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2008 IEEE Workshop on Microelectronics and Electron Devices最新文献

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Design and Fabrication of a Meso-Scale Gyroscope 中尺度陀螺仪的设计与制造
2008 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2008-04-18 DOI: 10.1109/WMED.2008.4510654
S. Kotru, Jian-Hao Zhong, A. Highsmith, John E. Jackson
{"title":"Design and Fabrication of a Meso-Scale Gyroscope","authors":"S. Kotru, Jian-Hao Zhong, A. Highsmith, John E. Jackson","doi":"10.1109/WMED.2008.4510654","DOIUrl":"https://doi.org/10.1109/WMED.2008.4510654","url":null,"abstract":"The purpose of this work was to develop a low-cost gyroscope for general aviation. The work was supported by FAA to fulfill their goal of replacing all or part of ground based navigation for general aviation which could help to overcome the difficulties related to GPS failures. To achieve this goal researchers are focusing on MEMS technology. We propose a new design for the gyroscope which should increase the accuracy by increasing the mass of the gyro, that is, produce a meso-scale gyro using MEMS technology and increase signal amplitude by using piezoelectric actuators and sensors (instead of conventional electrostatics). Nb-doped Pb(Zr20,Ti80)O3 films were grown on both sides of a 4 inch Pt/TiO2/SiO2/Si/SiO2/TiO2/Pt wafer by chemical solution deposition. The effective transverse piezoelectric coefficients (-e3t,f) of these films were measured for the pulse and DC poled films and found to be in the range of 3.21 ~6.36 C/m2. These films were then used to fabricate a meso-scale gyroscope using standard photo lithography, wet etching, ion milling and deep reactive ion etching techniques. One side of the film was used for actuation and the other side for sensing of the gyroscope. The resonance frequency of the gyroscope was obtained at 12.60 kHz which matches very well with the simulated results.","PeriodicalId":189829,"journal":{"name":"2008 IEEE Workshop on Microelectronics and Electron Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128061570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References 基于肖特基二极管的低压CMOS温度传感器设计
2008 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2008-04-18 DOI: 10.1109/WMED.2008.4510657
C. Cahoon, R. J. Baker
{"title":"Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References","authors":"C. Cahoon, R. J. Baker","doi":"10.1109/WMED.2008.4510657","DOIUrl":"https://doi.org/10.1109/WMED.2008.4510657","url":null,"abstract":"This paper presents the design of a fully differential sigma-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN junction diode-based current references. This sensor was designed using the AMI 0.5um process through the MOSIS fabrication organization, and the chip performance will be evaluated and compared to the simulated results. The use of the Schottky diode and differential current sensing in the sigma-delta-type sensor allows for lower voltage operation and better noise performance.","PeriodicalId":189829,"journal":{"name":"2008 IEEE Workshop on Microelectronics and Electron Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121413305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Integrated Digital Control Scheme for Fully Integrated High Frequency DC-DC Power Converter 全集成高频DC-DC电源变换器的集成数字控制方案
2008 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2008-04-18 DOI: 10.1109/WMED.2008.4510656
Nan Shi, H. Hess
{"title":"Integrated Digital Control Scheme for Fully Integrated High Frequency DC-DC Power Converter","authors":"Nan Shi, H. Hess","doi":"10.1109/WMED.2008.4510656","DOIUrl":"https://doi.org/10.1109/WMED.2008.4510656","url":null,"abstract":"A digital control scheme for fully integrated high frequency DC-DC power converter is presented in this paper. A resonant converter current mode control algorithm uses a varactor-based control to obtain a regulated output voltage. Control algorithm is based on an accurate estimate of output voltage response and a state machine-based formulation. Employing a current-mode approach simplifies computation nicely, enabling an efficient and effective control algorithm. Typical response time for voltage regulation is 430 ns for a 500 MHz system. Eight-bit data conversion is used in this design. The control system is built on TSMC 0.25 mum mixed- signal process. Simulation results verified the design.","PeriodicalId":189829,"journal":{"name":"2008 IEEE Workshop on Microelectronics and Electron Devices","volume":"1948 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129209093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanism of Surface Bump Defect Formation in Phosphorus Doped Polysilicon-Silicon Nitride Film Stack 磷掺杂多晶硅-氮化硅薄膜堆表面凹凸缺陷形成机理研究
