Kun Wang , Jia'nan Hu , Yirong Li , Cheng Zhang , Yan Gao , Kai Xiang , Longxin Li , Weijie Qin , Rui Sun , Qunping Fan , Jianhua Chen
{"title":"Molecular engineering of Y-series acceptors with oligo(ethylene glycol) side chains enables high efficiency in nonhalogenated solvent-processed organic solar cells","authors":"Kun Wang , Jia'nan Hu , Yirong Li , Cheng Zhang , Yan Gao , Kai Xiang , Longxin Li , Weijie Qin , Rui Sun , Qunping Fan , Jianhua Chen","doi":"10.1016/j.jsamd.2025.101064","DOIUrl":"10.1016/j.jsamd.2025.101064","url":null,"abstract":"<div><div>Most high-performance organic solar cells (OSCs) based on Y6-type acceptors are fabricated using chloroform, which hinders their commercialization due to issues with film uniformity and solvent toxicity. Although high-boiling-point non-halogenated solvents are promising alternatives, they typically suffer from low solubility and slow evaporation rates, complicating the crystallization process. Herein, we introduce Y-TEG, a Y-shaped acceptor functionalized with two oligo(ethylene glycol) (OEG) side chains on the pyrrole unit of Y6, which significantly enhances its solubility in non-halogenated solvents. OSCs based on PM6:Y-TEG processed from o-xylene achieved a power conversion efficiency (PCE) of 14.22%. The incorporation of Y6 as a third component further increased the PCE to 15.77%. This improvement is attributed to the role of Y6 in modulating intermolecular compatibility, optimizing crystallinity, and enhancing the phase separation morphology of the active layer. Consequently, the exciton dissociation and charge collection efficiency are improved, while charge recombination and energy losses are reduced. Notably, the PCE of 15.77% ranks among the highest reported for devices incorporating a host acceptor modified with OEG side chain and processed using non-halogenated solvents. These results demonstrate that side-chain engineering with OEG groups is a promising strategy for developing high-efficiency photovoltaic materials compatible with environmentally friendly processing solvents, providing confidence for future large-scale device fabrication.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101064"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145798203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuxin Li , Wenfei Shen , Shuhan Guo , Yanliang Yue , Yao Wang , Hao Fu , Qiao Wang , Matt J. Kipper , Christopher D. Snow , Soo Wohn Lee , Laurence A. Belfiore , Jianguo Tang
{"title":"Enhanced efficiency of blade-coated polymer solar cells via Eu3+/Tb3+-induced nanoaggregates of PS-b-PAA","authors":"Shuxin Li , Wenfei Shen , Shuhan Guo , Yanliang Yue , Yao Wang , Hao Fu , Qiao Wang , Matt J. Kipper , Christopher D. Snow , Soo Wohn Lee , Laurence A. Belfiore , Jianguo Tang","doi":"10.1016/j.jsamd.2025.101066","DOIUrl":"10.1016/j.jsamd.2025.101066","url":null,"abstract":"<div><div>Considered a pivotal advancement for commercial applications, blade coating technology for large area photovoltaic devices has emerged as a forefront research area in the field of polymer solar cells (PSCs). Herein, a high-performance PM6:L8-BO device is fabricated with the blade-coating method in ambient air. Meanwhile, Eu<sup>3+</sup>-induced diblock polymer aggregates (EIPAs) and Tb<sup>3+</sup>-induced diblock polymer aggregates (TIPAs) with excellent fluorescent properties were synthesized through self-assembly and incorporated as an additive into the PM6:L8-BO system to increase the ultraviolet light absorption and enhance BC-PSC light harvesting. By employing this strategy, the blade-coating device's power conversion efficiency (PCE) was improved from 12.25 % to 13.63 %, and the relative efficiency was enhanced by 11.3 %. In addition to the performance improvement, the stability of the devices was also enhanced by 19 %, indicating the effectiveness of this approach in producing more efficient and durable PSCs.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101066"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145749533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Raman , D. Balasubramanian , Mohanraj Kumar , N. Jhansi , M.A. Sayed , Essam H. Ibrahim , Mohd Shkir
{"title":"Exploring the innovative impact of silver doping on the photocatalytic dye degradation and antibacterial efficacy of α-CuV2O6 nanoparticles","authors":"R. Raman , D. Balasubramanian , Mohanraj Kumar , N. Jhansi , M.A. Sayed , Essam H. Ibrahim , Mohd Shkir","doi":"10.1016/j.jsamd.2025.101053","DOIUrl":"10.1016/j.jsamd.2025.101053","url":null,"abstract":"<div><div>The Ag-doped α-CuV<sub>2</sub>O<sub>6</sub> nanoparticles, with doping levels of 2, 4, and 6 wt%, were synthesized using a hydrothermal process, followed by the incorporation of varying concentrations at those same levels. This study examined how different doping levels affected the photocatalytic properties and antibacterial effectiveness of the samples, revealing that the 6 wt% doping level exhibited the highest efficiency in both areas. The triclinic structure of the synthesized Ag-doped α-CuV<sub>2</sub>O<sub>6</sub> nanoparticles at different doping levels was confirmed through X-ray diffraction analysis. The calculated crystallite size