{"title":"基于肖特基二极管的低压CMOS温度传感器设计","authors":"C. Cahoon, R. J. Baker","doi":"10.1109/WMED.2008.4510657","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a fully differential sigma-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN junction diode-based current references. This sensor was designed using the AMI 0.5um process through the MOSIS fabrication organization, and the chip performance will be evaluated and compared to the simulated results. The use of the Schottky diode and differential current sensing in the sigma-delta-type sensor allows for lower voltage operation and better noise performance.","PeriodicalId":189829,"journal":{"name":"2008 IEEE Workshop on Microelectronics and Electron Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References\",\"authors\":\"C. Cahoon, R. J. Baker\",\"doi\":\"10.1109/WMED.2008.4510657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of a fully differential sigma-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN junction diode-based current references. This sensor was designed using the AMI 0.5um process through the MOSIS fabrication organization, and the chip performance will be evaluated and compared to the simulated results. The use of the Schottky diode and differential current sensing in the sigma-delta-type sensor allows for lower voltage operation and better noise performance.\",\"PeriodicalId\":189829,\"journal\":{\"name\":\"2008 IEEE Workshop on Microelectronics and Electron Devices\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Workshop on Microelectronics and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMED.2008.4510657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Workshop on Microelectronics and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMED.2008.4510657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References
This paper presents the design of a fully differential sigma-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN junction diode-based current references. This sensor was designed using the AMI 0.5um process through the MOSIS fabrication organization, and the chip performance will be evaluated and compared to the simulated results. The use of the Schottky diode and differential current sensing in the sigma-delta-type sensor allows for lower voltage operation and better noise performance.
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