2008 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2008-04-18 DOI: 10.1109/WMED.2008.4510660
A. Khandekar, S. Surthi, V. Hou, N. Rana, B. Williams
{"title":"Mechanism of Surface Bump Defect Formation in Phosphorus Doped Polysilicon-Silicon Nitride Film Stack","authors":"A. Khandekar, S. Surthi, V. Hou, N. Rana, B. Williams","doi":"10.1109/WMED.2008.4510660","DOIUrl":"https://doi.org/10.1109/WMED.2008.4510660","url":null,"abstract":"Formation of bump defect on the surface of silicon nitride film deposited on top of phosphorus doped amorphous silicon layer was studied. The bump defect formation was found to be caused by localized phosphorus segregation on polysilicon surface. Wet chemical treatment of silicon surface involving HF- H2O2 chemistries were found to reduce bump defect formation.","PeriodicalId":189829,"journal":{"name":"2008 IEEE Workshop on Microelectronics and Electron Devices","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125004395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET 圆柱形MOSFET的阈值电压和漏极电流的推导及其在嵌入式MOSFET上的应用
2008 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2008-04-18 DOI: 10.1109/WMED.2008.4510655
V. Ananthan, R. Yang, C. Mouli
{"title":"Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET","authors":"V. Ananthan, R. Yang, C. Mouli","doi":"10.1109/WMED.2008.4510655","DOIUrl":"https://doi.org/10.1109/WMED.2008.4510655","url":null,"abstract":"Threshold voltage and drive current for a cylindrical MOSFET have been rigorously derived for the first time. An approximate expression for these quantities is presented for the purpose of analytical calculations. The model has been verified against TCAD simulations. The characteristics of a recessed gate MOSFET is analysed using these models.","PeriodicalId":189829,"journal":{"name":"2008 IEEE Workshop on Microelectronics and Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131586696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nanoindentation measurements of silicon nitride films deposited using hexachlorodisilane as the si icon precursor 用六氯二硅烷作为硅前驱体沉积氮化硅薄膜的纳米压痕测量
2008 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2008-04-18 DOI: 10.1109/WMED.2008.4510659
D. Goodner, G. Wei, D. Markowitz, K. Zhuang
{"title":"Nanoindentation measurements of silicon nitride films deposited using hexachlorodisilane as the si icon precursor","authors":"D. Goodner, G. Wei, D. Markowitz, K. Zhuang","doi":"10.1109/WMED.2008.4510659","DOIUrl":"https://doi.org/10.1109/WMED.2008.4510659","url":null,"abstract":"The mechanical properties of silicon nitride deposited using hexachlorodisilane (HCD) as the silicon precursor have been studied using nanoindentation. The hardness, elastic modulus and fracture resistance were found to be significantly lower for HCD nitride films than they are for nitride films deposited using dichlorosilane (DCS) as the silicon precursor. The addition of carbon to HCD nitride films resulted in slight decreases in hardness, modulus and fracture resistance. The hardness, modulus and fracture resistance of carbon-doped HCD nitride can be increased by raising the deposition temperature, increasing the ammonia:HCD gas flow ratio and/or post- deposition annealing.","PeriodicalId":189829,"journal":{"name":"2008 IEEE Workshop on Microelectronics and Electron Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129405442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Static Frequency Divider with Enhanced Frequency Performance 增强频率性能的静态分频器
2008 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2008-04-18 DOI: 10.1109/WMED.2008.4510658
P. Upadhyaya, G. la Rue
{"title":"Static Frequency Divider with Enhanced Frequency Performance","authors":"P. Upadhyaya, G. la Rue","doi":"10.1109/WMED.2008.4510658","DOIUrl":"https://doi.org/10.1109/WMED.2008.4510658","url":null,"abstract":"This paper presents the design and measured results of a novel static frequency divider that operates at a frequency 28% higher than a current-mode logic (CML) divider. The frequency divider was designed and implemented in IBM's 0.5 mum SiGe BiCMOS technology with an fT of 47 GHz. The divider adds an additional delayed clock phase to a conventional CML- based divider. Measured results show operation up to 26 GHz with power dissipation of 59 mW compared to a CML divider that operates up to 20.4 GHz with power dissipation of 54.6 mW.","PeriodicalId":189829,"journal":{"name":"2008 IEEE Workshop on Microelectronics and Electron Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115074762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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