2019 International Conference on High Voltage Engineering and Technology (ICHVET)最新文献

Configuring Voltage Impulse Generator Using Simplex Search Algorithm 使用单纯形搜索算法配置电压脉冲发生器

2019 International Conference on High Voltage Engineering and Technology (ICHVET) Pub Date : 2019-02-01 DOI: 10.1109/ICHVET.2019.8724185

Prabhak K Sonu, G. S. Punekar

引用次数: 1

A Study on RTV Coating: Ageing and Reduction of Coating Length on Insulator RTV涂层的研究:绝缘子涂层老化与缩短涂层长度

2019 International Conference on High Voltage Engineering and Technology (ICHVET) Pub Date : 2019-02-01 DOI: 10.1109/ICHVET.2019.8724232

H. Rajini, K. Ravi, N. Vasudev

引用次数: 0

Mitigation of Ferroresonance in Capacitive Voltage Transformer Using Memelements 电容式电压互感器中的微元件抑制铁磁谐振

2019 International Conference on High Voltage Engineering and Technology (ICHVET) Pub Date : 2019-02-01 DOI: 10.1109/ICHVET.2019.8724375

V. Mohan, S. Poornima, C. Sugumaran

{"title":"Mitigation of Ferroresonance in Capacitive Voltage Transformer Using Memelements","authors":"V. Mohan, S. Poornima, C. Sugumaran","doi":"10.1109/ICHVET.2019.8724375","DOIUrl":"https://doi.org/10.1109/ICHVET.2019.8724375","url":null,"abstract":"Ferroresonance in power system is still an unpredictable phenomenon. Capacitor Voltage Transformer (CVT) provides signals for measurement and protective devices. Protective relays are affected by the transient response of CVT due to ferroresonance. Various ferroresonance suppression circuits (FSC) such as active, passive and electronic type filters have been proposed for CVT. This work presents a memristor and meminductor for mitigation of the ferroresonance phenomenon in CVT. A model of CVT rated at 3.3 kV/110 V is designed and the ferroresonance is created as per standard IEC 61869–5. A low pressure gas discharge lamp is used to design as a memristor emulator. By using a mutuator circuit, the meminductor emulator is derived from the developed memristor emulator. The ideal characteristics of the memristor and meminductor are verified with the designed emulators. During the inception of ferroresonance, the modelled memristor and meminductor are connected individually across the secondary to mitigate the ferroresonance. The performance of the mitigating circuits are compared with that of the conventional technique and the results of the harmonic analysis are used to select a suitable FSC for a CVT.","PeriodicalId":165193,"journal":{"name":"2019 International Conference on High Voltage Engineering and Technology (ICHVET)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126242313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Quality Analysis of Ceramic Insulators Under Electro Thermal Stresses 电热应力作用下陶瓷绝缘子的质量分析

2019 International Conference on High Voltage Engineering and Technology (ICHVET) Pub Date : 2019-02-01 DOI: 10.1109/ICHVET.2019.8724303

K. Marimuthu, S. Vynatheya, N. Vasudev, P. Raja

{"title":"Quality Analysis of Ceramic Insulators Under Electro Thermal Stresses","authors":"K. Marimuthu, S. Vynatheya, N. Vasudev, P. Raja","doi":"10.1109/ICHVET.2019.8724303","DOIUrl":"https://doi.org/10.1109/ICHVET.2019.8724303","url":null,"abstract":"The insulators used in power transmission and distribution networks are expected to withstand continuous electrical, mechanical and thermal stresses under different environmental factors. These stresses may reduce their performances such as surface resistance, flash over voltage and puncture strength. This reduction in characteristics may cause large leakage current to flow on the insulator which leads to degradation of the insulator. The AC insulators leakage current behaviour was studied under various temperature and applied voltage. The general procedure specified in IEC 61325/1995-03 for accelerated ageing tests under electro thermal stresses such as Electrical body resistance (EBR) measurement and thermal runaway (TRA) test were followed for quality evaluation. In the present work, new cap-and-pin type AC insulators from four different manufacturers were used for the study. Two samples from one manufacturer and three samples from another manufacturer were failed in EBR & TRA tests. After the tests, the failed insulator's defective and good region samples were subjected to Scanning Electron Microscopy, Energy Dispersive Spectroscopy and X-Ray Diffractometry tests. It is observed that the presence of more voids and mullite content reduces the dielectric strength of the ceramic insulator and results in puncture. Hence, it is concluded that the EBR & TRA tests may be useful to identify the poor-quality insulators.","PeriodicalId":165193,"journal":{"name":"2019 International Conference on High Voltage Engineering and Technology (ICHVET)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125983884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A New Criterion for Optimal Dielectric Design of High Voltage Bushing Internal Shields in Large Power Transformer 大型电力变压器高压套管内屏蔽介质优化设计新准则

