Quantum Wells for Optics and Optoelectronics最新文献

Nonlinear Optical Properties of Quantum-Confined CdSe Microcrystallites 量子限制CdSe微晶的非线性光学性质

Quantum Wells for Optics and Optoelectronics Pub Date : 1990-10-01 DOI: 10.1364/JOSAB.7.002097

S. Park, R. Morgan, Y. Z. Hu, M. Lindberg, S. Koch, N. Peyghambarian

引用次数: 69

Inducing normally forbidden transitions within the conduction band of GaAs quantum wells 在砷化镓量子阱的导带内诱导通常禁止的跃迁

Quantum Wells for Optics and Optoelectronics Pub Date : 1990-07-23 DOI: 10.1063/1.103693

J. Pan, L. C. West, S. Walker, R. Malik, J. Walker

引用次数: 26

Monte Carlo Simulation of Femtosecond Spectroscopy in Semiconductor Heterostructures 半导体异质结构飞秒光谱的蒙特卡罗模拟

Quantum Wells for Optics and Optoelectronics Pub Date : 1989-12-01 DOI: 10.1016/0038-1101(89)90304-3

S. Goodnick, P. Lugli, W. Knox, D. Chemla

引用次数: 11

Temperature-Dependent Characteristics of GaAs/AlGaAs Multiple Quantum Well Optical Modulators GaAs/AlGaAs多量子阱光调制器的温度依赖特性

Quantum Wells for Optics and Optoelectronics Pub Date : 1989-10-15 DOI: 10.1063/1.344099

R. Bailey, R. Sahai, C. Lastufka, K. Vural

引用次数: 12

Second-order intersubband nonlinear optical susceptibilities of asymmetric quantum well structures. 非对称量子阱结构的二阶子带间非线性光学磁化率。

Quantum Wells for Optics and Optoelectronics Pub Date : 1989-09-01 DOI: 10.1364/JOSAB.6.001673

J. Khurgin

{"title":"Second-order intersubband nonlinear optical susceptibilities of asymmetric quantum well structures.","authors":"J. Khurgin","doi":"10.1364/JOSAB.6.001673","DOIUrl":"https://doi.org/10.1364/JOSAB.6.001673","url":null,"abstract":"Nonlinear optical properties of quantum wells (QW’s) and superlattices (SL’s) have recently become an object of intense studies 1,2. Quantum confinement of carriers leads to existence of strong resonances in the absorption spectra attributed to both conduction-to-valence band 3 and intersubband 4 transition. That, in turn, leads to large optical nonlinearities. Third order nonlinearity in symmetrical QW’s and SL’s have been studied by numerous authors 5-8. More recently, calculations of second order nonlinear coefficients of asymmetric QW structures were made for interband 9,10 and intersubband 10,11 transitions. Second -order nonlinear properties based on interband processes in various asymmetric QW structures were evaluated in Ref 10 for wide range of materials and QW geometries. It was snown that although both second harmonic generation (SHG) and linear electro-optic (LEO) coefficient are large (on the order of 10−10m /V) they are at least an order of magnitude smaller than what could be expected from a two-level asymmetric system with comparable transition strength. The reason for that is compensation of second-order susceptibilities associated with various ground and excited states and having opposite signs.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121999048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 79

High Quality Quantum Wells of InGaP/GaAs Grown by Molecular Beam Epitaxy 分子束外延生长InGaP/GaAs的高质量量子阱

Quantum Wells for Optics and Optoelectronics Pub Date : 1989-06-26 DOI: 10.1063/1.101035

M. Hafich, J. Quigley, R. E. Owens, G. Y. Robinson, Du Li, N. Ōtsuka

引用次数: 64

Interlayer Transport of Photoexcited Electrons in Type II Gallium-Arsenide/Aluminum-Arsenide Multi-Quantum Well Structures II型砷化镓/砷化铝多量子阱结构中光激发电子的层间输运

Quantum Wells for Optics and Optoelectronics Pub Date : 1989-04-24 DOI: 10.1364/qwoe.1989.mb3

