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Experimental measurement of the intrinsic carrier concentration of silicon 硅本征载流子浓度的实验测量
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111652
A. Sproul, M. Green
{"title":"Experimental measurement of the intrinsic carrier concentration of silicon","authors":"A. Sproul, M. Green","doi":"10.1109/PVSC.1990.111652","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111652","url":null,"abstract":"A recent review suggests that the commonly cited value of 1.45*10/sup 10/ cm/sup -3/ for the silicon intrinsic carrier concentration at 300 K is inconsistent with the best available experimental data. An alternative value of 1.08*10/sup -10/ cm/sup -/3 is reported with an estimated one standard deviation uncertainty of only 3%. This appears to be the most accurate experiment determination of this parameter at any temperature. Measurements with similar accuracy at temperatures in the range of 275 to 375 K are also reported for PERC Si solar cells.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115358129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Effects of radiation of InP cells epitaxially grown on Si and GaAs substrates 辐射对Si和GaAs衬底外延生长的InP细胞的影响
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111812
I. Weinberg, C. K. Swartz, D. Brinker, D. Wilt
{"title":"Effects of radiation of InP cells epitaxially grown on Si and GaAs substrates","authors":"I. Weinberg, C. K. Swartz, D. Brinker, D. Wilt","doi":"10.1109/PVSC.1990.111812","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111812","url":null,"abstract":"The properties of heteroepitaxial InP solar cells were determined both before and after 10 MeV proton irradiations. Numerical values, obtained for the diffusion and recombination components of the reverse saturation currents, were found to be consistent with the distribution of dislocations. The radiation resistance of the heteroepitaxial cells was significantly greater than that observed for n/p homoepitaxial InP cells. The carrier removal rate, obtained by C-V measurements, was 1.8*10/sup 3/ cm/sup -1/ for 10 MeV protons compared with 2.2 cm/sup -1/ for 1 MeV electrons. The high carrier removal rate was found to have no significant effect on the cell's series resistance. It was concluded that the heteroepitaxial cell performance is dominated by the high dislocation density attributable to lattice constant mismatch. Although the efficiencies of the existing cells are low, the achievement of 13.7% AM0 efficiencies using a GaAs substrate demonstrates the marked improvement that can be attained using more appropriate transition layers.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117331947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Mission applications for advanced photovoltaic solar arrays 先进光伏太阳能阵列的任务应用
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111833
P. Stella, J. West, R. Chave, D. Mcgee, A. Yen
{"title":"Mission applications for advanced photovoltaic solar arrays","authors":"P. Stella, J. West, R. Chave, D. Mcgee, A. Yen","doi":"10.1109/PVSC.1990.111833","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111833","url":null,"abstract":"The suitability of the advanced photovoltaic solar array (APSA) for future space missions was examined by considering the impact on the spacecraft system in general. The lightweight flexible blanket array system (>130 W/kG) was compared to rigid arrays and a radioisotope thermoelectric generator (RTG) static power source for a wide range of assumed future Earth orbiting and interplanetary mission applications. The study approach was to establish assessment criteria and a rating scheme, identify a reference mission set, perform the power system assessment for each mission, and develop conclusions and recommendations to guide future APSA technology development. The authors discuss the three selected power sources, the assessment criteria and rating definitions. and the reference missions. They present the assessment results in a convenient tabular format. It is concluded that the three power sources examined, APSA, conventional solar arrays, and RTGs, can be considered to complement each other. Each power technology has its own range of preferred applications.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116449851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Production of 20 A sec/sup -1/ a-Si alloys for use in solar cells 生产用于太阳能电池的20 A秒/sup -1/ A - si合金
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111892
P. Nath, K. Hoffman, J. Call, G. DiDio, S. Ovshinsky
{"title":"Production of 20 A sec/sup -1/ a-Si alloys for use in solar cells","authors":"P. Nath, K. Hoffman, J. Call, G. DiDio, S. Ovshinsky","doi":"10.1109/PVSC.1990.111892","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111892","url":null,"abstract":"The engineering principles used to make >20-A-s/sup -1/ intrinsic layers of good-photovoltaic-quality amorphous silicon over large areas are addressed. Deposition equipment was designed and installed in a plasma-assisted CVD (chemical vapor deposition) roll-to-roll processor. Films were made in this machine with gas mixtures containing silane. Same-bandgap tandem solar cells using this material had 8.2% (average) to 8.6% (best cell) conversion efficiencies.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117281248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sandia's CONCEPT-90 photovoltaic concentrator module 桑迪亚公司的CONCEPT-90光伏聚光器模块
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111748
C. Chiang, M. Quintana
{"title":"Sandia's CONCEPT-90 photovoltaic concentrator module","authors":"C. Chiang, M. Quintana","doi":"10.1109/PVSC.1990.111748","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111748","url":null,"abstract":"A description is given of Sandia's CONCEPT-90 module, which represents a novel type of point-focus photovoltaic concentrator module designed for improved safety, reliability, and performance, and for ease of component fabrication and module assembly. These improvements will combine to decrease the cost of electricity produced by this type of concentrator module. Unique features of the CONCEPT-90 module include encapsulated cell assemblies, simple flat components, and integral use of plastics. The first prototype of this module has been made using back-contact silicon concentrator cells and refractive secondary optical elements. The first prototype module is described, and results from outdoor tests are presented.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124650953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Light trapping in thin crystalline silicon solar cells 薄晶硅太阳能电池中的光捕获