indicated an increase consistent with higher doping levels. SEM was used to analyze the morphological features of the nanoparticles, and EDS confirmed the presence of Ag, Cu, V, and O in the synthesized nanoparticles. Furthermore, XPS analysis indicated the presence of Ag, Cu, O, and V, with only trace amounts of absorbed carbon, confirming the purity of the Ag/α-CuV<sub>2</sub>O<sub>6</sub> phase with a triclinic structure. UV–Visible spectrophotometry measurements revealed a decrease in band gap values as doping levels increased. A distinct peak in the PL emission spectra within the green wavelength range indicated the formation of deep energy levels within the samples' band gap. The photocatalytic activity of the synthesized materials for degrading methylene blue dye under sunlight was evaluated using a UV–Visible spectrometer. The degradation efficiency increased with higher doping concentrations, reaching a maximum at 6 wt%. Values rose from 90.02 % for 2 wt% Ag to 96.20 % for 6 wt% Ag. The antibacterial properties of the synthesized compounds were tested against Gram-negative bacterial strains, especially Escherichia coli, resulting in noticeably larger inhibition zones. The bacterial inhibition zones for Ag-doped α-CuV<sub>2</sub>O<sub>6</sub> ranged from 4 mm at 2 wt% Ag to 16 mm at 6 wt% Ag. The nanoparticles with 6 wt% doping showed increased antibacterial activity, attributed to their significantly larger surface area, which boosted their effectiveness.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101053"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145749523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Suneyana Rawat , Ram Chandra Singh , Monika Michalska , Serguei V. Savilov , Markus Diantoro , Pramod K. Singh
{"title":"Multifunctional phosphonium-based ionic liquid embedded polymer electrolyte for dual energy conversion and storage","authors":"Suneyana Rawat , Ram Chandra Singh , Monika Michalska , Serguei V. Savilov , Markus Diantoro , Pramod K. Singh","doi":"10.1016/j.jsamd.2025.101084","DOIUrl":"10.1016/j.jsamd.2025.101084","url":null,"abstract":"<div><div>In the realm of green and sustainable energy use, solid electrolytes are recognized for their environmentally friendly and degradable properties. Simultaneously, significant efforts have been made to improve the ionic transport and interfacial stability of polymer electrolytes to facilitate the development of electrochemical devices. In this context, the influence of the phosphonium-based ionic liquid (PBILS), Tributylmethylphosphonium bis(trifluoromethane sulfonyl)imide, on the polyethylene oxide polymer electrolyte and its use in electrochemical applications is investigated. The optimized polymer electrolyte formulation, combined with 20 wt % ionic liquids, exhibits an ionic conductivity of approximately 7.17 × 10−4 S/cm at room temperature, along with a wide electrochemical stability window and remarkable thermal stability. The unique aspect of this work is the dual applicability of the PBIL-based polymer electrolyte, which was successfully used as a common electrolyte in both dye-sensitized solar cells (DSSCs) and electric double-layer capacitors (EDLCs). This dual functionality of the PBIL-based polymer electrolyte demonstrates its versatility, making it an exceptional candidate for energy storage and conversion systems.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101084"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145837501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chengdong Yang, Yue Wu, Linlin Su, Lihua Xu, Hongxu Li
{"title":"Trapping-tunable dual-mode optoelectronic device for optoelectronic synapse and photodetector","authors":"Chengdong Yang, Yue Wu, Linlin Su, Lihua Xu, Hongxu Li","doi":"10.1016/j.jsamd.2026.101098","DOIUrl":"10.1016/j.jsamd.2026.101098","url":null,"abstract":"<div><div>We propose a thickness-modulated strategy for implementing two operations (optoelectronic synapse and photodetector) simultaneously in the same device structure. For the MoS<sub>2</sub> thickness of <56 nm, the device works as an optoelectronic synapse with some neuromorphic functionalities such as spike-interval-dependent plasticity, spike-rate-dependent plasticity, and short-to-long-term plasticity. By combining synaptic plasticity with an artificial neural network, it achieves precise image recognition and classification with an accuracy of >95 %. As the thickness increases, excitons and trapping sites are separated by an increasing gap that facilitates a mode transition from synapse to detector. For 368-nm thickness, devices exhibit a photodetector mode with the response speed at the millisecond level and responsivity of 163 mA/W.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101098"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145977500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Se Jin Park , Jinhong Park , Dohyeon Gil , Jae Wook Ahn , Minsu Choi , Jaewon Jang , In Man Kang , Jangwoo Kim , Hyun Sung Park , Young-Gu Kang , HyeonDo Park , Do-Kyung Kim , Jin-Hyuk Bae