2019 International Conference on High Voltage Engineering and Technology (ICHVET) Pub Date : 2019-02-01 DOI: 10.1109/ICHVET.2019.8724267

Pradeep Adusumilli, Jithin Sundar S V N

{"title":"A New Criterion for Optimal Dielectric Design of High Voltage Bushing Internal Shields in Large Power Transformer","authors":"Pradeep Adusumilli, Jithin Sundar S V N","doi":"10.1109/ICHVET.2019.8724267","DOIUrl":"https://doi.org/10.1109/ICHVET.2019.8724267","url":null,"abstract":"The high voltage (HV) bushings are the most sensitive components of power transformers, they provide electrical insulation between the HV line and grounded tank, and also provide necessary mechanical support. The majority of transformer breakdowns are attributed to the HV bushings failures which are graded with conductive layers to improve their dielectric strength. The design of bushings is quite challenging with tradeoff between the axial and radial electric stresses. The bushing design is also governed by its mounting angle and transformer tank configuration to meet the internal and external flashover clearances and creepage requirements. At higher voltage levels, the configuration of HV bushing shield and grounded structural components have significant impact on dielectric withstand strength other than the clearances. Hence, it is very important to study the electrode configuration inside transformer tank for a particular bushing mounting arrangement before finalizing the bushing internal shield design. The 3D electrostatic field analysis of high voltage generator transformer was carried out for different bushing shield configurations to evaluate the electric stress distribution and the dielectric breakdown strength of the equipment was verified experimentally. The authors recommend to study the dielectric design of transformer in tandem with transformer configuration and a new evaluation criterion for optimal design of bushing internal shield is proposed.","PeriodicalId":165193,"journal":{"name":"2019 International Conference on High Voltage Engineering and Technology (ICHVET)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124365030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Ultra-High Frequency (UHF) Based Partial Discharge Measurement in Gas Insulated Switchgear (GIS) 基于超高频(UHF)的气体绝缘开关柜局部放电测量

2019 International Conference on High Voltage Engineering and Technology (ICHVET) Pub Date : 2019-02-01 DOI: 10.1109/ICHVET.2019.8724361

M. M. Rao, Mrituniav Kumar

{"title":"Ultra-High Frequency (UHF) Based Partial Discharge Measurement in Gas Insulated Switchgear (GIS)","authors":"M. M. Rao, Mrituniav Kumar","doi":"10.1109/ICHVET.2019.8724361","DOIUrl":"https://doi.org/10.1109/ICHVET.2019.8724361","url":null,"abstract":"Gas Insulated Substations (GIS) offer significant advantages over conventional Air Insulated Substations (AIS) on account of reduced space and operational efficiency. Partial discharge (PD) measurement is one of the important test in GIS to ensure its reliability during service and also to reveal defects at incipient levels. One of the methods employed for partial discharge (PD) measurement is by capturing the Ultra high frequency (UHF) signals that emanate from the partial discharge sites. The present paper discusses the measurement of partial discharges and also localization of PD source in a gas insulated bus duct assembly of EHV (Extra high voltage) class, using UHF PD detector. The corresponding PD magnitude obtained through conventional electrical method has also been reported. The study has been aimed to monitor PD during service (on-line) using the UHF method so that defects can be detected at premature levels. Necessary set-up for measurement is also discussed in the paper. This process of evaluation helps utility to make appropriate plans for maintenance schedules and ensure reliable operation of GIS.","PeriodicalId":165193,"journal":{"name":"2019 International Conference on High Voltage Engineering and Technology (ICHVET)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116893419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Ferroresonance Mitigation in an Inductive Voltage Transformer Using Memristor Emulator 用忆阻器仿真器抑制电感电压互感器中的铁谐振

2019 International Conference on High Voltage Engineering and Technology (ICHVET) Pub Date : 2019-02-01 DOI: 10.1109/ICHVET.2019.8724287

