Ferroresonance Mitigation in an Inductive Voltage Transformer Using Memristor Emulator

S. Poornima, L. Sathyanandan, C. P. Sugumaran
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引用次数: 2

Abstract

The development of advanced digital technologies often struggle in their promising performances. The failure report of a substation includes the performance of instrument transformers definitely. The overvoltages and overcurrents developed during transients especially ferroresonance, marked the degrading performance of a voltage transformer though it has a suppression circuit. Memristors are nonlinear resistors capable of remembering their previous resistance, which might help to replace the system resistors in many applications. In this paper, this hopeful technology of the future has been attempted to mitigate the ferroresonance phenomenon of inductive voltage transformers. A single phase 100 VA, (11kV/✓3)/ (110V/✓3) Inductive Voltage Transformer (IVT) was used to analyze the ferroresonance performance. The jump up and down phenomenon observed was the indicator of the ferroresonance inception. An overvoltage of 1.34 pu was developed and suppressed using a memristor emulator successfully. The mitigation results of the memristor emulator proved its better performance when compared with that of a linear resistor.
用忆阻器仿真器抑制电感电压互感器中的铁谐振
先进数字技术的发展往往在其前景中挣扎。变电站的故障报告明确地包含了仪表变压器的性能。电压互感器虽有抑制电路,但在瞬态特别是铁磁谐振过程中产生的过电压和过电流是其性能下降的标志。忆阻器是一种非线性电阻,能够记住其先前的电阻,这可能有助于在许多应用中取代系统电阻。在本文中,这一有希望的未来技术已被尝试减轻铁磁谐振现象的电感电压互感器。采用单相100 VA、(11kV/✓3)/ (110V/✓3)电感式电压互感器(IVT)分析铁磁谐振性能。观察到的上下跳变现象是铁共振起始的指示。利用忆阻器仿真器成功地抑制了1.34 pu的过电压。仿真结果表明,与线性电阻相比,忆阻器具有更好的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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