Modern Electronic Materials最新文献_第9页

Hydrodynamics and heat exchange of crystal pulling from melts. Part II: Numerical study of free convection mode Hydrodynamics和从熔体中拉出晶体的热交换。第二部分:自由对流模式的数值研究

Modern Electronic Materials Pub Date : 2021-12-30 DOI: 10.3897/j.moem.7.4.51073

V. Berdnikov

引用次数: 0

Oxygen nonstoichiometry and magnetic properties of doped manganites La0.7Sr0.3Mn0.95Fe0.05O3-δ 掺杂锰酸盐La0.7Sr0.3Mn0.95Fe0.05O3-δ的氧非化学计量学和磁性能

Modern Electronic Materials Pub Date : 2021-12-30 DOI: 10.3897/j.moem.7.4.80758

N. Kalanda, M. Yarmolich, A. Gurskii, A. Petrov, A. Zhaludkevich, O. Ignatenko, M. Serdechnova

{"title":"Oxygen nonstoichiometry and magnetic properties of doped manganites La0.7Sr0.3Mn0.95Fe0.05O3-δ","authors":"N. Kalanda, M. Yarmolich, A. Gurskii, A. Petrov, A. Zhaludkevich, O. Ignatenko, M. Serdechnova","doi":"10.3897/j.moem.7.4.80758","DOIUrl":"https://doi.org/10.3897/j.moem.7.4.80758","url":null,"abstract":"In this work, solid solutions of La0.7Sr0.3Mn0.95Fe0.05O3-δ with different oxygen content were obtained by the solid-phase reactions technique. Based on the investigation of the dynamics of changes in the oxygen index (3 – δ) during heating of the samples, the formation of a stressed state in their grains as a result of annealing was established. This results in a decrease in the mobility of oxygen vacancies during the reduction of cations according to the Mn4+ + e– → Mn3+ scheme and explains the decrease of released oxygen amount with an increase of δ as well as the heating rate of the samples. When studying the magnetic properties of the obtained samples, it was found that the temperature dependence of the magnetization obeys the Curie–Weiss law and as the oxygen defficiency increases, the Curie temperature for solid solutions decreases. It was found that the particles are in a frozen ferromagnetic state when measured in the low-temperature region of the М (Т) dependence in “zero-field mode” at Т ˂ ТВ. The presence of ferromagnetism at Т ˃ ТВ leads to a magnetically ordered state, in which the resulting magnetic moment of the magnetic particle is influenced by thermal fluctuations. When considering the temperature values of the magnetization of lanthanum-strontium manganite samples, it was found that with an increase of temperature in the low-temperature region, magnetic ordering is disturbed due to the excitation of magnons with a quadratic dependence of the energy from the wave vector, the number of which increases in proportion to T3/2. This results in a decrease in the manganite magnetization. The observed temperature dependence of the magnetization measured in the “field-cooling mode” was approximated taking into account the quadratic and non-quadratic dispersion laws of the magnon spectrum.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"49 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90302586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Self-Absorption Analysis of Perovskite-Based Luminescent Solar Concentrators 钙钛矿基发光太阳能聚光器的自吸收分析

Modern Electronic Materials Pub Date : 2021-12-10 DOI: 10.3390/electronicmat2040039

Yujian Sun, Yongcao Zhang, Yuxin Li, Yilin Li

引用次数: 0

Effect of Surfactant Addition on Organic Transparent Conductive Films Fabricated by Inkjet Printing Method 表面活性剂对喷墨印刷法制备有机透明导电薄膜的影响

Modern Electronic Materials Pub Date : 2021-12-01 DOI: 10.3390/electronicmat2040038

Atsushi Nitta, Naohiko Chosa, K. Takeda

引用次数: 1

Batteryless Electronic System Printed on Glass Substrate 玻璃基板上印刷的无电池电子系统

Modern Electronic Materials Pub Date : 2021-11-03 DOI: 10.3390/electronicmat2040037

P. Andersson Ersman, Jessica Åhlin, David Westerberg, A. Sawatdee, Patrik Arvén, M. Ludvigsson

引用次数: 1

A Novel Method to Significantly Improve the Mechanical Properties of n-Type Bi(1−x)Sbx Thermoelectrics Due to Plastic Deformation 一种显著改善n型Bi(1−x)Sbx热电材料塑性变形力学性能的新方法

Modern Electronic Materials Pub Date : 2021-11-02 DOI: 10.3390/electronicmat2040036

