Journal of Nanophotonics最新文献_第3页

Selectively sorting spin-dependent photons by Y-type plasmonic nanocircuits 利用 Y 型等离子纳米电路选择性分拣自旋光子

IF 1.5 4区物理与天体物理

Journal of Nanophotonics Pub Date : 2024-02-01 DOI: 10.1117/1.jnp.18.016003

Chengkai Jiang, Xiaoman Luo, Yongqi Zhao, Jinhua Li, Youqiao Ma

引用次数: 0

Enhancing detectivity in mid-infrared photodetectors through structural parameter engineering in HgSe-HgTe colloidal quantum dots 通过 HgSe-HgTe 胶体量子点的结构参数工程提高中红外光探测器的探测能力

IF 1.5 4区物理与天体物理

Journal of Nanophotonics Pub Date : 2024-02-01 DOI: 10.1117/1.jnp.18.016002

Mehdi Khodaverdizadeh, Asghar Asgari

{"title":"Enhancing detectivity in mid-infrared photodetectors through structural parameter engineering in HgSe-HgTe colloidal quantum dots","authors":"Mehdi Khodaverdizadeh, Asghar Asgari","doi":"10.1117/1.jnp.18.016002","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016002","url":null,"abstract":"The escalating demand for cost-effective, flexible, and solution-processed materials in infrared (IR) photodetection presents a compelling alternative to current epitaxially grown optoelectronic technology. Colloidal quantum dots (CQDs) have emerged as a versatile platform for optoelectronic device fabrication, offering affordability, low-temperature synthesis, and scalability. Specifically, mercury chalcogenide CQDs exhibit notable intraband absorption in the mid-IR region. In this study, we explore an intraband HgSe-HgTe CQD photodetector structure tailored for mid-IR light detection. Through numerical optimization, we engineer detectivity by varying key design parameters—the film doping density, CQD diameter, and number of periods in the active layer—under different temperatures and biases. Results indicate that, at 60 K and 1 V bias, our optimally designed HgSe-HgTe CQD IR photodetector attains a peak detectivity of 8.14×1010 Jones for a film doping density of 1019 cm−3 of HgSe CQDs, 9.34×1010 Jones for HgSe CQDs with a 4.8 nm diameter, and 8.72×1010 Jones for 9 periods of HgSe-HgTe CQDs.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"180 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139657383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ge2Sb2Te5 patch embedded ring resonator for optical switching 用于光开关的 Ge2Sb2Te5 贴片嵌入式环形谐振器

IF 1.5 4区物理与天体物理

Journal of Nanophotonics Pub Date : 2024-02-01 DOI: 10.1117/1.jnp.18.016008

Anoopshi Johari, Sanjeev Naithani, Baljinder Kaur, Abhinav Bhatnagar, Brajesh Kumar Kaushik

{"title":"Ge2Sb2Te5 patch embedded ring resonator for optical switching","authors":"Anoopshi Johari, Sanjeev Naithani, Baljinder Kaur, Abhinav Bhatnagar, Brajesh Kumar Kaushik","doi":"10.1117/1.jnp.18.016008","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016008","url":null,"abstract":"A Ge2Sb2Te5 (GST)-based microring resonator is designed and analyzed for optical switching-based applications. First, the optical properties of GST material having thicknesses of 130 to 230 nm on two commonly used substrates, i.e., silicon (Si) and silicon dioxide (SiO2), are investigated in detail. The phase-change property of GST plays an important role in tuning the resonant wavelength, absorption, and transmission loss in the ring resonator as its crystalline state has a higher refractive index (RI) compared with the amorphous state. Due to the phase-change property of the GST material, the effective RI of the waveguide core changes. A patch of GST is embedded on a ring resonator to optimize the response of light coupled in the ring and straight waveguide, that is tunable between its amorphous phase (a-GST) and crystalline (c-GST) phase. The difference in refractive indices between the two states of a phase-change material (PCM) renders it an optimal choice for the optical active devices used in light modulation and switching applications. The GST is employed as an active material in the proposed structure as it is significantly stable and results in reduced insertion loss (IL) compared with other PCMs. In the proposed design of the ring resonator, the finite-difference time-domain simulation demonstrates high extinction ratios of 16.05 and 20.50 dB at the THROUGH and DROP ports, respectively. Moreover, the low insertion losses (IL) of 0.33 dB at the THROUGH port in crystalline phase and 0.8 dB at the DROP port in amorphous phase, have been observed. The Q-factor of the ring resonator without a GST patch is 5.18×105, whereas with a GST patch, it is 5.13×105 and 1.28×105 in the amorphous and crystalline phases, respectively.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"10 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140007764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent progress on inverse design for integrated photonic devices: methodology and applications 集成光子设备逆向设计的最新进展：方法与应用

IF 1.5 4区物理与天体物理

Journal of Nanophotonics Pub Date : 2024-01-01 DOI: 10.1117/1.jnp.18.010901

Ruoyu Shen, Bingzhou Hong, Xiuyan Ren, Fenghe Yang, Wei Chu, Haiwen Cai, Weiping Huang

