{"title":"GaAs/AlGaAs多量子阱光调制器的温度依赖特性","authors":"R. Bailey, R. Sahai, C. Lastufka, K. Vural","doi":"10.1063/1.344099","DOIUrl":null,"url":null,"abstract":"Optical modulators using the quantum confined stark effect1 in GaAs/AlxGa1−x As multiple quantum wells (MQWs) have been studied extensively for their potential applications in integrated optoelectronic devices and optical computing systems. This paper investigates the increased performance that can be achieved by operating the device at low temperatures and by improving the quality of the MQW layers.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Temperature-Dependent Characteristics of GaAs/AlGaAs Multiple Quantum Well Optical Modulators\",\"authors\":\"R. Bailey, R. Sahai, C. Lastufka, K. Vural\",\"doi\":\"10.1063/1.344099\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optical modulators using the quantum confined stark effect1 in GaAs/AlxGa1−x As multiple quantum wells (MQWs) have been studied extensively for their potential applications in integrated optoelectronic devices and optical computing systems. This paper investigates the increased performance that can be achieved by operating the device at low temperatures and by improving the quality of the MQW layers.\",\"PeriodicalId\":205579,\"journal\":{\"name\":\"Quantum Wells for Optics and Optoelectronics\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Quantum Wells for Optics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.344099\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Wells for Optics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.344099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature-Dependent Characteristics of GaAs/AlGaAs Multiple Quantum Well Optical Modulators
Optical modulators using the quantum confined stark effect1 in GaAs/AlxGa1−x As multiple quantum wells (MQWs) have been studied extensively for their potential applications in integrated optoelectronic devices and optical computing systems. This paper investigates the increased performance that can be achieved by operating the device at low temperatures and by improving the quality of the MQW layers.
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