{"title":"Limiting and transient performances of a low loss PIN-Schottky limiter","authors":"Chin-leong Lim","doi":"10.1109/RFM.2013.6757206","DOIUrl":"https://doi.org/10.1109/RFM.2013.6757206","url":null,"abstract":"The main cause of loss in the PIN-Schottky limiter is the diodes' parasitic capacitances. Techniques to counter the parasitic capacitances include using bare chip, air cavity packaging, diode stacking, mesa construction, isolating the Schottky diode from the signal path and connecting the diodes to a low impedance node. But the aforementioned techniques either sacrifice cost, manufacturability, size, performances or thermal ruggedness. To reduce loss in the PIN-Schottky limiter, we re-configured its parasitics into a low pass ladder network. This paper reports on the new configuration's changed large signal and transient performances. We observed improved isolation at 0.9 and 2.4 GHz, and a beneficial reduction in the initial energy that slips through the limiter before limiting begins. In conclusion, this configuration simultaneously improves insertion loss, matching, isolation and spike leakage suppression. It has the potential to improve limiting performances in wideband receivers for wireless communication and medical imaging.","PeriodicalId":187090,"journal":{"name":"2013 IEEE International RF and Microwave Conference (RFM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133852324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Sahar, Mohamad Kamal A. Rahim Huda A Majid, M. Ismail
{"title":"Reconfigurable fractal dipole antenna operating at L-band and S-band","authors":"N. Sahar, Mohamad Kamal A. Rahim Huda A Majid, M. Ismail","doi":"10.1109/RFM.2013.6757307","DOIUrl":"https://doi.org/10.1109/RFM.2013.6757307","url":null,"abstract":"This paper describes a design of reconfigurable fractal dipole antenna which operates at 900 MHz. The performance of the antenna involves changing the switches to ON or OFF mode by controlling PIN diode switches. The operating frequency changes between L and S bands. The fractal structure is proposed in the antenna designs because of miniaturization. The 5 series dipole and fractal dipole are fabricated and analyzed. The size reduction of the antenna in terms of percentage between straight dipole and fractal dipole is 16.67 %. Both antennas performed at almost the same operating frequency and radiation pattern.","PeriodicalId":187090,"journal":{"name":"2013 IEEE International RF and Microwave Conference (RFM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133205742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. A. Baba, M. A. Zakariya, Z. Baharudin, M. H. M. Khir, S. M. Ali, J. J. Adz
{"title":"Cylindrical dielectric resonator antenna with TE 011 + δ mode","authors":"A. A. Baba, M. A. Zakariya, Z. Baharudin, M. H. M. Khir, S. M. Ali, J. J. Adz","doi":"10.1109/RFM.2013.6757280","DOIUrl":"https://doi.org/10.1109/RFM.2013.6757280","url":null,"abstract":"In this paper, theoretical and experimental study on cylindrical dielectric resonator antenna (CDRA) made of CCTO material is reported. The CDRA with high dielectric constant (εΓ = 55) is fed with aperture coupled 50 ς microstrip transmission line. The TE011+S mode of CDRA is excited to operate at 5.15-5.35 GHz for wireless local area network (WLAN) application. The electrical model of the aperture coupled CDRA is built to verify the antenna feasibility. The validity of the electrical model is confirmed by comparing the values of the return losses obtained through an electrical model using Agilent Advanced Design System (ADS) against those obtained through antenna geometry using computer simulation technology (CST) and fabricated prototype.","PeriodicalId":187090,"journal":{"name":"2013 IEEE International RF and Microwave Conference (RFM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115528232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of a 10 GHz low phase noise oscillator using split-ring resonator array","authors":"N. Mahyuddin, Nur Liyana Abdul Latif","doi":"10.1109/RFM.2013.6757271","DOIUrl":"https://doi.org/10.1109/RFM.2013.6757271","url":null,"abstract":"A series feedback split ring resonator oscillator design emphasizing on low phase noise has been proposed. The split ring resonator oscillator is consisted of an active device of ATF-36077, a