{"title":"Solution-crystallized and conductivity-tailored ultrathin-body indium oxide for high-bias-stress-robust enhancement-mode transistors","authors":"Se Jin Park , Jinhong Park , Dohyeon Gil , Jae Wook Ahn , Minsu Choi , Jaewon Jang , In Man Kang , Jangwoo Kim , Hyun Sung Park , Young-Gu Kang , HyeonDo Park , Do-Kyung Kim , Jin-Hyuk Bae","doi":"10.1016/j.jsamd.2026.101097","DOIUrl":"10.1016/j.jsamd.2026.101097","url":null,"abstract":"<div><div>Oxide semiconductors have emerged as promising candidates for next-generation electronic devices due to their inherent advantages. However, achieving high stability under strong gate bias stress remains a critical challenge, especially for applications in advanced electronic systems. In this study, we propose a conductivity-tailored thermal crystallization strategy to significantly reduce the high-bias-stress-induced instability of indium oxide (InO<sub>X</sub>) thin-film transistors (TFTs). The introduction of yttrium oxide (YO<sub>X</sub>) capping layer effectively suppresses the unintended excessive free electrons induced during thermal annealing, thereby preventing the degradation of threshold voltage (V<sub>T</sub>) and on/off current ratio. As a result, the proposed crystallization approach simultaneously enables excellent initial electrical performance and enhanced bias stability. Notably, the dependence of V<sub>T</sub> shift (ΔV<sub>T</sub>) on electric field stress (E<sub>STR</sub>), i.e., the slope of the ΔV<sub>T</sub> with respect to the E<sub>STR</sub>, was highly decreased for high-crystalline InO<sub>X</sub>/YO<sub>X</sub> TFTs compared to the control group. The mathematical relationship between ΔV<sub>T</sub> and E<sub>STR</sub>, along with the interpretation of the stretched exponential model parameters reflecting the physical mechanisms of device degradation, suggests that thermal crystallization suppresses the electron trapping in acceptor-like trap states in the bulk InO<sub>X</sub>. Therefore, these mechanisms contribute to the dramatic enhancement in high-electric field stability. These findings underscore the importance of microstructural engineering in oxide semiconductors for emerging applications requiring robust gate-field endurance and long-term device stability, including monolithic 3D integration, memory, and advanced display technologies.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101097"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145977497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Three-dimensional simulation research on plasma uniformity engineering: diamond film uniformity regulation based on resonant cavity structural resonance design","authors":"Zhijian Guo, Zhiliang Yang, Yuchen Liu, Liangxian Chen, Jinlong Liu, Junjun Wei, Chengming Li","doi":"10.1016/j.jsamd.2026.101108","DOIUrl":"10.1016/j.jsamd.2026.101108","url":null,"abstract":"<div><div>The polycrystalline diamond films have attracted considerable attention in the field of thermal management in high-frequency, high-power devices. However, non-uniform plasma distribution during the film fabrication process results in significant variations in film performance, which poses a substantial challenge to their practical application. To this end, the finite element method was employed to conduct a 3D simulation of non-uniform plasma distribution induced by structural anharmonicity in the MPCVD reactor. Research findings indicate that when the resonant cavity experiences geometric misalignments such as deflection or offset, leading to structural anharmonicity, the high power density region of the plasma will shift in a direction opposite to the change in structural resonance. The anharmonicity of the resonant cavity structure, which leads to a non-uniform plasma distribution, can be effectively compensated for by adjusting the structural resonant characteristic. For instance, when the resonant cavity antenna structure is deflected by 2°, the plasma will demonstrate a significant shift. By translating the substrate along the direction of this plasma shift by 3 mm, it can be restored to its central axis position within the resonant cavity. This investigation provides a novel theoretical foundation and technical pathway for the regulation of plasma spatial uniformity.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101108"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146188297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Charge transport modulation in photoreduction-derived metal–polymer/oxide hybrid interfaces for bifunctional performance","authors":"Yuan-Chang Liang, Rui-Ling Lu","doi":"10.1016/j.jsamd.2026.101110","DOIUrl":"10.1016/j.jsamd.2026.101110","url":null,"abstract":"<div><div>The study focused on developing porous ZnO nanosheets through a low-temperature hydrothermal method, followed by spin-coating with PANI and adjusting the photoreduction time to create Ag-particle-decorated ZPA composites. The objective was to examine how modulation of the interfacial structure influences both photoelectrochemical and antibacterial performance. As an n-type semiconductor, ZnO encounters challenges such as surface carrier recombination and photocorrosion. However, the introduction of PANI facilitates the formation of a p–n heterojunction, which effectively promotes the separation of charge carriers. Additionally, PANI enhances the absorption of visible light and improves conductivity, thereby increasing interfacial transport efficiency. Controlled photoreduction generates silver particles that form Schottky contacts with the ZnO/PANI composite, further enhancing visible light absorption, electron trapping, and carrier transport. The ZnO/PANI/Ag composite exhibits significant antibacterial activity against both <em>Escherichia coli</em> and <em>Staphylococcus aureus</em>, thereby achieving robust photoelectrochemical performance alongside effective antibacterial functionality. This study underscores the importance of interfacial engineering in the development of multifunctional photoelectronic materials for antibacterial applications.