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Measurement and Characterization of Unstable Pixels of Long-wavelength HgCdTe Infrared Focal Plane Array 长波HgCdTe红外焦平面阵列不稳定像元的测量与表征
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-04-30 DOI: 10.5573/jsts.2022.22.2.93
Yu Zhang, Songmin Zhou, Xun Li, Xi Wang, Liqi Zhu, Chun Lin
{"title":"Measurement and Characterization of Unstable Pixels of Long-wavelength HgCdTe Infrared Focal Plane Array","authors":"Yu Zhang, Songmin Zhou, Xun Li, Xi Wang, Liqi Zhu, Chun Lin","doi":"10.5573/jsts.2022.22.2.93","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.2.93","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82534438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sensitive Vector Search for Logic Circuit Failure Probability based on Improved Adaptive Cuckoo Algorithm 基于改进自适应布谷鸟算法的逻辑电路故障概率敏感向量搜索
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-04-30 DOI: 10.5573/jsts.2022.22.2.69
Shuo Cai, Sicheng Wu, Weizheng Wang, Fei Yu, Lairong Yin
{"title":"Sensitive Vector Search for Logic Circuit Failure Probability based on Improved Adaptive Cuckoo Algorithm","authors":"Shuo Cai, Sicheng Wu, Weizheng Wang, Fei Yu, Lairong Yin","doi":"10.5573/jsts.2022.22.2.69","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.2.69","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76603432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of a Vertical Cavity Surface Emitting Laser Excited by a Rectangular Pulse 矩形脉冲激励下垂直腔面发射激光器的分析
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-02-28 DOI: 10.5573/jsts.2022.22.1.17
S. Eladl, A. Nasr, A. Sharaf
{"title":"Analysis of a Vertical Cavity Surface Emitting Laser Excited by a Rectangular Pulse","authors":"S. Eladl, A. Nasr, A. Sharaf","doi":"10.5573/jsts.2022.22.1.17","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.1.17","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78775334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-insensitive Pseudo-resistor Temperature-insensitive Pseudo-resistor
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-02-28 DOI: 10.5573/jsts.2022.22.1.47
Jong-Pal Kim
{"title":"Temperature-insensitive Pseudo-resistor","authors":"Jong-Pal Kim","doi":"10.5573/jsts.2022.22.1.47","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.1.47","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82519279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor 非晶氧化物薄膜晶体管中偏置与光应力引起的肖特基接触诱发驼峰现象
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-02-28 DOI: 10.5573/jsts.2022.22.1.24
Hyunwoo Kim, Jang-Hyun Kim, D. Kwon
{"title":"Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor","authors":"Hyunwoo Kim, Jang-Hyun Kim, D. Kwon","doi":"10.5573/jsts.2022.22.1.24","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.1.24","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89185972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Switching and Heat-dissipation Performance Analysis of an LTCC-based Leadless Surface Mount Package 基于ltcc的无铅表面贴装封装的开关和散热性能分析
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-02-28 DOI: 10.5573/jsts.2022.22.1.1
D. Jung, H. Jang, J. Won, Doohyung Cho, Sungkyu Kwon, Seong-Hyun Lee, Kunsik Park, Jong-Won Lim, Y. Lee
{"title":"Switching and Heat-dissipation Performance Analysis of an LTCC-based Leadless Surface Mount Package","authors":"D. Jung, H. Jang, J. Won, Doohyung Cho, Sungkyu Kwon, Seong-Hyun Lee, Kunsik Park, Jong-Won Lim, Y. Lee","doi":"10.5573/jsts.2022.22.1.1","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.1.1","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79131021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 39.8% Locking Range Injection-locked Quadrature Voltage-controlled Oscillator using Fourth-order Resonator 一种锁程39.8%的四阶谐振腔注入锁定正交压控振荡器
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-02-28 DOI: 10.5573/jsts.2022.22.1.10
Kwang-Il Oh, Donghyun Baek
{"title":"A 39.8% Locking Range Injection-locked Quadrature Voltage-controlled Oscillator using Fourth-order Resonator","authors":"Kwang-Il Oh, Donghyun Baek","doi":"10.5573/jsts.2022.22.1.10","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.1.10","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88152864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Volatile and Nonvolatile Memory Devices for Neuromorphic and Processing-in-memory Applications 用于神经形态和内存处理应用的易失性和非易失性存储器器件
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-02-28 DOI: 10.5573/jsts.2022.22.1.30
Seong-Taek Cho
{"title":"Volatile and Nonvolatile Memory Devices for Neuromorphic and Processing-in-memory Applications","authors":"Seong-Taek Cho","doi":"10.5573/jsts.2022.22.1.30","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.1.30","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83552335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure 圆柱形和六边形氮化镓基垂直沟槽mosfet的电学性能
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2021-12-31 DOI: 10.5573/jsts.2021.21.6.398
G. Kim, Y. Yoon, J. Seo, M. Cho, Sang-Ho Lee, Jin Park, H. An, S. Min, I. Kang
{"title":"Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure","authors":"G. Kim, Y. Yoon, J. Seo, M. Cho, Sang-Ho Lee, Jin Park, H. An, S. Min, I. Kang","doi":"10.5573/jsts.2021.21.6.398","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.398","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82693485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM 工作函数变化对栅极全能JLFET无电容DRAM传输特性和存储性能的影响
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2021-12-31 DOI: 10.5573/jsts.2021.21.6.381
Sang-Ho Lee, Y. Yoon, J. Seo, M. Cho, Jin Park, H. An, S. Min, G. Kim, I. Kang
{"title":"Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM","authors":"Sang-Ho Lee, Y. Yoon, J. Seo, M. Cho, Jin Park, H. An, S. Min, G. Kim, I. Kang","doi":"10.5573/jsts.2021.21.6.381","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.381","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89636138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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