Journal of Science: Advanced Materials and Devices最新文献

{"title":"A detailed study on the physical, mechanical, structural and gamma ray shielding properties of Al2O3–Na2O–SiO2–B2O3–Bi2O3glass system","authors":"M.I. Sayyed ,&nbsp;Ashok Kumar ,&nbsp;Taha A. Hanafy ,&nbsp;Yasser Maghrbi","doi":"10.1016/j.jsamd.2024.100809","DOIUrl":"10.1016/j.jsamd.2024.100809","url":null,"abstract":"<div><div>The density, boron–boron separation, and molar volume of 4Al₂O₃–12Na₂O-(18-x)SiO₂-(64-x) B₂O₃-(2+2x)Bi₂O₃ (where x = 2, 4, 6 and 8 mol%) are increasing with the addition of Bi₂O₃. The addition of Bi₂O₃ results in an open network structure. The elastic moduli decrease from 34.711 to 29.875 GPa for Young modulus (E); 20.395 to 15.843 GPa for bulk modulus (B); from 15.257 to 13.494 GPa for shear modulus (G) and 40.738 to 33.836 GPa for longitudinal (L) respectively with increased Bi₂O₃ concentration. FTIR spectrainvestigation found BO₃, BO₄, SiO₄, and BiO₆ structural units to be present. The glasses' highest mass attenuation coefficient (MAC) is at 0.0395 MeV, the lowest energy value. It gradually decreases as energy increases. There is a decrease in the linear attenuation coefficient (LAC) values with energy. Sample Bi18 has the highest MAC and LAC values due to its high concentration of Bi₂O₃. Across the entire energy range, sample Bi18 has the highest effective atomic number, and the lowest half value layer and mean free path values across all energy values. The transmission factor (TF) values for Bi6 indicate that the required thickness for blocking 90% of the radiation must be greater than the thickness necessaryfor the attenuation of 50%. Bi18 has the lowest TF compared to other glass samples. The radiation protection efficiency values for Bi18 are highest, confirming their full protection ability. Bi18's is the best choice for radiation shielding.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"9 4","pages":"Article 100809"},"PeriodicalIF":6.7,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142703191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transition metal oxide based resistive random-access memory: An overview of materials and device performance enhancement techniques","authors":"Disha Yadav ,&nbsp;Amit Krishna Dwivedi ,&nbsp;Shammi Verma ,&nbsp;Devesh Kumar Avasthi","doi":"10.1016/j.jsamd.2024.100813","DOIUrl":"10.1016/j.jsamd.2024.100813","url":null,"abstract":"<div><div>The emergence of the big data era has led to enormous demand for memory devices that are low cost, flexible, fabrication friendly, transparent, energy efficient, and have a higher density. Resistive random-access memory (RRAM) is an outstanding emerging non-volatile memory technology that has the potential to change the avenue of future storage devices. It is a promising technology owing to its attributes like minimal power usage, simple structure, long endurance cycles, high retention time, integrability with the existing complementary metal oxide semiconductor process (CMOS), and excellent scalability. It is highly attractive for several applications like neuromorphic computing, Internet of Things, non-volatile logics, hardware security, and radiation hardened electronics. Despite significant advances in the field of RRAM, materials and recent advanced techniques to enhance its performance have not been reviewed in detail. This paper provides an in-depth review of recent advancements in the field of RRAM, including the material used for fabrication and the methods to enhance the device performance. Advanced materials, especially transition metal oxides like copper oxide, nickel oxide, zinc oxide, tantalum oxide, titanium oxide, and hafnium oxide, used to fabricate RRAM devices are reviewed and their impacts on the performance have been discussed. The key figure of merits such as endurance, retention, and multi-bit capability are studied in relation to resistive switching memories. Several methods such as structure engineering, doping, annealing, light irradiation, plasma treatment, and ion irradiation used to enhance devices' performance are discussed. Furthermore, the impact of low and high energy ion irradiation on RRAM's electrical performance is provided in detail. Finally, this paper provides directions for future research in this field based on the findings of this review.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"9 4","pages":"Article 100813"},"PeriodicalIF":6.7,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142703192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel carbon quantum dot (CQD) synthesis method with cost-effective reactants and a definitive indication: Hot bubble synthesis (HBBBS)","authors":"Beste Dipcin ,&nbsp;Bora Guvendiren ,&nbsp;Selcuk Birdogan ,&nbsp;Bukem Tanoren","doi":"10.1016/j.jsamd.2024.100797","DOIUrl":"10.1016/j.jsamd.2024.100797","url":null,"abstract":"<div><div>Carbon quantum dots (CQDs) are carbon-based biocompatible quantum dots that have low toxicity, are more soluble in water, have broad application areas, and the surface modification of these can be performed easily. In this study, we