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111628
J. Rand, R. Hall, A. Barnett
{"title":"Light trapping in thin crystalline silicon solar cells","authors":"J. Rand, R. Hall, A. Barnett","doi":"10.1109/PVSC.1990.111628","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111628","url":null,"abstract":"Optimally designed thin crystalline silicon solar cells (<50- mu m thick) have performance and cost advantages over conventional thick devices. The modeling and fabrication of light-trapping devices are described. Thin (30- mu m-thick) Si-film layers are formed on textured silicon substrates. The back surface of the thin Si film layers are passivated with SiO/sub 2/ coatings. Long-wavelength light is confined through total internal reflections. The analysis of fabricated devices reveals the presence of the enhanced absorption predicted by the light-trapping model. Efficiencies for these structures reach 9.4%, among the highest reported for crystalline silicon devices of this thickness.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125032094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
The synthesis of solar radiation data for sizing stand-alone photovoltaic systems 太阳辐射数据的综合，以确定独立光伏系统的尺寸
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111761
R. Chapman
{"title":"The synthesis of solar radiation data for sizing stand-alone photovoltaic systems","authors":"R. Chapman","doi":"10.1109/PVSC.1990.111761","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111761","url":null,"abstract":"The author describes a model that synthesizes long-term hourly insolation data from monthly average insolation data using statistical models developed from 23.5 years of hourly data from 20 weather stations scattering across the United States. This model was developed specifically for sizing stand-along photovoltaic power systems and was therefore verified by comparing system performances resulting from the synthetic data with performances resulting from actual hourly data. Comparisons of the system performances indicate that the model is valid for system sizing regardless of array orientation, seasonal changes in the load, or the average system loss of energy. In all cases, the relative error between array sizes resulting from actual and synthetic data was less than 6%. Overall, the error was less than 2.5%. The model has one limitation in that it was designed specifically for stand-alone photovoltaic systems with energy storage and should not be applied to systems without storage. In general, it is valid for any system with two or more days of energy storage.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129767859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Passivated emitters in silicon solar cells 硅太阳能电池中的钝化发射体
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111622
R. King, P. Gruenbaum, R. Sinton, R. M. Swanson
{"title":"Passivated emitters in silicon solar cells","authors":"R. King, P. Gruenbaum, R. Sinton, R. M. Swanson","doi":"10.1109/PVSC.1990.111622","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111622","url":null,"abstract":"In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, J/sub o/, of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration is extracted. The lowest observed values of J/sub o/ which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data were applied to two types of backside-contact solar cells with large area (37.5 cm/sup 2/) and one-sun efficiencies up to 22.7%.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128295853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Photovoltaic power conditioning: Status and needs 光伏发电调节:现状与需求
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111754
P. Steitz, T. Key, F. Goodman
{"title":"Photovoltaic power conditioning: Status and needs","authors":"P. Steitz, T. Key, F. Goodman","doi":"10.1109/PVSC.1990.111754","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111754","url":null,"abstract":"The results of an Electric Power Research Institute (EPRI) and Sandia National Laboratories joint study of the status and needs of power conditioning for photovoltaic power stations are presented. The overall objective was to assess the state of the art and define a critical path for evolving next-generation power conditioners that are suitably reliable, efficient, and economical for the large-scale commercialization of photovoltaics. Power conditioning requirements for station sizes ranging from about 50 kW to hundreds of megawatts were considered. The study scope included site visits to several pilot photovoltaic stations, interactions with power electronic equipment vendors, consultations with utilities, and review of the extensive information on the subject compiled by Sandia, EPRI, and others. The authors identify key areas for improving power conditioning technology and describe some desirable activities for fostering the appropriate technology development.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125649061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Hydrogen passivation of polycrystalline silicon solar cells by means of catalytic reactions 多晶硅太阳能电池的氢钝化催化反应
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111709
M. Kaiser, R. Schindler
{"title":"Hydrogen passivation of polycrystalline silicon solar cells by means of catalytic reactions","authors":"M. Kaiser, R. Schindler","doi":"10.1109/PVSC.1990.111709","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111709","url":null,"abstract":"Due to emitter damage at the surface, hydrogen passivation of polycrystalline silicon solar cells by implantation or exposure to hydrogen plasma ultimately limits the yield. A method which uses the titanium-hydrogen system and does not increase the surface recombination at the emitter has been developed. In this method, hydrogen is diffused out of a TiH/sub x/ layer which releases atomic hydrogen upon heating. By cyclic heating, the TiH/sub x/ film can be replenished with hydrogen. Even thin films can act as near-ideal sources for atomic hydrogen diffusing into the polycrystalline substrate, comparable to the positive effects of hydrogen incorporation during implantation from a Kaufman-type ion source. The passivation depth is larger for this method. Following the hydrogen diffusion, the TiH/sub x/ layer may be converted into an antireflection coating.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128882876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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