Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References

C. Cahoon, R. J. Baker
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引用次数: 17

Abstract

This paper presents the design of a fully differential sigma-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN junction diode-based current references. This sensor was designed using the AMI 0.5um process through the MOSIS fabrication organization, and the chip performance will be evaluated and compared to the simulated results. The use of the Schottky diode and differential current sensing in the sigma-delta-type sensor allows for lower voltage operation and better noise performance.
基于肖特基二极管的低压CMOS温度传感器设计
本文提出了一种全差分σ - δ温度传感器的设计,使用基于肖特基二极管的电流参考作为传统的基于PN结二极管的电流参考的替代品。该传感器采用AMI 0.5um工艺,通过MOSIS制造组织进行设计,并将芯片性能与仿真结果进行评估和比较。在sigma-delta型传感器中使用肖特基二极管和差分电流传感,可以实现更低的电压操作和更好的噪声性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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