present a new CQD synthesis method with cost-effective reactants that can be easily found in laboratories are used. Besides, there is a definitive indication (bubble) for CQD production, unlike the other methods in the literature. The purification method of the CQDs was also optimized in this study. In the beginning of the synthesis, 3 times centrifugation (x3 CF) of the mixture was performed and the optimization of the purification method indicated that x3 CF before 3 days of dialysis membrane tubing (x3 CF &amp; 3 DM) resulted in the formation of the purest CQDs. The characterization of the CQDs was done utilizing UV–VIS spectrophotometer, Fourier Transfer Infrared Spectroscopy (FT-IR), Zetasizer, fluorescence microscopy, Dynamic Light Scattering (DLS), Scanning Electron Microscope (SEM), Energy Dispersive Spectroscopy (EDS), and Transmission Electron Microscopy (TEM). It was concluded that the CQD formation depended on the mixing of sulphuric acid:acetone (2:1) ratio in a hot (140–165 °C) and an inert environment, and bubble coverage of the mixture surface (30–60 s). The bubble formation due to the reaction between sulphuric acid and pure acetone at high temperatures gives the developed method’s name of “Hot Bubble Synthesis” (HBBBS).</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"9 4","pages":"Article 100797"},"PeriodicalIF":6.7,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142571372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Harnessing ambient sound: Different approaches to acoustic energy harvesting using triboelectric nanogenerators","authors":"Fandi Jean ,&nbsp;Muhammad Umair Khan ,&nbsp;Anas Alazzam ,&nbsp;Baker Mohammad","doi":"10.1016/j.jsamd.2024.100805","DOIUrl":"10.1016/j.jsamd.2024.100805","url":null,"abstract":"<div><div>As a sustainable energy source, sound is abundant in the environment, but its effective conversion into electrical energy remains a technical challenge. Triboelectric nanogenerators (TENGs) have made significant progress in addressing this issue, enabling the efficient capture of low-frequency sound waves and their transformation into usable power. This review explores the core principles behind acoustic energy harvesting using TENGs and examines key advancements in materials and resonator designs, including Helmholtz and quarter-wavelength configurations, which enhance energy conversion. Recent breakthroughs in TENG technologies are also highlighted, focusing on specialized mechanisms and innovative structural designs that improve sound wave collection and energy transfer. The review also looks into the various applications of TENGs, including harnessing urban noise, enhancing voice recognition systems, and powering wearable devices. Finally, challenges and future directions for expanding the use of acoustic energy harvesting technologies are discussed,focusing on their potential to provide practical and scalable energy solutions for various applications.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"9 4","pages":"Article 100805"},"PeriodicalIF":6.7,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142554599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pt/ZnO and Pt/few-layer graphene/ZnO Schottky devices with Al ohmic contacts using Atlas simulation and machine learning","authors":"Shonak Bansal ,&nbsp;Abha Kiran Rajpoot ,&nbsp;G. Chamundeswari ,&nbsp;Krishna Prakash ,&nbsp;Parvataneni Rajendra Kumar ,&nbsp;Ahmed Nabih Zaki Rashed ,&nbsp;Mohamed S. Soliman ,&nbsp;Mohammad Tariqul Islam","doi":"10.1016/j.jsamd.2024.100798","DOIUrl":"10.1016/j.jsamd.2024.100798","url":null,"abstract":"<div><div>The search for highly efficient photodetectors, driven by various applications ranging from environmental monitoring to communication systems and imaging, continues to drive research into novel materials and innovative device architectures. This paper offers an in-depth comparative analysis to optimize the performance of two types of Schottky ultraviolet (UV) photodetectors: platinum (Pt)/zinc oxide (ZnO) and Pt/few-layer graphene (FLG)/ZnO, both featuring aluminum (Al) ohmic contacts. The study systematically examines and compares the electrical and optical characteristics of these two photodetector configurations using the Silvaco TCAD simulation tool and machine learning regression models. The research outcomes demonstrate that the proposed photodetector configurations exhibit remarkable improvements, showcasing their substantial potential for superior performance in UV applications. The Pt/ZnO photodetector demonstrates a dark current density of 8.2 × 10⁻¹¹ pA/cm², a photocurrent density of 0.26 μA/cm², a 3-dB cut-off frequency of 85.4 GHz, an external quantum efficiency of 90.41%, and an external photocurrent responsivity of 0.26A/W, at a bias of −1.0 V. On the other hand, Pt/FLG/ZnO photodetector demonstrates near zero dark current density, a photocurrent density of 0.2 μA/cm², a 3-dB cut-off frequency of 2.44 THz, an external quantum efficiency of 68.52%, and an external photocurrent responsivity of 0.2 A/W at a bias of −1.0 V. Furthermore, a comprehensive comparative analysis of various machine-learning regression models is conducted, validating the simulation findings and providing a predictive framework for optimizing the photodetector's performance. Each machine-learning regression model is evaluated by getting root mean squared error and <em>R</em>² values across different test set sizes to assess their accuracy in predicting the photodetector's characteristics. This study underscores the promising role of cutting-edge materials and computational techniques in advancing the development of next-generation optoelectronic devices with enhanced capabilities and performance.