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Proceedings of ISAF-ECAPD-PFM 2012最新文献

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Local polarization in strontium barium niobate (SBN) epitaxial thin films investigated using Kelvin Force Microscopy (KFM) 开尔文力显微镜(KFM)研究铌酸锶钡(SBN)外延薄膜的局部极化
Proceedings of ISAF-ECAPD-PFM 2012 Pub Date : 2012-07-09 DOI: 10.1109/ISAF.2012.6297795
M. Cuniot-Ponsard
{"title":"Local polarization in strontium barium niobate (SBN) epitaxial thin films investigated using Kelvin Force Microscopy (KFM)","authors":"M. Cuniot-Ponsard","doi":"10.1109/ISAF.2012.6297795","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297795","url":null,"abstract":"The Kelvin Force Microscopy technique is exploited to obtain quantitative information on the local polarization dependences in strontium barium niobate epitaxial thin films.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"35 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91187794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields 退极化场不对称筛选导致的铁电晶界势垒
Proceedings of ISAF-ECAPD-PFM 2012 Pub Date : 2012-07-09 DOI: 10.1109/ISAF.2012.6297727
Y. Genenko, O. Hirsch, P. Erhart
{"title":"Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields","authors":"Y. Genenko, O. Hirsch, P. Erhart","doi":"10.1109/ISAF.2012.6297727","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297727","url":null,"abstract":"Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84248420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ferroelectric and dielectric properties of bismuth ferrite based thin films by Pulsed Laser Deposition 脉冲激光沉积铋铁氧体基薄膜的铁电性能和介电性能
Proceedings of ISAF-ECAPD-PFM 2012 Pub Date : 2012-07-09 DOI: 10.1109/ISAF.2012.6297782
R. Rivera, M. Hejazi, A. Safari
{"title":"Ferroelectric and dielectric properties of bismuth ferrite based thin films by Pulsed Laser Deposition","authors":"R. Rivera, M. Hejazi, A. Safari","doi":"10.1109/ISAF.2012.6297782","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297782","url":null,"abstract":"BiFeO<sub>3</sub> (BFO) has stimulated a great interest in recent years for its room temperature multiferroic behavior with very high remnant polarization. However, the leakage current of BFO films is very high. To lower the leakage current, we have developed thin films with following target compositions on SrRuO<sub>3</sub> buffered on SrTiO<sub>3</sub> substrate by Pulsed Laser Deposition (PLD): (A) BiFeO<sub>3</sub>, (B) 0.88Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-0.08Bi<sub>0.5</sub>K<sub>0.5</sub>TiO<sub>3</sub>-0.04BaTiO<sub>3</sub>, (C) 0.6BiFeO<sub>3</sub>-0.4(Bi<sub>0.5</sub>K<sub>0.5</sub>TiO<sub>3</sub>) The phase, growth orientation, microstructural characterization and electrical properties were investigated as a function of deposition parameters. The epitaxial bi-layered 300nm BNT-BKT-BT/BFO thin films (150nm each) exhibited ferroelectric behavior as: 2P<sub>r</sub> = 44.0 μC.cm<sup>-2</sup>, 2E<sub>c</sub> = 200 kV.cm<sup>-1</sup> and K = 140. Thin films with a composition of 0.6BFO-0.4BKT have also been deposited with different oxygen pressures of 300-500 mTorr. Preliminary results of 0.6BFO-0.4BKT films show that the leakage current can be suppressed by about 4 orders of magnitude which in turn improves the ferroelectric and dielectric properties of the films. It is observed that the remnant polarization increases from 8 to 19 μC.cm<sup>-2</sup> as the oxygen pressure is changed from 500 to 300mtorr.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"74 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86299301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Conductivity investigations of layered Mn2P2S6 and Cu0.52Mn1.74P2S6 crystals 层状Mn2P2S6和Cu0.52Mn1.74P2S6晶体的电导率研究
Proceedings of ISAF-ECAPD-PFM 2012 Pub Date : 2012-07-09 DOI: 10.1109/ISAF.2012.6297776
A. Dziaugys, J. Banys, Y. Vysochanskii
