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Proceedings of the Bipolar Circuits and Technology Meeting最新文献

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SCR memory cell modeling and characterization 可控硅存储单元的建模和表征
Proceedings of the Bipolar Circuits and Technology Meeting Pub Date : 1989-09-18 DOI: 10.1109/BIPOL.1989.69493
B. Bechdolt, M. Grubisich, J. Foerstner
{"title":"SCR memory cell modeling and characterization","authors":"B. Bechdolt, M. Grubisich, J. Foerstner","doi":"10.1109/BIPOL.1989.69493","DOIUrl":"https://doi.org/10.1109/BIPOL.1989.69493","url":null,"abstract":"Modeling and characterization of DC and AC properties of the SCR memory cell are described. Methods of modeling charge storage in saturated devices using primarily active devices are discussed. The methods allow individual component evaluation, so that performance-limiting parameters, device sensitivity, and the effects of scaling can be determined. The models are shown to be in good agreement with measured results on memory cells. Data on a 4 K self-timed RAM, which is fabricated on the MOSAIC 3 process, are presented and shown to be in good agreement with SPICE performance projections.<<ETX>>","PeriodicalId":189201,"journal":{"name":"Proceedings of the Bipolar Circuits and Technology Meeting","volume":"505 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116033332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A large signal DC model for GaAs/Ga/sub 1-x/Al/sub x/As heterojunction bipolar transistors GaAs/Ga/sub - 1-x/Al/sub -x/ As异质结双极晶体管的大信号直流模型
Proceedings of the Bipolar Circuits and Technology Meeting Pub Date : 1989-09-18 DOI: 10.1109/BIPOL.1989.69504
P. Grossman, A. Oki
{"title":"A large signal DC model for GaAs/Ga/sub 1-x/Al/sub x/As heterojunction bipolar transistors","authors":"P. Grossman, A. Oki","doi":"10.1109/BIPOL.1989.69504","DOIUrl":"https://doi.org/10.1109/BIPOL.1989.69504","url":null,"abstract":"An empirical large-signal DC model with temperature dependence that accurately characterizes heterojunction bipolar transistor (HBT) performance over eight decades of current is discussed. Simple methods for extracting the model parameters from measurements are included. When the transistor is simulated wit these parameters and an appropriate thermal circuit is used, the characteristic I-V curves for the device, showing self-heating effects, can be reproduced.<<ETX>>","PeriodicalId":189201,"journal":{"name":"Proceedings of the Bipolar Circuits and Technology Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131465608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Full-swing complementary BiCMOS logic circuits 全摆互补BiCMOS逻辑电路
Proceedings of the Bipolar Circuits and Technology Meeting Pub Date : 1989-09-18 DOI: 10.1109/BIPOL.1989.69498
H. Shin, C. Chen, E. D. Johnson, Y. Taur, S. Ramaswamy, G. Boudon
{"title":"Full-swing complementary BiCMOS logic circuits","authors":"H. Shin, C. Chen, E. D. Johnson, Y. Taur, S. Ramaswamy, G. Boudon","doi":"10.1109/BIPOL.1989.69498","DOIUrl":"https://doi.org/10.1109/BIPOL.1989.69498","url":null,"abstract":"Full-swing BiCMOS logic circuits for complementary MOS/bipolar technologies are described. The circuits utilize a complementary emitter-follower driver configuration for efficient driving, switched base-emitter shutting to achieve full swing, and CMOS diodes for base-to-base clamping. The performance of the circuits has been demonstrated in a BiCMOS technology featuring 0.8- mu m design rules and a single-poly (poly-emitter) npn-BJT (bipolar junction transistor) with an f/sub T/ of 15 GHz. Using an n-well-base substrate-pnp-BJT (f/sub T/ approximately=500 MHz), a gate delay (fan-in=2, fan-out=1) of 232 ps was obtained with a 3.6-V supply. Low-voltage operation has been demonstrated down to 1.4 V.<<ETX>>","PeriodicalId":189201,"journal":{"name":"Proceedings of the Bipolar Circuits and Technology Meeting","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125857680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