S. Poornima, L. Sathyanandan, C. P. Sugumaran

{"title":"Ferroresonance Mitigation in an Inductive Voltage Transformer Using Memristor Emulator","authors":"S. Poornima, L. Sathyanandan, C. P. Sugumaran","doi":"10.1109/ICHVET.2019.8724287","DOIUrl":"https://doi.org/10.1109/ICHVET.2019.8724287","url":null,"abstract":"The development of advanced digital technologies often struggle in their promising performances. The failure report of a substation includes the performance of instrument transformers definitely. The overvoltages and overcurrents developed during transients especially ferroresonance, marked the degrading performance of a voltage transformer though it has a suppression circuit. Memristors are nonlinear resistors capable of remembering their previous resistance, which might help to replace the system resistors in many applications. In this paper, this hopeful technology of the future has been attempted to mitigate the ferroresonance phenomenon of inductive voltage transformers. A single phase 100 VA, (11kV/✓3)/ (110V/✓3) Inductive Voltage Transformer (IVT) was used to analyze the ferroresonance performance. The jump up and down phenomenon observed was the indicator of the ferroresonance inception. An overvoltage of 1.34 pu was developed and suppressed using a memristor emulator successfully. The mitigation results of the memristor emulator proved its better performance when compared with that of a linear resistor.","PeriodicalId":165193,"journal":{"name":"2019 International Conference on High Voltage Engineering and Technology (ICHVET)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123995475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Experimental Study on Aging of Polymeric Insulators by Dip Method 聚合物绝缘子浸渍老化试验研究

2019 International Conference on High Voltage Engineering and Technology (ICHVET) Pub Date : 2019-02-01 DOI: 10.1109/ICHVET.2019.8724262

Ashwini A V, Ravi K N, V. N

引用次数: 4

Development of Epoxy with Nano and Micro Fillers for Core Insulation of Composite Insulators 复合绝缘子芯绝缘用纳米和微填料环氧树脂的研制

2019 International Conference on High Voltage Engineering and Technology (ICHVET) Pub Date : 2019-02-01 DOI: 10.1109/ICHVET.2019.8724139

Santhy P. Kuruvilla, N. Renukappa, J. S. Rajan

引用次数: 4

Emerging Technologies in High Voltage Gas Insulated Switchgear-Clean Air GIS and NCIT 高压气体绝缘开关设备的新兴技术——洁净空气GIS和NCIT

2019 International Conference on High Voltage Engineering and Technology (ICHVET) Pub Date : 2019-02-01 DOI: 10.1109/ICHVET.2019.8724126

Dharababu Thummapal, S. Kothari, M. Thirumalai

{"title":"Emerging Technologies in High Voltage Gas Insulated Switchgear-Clean Air GIS and NCIT","authors":"Dharababu Thummapal, S. Kothari, M. Thirumalai","doi":"10.1109/ICHVET.2019.8724126","DOIUrl":"https://doi.org/10.1109/ICHVET.2019.8724126","url":null,"abstract":"Presently, the Gas insulated switchgears (GIS) are used extensively in the power transmission and distribution systems worldwide. The compactness and durability of Gas insulated switchgear is the key reason for their popularity. The compactness is mainly because of presence of SF6 gas, having the best characteristics as an insulating and quenching medium. SF6 gas, though provides a good insulation resistance, it is also considered harmful to the environment because of its greenhouse effect. Though it is not a major contributor to global warming, it has got long term footprints on the environment. Thus, it has become a necessity to have a solution which protects environment and provides resource efficiency without comprising the operational benefits. Clean air & vacuum technologies in high voltage switchgears have been developed in recent times as an alternative to the existing SF6 technology. This provides a completely environmental friendly solution. Secondly, there is a recent trend of digitalization globally. Power systems and substations are assimilating this technology rapidly. Taking into consideration the above requirement Non Conventional Instrument Transformer (NCIT) emerges as a promising & potential solution. The new proposed NCIT provides an advantage over the conventional instrument transformer as it has less copper cabling and thus a door opener to digital substations having better measurement functionality for metering and protection. Special electronic units for preprocessing and merging of sample values are introduced to convert the outputs (low power or optical) to the compiled standard IEC 61850-9-2-LE.","PeriodicalId":165193,"journal":{"name":"2019 International Conference on High Voltage Engineering and Technology (ICHVET)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128059556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5