Journal of Science: Advanced Materials and Devices最新文献

{"title":"Graphene oxide nanoparticle-infused metamaterial sensor for low permittivity characterization","authors":"Md.Bakey Billa ,&nbsp;Mohammad Tariqul Islam ,&nbsp;Touhidul Alam ,&nbsp;Mandeep Singh ,&nbsp;Mohamed Ouda ,&nbsp;Abdulmajeed M. Alenezi ,&nbsp;Mohamad A. Alawad","doi":"10.1016/j.jsamd.2026.101101","DOIUrl":"10.1016/j.jsamd.2026.101101","url":null,"abstract":"<div><div>Accurate characterization of low-permittivity materials is essential for advancing high-frequency electronics, novel substrates, and microwave sensing systems. However, conventional methods often suffer from bulkiness, limited sensitivity, or complex measurement processes. To overcome these limitations, an innovative graphene oxide nanoparticle-infused metamaterial sensor specifically engineered for low-permittivity detection. The sensor comprises a hybrid circular and square split-ring resonator (SRRs) fabricated using 0.035 mm conductive copper tape on a graphene oxide substrate, enabling tunable resistive properties and enhanced electromagnetic confinement. The sensor is experimentally measured in an X-band waveguide system with TRL calibration from 8 to 10 GHz. The sensor exhibits a strong agreement between simulated and measured S₂₁ responses, with a resonance shift from 8.592 GHz <em>(ε = 1</em>) to 8.36 GHz (<em>ε = 3.66</em>), and a relative error consistently below 1 %. Effective medium analysis reveals that the metamaterial exhibits negative permittivity (<em>ε &lt; 0</em>) and permeability (<em>μ&lt; 0</em>) at resonance, confirming its left-handed metamaterial behavior. The surface current, electric field, and magnetic field distributions show strong localization at the resonator gaps, contributing to enhanced sensing performance. A linear regression model between dielectric constant and resonance frequency shift (<em>Δf</em>) is developed with a coefficient of determination R² = 0.908, and the derived model exhibits a maximum absolute error under 2 %. The measured sensitivity reached up to 140.3 MHz/Δε for <em>ε</em> = 1.57, demonstrating superior performance in low-ε characterization compared to traditional sensors. The combination of metamaterial-inspired resonance behavior, tunable graphene conductivity, and analytical modeling enables this sensor to serve as an efficient, low-cost, and highly sensitive platform for dielectric characterization.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101101"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146034359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"3D printed multiscale resonant labyrinth composite metastructure for enhanced low-frequency microwave absorption","authors":"Yubing Duan ,&nbsp;Yunfeng Zhao ,&nbsp;Hao Xing ,&nbsp;Dawei Shen ,&nbsp;Zhen Yang","doi":"10.1016/j.jsamd.2025.101079","DOIUrl":"10.1016/j.jsamd.2025.101079","url":null,"abstract":"<div><div>The growing demand for electromagnetic dissipation in electronic and information technologies has prompted continuous innovation in microwave absorbers. However, conventional designs are often based on uniform structures, which face limitations in achieving simultaneous low-frequency and broadband performance due to their limited geometric diversity and synergistic effects. To overcome these challenges, we propose a multiscale resonant labyrinth metastructure that is designed with multiple combinations of cavity dimensions. This metastructure was fabricated via Fused Deposition Modeling (FDM) using a polyether ether ketone/flaky carbonyl iron particles (PEEK/FCIPs) composite. Simulation and experiment have demonstrated that the metastructure synergistically integrates multiple dissipation mechanisms, including quarter-wavelength resonance, multicavity resonance, and edge diffraction. The finally optimized design exhibits an effective absorption bandwidth from 2.04 to 16.02 GHz, with a strong absorption band (below −15 dB) covering 2.49–9.04 GHz at a 10 mm thickness. Experimental results agree well with the simulations, and also reveal excellent angular stability that maintains effective absorption up to 45° for both transverse electric (TE) and transverse magnetic (TM) polarizations. This work provides an innovative structural design strategy to overcome conventional absorption performance limits, particularly in low-frequency absorption, showing significant promise for practical electromagnetic protection applications.