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"9 4","pages":"Article 100798"},"PeriodicalIF":6.7,"publicationDate":"2024-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photothermal impacts induced by laser pulse in a 2D semiconducting medium with temperature-dependent properties under strain–temperature rate-dependent theory","authors":"Ismail M. Tayel,&nbsp;Mogtaba Mohammed","doi":"10.1016/j.jsamd.2024.100799","DOIUrl":"10.1016/j.jsamd.2024.100799","url":null,"abstract":"<div><div>The purpose of this research is to introduce a new model for studying the photothermal process in a 2D semiconducting material with temperature-dependent properties using the recently modified Green and Lindsay theory. The surface absorption fashion generated by a laser pulse is used to heat a medium whose surface is subjected to cooling impact and considered traction free. The integral transformation method is used to attain a general solution via Fourier and Laplace transforms, and the inverse Laplace transform is performed numerically using Riemann sum approximation. A silicon element is utilized to get findings that are graphically displayed as an application in which the consistency of outcomes may be deduced.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"9 4","pages":"Article 100799"},"PeriodicalIF":6.7,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative analysis of microlens array formation in fused silica glass by laser: Femtosecond versus picosecond pulses","authors":"Laimis Zubauskas,&nbsp;Edgaras Markauskas,&nbsp;Arnas Vyšniauskas,&nbsp;Valdemar Stankevič,&nbsp;Paulius Gečys","doi":"10.1016/j.jsamd.2024.100804","DOIUrl":"10.1016/j.jsamd.2024.100804","url":null,"abstract":"<div><div>The growing demand for flexible, high-quality fabrication of free-form micro-optics drives the development of laser-based fabrication techniques for both the shape formation and surface polishing of optical elements. In this paper, we performed a thorough and systematic study on fused silica glass ablation using 10 ps and 320 fs duration pulses. Ablation processes for both pulse durations were optimized based on the measurements of the removed material layer thickness and surface roughness, and by analyzing the topographies of ablated cavities to remove material layers as thin as possible with minimum surface damage. Our findings demonstrate higher process resolution and surface quality for femtosecond pulses. Ablation of pre-roughened glass reduced the minimal removable glass layer thickness well below the 1 μm mark for both pulse durations, improving the process resolution. The minimal removable glass layer thickness was 14 times smaller for the femtosecond pulses, with up to 4.5 times lower surface roughness compared to samples processed with picosecond pulses. On the other hand, results revealed faster glass removal rates with picosecond pulses. In the end, arrays of microlenses were fabricated with both pulse durations and subsequently polished with a CO₂ laser. Results revealed higher performance of microlenses fabricated with femtosecond pulses, providing better focusing capabilities and lesser beam scattering. Finally, this study demonstrated the successful fabrication of free-form optical elements with femtosecond and picosecond pulses, demonstrating the versatility and the potential of laser-based techniques.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"9 4","pages":"Article 100804"},"PeriodicalIF":6.7,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications","authors":"B. Mounika ,&nbsp;J. Ajayan ,&nbsp;Sandip Bhattacharya ,&nbsp;D. Nirmal ,&nbsp;Amit Krishna Dwivedi","doi":"10.1016/j.jsamd.2024.100795","DOIUrl":"10.1016/j.jsamd.2024.100795","url":null,"abstract":"<div><div>High-performance L_G = 50 nm graded double-channel (GDC)-HEMT featuring AlN top barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated. Two quantum wells are formed in the AlN-GaN-graded AlGaN-GaN multilayer structure developed on a SiC substrate and the clear double hump feature of the transconductance (G_M), cut-off frequency (f_T), and capacitance plots clearly illustrates the double-channel (DC) behavior. The investigations carried out to explore the impact of barrier thickness (both AlN &amp; graded-AlGaN) revealed superior performance with the G_M showing two peaks at 181.5 &amp; 488.1 mS/mm, the peak-drive-current (I_{D_peak}) with V_GS biased at 3 V is 1.81 A/mm, maximum saturation drain current of 3.08 A/mm (V_GS = 3V), and the