SPIE Advanced Lithography最新文献_第4页

Reversible nano-lithography for commercial approaches 用于商业方法的可逆纳米光刻

SPIE Advanced Lithography Pub Date : 2016-04-01 DOI: 10.1117/12.2205065

Jae Hyun Kim, C. Ahn

引用次数: 0

Strategies to enable directed self-assembly contact hole shrink for tight pitches 实现定向自组装接触孔收缩的策略

SPIE Advanced Lithography Pub Date : 2016-04-01 DOI: 10.1117/12.2219213

K. Schmidt, H. Osaki, Kota Nishino, M. Sanchez, Chi-Chun Liu, Tsuyoshi Furukawa, C. Chi, J. Pitera, N. Felix, D. Sanders

引用次数: 2

Investigation of coat-develop track system for placement error of contact hole shrink process 接触孔收缩工艺放置误差的涂层显影轨迹系统研究

SPIE Advanced Lithography Pub Date : 2016-04-01 DOI: 10.1117/12.2219925

M. Harumoto, H. Stokes, Yuji Tanaka, K. Kaneyama, C. Pieczulewski, M. Asai, I. Servin, M. Argoud, A. Gharbi, C. Lapeyre, R. Tiron, C. Monget

引用次数: 2

Nano-imprint lithography using poly (methyl methacrylate) (PMMA) and polystyrene (PS) polymers 纳米压印光刻采用聚甲基丙烯酸甲酯(PMMA)和聚苯乙烯(PS)聚合物

SPIE Advanced Lithography Pub Date : 2016-04-01 DOI: 10.1117/12.2218594

Y. Ting, S. Shy

{"title":"Nano-imprint lithography using poly (methyl methacrylate) (PMMA) and polystyrene (PS) polymers","authors":"Y. Ting, S. Shy","doi":"10.1117/12.2218594","DOIUrl":"https://doi.org/10.1117/12.2218594","url":null,"abstract":"Nano-imprinting lithography (NIL) technology, as one of the most promising fabrication technologies, has been demonstrated to be a powerful tool for large-area replication up to wafer-level, with features down to nanometer scale. The cost of resists used for NIL is important for wafer-level large-area replication. This study aims to develop capabilities in patterning larger area structure using thermal NIL. The commercial available Poly (Methyl Methacrylate) (PMMA) and Polystyrene (PS) polymers possess a variety of characteristics desirable for NIL, such as low material cost, low bulkvolumetric shrinkage, high spin coating thickness uniformity, high process stability, and acceptable dry-etch resistance. PMMA materials have been utilized for positive electron beam lithography for many years, offering high resolution capability and wide process latitude. In addition, it is preferable to have a negative resist like PMMA, which is a simple polymer with low cost and practically unlimited shelf life, and can be dissolved easily using commercial available Propylene glycol methyl ether acetate (PGMEA) safer solvent to give the preferred film thickness. PS is such a resist, as it undergoes crosslinking when exposed to deep UV light or an electron beam and can be used for NIL. The result is a cost effective patterning larger area structure using thermal nano-imprint lithography (NIL) by using commercial available PMMA and PS ploymers as NIL resists.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123712247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Control of morphological defects at the boundary between the periodic and non-periodic patterns in directed self-assembly process 定向自组装过程中周期性和非周期性图案边界处形态缺陷的控制

SPIE Advanced Lithography Pub Date : 2016-04-01 DOI: 10.1117/12.2218234

A. Yoshida, K. Yoshimoto, M. Ohshima, K. Kodera, Y. Naka, H. Kanai, S. Kobayashi, S. Maeda, Phubes Jiravanichsakul, Katsutoshi Kobayashi, H. Aoyama

{"title":"Control of morphological defects at the boundary between the periodic and non-periodic patterns in directed self-assembly process","authors":"A. Yoshida, K. Yoshimoto, M. Ohshima, K. Kodera, Y. Naka, H. Kanai, S. Kobayashi, S. Maeda, Phubes Jiravanichsakul, Katsutoshi Kobayashi, H. Aoyama","doi":"10.1117/12.2218234","DOIUrl":"https://doi.org/10.1117/12.2218234","url":null,"abstract":"In this study, we investigated a directed self-assembly (DSA) flow that could include a non-periodic pattern (i.e., wide line) lying in between the periodic line/space patterns, in a relatively simple and inexpensive way. A symmetric poly(styrene-block-methyl methacrylate) (PS-b-PMMA) with the natural periodicity (L0) of 30 nm was employed here. Our DSA flow has two key features. First, we used a hybrid approach that combined chemoepitaxy and graphoepitaxy methods to generate PMMA-attractive pinning guide patterns directly from ArF resist. Second, we attempted to utilize both the perpendicular lamellae in the periodic regions and the horizontal lamellae on the non-periodic pattern as an etch template. The advantage of this process will be a reduction of the number of lithographic processes, whereas the challenge is how to control the mixed morphologies at the boundary between the periodic and non-periodic regions. Our preliminary results from simulations and experiments showed that, in order to generate the horizontal lamellae on the non-periodic pattern, the PS-b-PMMA thickness on top of the non-periodic guide pattern should roughly match to ~1 L0, and the width of the non-periodic pattern should be larger than ~3-4 L0. In addition, the space between the periodic and non-periodic regions was found to be critical and it should be basically equal to the space between the guiding pins in the periodic regions (~75 nm) to minimize the formation of fingerprint morphology at the boundaries.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131342868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Improvement of sub-20nm pattern quality with dose modulation technique for NIL template production 用剂量调制技术改善NIL模板生产中亚20nm图案质量