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101110"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146188153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xuening Jiang , Xinyu Zhu , Yige He , Xin Wang , Yu Gu , Qingzheng Wang , Lixia Yang , YuanJia Cao , Jiale Liang , Chaofeng Sang , Lei Jiang
{"title":"Sonication-induced microstructural modification of MXene for enhanced supercapacitor performance: Electrochemical characterization and mechanistic insights","authors":"Xuening Jiang , Xinyu Zhu , Yige He , Xin Wang , Yu Gu , Qingzheng Wang , Lixia Yang , YuanJia Cao , Jiale Liang , Chaofeng Sang , Lei Jiang","doi":"10.1016/j.jsamd.2025.101089","DOIUrl":"10.1016/j.jsamd.2025.101089","url":null,"abstract":"<div><div>MXene is a promising electrode material for micro-supercapacitors (MSCs), but its tendency to stack layers hinders electrolyte ion accessibility and impairs charge storage performance. We address this through ice-bath sonication of Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene dispersion, creating a microstructure with expanded interlayer spacing, increased porosity, reduced dimensions with enhanced interface density and active areas, while preserving high electrical conductivity. The resulting MXene-MSC demonstrates superior charge storage performance over its pristine counterpart: 61.3 % higher capacitance (91.8 mF/cm<sup>2</sup> at 5 mV/s), 1.5 times improved rate performance, and 4.2-fold higher energy density, without sacrificing long-term cycling stability. The mechanistic origin of the performance improvement was revealed via electrochemical impedance spectroscopy (EIS) analysis, which demonstrated significantly enhanced ionic diffusion kinetics and faster frequency response. These enhancements are directly ascribed to sonication-induced favorable microstructural features in MXene electrodes, which improve electrolyte accessibility and create optimized ion transport pathways with reduced length and increased efficiency. This work offers new insights into balancing electrical conductivity and ion transportation for high-performance supercapacitors.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101089"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fazliyana ‘Izzati Za'abar , Camellia Doroody , Puvaneswaran Chelvanathan , Ahmad Wafi Mahmood Zuhdi , Mohd Shaparuddin Bahrudin , Hua Ye , Zheng-Jie Feng , Mohd Hadri Hafiz Mokhtar
{"title":"Role of in-situ substrate heating and selenium-free annealing on the growth of MoSe2 interlayer in sputtered Cu(In,Ga)Se2 solar cells","authors":"Fazliyana ‘Izzati Za'abar , Camellia Doroody , Puvaneswaran Chelvanathan , Ahmad Wafi Mahmood Zuhdi , Mohd Shaparuddin Bahrudin , Hua Ye , Zheng-Jie Feng , Mohd Hadri Hafiz Mokhtar","doi":"10.1016/j.jsamd.2025.101094","DOIUrl":"10.1016/j.jsamd.2025.101094","url":null,"abstract":"<div><div>Chalcopyrite Cu(In,Ga)Se<sub>2</sub> or CIGSe solar cells (SCs) have demonstrated significant potential in thin film (TF) photovoltaic technologies, achieving record solar cell efficiencies of 23.6 % and commercial solar modules with efficiencies of 19.2 %. Despite these high-efficiency levels, the full potential of CIGSe-based PV technology has not yet been realized, as it is limited by losses related to optics, parasitics, and recombination. This work examines the effects of heat treatment on the electrical and microstructural properties of Mo TFs sputtered by DC, which are crucial as the back-contact layer in CIGSe SCs. Substrate heating and in-situ annealing are suggested during the DC sputtering of Mo TFs, and the results demonstrate a significant improvement in TF crystallinity, minimisation of microstrain, and decreased dislocation density, particularly in the (110) crystal orientation, which enhances electrical resistivity. In contrast to predicted behaviour, films annealed at 500 °C showed unexpectedly lengthy, fibrous grain structures with porosity. Findings here emphasize the significance of heat during and after the deposition process to improve the Mo film microstructure, which influences the electrical performance and interfacial properties of the back-contact layer in CIGSe SCs. Optimizing the microstructural growth of Mo films is essential to raising the stability and efficiency of CIGSE-based solar systems.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101094"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145881048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}