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101079"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145798232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bandgap-engineered 2D Dion–Jacobson perovskite solar cells for high-efficiency outdoor and indoor operation","authors":"M.S. Salem ,&nbsp;Ahmed Shaker ,&nbsp;Abdulrahman Albarrak ,&nbsp;Shoayee Dlaim Alotaibi ,&nbsp;Tariq S. Almurayziq ,&nbsp;Adwan Alanazi ,&nbsp;Muhammad Tauseef Qureshi ,&nbsp;Mohamed Okil","doi":"10.1016/j.jsamd.2026.101112","DOIUrl":"10.1016/j.jsamd.2026.101112","url":null,"abstract":"<div><div>Perovskite solar cells designed for both outdoor and indoor operation still struggle to combine long-term stability, bandgap optimization, and efficiencies approaching the Shockley–Queisser (SQ) limit, especially when low-dimensional phases are employed. This study explores the potential of two-dimensional (2D) Dion–Jacobson perovskites as absorber materials for efficient and potentially stable single-junction solar cells operating under both AM1.5G and indoor white LED illumination. Unlike many conventional photovoltaic (PV) materials, these 2D perovskites offer ultrahigh environmental stability together with tunable optical properties, making them attractive for diverse illumination environments. Herein, we focus on (PDA)(MA)_n–1Pb_nI_3n+1 structures with <em>n</em> = 2 and 4. A stepwise optimization workflow is implemented in which we first calibrate baseline devices to available experimental data, then systematically tune absorber thickness and bulk/interface defect densities to identify recombination-limited regimes. Next, we adjust band alignment via electron and hole transport layers and finally investigate series resistance contributions. This hierarchical approach clarifies how each parameter pushes the devices closer to their SQ limits. Under outdoor AM1.5G conditions, the <em>n</em> = 4 configuration emerges as the optimal structure, delivering superior device metrics, whereas under white LED illumination, the wider-bandgap <em>n</em> = 2 configuration is intrinsically better matched to the indoor spectrum. By combining physics-based SCAPS-1D simulations with a structured optimization strategy, this work provides concrete design guidelines for 2D Dion–Jacobson perovskite solar cells tailored to both outdoor and indoor PV applications.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101112"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146188155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analytical models for mean free path and resistivity of borophene for on-chip interconnects","authors":"Vinod Agarawal,&nbsp;Somesh Kumar","doi":"10.1016/j.jsamd.2025.101092","DOIUrl":"10.1016/j.jsamd.2025.101092","url":null,"abstract":"<div><div>Scaling copper interconnects below the 7-nm technology node results in severe resistivity increase due to enhanced electron scattering, necessitating alternative interconnect materials. This work proposes borophene nanoribbons (BNRs) and presents a novel analytical models to evaluate their intrinsic mean free path (MFP), resistance, and effective resistivity under ideal smooth-surface conditions. The model captures quantum transport effects and Fermi-energy-dependent conduction channels for armchair and zigzag BNRs and is benchmarked against graphene and copper. At the 7-nm node and a Fermi energy of 0.3 eV, borophene exhibits an intrinsic MFP comparable to graphene and nearly three orders of magnitude higher than copper. Additionally, borophene achieves up to an 85.5% reduction in effective resistivity compared to copper, while maintaining competitive performance relative to graphene. These findings demonstrate that Fermi-energy tuning significantly enhances borophene’s transport performance, highlighting its strong potential as a scalable and energy-efficient on-chip interconnect material for advanced CMOS technologies.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101092"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146034360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular engineering of Y-series acceptors with oligo(ethylene glycol) side chains enables high efficiency in nonhalogenated solvent-processed organic solar cells","authors":"Kun Wang ,&nbsp;Jia'nan Hu ,&nbsp;Yirong Li ,&nbsp;Cheng Zhang ,&nbsp;Yan Gao ,&nbsp;Kai Xiang ,&nbsp;Longxin Li ,&nbsp;Weijie Qin ,&nbsp;Rui Sun ,&nbsp;Qunping Fan ,&nbsp;Jianhua Chen","doi":"10.1016/j.jsamd.2025.101064","DOIUrl":"10.1016/j.jsamd.2025.101064","url":null,"abstract":"<div><div>Most high-performance organic solar cells (OSCs) based on Y6-type acceptors are fabricated using chloroform, which hinders their commercialization due to issues with film uniformity and solvent toxicity. Although high-boiling-point non-halogenated solvents are promising alternatives, they typically suffer from low solubility and slow evaporation rates, complicating the crystallization process. Herein, we introduce Y-TEG, a Y-shaped acceptor functionalized with two oligo(ethylene glycol) (OEG) side chains on the pyrrole unit of Y6, which significantly enhances its solubility in non-halogenated solvents. OSCs based on PM6:Y-TEG processed from o-xylene achieved a power conversion efficiency (PCE) of 14.22%. The incorporation of Y6 as a third component further increased the PCE to 15.77%. This improvement is attributed to the role of Y6 in modulating intermolecular compatibility, optimizing crystallinity, and enhancing the phase separation morphology of the active layer. Consequently, the exciton dissociation and charge collection efficiency are improved, while charge recombination and energy losses are reduced. Notably, the PCE of 15.77% ranks among the highest reported for devices incorporating a host acceptor modified with OEG side chain and processed using non-halogenated solvents. These results demonstrate that side-chain engineering with OEG groups is a promising strategy for developing high-efficiency photovoltaic materials compatible with environmentally friendly processing solvents, providing confidence for future large-scale device fabrication.