{"title":"退极化场不对称筛选导致的铁电晶界势垒","authors":"Y. Genenko, O. Hirsch, P. Erhart","doi":"10.1109/ISAF.2012.6297727","DOIUrl":null,"url":null,"abstract":"Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields\",\"authors\":\"Y. Genenko, O. Hirsch, P. Erhart\",\"doi\":\"10.1109/ISAF.2012.6297727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.\",\"PeriodicalId\":20497,\"journal\":{\"name\":\"Proceedings of ISAF-ECAPD-PFM 2012\",\"volume\":\"9 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of ISAF-ECAPD-PFM 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2012.6297727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ISAF-ECAPD-PFM 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2012.6297727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields
Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.
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