BiCMES and BiCMOD: bipolar-FET logic configurations for high speed applications BiCMES和BiCMOD:用于高速应用的双极fet逻辑配置
Proceedings of the Bipolar Circuits and Technology Meeting Pub Date : 1989-09-18 DOI: 10.1109/BIPOL.1989.69515
D. Chu, I. Abdel-Motaleb
{"title":"BiCMES and BiCMOD: bipolar-FET logic configurations for high speed applications","authors":"D. Chu, I. Abdel-Motaleb","doi":"10.1109/BIPOL.1989.69515","DOIUrl":"https://doi.org/10.1109/BIPOL.1989.69515","url":null,"abstract":"The performance of eight different BiCMOS logic configurations is discussed. The Z-type structure is found to be the most promising. The characteristics of Z-type inverters for Si MESFET and GaAlAs MODFET technologies are analyzed. The analysis shows that bipolar complementary structures, in general, can provide superior performance to other logic structures, and that BiCMES and BiCMOD structures can operate at higher speeds and lower power than BiCMOS.<<ETX>>","PeriodicalId":189201,"journal":{"name":"Proceedings of the Bipolar Circuits and Technology Meeting","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126097454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scaling of bipolar transistor analog properties for mixed analog/digital BiCMOS 混合模拟/数字BiCMOS双极晶体管模拟特性的缩放
Proceedings of the Bipolar Circuits and Technology Meeting Pub Date : 1989-09-18 DOI: 10.1109/BIPOL.1989.69514
D. Doyle, W. Lane
{"title":"Scaling of bipolar transistor analog properties for mixed analog/digital BiCMOS","authors":"D. Doyle, W. Lane","doi":"10.1109/BIPOL.1989.69514","DOIUrl":"https://doi.org/10.1109/BIPOL.1989.69514","url":null,"abstract":"The analog performance of polysilicon emitter transistors for small-geometry bipolar and biCMOS technologies is discussed. It is shown that under optimized processing conditions, high-performance analog transistors are obtained. The choice of interface treatment, emitter drive, and contact technology influence the overall performance. The transistors exhibit high gain, high Early voltage, and a low intrinsic base sheet resistance. Constant gain over eight decades of collector current is obtained. Temperature dependence of the gain is less than for implanted emitter transistors. The HF transistors have lower noise levels and smaller emitter resistances than RCA transistors with which they are compared. A 1.5- mu m transistor is shown to exhibit better overall performance with a polysilicon emitter than with an implanted, metal contacted emitter.<<ETX>>","PeriodicalId":189201,"journal":{"name":"Proceedings of the Bipolar Circuits and Technology Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121911216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Suppression of poly emitter bipolar hot carrier effects in an advanced BiCMOS technology 先进BiCMOS技术中抑制多发射极双极热载子效应的研究
Proceedings of the Bipolar Circuits and Technology Meeting Pub Date : 1900-01-01 DOI: 10.1109/BIPOL.1989.69478
S. P. Joshi
{"title":"Suppression of poly emitter bipolar hot carrier effects in an advanced BiCMOS technology","authors":"S. P. Joshi","doi":"10.1109/BIPOL.1989.69478","DOIUrl":"https://doi.org/10.1109/BIPOL.1989.69478","url":null,"abstract":"Bipolar hot carrier effects in phosphorous and arsenic poly emitter transistors are studied. The role of avalanche and tunnel current components in transistor current gain degradation is identified. The study indicates that transistors with tunneling emitter-phase junctions are less susceptible to current gain degradation. By optimization of emitter-base junction dopant profiles, the reliability of high-performance bipolar transistors can be significantly enhanced.<<ETX>>","PeriodicalId":189201,"journal":{"name":"Proceedings of the Bipolar Circuits and Technology Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129327231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 52
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