f_T derived from the left- and right-hump are 263.7 GHz &amp; 354.2 GHz, respectively, when both barriers are 6 nm thin, attributable to enhanced 2DEG density due to the coordination of channels because of proximity and lower leakage. It has been noticed that when the bottom barrier is thick, the DC behaviour is less obvious due to insufficient gate access to the lower channel. We investigated the impact of varying the Al % in AlGaN top barrier on the DC/RF performance of GDC-HEMTs, demonstrating enhanced performance with increased Al content, particularly for Al_0.35Ga_0.65N. By using various metals, this study also investigates how gate engineering affects the electrical characteristics of the GDC-HEMT. The lower ϕ_m (work function) of the Al-gate led to better DC/RF performance. When the Schottky barrier rises as a result of the conduction band edge being elevated, the performance reduces, and the threshold voltage (V_th) increases. Since it is essential to comprehend the role that source resistance (R_s) &amp; drain resistance (R_d) play in RF design, we have also conducted simulations by varying the source-gate gap (L_GS) &amp; drain-gate gap (L_GD). Due to low R_s &amp; R_d, it was determined that the GDC-HEMT performed better at the smallest L_GS &amp; L_GD. The extraordinary performance strongly highlights the immense potential and applicability of the GDC-HEMTs for future broadband power amplifiers.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"9 4","pages":"Article 100795"},"PeriodicalIF":6.7,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A study on the manufacture of CNT composites bipolar plate for the fuel cell using a nanosecond pulsed laser","authors":"Seungeun Baek ,&nbsp;Dongkyoung Lee","doi":"10.1016/j.jsamd.2024.100803","DOIUrl":"10.1016/j.jsamd.2024.100803","url":null,"abstract":"<div><div>The channels of the graphite-based bipolar plate for hydrogen fuel cells were mainly manufactured through milling due to low forming elongation and processability. However, during the milling process, the machining precision is low due to tool wear and vibration, and there is a risk of breakage. Non-traditional laser processing can solve the problems of tool wear and vibration through non-contact processing. In this study, the interaction characteristics of the nanosecond pulsed laser and CNT composites were observed, and channels and bipolar plates were manufactured. The effect of scanning speed and pulse duration was observed for interaction characteristics. Defects were observed due to high thermal effects at low scanning speed and high pulse duration. Channels were created depending on parallel pitch distance [<span><math><mrow><mo>Δ</mo><mi>S</mi></mrow></math></span>] and Number of Scans (NOS). The channel was evaluated for depth, top width, bottom width, channel angle, material removal rate, and surface roughness, and significant changes were observed depending on <span><math><mrow><mo>Δ</mo><mi>S</mi></mrow></math></span>. The chemical composition, surface resistance, and contact angle of the laser-processed channel were measured. The laser processed channel was oxidized, and the surface resistance and contact angle increased. Finally, the manufacturability of the CNT composites bipolar plate using laser was examined.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"9 4","pages":"Article 100803"},"PeriodicalIF":6.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unveiling the potential of decorating tunable morphology of bismuth sulfide nanostructures on the Bi2WO6 nanosheets for enhanced photoelectrochemical performance","authors":"Yuan-Chang Liang,&nbsp;Chun-Hsi Yang","doi":"10.1016/j.jsamd.2024.100800","DOIUrl":"10.1016/j.jsamd.2024.100800","url":null,"abstract":"<div><div>In this study, we used different sulfur sources (thiourea and sodium sulfide) in the hydrothermal vulcanization to create two types of Bi₂S₃/Bi₂WO₆ composite materials with different structures. We varied the vulcanization duration to control the degree of vulcanization of the samples. The composites made with sodium sulfide displayed a mix of particles and nanosheets, while those made with thiourea showed nanowires and nanosheets. The choice of sulfur source had a significant impact on the structural characteristics of the composite material. In photoelectrochemical experiments (PEC), the vulcanization-treated Bi₂S₃/Bi₂WO₆ composites improved significantly compared to the pristine Bi₂WO₆ template. In particular, the Bi₂S₃/Bi₂WO₆ composite prepared using sodium sulfide precursor for 4 h exhibited the best photocurrent density and the lowest charge transfer interface resistance. The improved performance is attributed to the suitable defect density and a Z-scheme mechanism facilitated by the built-in electric field at the interface, which effectively separated photogenerated carriers, increasing active species and significantly improving the composites' efficiency in PEC reactions.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"9 4","pages":"Article 100800"},"PeriodicalIF":6.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}