{"title":"Recent progress on inverse design for integrated photonic devices: methodology and applications","authors":"Ruoyu Shen, Bingzhou Hong, Xiuyan Ren, Fenghe Yang, Wei Chu, Haiwen Cai, Weiping Huang","doi":"10.1117/1.jnp.18.010901","DOIUrl":"https://doi.org/10.1117/1.jnp.18.010901","url":null,"abstract":"Photonic integrated circuits (PICs) have attracted great attention as promising platforms for high-data-rate communications and high-performance computing. For the PICs, photonic devices with compatible materials, compact footprint, high-performance, and sophisticated functionalities are necessary building blocks. Design optimization to implement such devices for target applications and requirements are of critical importance. In this respect, inverse design methods, including iterative optimizations and deep neural networks, have demonstrated significant advantages over the traditional simulation-based trial-and-error optimization approach. We provide an overview of the recent progress on the inverse designs for the integrated photonic devices. The principles and procedure of the inverse design methods are presented and discussed, followed by a summary of the methods employed for specific integrated photonic devices in different integrated photonics material platforms. Finally, topics of future applications and fabrication constraints for the inverse design methods are discussed.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"2 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and optimization of Bloch surface wave sensor with high sensitivity and quality factor using LiNbO3 利用氧化铌锂设计和优化具有高灵敏度和品质因数的布洛赫表面波传感器

IF 1.5 4区物理与天体物理

Journal of Nanophotonics Pub Date : 2024-01-01 DOI: 10.1117/1.jnp.18.016001

Yuanshi Wei, Jiakang Shi, Zhen Liu, Daohan Ge, Liqiang Zhang

引用次数: 0

2023 List of Reviewers 2023 年审查员名单

IF 1.5 4区物理与天体物理

Journal of Nanophotonics Pub Date : 2024-01-01 DOI: 10.1117/1.jnp.18.010102

引用次数: 0

Polarization detection of ultraviolet light using ZnO microwires 利用氧化锌微丝对紫外线进行偏振检测

IF 1.5 4区物理与天体物理

Journal of Nanophotonics Pub Date : 2023-12-22 DOI: 10.1117/1.jnp.17.046003

Ziheng Wang, Xueying Chu, Jinhua Li, Dengkui Wang

引用次数: 0

All optical third order tunable ordinary differential equation solutions based on double Sagnac rings coupled MZI on silicon waveguide chips 基于硅波导芯片上双萨格纳克环耦合 MZI 的全光三阶可调常微分方程解决方案

IF 1.5 4区物理与天体物理

Journal of Nanophotonics Pub Date : 2023-12-01 DOI: 10.1117/1.jnp.17.046004

Ming Xu, Longqi He, Bo Yang, Yiting Wei, Jianhua Ji, Maoguo Cai

{"title":"All optical third order tunable ordinary differential equation solutions based on double Sagnac rings coupled MZI on silicon waveguide chips","authors":"Ming Xu, Longqi He, Bo Yang, Yiting Wei, Jianhua Ji, Maoguo Cai","doi":"10.1117/1.jnp.17.046004","DOIUrl":"https://doi.org/10.1117/1.jnp.17.046004","url":null,"abstract":"At present, an all optical high-order tunable ordinary differential equation (ODE) solver is very difficult to implement. A novel all-optical first to third order linear ODEs solutions with tunable constant coefficients using double Sagnac rings coupled Mach–Zehnder-interferometer (DSMZI) on silicon waveguide chips are proposed. The structural composition and size of the DSMZI have been designed, and the working principles of its first to third order ODEs solutions have been derived. By varying the input electric heating power of the thermal-optical phase shifters of the individual arms of the MZI, the constant-coefficient of the differential equation can be simply tuned in large scope. It is demonstrated that the constant coefficient k ranges from 0.0015/ps to 0.092/ps for the first-order ODE. The constant coefficient p of the second-order ODE solver can be continuously tuned from 0.013/ps to 0.174/ps, correspondingly with the q varying from 0.00004225/ps2 to 0.007569/ps2. Three constant coefficients u, v, and w of the third-order ODE can be continuously tuned from 0.105/ps to 0.252/ps, 0.003675/ps2 to 0.021168/ps2, and 0.00004288/ps3 to 0.0005927/ps3, respectively. The all-optical ODE solvers with the DSMZI can be easily integrated with other optical components based on silicon on insulator, which can provide a path for future artificial intelligence or big data processing systems in optical computing on silicon waveguide chips.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"77 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139055038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Athermal waveguides and resonators with three zero-thermal-drift wavelengths 具有三个零热漂移波长的热波导和谐振器

IF 1.5 4区物理与天体物理

Journal of Nanophotonics Pub Date : 2023-12-01 DOI: 10.1117/1.jnp.17.046005

Peishan Han, Liuqing He, Lijuan Xu, Lin Zhang

引用次数: 0

Multiple nonreciprocal transmission based on defect modes of photonic crystals 基于光子晶体缺陷模的多重非互易传输

4区物理与天体物理

Journal of Nanophotonics Pub Date : 2023-11-07 DOI: 10.1117/1.jnp.17.046002

Yu Shen, Xiaomeng Zhang, Guanxia Yu, Xin Chen, Haodong Wang, Guangyao Yuan

引用次数: 0