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101064"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145798203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced efficiency of blade-coated polymer solar cells via Eu3+/Tb3+-induced nanoaggregates of PS-b-PAA","authors":"Shuxin Li ,&nbsp;Wenfei Shen ,&nbsp;Shuhan Guo ,&nbsp;Yanliang Yue ,&nbsp;Yao Wang ,&nbsp;Hao Fu ,&nbsp;Qiao Wang ,&nbsp;Matt J. Kipper ,&nbsp;Christopher D. Snow ,&nbsp;Soo Wohn Lee ,&nbsp;Laurence A. Belfiore ,&nbsp;Jianguo Tang","doi":"10.1016/j.jsamd.2025.101066","DOIUrl":"10.1016/j.jsamd.2025.101066","url":null,"abstract":"<div><div>Considered a pivotal advancement for commercial applications, blade coating technology for large area photovoltaic devices has emerged as a forefront research area in the field of polymer solar cells (PSCs). Herein, a high-performance PM6:L8-BO device is fabricated with the blade-coating method in ambient air. Meanwhile, Eu³⁺-induced diblock polymer aggregates (EIPAs) and Tb³⁺-induced diblock polymer aggregates (TIPAs) with excellent fluorescent properties were synthesized through self-assembly and incorporated as an additive into the PM6:L8-BO system to increase the ultraviolet light absorption and enhance BC-PSC light harvesting. By employing this strategy, the blade-coating device's power conversion efficiency (PCE) was improved from 12.25 % to 13.63 %, and the relative efficiency was enhanced by 11.3 %. In addition to the performance improvement, the stability of the devices was also enhanced by 19 %, indicating the effectiveness of this approach in producing more efficient and durable PSCs.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101066"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145749533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the innovative impact of silver doping on the photocatalytic dye degradation and antibacterial efficacy of α-CuV2O6 nanoparticles","authors":"R. Raman ,&nbsp;D. Balasubramanian ,&nbsp;Mohanraj Kumar ,&nbsp;N. Jhansi ,&nbsp;M.A. Sayed ,&nbsp;Essam H. Ibrahim ,&nbsp;Mohd Shkir","doi":"10.1016/j.jsamd.2025.101053","DOIUrl":"10.1016/j.jsamd.2025.101053","url":null,"abstract":"<div><div>The Ag-doped α-CuV₂O₆ nanoparticles, with doping levels of 2, 4, and 6 wt%, were synthesized using a hydrothermal process, followed by the incorporation of varying concentrations at those same levels. This study examined how different doping levels affected the photocatalytic properties and antibacterial effectiveness of the samples, revealing that the 6 wt% doping level exhibited the highest efficiency in both areas. The triclinic structure of the synthesized Ag-doped α-CuV₂O₆ nanoparticles at different doping levels was confirmed through X-ray diffraction analysis. The calculated crystallite size indicated an increase consistent with higher doping levels. SEM was used to analyze the morphological features of the nanoparticles, and EDS confirmed the presence of Ag, Cu, V, and O in the synthesized nanoparticles. Furthermore, XPS analysis indicated the presence of Ag, Cu, O, and V, with only trace amounts of absorbed carbon, confirming the purity of the Ag/α-CuV₂O₆ phase with a triclinic structure. UV–Visible spectrophotometry measurements revealed a decrease in band gap values as doping levels increased. A distinct peak in the PL emission spectra within the green wavelength range indicated the formation of deep energy levels within the samples' band gap. The photocatalytic activity of the synthesized materials for degrading methylene blue dye under sunlight was evaluated using a UV–Visible spectrometer. The degradation efficiency increased with higher doping concentrations, reaching a maximum at 6 wt%. Values rose from 90.02 % for 2 wt% Ag to 96.20 % for 6 wt% Ag. The antibacterial properties of the synthesized compounds were tested against Gram-negative bacterial strains, especially Escherichia coli, resulting in noticeably larger inhibition zones. The bacterial inhibition zones for Ag-doped α-CuV₂O₆ ranged from 4 mm at 2 wt% Ag to 16 mm at 6 wt% Ag. The nanoparticles with 6 wt% doping showed increased antibacterial activity, attributed to their significantly larger surface area, which boosted their effectiveness.