GaAs PHEMT from Agilent, an array of split ring resonator for frequency determining element and microstrip-based output matching network. Mainly, this work focused on modeling and designing an optimum performance of SRRs for the best oscillator performance. The simulation of SRRs oscillator has been modeled using Agilent Advanced Design System and CST Microwave Studio software. The optimum design is fabricated on RO4003C printed circuit board which has a dielectric constant of 3.55 and height of 0.813 mm. The SRR oscillator is analyzed for functionality and performance by using PXA N9030A Signal Analyzer. Subsequently, based on this design, the oscillator exhibited a low phase noise of -90.51 dBc/Hz at offset frequency of 100 kHz and an output power of -0.65 dBm at the oscillating frequency of 9.15 GHz.","PeriodicalId":187090,"journal":{"name":"2013 IEEE International RF and Microwave Conference (RFM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130349024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Siavash Moghadami, Farzaneh Jalalibidgoli, A. Ahmadi
{"title":"Analysis and design LC cross coupled VCO regarding different phase noise approaches","authors":"Siavash Moghadami, Farzaneh Jalalibidgoli, A. Ahmadi","doi":"10.1109/RFM.2013.6757266","DOIUrl":"https://doi.org/10.1109/RFM.2013.6757266","url":null,"abstract":"This paper presents two fully integrated cross coupled low phase noise K and Ku bands LC Voltage Controlled Oscillators (VCO) using symmetric spiral inductors that have been designed and simulated using commercial 0.18μm CMOS technology. The simulated phase noises are around -136.2 dBc/Hz and -129.3 dBc/Hz (PMOS and NMOS respectively) at the offset frequency of 1MHz from the 16.1 GHz and 18.8 GHz center frequencies. The Power consumptions of both VCO circuits are about 10 mW. These designs are one of the best phase noises (by means of increasing tank quality factor) reported till now. Also, two phase noise approaches (Time and frequency domain) have been discussed.","PeriodicalId":187090,"journal":{"name":"2013 IEEE International RF and Microwave Conference (RFM)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114080337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. A. Fayadh, F. Malek, H. A. Adnan, N. Saudin, Jaafar A. Aldhaibani
{"title":"Finger-shaped antenna design for ultra-wideband applications","authors":"R. A. Fayadh, F. Malek, H. A. Adnan, N. Saudin, Jaafar A. Aldhaibani","doi":"10.1109/RFM.2013.6757216","DOIUrl":"https://doi.org/10.1109/RFM.2013.6757216","url":null,"abstract":"In recent years, the UWB technology in wireless communication systems is required for many military, civilian, and medical applications, so small and economic UWB antennas need to be produced for these purposes. Since the Federal Communications Commission (FCC) reported the UWB frequency of 7.5 GHz (from 3.1 GHz to 10.6 GHz) was licensed for high data rate wireless technology and antenna plays a very role in UWB systems. The design, simulation, and fabrication of finger-shaped antenna are presented in this paper. The designed antenna has a reflection coefficient (S11) less than -10 dB and voltage standing wave ratio (VSWR) less than 2 for the frequency of 4 to 12 GHz. The far field radiation patterns are introduced with the proposed antenna dimensions and feeding by microstrip transmission line feeder. Simulation and fabrication results for S11 VSWR, radiation patterns, and gain of the proposed antenna are presented and discussed along the frequency band 4 to 12 GHz.","PeriodicalId":187090,"journal":{"name":"2013 IEEE International RF and Microwave Conference (RFM)","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129081132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. A. Baba, M. A. Zakariya, Z. Baharudin, M. H. M. Md Khir, S. M. Ali, J. J. Adz