{"title":"Conductivity investigations of layered Mn2P2S6 and Cu0.52Mn1.74P2S6 crystals","authors":"A. Dziaugys, J. Banys, Y. Vysochanskii","doi":"10.1109/ISAF.2012.6297776","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297776","url":null,"abstract":"The dielectric properties of Mn<sub>2</sub>P<sub>2</sub>S<sub>6</sub> and Cu<sub>0.52</sub>Mn<sub>1.74</sub>P<sub>2</sub>S<sub>6</sub> crystals were investigated in broad frequency (20 Hz-1 MHz) and temperature range (100 K-430 K). No anomaly in temperature dependence of complex dielectric permittivity indicating the polar phase transition can be detected in measured temperature range. The dielectric properties of presented crystals are mainly caused by high conductivity. The frequency spectra of conductivity obey the Almond-West power law. The activation energy of conductivity was found to be E<sub>A</sub>/k= 0.82 eV (Mn<sub>2</sub>P<sub>2</sub>S<sub>6</sub>) and E<sub>A</sub>/k= 0.81 eV (Cu<sub>0.52</sub>Mn<sub>1.74</sub>P<sub>2</sub>S<sub>6</sub>). A suggestion is given that the electric conductivity in these crystals can be interpreted by electronic mechanism.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"41 4","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72992190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of supplemental plate for piezoelectric system to distribute impact force 压电系统中分散冲击力的附加板设计
Proceedings of ISAF-ECAPD-PFM 2012 Pub Date : 2012-07-09 DOI: 10.1109/ISAF.2012.6297760
S. Hidaka, Jeong Hun Kim, H. Jung, Yooseob Song, Se Bin Kim, K. H. Baek, T. Sung
{"title":"Design of supplemental plate for piezoelectric system to distribute impact force","authors":"S. Hidaka, Jeong Hun Kim, H. Jung, Yooseob Song, Se Bin Kim, K. H. Baek, T. Sung","doi":"10.1109/ISAF.2012.6297760","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297760","url":null,"abstract":"The relationship between deformation degree and curvature to the output voltage of piezoelectric system was analyzed. The calculated data and experimental data were compared. The experiment was held by using tip mass of 10 g, 20 g, and 30 g for the various thickness of piezoelectric material as 0.15 mm and 0.2 mm for various type design of supplemental plate. As results, at the vibration acceleration of 4 m/s2, the lowest average Ix value was resulted the highest voltage of 26.12 V. However, when the vibration acceleration of 40 m/s2, the lowest standard deviation of curvature ratio, ρ, and resulted the highest voltage of 58.98 V. This study proves that the deformation degree and curvature ration can be controlled.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"53 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76486656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nano-patterned PZT films for perspective functional materials 透视功能材料的纳米PZT薄膜
Proceedings of ISAF-ECAPD-PFM 2012 Pub Date : 2012-07-09 DOI: 10.1109/ISAF.2012.6297758
M. Waegner, G. Suchaneck, G. Gerlach, L. Eng, A. Finn
{"title":"Nano-patterned PZT films for perspective functional materials","authors":"M. Waegner, G. Suchaneck, G. Gerlach, L. Eng, A. Finn","doi":"10.1109/ISAF.2012.6297758","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297758","url":null,"abstract":"In this work, we describe the fabrication of PZT nanodisc arrays isolated by a polymer layer and contacted with a top electrode. PZT thin films were deposited by multi-target sputtering onto a platinum/titanium bottom electrode and structured by means of nanosphere lithography. To guarantee short-circuit-free evaporation of a top electrode, the space between the nanostructures was filled by a polymer. Two approaches for the filling are demonstrated: (i) imprinting and (ii) skim coating. Single nanodiscs embedded in a flexible polymer matrix have two major advantages. First, taking into account the flexibility of the matrix they can vibrate freely in lateral direction and, second, due to shrinking to the nanoscale, predominant directions of the polarization form, such as vortex-or bubble-like domain patterns. Piezoresponse force microscopy was performed on patterned and non-patterned samples with and without a top electrode to check the local piezoresponse. Comparison of both samples revealed an increase in lateral piezoactivity for patterned samples while the out-of-plane piezoresponse remained constant.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"17 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74113298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films 多晶PZT薄膜结构与纳米级压电性能的厚度依赖性
Proceedings of ISAF-ECAPD-PFM 2012 Pub Date : 2012-07-09 DOI: 10.1109/ISAF.2012.6297844
E. Araújo, E. C. Lima, I. Bdikin, A. Kholkin
{"title":"Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films","authors":"E. Araújo, E. C. Lima, I. Bdikin, A. Kholkin","doi":"10.1109/ISAF.2012.6297844","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297844","url":null,"abstract":"Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350°C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300°C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the film substrate interface are not primarily responsible for the observed self-polarization effect in our films.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74615825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigations of dielectric and ferroelectric properties of yttrium substituted SrBi2Ta2O9 ferroelectric ceramics: Investigations of yttrium substituted SBT ferroelectric ceramics 钇取代SrBi2Ta2O9铁电陶瓷介电和铁电性能的研究:钇取代SBT铁电陶瓷的研究
