursued using HSPICE as simulation tool. The error analysis of this paper combines existing figures of merit for approximate computing (such as the Mean Error Distance (MED)) with CORDIC-specific parameters; a good agreement between expected and simulated error values is found. As an application to image processing, the Discrete Cosine Transformation (DCT) is investigated by utilizing the proposed approximate FPAX-CORDIC architecture with different accuracy requirements. The results confirm the viability of the proposed scheme.","PeriodicalId":213559,"journal":{"name":"2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128962324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhizhong Zhang, Yue Zhang, Lei Yue, Li Su, Yichuan Shi, Youguang Zhang, Weisheng Zhao
{"title":"Ultra-low power all spin logic device acceleration based on voltage controlled magnetic anisotropy","authors":"Zhizhong Zhang, Yue Zhang, Lei Yue, Li Su, Yichuan Shi, Youguang Zhang, Weisheng Zhao","doi":"10.1145/2950067.2950103","DOIUrl":"https://doi.org/10.1145/2950067.2950103","url":null,"abstract":"The considerable power consumption on logic system will be an unavoidable bottleneck with the downscaling of technology node. Spintronic logic devices are considered as the promising solution due to its low-power potential. Among them, all spin logic device (ASLD) has drawn exceptional interests as it utilizes pure spin current instead of charge current. However, the relatively low efficiency of spin injection and detection hinders its development and application, especially in aspect of speed. In this paper, we apply the voltage controlled magnetic anisotropy (VCMA) mechanism to reduce the spin current density threshold of magnetization switching, which greatly accelerates logic operation. Through developing an accurate physics based model, micromagnetic and mixed SPICE simulations have been carried out to validate the acceleration process. This acceleration will be of significance for using electron spin for logic application.","PeriodicalId":213559,"journal":{"name":"2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124411740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hao Cai, You Wang, L. Naviner, Zhaohao Wang, Weisheng Zhao
{"title":"Approximate computing in MOS/spintronic non-volatile full-adder","authors":"Hao Cai, You Wang, L. Naviner, Zhaohao Wang, Weisheng Zhao","doi":"10.1145/2950067.2950101","DOIUrl":"https://doi.org/10.1145/2950067.2950101","url":null,"abstract":"Approximate computing and its related topics have shown the potential in next generation computing systems. In this paper, new circuit level design for approximate computing is proposed based on non-volatile (NV) logic-in-memory structure. Two types of NV approximate adders are implemented with circuit reconfiguration and insufficient writing current. Spin torque transfer magnetic tunnel junction (STT-MTJ) is used as NV memory element in magnetic full adder (MFA). The proposed approximate MFAs are implemented with 28nm ultra thin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FD-SOI) technology. Simulation results are presented including power consumption, circuit latency, leakage power, error distance and reliability performance. Low Vdd design strategies are discussed as well.","PeriodicalId":213559,"journal":{"name":"2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114959818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiajun Shi, Mingyu Li, S. Khasanvis, Mostafizur Rahman, C. A. Moritz
{"title":"Routability in 3D IC design: Monolithic 3D vs. Skybridge 3D CMOS","authors":"Jiajun Shi, Mingyu Li, S. Khasanvis, Mostafizur Rahman, C. A. Moritz","doi":"10.1145/2950067.2950078","DOIUrl":"https://doi.org/10.1145/2950067.2950078","url":null,"abstract":"Conventional 2D CMOS technology is reaching fundamental scaling limits, and interconnect bottleneck is dominating integrated circuit (IC) power and performance. While 3D IC technologies using Through Silicon Via or Monolithic Inter-layer Via alleviate some of these challenges, they follow a similar layout and routing mindset as 2D CMOS. This is insufficient to address routing requirements in high-density 3D ICs and even causes severe routing congestion at large-scale designs, limiting their benefits and scalability. Skybridge is a recently proposed fine-grained 3D IC fabric relying on vertical nanowires that presents a paradigm shift for scaling, while addressing associated 3D connectivity and manufacturability challenges. Skybridge's core fabric components enable a new 3D IC design approach with vertically-composed logic gates, and provide a greater degree of routing flexibility compared to conventional 2D and 3D ICs leading to much larger benefits and future scalability. In this paper, we present a methodology using relevant metrics to evaluate and quantify the benefits of Skybridge vs. state-of-the-art transistor-level monolithic 3D IC (T-MI) and 2D in terms of routability and its impact on large-scale circuits. This is enabled by a new device-to-system design flow with commercial CAD tools that we developed for large-scale Skybridge IC designs in 16nm node. Evaluation for standard benchmark circuits shows that Skybridge yields up to 1.6× lower routing demand against T-MI with no routing congestion (routing demand to resource ratio <; 1) at all metal layers. This 3D routability in conjunction with compact vertical gate design in Skybridge translate into benefits of up to 3× lower power and 11× higher density over 2D CMOS, while TLM-3DIC approach only has up to 22% power saving and 2× density improvement over 2D CMOS.","PeriodicalId":213559,"journal":{"name":"2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"21 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132747829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}