SPIE Advanced Lithography Pub Date : 2016-04-01 DOI: 10.1117/12.2218809

Keisuke Yagawa, Kunihiro Ugajin, M. Suenaga, S. Kanamitsu, T. Motokawa, Kazuki Hagihara, Yukiyasu Arisawa, S. Kobayashi, M. Saito, Masamitsu Ito

{"title":"Improvement of sub-20nm pattern quality with dose modulation technique for NIL template production","authors":"Keisuke Yagawa, Kunihiro Ugajin, M. Suenaga, S. Kanamitsu, T. Motokawa, Kazuki Hagihara, Yukiyasu Arisawa, S. Kobayashi, M. Saito, Masamitsu Ito","doi":"10.1117/12.2218809","DOIUrl":"https://doi.org/10.1117/12.2218809","url":null,"abstract":"Nanoimprint lithography (NIL) technology is in the spotlight as a next-generation semiconductor manufacturing technique for integrated circuits at 22 nm and beyond. NIL is the unmagnified lithography technique using template which is replicated from master templates. On the other hand, master templates are currently fabricated by electron-beam (EB) lithography[1]. In near future, finer patterns less than 15nm will be required on master template and EB data volume increases exponentially. So, we confront with a difficult challenge. A higher resolution EB mask writer and a high performance fabrication process will be required. In our previous study, we investigated a potential of photomask fabrication process for finer patterning and achieved 15.5nm line and space (L/S) pattern on template by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist. In contrast, we found that a contrast loss by backscattering decreases the performance of finer patterning. For semiconductor devices manufacturing, we must fabricate complicated patterns which includes high and low density simultaneously except for consecutive L/S pattern. Then it’s quite important to develop a technique to make various size or coverage patterns all at once. In this study, a small feature pattern was experimentally formed on master template with dose modulation technique. This technique makes it possible to apply the appropriate exposure dose for each pattern size. As a result, we succeed to improve the performance of finer patterning in bright field area. These results show that the performance of current EB lithography process have a potential to fabricate NIL template.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114548241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved cost-effectiveness of the block co-polymer anneal process for DSA 提高了块段共聚物DSA退火工艺的成本效益

SPIE Advanced Lithography Pub Date : 2016-04-01 DOI: 10.1117/12.2220043

H. Pathangi, M. Stokhof, W. Knaepen, Varun Vaid, A. Mallik, B. T. Chan, N. Vandenbroeck, J. Maes, R. Gronheid

引用次数: 5

Directed self-assembly of Si-containing and topcoat free block copolymer 含硅和无面漆嵌段共聚物的定向自组装

SPIE Advanced Lithography Pub Date : 2016-04-01 DOI: 10.1117/12.2218243

T. Matsumiya, Takehiro Seshimo, T. Kurosawa, H. Yamano, K. Miyagi, T. Yamada, K. Ohmori

引用次数: 0

Nanoimprint lithography using disposable biomass template 纳米压印采用一次性生物质模板

SPIE Advanced Lithography Pub Date : 2016-04-01 DOI: 10.1117/12.2217483

M. Hanabata, S. Takei, Kigen Sugahara, S. Nakajima, Naoto Sugino, T. Kameda, J. Fukushima, Y. Matsumoto, A. Sekiguchi

引用次数: 7

Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications 自对准四重模式集成使用间隔上间隔间距分裂在抗蚀剂水平为32nm以下间距应用

SPIE Advanced Lithography Pub Date : 2016-04-01 DOI: 10.1117/12.2219321

Angélique Raley, S. Thibaut, N. Mohanty, Kal Subhadeep, Satoru Nakamura, Akiteru Ko, D. O'meara, K. Tapily, S. Consiglio, P. Biolsi

引用次数: 19