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101053"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145749523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Three-dimensional simulation research on plasma uniformity engineering: diamond film uniformity regulation based on resonant cavity structural resonance design","authors":"Zhijian Guo,&nbsp;Zhiliang Yang,&nbsp;Yuchen Liu,&nbsp;Liangxian Chen,&nbsp;Jinlong Liu,&nbsp;Junjun Wei,&nbsp;Chengming Li","doi":"10.1016/j.jsamd.2026.101108","DOIUrl":"10.1016/j.jsamd.2026.101108","url":null,"abstract":"<div><div>The polycrystalline diamond films have attracted considerable attention in the field of thermal management in high-frequency, high-power devices. However, non-uniform plasma distribution during the film fabrication process results in significant variations in film performance, which poses a substantial challenge to their practical application. To this end, the finite element method was employed to conduct a 3D simulation of non-uniform plasma distribution induced by structural anharmonicity in the MPCVD reactor. Research findings indicate that when the resonant cavity experiences geometric misalignments such as deflection or offset, leading to structural anharmonicity, the high power density region of the plasma will shift in a direction opposite to the change in structural resonance. The anharmonicity of the resonant cavity structure, which leads to a non-uniform plasma distribution, can be effectively compensated for by adjusting the structural resonant characteristic. For instance, when the resonant cavity antenna structure is deflected by 2°, the plasma will demonstrate a significant shift. By translating the substrate along the direction of this plasma shift by 3 mm, it can be restored to its central axis position within the resonant cavity. This investigation provides a novel theoretical foundation and technical pathway for the regulation of plasma spatial uniformity.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101108"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146188297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Trapping-tunable dual-mode optoelectronic device for optoelectronic synapse and photodetector","authors":"Chengdong Yang,&nbsp;Yue Wu,&nbsp;Linlin Su,&nbsp;Lihua Xu,&nbsp;Hongxu Li","doi":"10.1016/j.jsamd.2026.101098","DOIUrl":"10.1016/j.jsamd.2026.101098","url":null,"abstract":"<div><div>We propose a thickness-modulated strategy for implementing two operations (optoelectronic synapse and photodetector) simultaneously in the same device structure. For the MoS₂ thickness of &lt;56 nm, the device works as an optoelectronic synapse with some neuromorphic functionalities such as spike-interval-dependent plasticity, spike-rate-dependent plasticity, and short-to-long-term plasticity. By combining synaptic plasticity with an artificial neural network, it achieves precise image recognition and classification with an accuracy of &gt;95 %. As the thickness increases, excitons and trapping sites are separated by an increasing gap that facilitates a mode transition from synapse to detector. For 368-nm thickness, devices exhibit a photodetector mode with the response speed at the millisecond level and responsivity of 163 mA/W.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101098"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145977500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solution-crystallized and conductivity-tailored ultrathin-body indium oxide for high-bias-stress-robust enhancement-mode transistors","authors":"Se Jin Park ,&nbsp;Jinhong Park ,&nbsp;Dohyeon Gil ,&nbsp;Jae Wook Ahn ,&nbsp;Minsu Choi ,&nbsp;Jaewon Jang ,&nbsp;In Man Kang ,&nbsp;Jangwoo Kim ,&nbsp;Hyun Sung Park ,&nbsp;Young-Gu Kang ,&nbsp;HyeonDo Park ,&nbsp;Do-Kyung Kim ,&nbsp;Jin-Hyuk Bae","doi":"10.1016/j.jsamd.2026.101097","DOIUrl":"10.1016/j.jsamd.2026.101097","url":null,"abstract":"<div><div>Oxide semiconductors have emerged as promising candidates for next-generation electronic devices due to their inherent advantages. However, achieving high stability under strong gate bias stress remains a critical challenge, especially for applications in advanced electronic systems. In this study, we propose a conductivity-tailored thermal crystallization strategy to significantly reduce the high-bias-stress-induced instability of indium oxide (InO_X) thin-film transistors (TFTs). The introduction of yttrium oxide (YO_X) capping layer effectively suppresses the unintended excessive free electrons induced during thermal annealing, thereby preventing the degradation of threshold voltage (V_T) and on/off current ratio. As a result, the proposed crystallization approach simultaneously enables excellent initial electrical performance and enhanced bias stability. Notably, the dependence of V_T shift (ΔV_T) on electric field stress (E_STR), i.e., the slope of the ΔV_T with respect to the E_STR, was highly decreased for high-crystalline InO_X/YO_X TFTs compared to the control group. The mathematical relationship between ΔV_T and E_STR, along with the interpretation of the stretched exponential model parameters reflecting the physical mechanisms of device degradation, suggests that thermal crystallization suppresses the electron trapping in acceptor-like trap states in the bulk InO_X. Therefore, these mechanisms contribute to the dramatic enhancement in high-electric field stability. These findings underscore the importance of microstructural engineering in oxide semiconductors for emerging applications requiring robust gate-field endurance and long-term device stability, including monolithic 3D integration, memory, and advanced display technologies.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101097"},"PeriodicalIF":6.8,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145977497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}