N. Sidorenko, Yaakov B. Unigovski, Z. Dashevsky, R. Shneck

{"title":"A Novel Method to Significantly Improve the Mechanical Properties of n-Type Bi(1−x)Sbx Thermoelectrics Due to Plastic Deformation","authors":"N. Sidorenko, Yaakov B. Unigovski, Z. Dashevsky, R. Shneck","doi":"10.3390/electronicmat2040036","DOIUrl":"https://doi.org/10.3390/electronicmat2040036","url":null,"abstract":"A unique method was developed to significantly improve the strength of Bi(1−x)Sbx single crystals, the most effective thermoelectric (TE) materials in the temperature range from 100 to 200 K due to their plastic deformation by extrusion. After plastic deformation at room temperature under all-round hydrostatic compression in a liquid medium, n-type Bi–Sb polycrystalline solid solutions show a significant increase in mechanical strength compared to Bi–Sb single crystals in the temperature range from 300 to 80 K. The significantly higher strength of extruded alloys in comparison with Bi–Sb single crystals is associated with the development of numerous grains with a high boundary surface as well as structural defects, such as dislocations, that accumulate at grain boundaries. Significant stability of the structure of extruded samples is achieved due to the uniformity of crystal plastic deformation under all-round hydrostatic compression and the formation of the polycrystalline structure consisting of grains with the orientation of the main crystallographic directions close to the original single crystal. The strengthening of Bi–Sb single crystals after plastic deformation allows for the first time to create workable TE devices that cannot be created on the basis of single crystals that have excellent TE properties, but low strength.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"411 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75190124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, Electronic, and Optical Properties of p-Type Semiconductors Cu2O and ZnRh2O4: A Self-Consistent Hybrid Functional Investigation p型半导体Cu2O和ZnRh2O4的结构、电子和光学性质:自洽杂化功能的研究

Modern Electronic Materials Pub Date : 2021-11-01 DOI: 10.3390/electronicmat2040035

D. Fritsch

引用次数: 2

Vis and NIR Diffused Reflectance Study in Disordered Bismuth Manganate ‒ Lead Titanate Ceramics 锰酸铋-钛酸铅无序陶瓷的可见光和近红外漫反射研究

Modern Electronic Materials Pub Date : 2021-10-29 DOI: 10.20944/preprints202110.0449.v1

A. Molak, A. Szeremeta, J. Koperski

引用次数: 2

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor 采用简化PECVD反应器一步经济高效地在Si(100)上生长高质量外延锗薄膜

Modern Electronic Materials Pub Date : 2021-10-10 DOI: 10.3390/electronicmat2040033

Jignesh Vanjaria, V. Hariharan, A. Arjunan, Yanze Wu, G. Tompa, Hongbin Yu

{"title":"One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor","authors":"Jignesh Vanjaria, V. Hariharan, A. Arjunan, Yanze Wu, G. Tompa, Hongbin Yu","doi":"10.3390/electronicmat2040033","DOIUrl":"https://doi.org/10.3390/electronicmat2040033","url":null,"abstract":"Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si photonics technology. In this work, an in-house assembled plasma enhanced chemical vapor deposition reactor was used to grow high quality epitaxial Ge films on Si (100) substrates. Low economic and thermal budget were accomplished by the avoidance of ultra-high vacuum conditions or high temperature substrate pre-deposition bake for the process. Films were deposited with and without plasma assistance using germane (GeH4) precursor in a single step at process temperatures of 350–385 °C and chamber pressures of 1–10 Torr at various precursor flow rates. Film growth was realized at high ambient chamber pressures (>10−6 Torr) by utilizing a rigorous ex situ substrate cleaning process, closely controlling substrate loading times, chamber pumping and the dead-time prior to the initiation of film growth. Plasma allowed for higher film deposition rates at lower processing temperatures. An epitaxial growth was confirmed by X-Ray diffraction studies, while crystalline quality of the films was verified by X-ray rocking curve, Raman spectroscopy, transmission electron microscopy and infra-red spectroscopy.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"44 3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85025817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Carbon Nanotubes Blended Nematic Liquid Crystal for Display and Electro-Optical Applications 用于显示和光电应用的碳纳米管混合向列液晶

Modern Electronic Materials Pub Date : 2021-10-08 DOI: 10.3390/electronicmat2040032

B. Singh, S. Sikarwar, K. Pandey, R. Manohar, M. Depriester, D. Singh

引用次数: 12