P. Saeta, R. Fischer, B. Greene, R. Spitzer, B. A. Wilson

{"title":"Interlayer Transport of Photoexcited Electrons in Type II Gallium-Arsenide/Aluminum-Arsenide Multi-Quantum Well Structures","authors":"P. Saeta, R. Fischer, B. Greene, R. Spitzer, B. A. Wilson","doi":"10.1364/qwoe.1989.mb3","DOIUrl":"https://doi.org/10.1364/qwoe.1989.mb3","url":null,"abstract":"Optical pump-probe experiments on bulk GaAs and conventional type I GaAs/GaAlAs multiquantum well structures (MQWS) have determined the time scales on which photoexcited carriers (1) attain thermal equilibrium among themselves, (2) scatter out of the zone-center Γ-valley to accessible X- or L-valleys, (3) relax their excess energy to the lattice, and (4) recombine.(1-3) In most cases, carrier thermalization (via carrier-carrier collisions) and intervalley scattering occur in less than 100 fs, lattice heating in picoseconds, and recombination in nanoseconds to microseconds and longer. In these direct gap systems, photoexcited electrons and holes remain in the same layer or region of the crystal. In type II structures, the highest valence band occurs in one layer and the lowest conduction band in the other; excited carriers spatially segregate, one carrier remaining in the narrower bandgap material, the other transferring to the lower energy states occurring in the adjacent layer. We have determined that in a type II GaAs/AIAs MQWS having 8 monolayers of GaAs alternating with 25 monolayers of AlAs photoexcited electrons transfer from the Γ-valley of the GaAs layers to the X-valley of adjacent AlAs layers within 100 fs.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"111 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120942438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiple Quantum Well Passive Modelocking of NaCl Color Center Laser NaCl色心激光器的多量子阱被动锁模

Quantum Wells for Optics and Optoelectronics Pub Date : 1989-03-27 DOI: 10.1063/1.100753

M. Islam, E. Sunderman, I. Bar-Joseph, N. Sauer, T. Chang

引用次数: 24

InGaAs-GaAs Strained Layer Quantum Well Buried Heterostructure Lasers (λ> 1 μm) by Metalorganic Chemical Vapor Deposition 金属有机化学气相沉积制备InGaAs-GaAs应变层量子阱埋异质结构激光器(λ> 1 μm

Quantum Wells for Optics and Optoelectronics Pub Date : 1989-02-06 DOI: 10.1063/1.100935

P. York, K. Beernink, G. E. Fernández, J. Coleman

{"title":"InGaAs-GaAs Strained Layer Quantum Well Buried Heterostructure Lasers (λ> 1 μm) by Metalorganic Chemical Vapor Deposition","authors":"P. York, K. Beernink, G. E. Fernández, J. Coleman","doi":"10.1063/1.100935","DOIUrl":"https://doi.org/10.1063/1.100935","url":null,"abstract":"The buried heterostructure (BH) laser1 is one of the most attractive index guided stripe geometry semiconductor lasers because of the combination of strong lateral index guiding and absolute current confinement provided by a heterostructure discontinuity in the lateral direction. This structure is difficult to fabricate, however, because of the need for processing high quality narrow stripe etched mesas with a high quality regrowth interface at the edges of the active region. The regrowth is especially difficult2 for AlGaAs-GaAs BH lasers having higher aluminum composition confining layers. Various1,3-8 AlGaAs-GaAs BH laser structures have been reported. In this work, we report the characteristics of long wavelength (λ> 1 μm) strained layer InGaAs-GaAs-AlGaAs quantum well buried heterostructure lasers9-11 formed by wet chemical etching and a two-step MOCVD growth process. The relatively low aluminum composition of the confining layers allows for high quality regrowth interfaces and effective use2,12 of a silicon dioxide mask for selective epitaxy limited to the etched regions. The structures reported here have active region stripe widths of ~3.5 μm, an emission wavelength of λ ~ 1.074 μm, and threshold currents of less than 7 mA (cavity length 405 μm). Output powers in excess of 130 mW per uncoated facet with total differential quantum efficiencies of greater than 60% have been observed. Near-field patterns indicate that the lasers are operating on a fundamental lateral mode and are stable to more than thirty times laser threshold.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128709395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 74

Analysis of the quantum confined stark effect in GaSb/AlGaSb multiple quantum wells GaSb/AlGaSb多量子阱中量子受限stark效应分析

Quantum Wells for Optics and Optoelectronics Pub Date : 1988-12-05 DOI: 10.1063/1.100261

E. C. Carr, T. Wood, C. Burrus, T. Chiu

引用次数: 14