{"title":"Electrical model of two element aperture coupled cylindrical dielectric resonator antenna array","authors":"A. A. Baba, M. A. Zakariya, Z. Baharudin, M. H. M. Md Khir, S. M. Ali, J. J. Adz","doi":"10.1109/RFM.2013.6757309","DOIUrl":"https://doi.org/10.1109/RFM.2013.6757309","url":null,"abstract":"In this paper, electrical models of single element cylindrical dielectric resonator antenna (CDRA) and two element CDRA array made of Calcium Copper Titanium Oxide (CCTO) material are presented. The 50 Δ microstrip transmission line is used to excite the CDRAs through coupling slots etched on the ground plane. The electric models of single element CDRA and two element CDRA array are designed by using Advanced Design System (ADS). The electrical circuits are used to validate the CST design feasibility. The validity of RLC model is verified by comparing the return loss of the ADS model against those obtained through computer simulation technology (CST) and fabricated prototype. The results obtained through simulated (CST and ADS) designs and fabricated prototype of single element CDRA (0.20 GHz and 0.23 GHz) and two elements CDRA array (0.375 GHz and 0.510 GHz) are in good agreement.","PeriodicalId":187090,"journal":{"name":"2013 IEEE International RF and Microwave Conference (RFM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116845024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Multiband planar inverted-F antenna with modified short arm and ground slots for bandwidth enhancement","authors":"Nurul Shafinaz Saaidin, A. R. Razali, A. Bakar","doi":"10.1109/RFM.2013.6757222","DOIUrl":"https://doi.org/10.1109/RFM.2013.6757222","url":null,"abstract":"In this paper, a planar inverted-F antenna with the bandwidth enhancement techniques is presented. The antenna is designed and proposed a new modification of its shorting arm and introduction of ground slots to enhance the bandwidth of the fundamental resonant originally at 2.3 GHz. With this proposed configuration the original bandwidth of 500 MHz increases up to 120% (1100 MHz) which enables it to cover multi services such as PCS (1900 MHz), UMTS (2100 MHz), LTE (2300 MHz), WLAN (2400 MHz) and LTE (2600 MHz) bands at -10dB reflection coefficient. Result of simulation analyses shows their radiation patterns that are nearly omni-directional with antenna gain ranging from 2.7 to 3.1 dBi. The design considerations of the proposed antenna are described and the reflection coefficient and far-field radiation pattern results are presented and discussed. With these performances, the proposed antenna is a promising candidate to be considered by mobile antenna designers.","PeriodicalId":187090,"journal":{"name":"2013 IEEE International RF and Microwave Conference (RFM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121620950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of highly selective ultra-wideband bandpass filter using multiple resonance resonator","authors":"S. Khalid, W. P. Wen, L. Y. Cheong","doi":"10.1109/RFM.2013.6757239","DOIUrl":"https://doi.org/10.1109/RFM.2013.6757239","url":null,"abstract":"In this paper a highly selective ultra-wide band (UWB) bandpass filter is designed using interdigital parallel coupled lines (IDPCL) and multiple resonance resonator (MRR). Interdigital capacitor (IDC) is used to achieve strong coupling between short circuit stubs. Mixed coupling produced by IDC and coupled short circuit stubs introduce a finite transmission zero. This transmission zero will increase the selectivity on lower side of passband. MRR produces four transmission poles whereas total of six transmission poles are archived in the passband by using IDPCL at input/output. Proposed design is fabricated. Simulated and measured results are well correlated.","PeriodicalId":187090,"journal":{"name":"2013 IEEE International RF and Microwave Conference (RFM)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121670110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Spiral Electromagnetic Bandgap structure for EMI reduction","authors":"M. Alshargabi, Z. Abidin, M. Jenu","doi":"10.1109/RFM.2013.6757273","DOIUrl":"https://doi.org/10.1109/RFM.2013.6757273","url":null,"abstract":"The concept of using Electromagnetic Band Gap (EBG) structures is to provide excellent suppression of noise or interference (EMI) at GHz frequencies. In this work, a 3×3 spiral EBG planar structure was developed to achieve suppression of electromagnetic interference covering frequency range of 4 to 6 GHz considering the integration of EBG structure into the High Speed printed Circuit Board design (HSPCB).","PeriodicalId":187090,"journal":{"name":"2013 IEEE International RF and Microwave Conference (RFM)","volume":"273 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116567899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}