Proceedings of ISAF-ECAPD-PFM 2012 Pub Date : 2012-07-09 DOI: 10.1109/ISAF.2012.6297863
Sugandha, A. Jha
{"title":"Investigations of dielectric and ferroelectric properties of yttrium substituted SrBi2Ta2O9 ferroelectric ceramics: Investigations of yttrium substituted SBT ferroelectric ceramics","authors":"Sugandha, A. Jha","doi":"10.1109/ISAF.2012.6297863","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297863","url":null,"abstract":"In the present work yttrium substituted samples of compositions Sr1-xYxBi2Ta2O9 (x=0.0-0.1) were synthesized by solid state reaction method. The synthesized specimens were characterized for their structural and electrical properties. X-ray diffractograms of the samples reveal the single phase layered perovskite structure formation for yttrium content x ≤ 0.05. The temperature variation of dielectric constant shows that the Curie temperature (Tc) decreases on increasing the yttrium concentration. The dielectric loss reduces significantly with yttrium substitution. The ferroelectric properties improve with Y substitution and the maximum value of remnant polarization is observed for the composition with x =0.05. The observations have been discussed in terms of contribution from the cation vacancies introduced into the lattice structure due to donor substitution.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"25 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86836465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of ridge waveguides in LiNbO3 LiNbO3中脊波导的制备
Proceedings of ISAF-ECAPD-PFM 2012 Pub Date : 2012-07-09 DOI: 10.1109/ISAF.2012.6297792
B. Weigand, M. Stolze, F. Rubel, J. L’huillier, A. Lenhard, C. Becher, S. Wolff
{"title":"Fabrication of ridge waveguides in LiNbO3","authors":"B. Weigand, M. Stolze, F. Rubel, J. L’huillier, A. Lenhard, C. Becher, S. Wolff","doi":"10.1109/ISAF.2012.6297792","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297792","url":null,"abstract":"We have fabricated ridge waveguides in lithium niobate with sidewall roughness of 14 nm (rms) and sidewall angles of more than 71°. The use of thick electroplated metal masks for reactive ion etching (RIE) makes it possible to manufacture ridge structures with several microns in height. For light confinement towards the substrate we investigate direct heterobonding techniques. Due to the expected low transmission losses we envision future applications in the field of quantum optics.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"63 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89304959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Ferroelectric and magnetic properties of Fe-doped BaTiO3 thin films grown by the pulsed laser deposition 脉冲激光沉积fe掺杂BaTiO3薄膜的铁电性和磁性
Proceedings of ISAF-ECAPD-PFM 2012 Pub Date : 2012-07-09 DOI: 10.1063/1.4801965
E. Ramana, Bo Wha Lee, Chang Uk Jung, Sang Mo Yang, Ranju Jung, M. Jung
{"title":"Ferroelectric and magnetic properties of Fe-doped BaTiO3 thin films grown by the pulsed laser deposition","authors":"E. Ramana, Bo Wha Lee, Chang Uk Jung, Sang Mo Yang, Ranju Jung, M. Jung","doi":"10.1063/1.4801965","DOIUrl":"https://doi.org/10.1063/1.4801965","url":null,"abstract":"Fe-doped BaTiO3 thin films were grown on (001) oriented SrTiO3 substrates using pulsed-laser deposition technique. These films had a single-phase character and good epitaxial relationship with the substrate. Polarization-electric field (P-E) hysteresis revealed a saturated polarization with a remnant polarization (Pr) of 13.5 μC/cm2 for 10 mol% Fe-doped BaTiO3 films. Further increase of composition resulted in the large leakage currents and reduction of polarization. The piezoelectric domain switching in the films was confirmed by local hysteresis using piezoelectric force microscopy measurements. The Fe-doped BaTiO3 thin films exhibited room temperature ferromagnetism, and the magnetization value increased with increasing Fe concentration. Our results demonstrated that the addition of Fe ≤10 mol% in BaTiO3 induce the ferromagnetism and the switchable ferroelectric state.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"85 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90312961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 41
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